NCV7321 Stand-alone LIN Transceiver Description The NCV7321 is a fully featured local interconnect network (LIN) transceiver designed to interface between a LIN protocol controller and the physical bus. The transceiver is implemented in I3T technology enabling both high-voltage analog circuitry and digital functionality to co-exist on the same chip. The NCV7321 LIN device is a member of the in-vehicle networking (IVN) transceiver family. The LIN bus is designed to communicate low rate data from control devices such as door locks, mirrors, car seats, and sunroofs at the lowest possible cost. The bus is designed to eliminate as much wiring as possible and is implemented using a single wire in each node. Each node has a slave MCU-state machine that recognizes and translates the instructions specific to that function. The main attraction of the LIN bus is that all the functions are not time critical and usually relate to passenger comfort. Features * * LIN Compliant to Specification Revision 2.x (Backwards Compatible to Version 1.3) and J2602 Bus Voltage $45 V Transmission Rate 1 kbps to 20 kbps Supports K-Line Bus Architecture Protection Thermal Shutdown Indefinite Short-Circuit Protection on Pins LIN and WAKE Towards Supply and Ground Load Dump Protection (45 V) Bus Pins Protected Against Transients in an Automotive Environment EMI Compatibility Integrated Slope Control Modes Normal Mode: LIN Transceiver Enabled, Communication via the LIN Bus is Possible, INH Switch is On Sleep Mode: LIN Transceiver Disabled, the Consumption from VBB is Minimized, INH Switch is Off Standby Mode: Transition Mode reached either after Power-up or after a Wake-up Event, INH Switch is on Wake-up Bringing the Component from Sleep Mode into Standby Mode is Possible either by LIN Command or a Digital Signal on WAKE Pin (e.g. External Switch) Quality Unique Site and Control Change Require- ments; AEC-Q100 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant (c) Semiconductor Components Industries, LLC, 2016 August, 2016 - Rev. 14 8 NV7321-x FALYW G SOIC-8 CASE 751 8 1 1 1 NV73 21-y ALYWG G DFN8 CASE 506DG SOIC-8: x = Specific Device Code 0 = NCV7321D10 1 = NCV7321D11 2 = NCV7321D12 DFN8: y = Specific Device Code 2 = NCV7321MW2 F = Fab Location Code = (NCV7321D11R2G only) A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb-Free Package (Note: Microdot may be in either location) PIN CONNECTIONS RxD EN WAKE TxD 1 8 2 7 3 6 4 5 1 INH VBB LIN GND SOIC-8 (Top View) RxD 1 8 INH EN 2 WAKE 3 * NCV Prefix for Automotive and Other Applications Requiring * MARKING DIAGRAMS 1 * LIN-Bus Transceiver * www.onsemi.com TxD 4 EP 7 VBB 6 LIN 5 GND DFN8 (Top View) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. Publication Order Number: NCV7321/D NCV7321 RECOMMENDED OPERATING RANGES AND KEY TECHNICAL CHARACTERISTICS Table 1. RECOMMENDED OPERATING RANGES AND KEY TECHNICAL CHARACTERISTICS Symbol VBB Parameter Min Typ Max Unit 5 12 27 V Nominal Battery Operating Voltage (Note 1) Load Dump Protection 45 IBB_SLP Supply Current in Sleep Mode 20 mA VLIN LIN Bus Voltage -45 45 V VWAKE Operating DC Voltage on WAKE Pin 0 VBB V -35 45 V Maximum Rating Voltage on WAKE Pin VINH Operating DC Voltage on INH Pin 0 VBB V V_Dig_IO Operating DC Voltage on Digital IO Pins (EN, RxD, TxD) 0 5.5 V TJSD Junction Thermal Shutdown Temperature 150 185 C Tamb Operating Ambient Temperature -40 +125 C VESD Electrostatic Discharge Voltage (all pins) Human Body Model (Note 2) -4 +4 kV Version NCV7321D11/D12/MW2; no filter on LIN Electrostatic Discharge Voltage (LIN) System Human Body Model (Note 3) -10 +10 kV Version NCV7321D12/MW2; Voltage transients (DCC method), pin LIN According to SAE J2962-1, Class C (Note 4) -85 +85 V VTRAN 165 Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 1. Below 5 V on VBB in normal mode, the bus will either stay recessive or comply with the voltage level specifications and transition time specifications as required by SAE J2602. It is ensured by the battery monitoring circuit. Above 27 V on VBB, LIN communication is operational (LIN pin toggling) but parameters cannot be guaranteed. For higher battery voltage operation above 27 V, LIN pull-up resistor must be selected large enough to avoid clamping of LIN pin by voltage drop over external pull-up resistor and LIN pin min current limitation. 2. Equivalent to discharging a 100 pF capacitor through a 1.5 kW resistor conform to MIL STD 883 method 3015.7. 3. Equivalent to discharging a 150 pF capacitor through a 330 W resistor. System HBM levels are verified by an external test-house. 4. Direct Capacitor Coupling (DCC) method according to SAE J2962-1 specification, referring to ISO 7637-3 Slow Transient Pulse. Coupling Capacitor 10 nF. Tested with no external protections. Verified by an external test house. Table 2. THERMAL CHARACTERISTICS Symbol Value Unit Thermal characteristics, SOIC-8 (Note 5) Thermal Resistance Junction-to-Air, Free air, 1S0P PCB (Note 6) Thermal Resistance Junction-to-Air, Free air, 2S2P PCB (Note 7) Parameter RqJA RqJA 125 75 C/W C/W Thermal characteristics, DFN8 (Note 5) Thermal Resistance Junction-to-Air, Free air, 1S0P PCB (Note 6) Thermal Resistance Junction-to-Air, Free air, 2S2P PCB (Note 7) RqJA RqJA 140 47 C/W C/W 5. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 6. Values based on test board according to EIA/JEDEC Standard JESD51-3, signal layer with 10% trace coverage. 7. Values based on test board according to EIA/JEDEC Standard JESD51-7, signal layers with 10% trace coverage. www.onsemi.com 2 NCV7321 BLOCK DIAGRAM VBB INH POR VBB State & Wake-up Control WAKE Thermal shutdown EN Osc COMP + RxD - TxD Filter LIN Slope Control time-out NCV7321 GND Figure 1. Block Diagram TYPICAL APPLICATION bat ECU VBAT LIN WAKE LIN 6 WAKE 3 7 NCV7321 INH 8 5 3.3/5V VCC 1 RxD 4 TxD 2 EN GND GND Microcontroller VBB GND KL30 LIN- BUS KL31 Figure 2. Typical Application Diagram for a Master Node Table 3. PIN DESCRIPTION Pin Name Description 1 RxD Receive Data Output; Low in Dominant State; Open-Drain Output 2 EN Enable Input, Transceiver in Normal Operation Mode when High, Pull-down Resistor to GND 3 WAKE 4 TxD Transmit Data Input, Low for Dominant State, Pull-down to GND (Switchable Strength for Wake-up Source Recognition) 5 GND Ground 6 LIN LIN Bus Output/Input 7 VBB Battery Supply Input 8 INH Inhibit Output, Switch Between INH and VBB can be Used to Control External Regulator or Pull-up Resistor on LIN Bus - EP Exposed Pad. Recommended to connect to GND or left floating in application (DFN8 package only). High Voltage Digital Input Pin to Apply Local Wake-up, Sensitive to Falling Edge, Pull-up Current Source to VBB www.onsemi.com 3 NCV7321 Table 4. ABSOLUTE MAXIMUM RATINGS Max Unit VBB Symbol Voltage on Pin VBB -0.3 +45 V VLIN LIN Bus Voltage -45 +45 V VWAKE DC Voltage on WAKE Pin -35 +45 V VINH DC Voltage on INH Pin -0.3 VBB + 0.3 V IINH DC Current from INH Pin 50 mA V_Dig_IO DC Input Voltage on Pins (EN, RxD, TxD) -0.3 +45 V TJ Maximum Junction Temperature -40 +150 C VESD HBM (All Pins) (Note 8) -4 +4 kV CDM (All Pins) (Note 9) VTRAN Parameter Min Typ -750 +750 V Version NCV7321D10: HBM (LIN, INH, VBB, WAKE) (Note 10) System HBM (LIN, VBB, WAKE) (Note 11) -5 -5 +5 +5 kV kV Version NCV7321D11/D12/MW2: HBM (LIN, INH, VBB, WAKE) (Note 10) System HBM (VBB, WAKE) (Note 12) System HBM (LIN) (Note 12) -8 -6 -10 +8 +6 +10 kV kV kV Version NCV7321D12/MW2: Powered ESD (LIN), Contact/Air, 330 pF / 2 kW (Note 13) Powered ESD (LIN), Air, 150 pF / 2 kW (Note 13) -15 -25 +15 +25 kV kV -85 +85 V Version NCV7321D12/MW2; Voltage transients (DCC method), pin LIN According to SAE J2962-1, Class C (Note 14) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 8. Equivalent to discharging a 100 pF capacitor through a 1.5 kW resistor conform to MIL STD 883 method 3015.7. 9. Charged device model test according to ESD STM5.3.1-1999. 10. Equivalent to discharging a 100 pF capacitor through a 1.5 kW resistor referenced to GND. 11. Equivalent to discharging a 150 pF capacitor through a 330 W resistor. 220 nF filter on LIN pin. System HBM levels are verified by an external test-house. 12. Equivalent to discharging a 150 pF capacitor through a 330 W resistor. No filter on LIN pin. System HBM levels are verified by an external test-house. 13. Powered ESD test method according to SAE J2962-1 specification, referring to ISO 10605. Verified by an external test house. 14. Direct Capacitor Coupling (DCC) method according to SAE J2962-1 specification, referring to ISO 7637-3 Slow Transient Pulse. Coupling Capacitor 10 nF. Tested with no external protections. Verified by an external test house. www.onsemi.com 4 NCV7321 FUNCTIONAL DESCRIPTION Overall Functional Description The junction temperature is monitored via a thermal shutdown circuit that switches the LIN transmitter off when temperature exceeds the TSD trigger level. The NCV7321 has four operating states (unpowered mode, standby mode, normal mode and sleep mode) that are determined by the supply voltage VBB, input signals EN and WAKE and activity on the LIN bus. LIN is a serial communication protocol that efficiently supports the control of mechatronic nodes in distributed automotive applications. The domain is class-A multiplex buses with a single master node and a set of slave nodes. The NCV7321 contains the LIN transmitter, LIN receiver, power-on-reset (POR) circuits and thermal shutdown (TSD). The LIN transmitter is optimized for the maximum specified transmission speed of 20 kB with EMC performance due to reduced slew rate of the LIN output. OPERATING STATES Standby mode Normal mode - LIN Transceiver: OFF - LIN Term: 30 kW - INH Pin = High - RxD: Low After a Wake-up/ Floating Otherwise - TxD: Wake-up Source Flag EN = High for t > T_enable - LIN Transceiver: ON - LIN Term: 30 kW - INH Pin: High - RxD: Received LIN Data - TxD: Weak Pull-down Transmitter Input LIN Wake-Up or Local Wake-Up VBB Above Reset Level EN = Low for t > T_disable EN = High for t > T_enable Sleep Mode Unpowered (VBB Below Reset Level) - LIN Transceiver: OFF - LIN Term: Floating - INH Pin: Floating - RxD: Floating - TxD: Weak Pull-down - LIN Transceiver: OFF - LIN Term: Current Source - INH Pin: Floating - RxD: Floating - TxD: Weak Pull-down Figure 3. State Diagram Unpowered Mode high-impedant and the pull-down applied on pin TxD remains weak. * After a wake-up event is recognized while the chip was in the sleep mode. Pin RxD is pulled low while pin TxD signals the type of wake-up leading to the standby mode - its pull-up remains weak for LIN wake-up and it is switched to strong pull-down for the case of local wake-up (i.e. wake-up via Pin WAKE). While in the standby mode, the configuration of Pins RxD and TxD remains unchanged, regardless the activity on WAKE and LIN Pins - i.e. if additional wake-ups occur during the standby mode, they have no influence on the chip configuration. As long as VBB remains below its power-on-reset level, the chip is kept in a safe unpowered state. LIN transmitter is inactive, both LIN and INH pins are left floating and only a weak pull-down is connected on pin TxD. Pin RxD remains floating. The unpowered state will be entered from any other state when VBB falls below its power-on-reset level. Standby Mode Standby mode is a low-power mode, where LIN transceiver remains inactive while INH pin is driven high to activate an external voltage regulator - see Figure 2. Depending on the transition which led to the standby mode, pins RxD and TxD are configured differently during this mode. A 30 kW resistor in series with a reverse-protection diode is internally connected between LIN and VBB Pins. Standby mode is entered in one of the following ways: * After the voltage level at VBB pin rises above its power-on-reset level. In this case, RxD Pin remains Normal Mode In normal mode, the full functionality of the LIN transceiver is available. Data according the state of TxD input are sent to the LIN bus while pin RxD reflects the logical symbol received on the LIN bus - high-impedant for recessive and Low for dominant. A 30 kW resistor in series www.onsemi.com 5 NCV7321 the chip in the normal mode (e.g. strong pull-down on TxD after local wake-up vs. High logical level on TxD required to send a recessive symbol on LIN). with a reverse-protection diode is internally connected between LIN and VBB pins. To avoid that, due to a failure of the application (e.g. software error), the LIN bus is permanently driven dominant and thus blocking all subsequent communication, signal on pin TxD passes through a timer, which releases the bus in case TxD remains low for longer than T_TxD_timeout. The transmission can continue once the TxD returns to High logical level. In case the junction temperature increases above the thermal shutdown threshold, e.g. due to a short of the LIN wiring to the battery, the transmitter is disabled and releases LIN bus to recessive. Once the junction temperature decreases back below the thermal shutdown release level, the transmission can be enabled again - however, to avoid thermal oscillations, first a High logical level on TxD must be encountered before the transmitter is enabled. As required by SAE J2602, the transceiver must behave safely below its operating range - it shall either continue to transmit correctly (according its specification) or remain silent (transmit a recessive state regardless of the TxD signal). A battery monitoring circuit in NCV7321 de-activates the transmitter in the normal mode if the VBB level drops below MONL_VBB. Transmission is enabled again when VBB reaches MONH_VBB. The internal logic remains in the normal mode and the reception from the LIN line is still possible even if the battery monitor disables the transmission. Although the specifications of the monitoring and power-on-reset levels are overlapping, it's ensured by the implementation that the monitoring level never falls below the power-on-reset level. Normal mode can be entered from either standby or sleep mode when EN Pin is High for longer than T_enable. When the transition is made from standby mode, TxD pull-down is set to weak and RxD is put high-impedant immediately after EN becomes High (before the expiration of T_enable filtering time). This excludes signal conflicts between the standby mode pin settings and the signals required to control WAKE VBB Sleep Mode Sleep mode provides extremely low current consumption. The LIN transceiver is inactive and the battery consumption is minimized. Pin INH is put to high-impedant state to disable the external regulator and, in case of a master node, the LIN termination - see Figure 2. Only a weak pull-up current source is internally connected between LIN and VBB Pins, in order to minimize current consumption even in case of LIN short to GND. Sleep mode can be entered from normal mode by assigning Low logical level to pin EN for longer than T_disable. The sleep mode can be entered even if a permanent short occurs either on LIN or WAKE Pin. If a wake-up event occurs during the transition between normal and sleep mode (during the T_disable filtering time), it will be regarded as valid wake-up and the chip will enter standby mode with the appropriate setting of Pins RxD and TxD. Wake-up Two types of wake-up events are recognized by NCV7321: * Local wake-up - when a high-to-low transition on pin WAKE is encountered and WAKE pin remains Low at least during T_WAKE - see Figure 4. * Remote (or LIN) wake-up - when LIN bus is externally driven dominant during longer than T_LIN_wake and a rising edge on LIN occurs afterwards - see Figure 5. Wake-up events can be exclusively detected in sleep mode or during the transition from normal mode to sleep mode. Due to timing tolerances, valid wake-up events beginning shortly before normal-to-sleep mode transition can be also sometimes regarded as valid wake-ups. Local Wake-up recognized T_WAKE V_WAKE_th Sleep Mode Standby Mode Figure 4. Local Wake-up Detection www.onsemi.com 6 t NCV7321 LIN Detection of Remote Wake-Up VBB LIN recessive level T_LIN_wake 60% VBB T_to_stb 40% VBB Sleep Mode LIN dominant level t Standby Mode Figure 5. Remote (LIN) Wake-up Detection ELECTRICAL CHARACTERISTICS Definitions All voltages are referenced to GND (Pin 5). Positive currents flow into the IC. Table 5. DC CHARACTERISTICS (VBB = 5 V to 27 V; TJ = -40C to +150C; Bus Load = 500 W (VBB to LIN); unless otherwise specified. Typical values are given at VBB = 12 V and TJ = 25C, unless otherwise specified.) Parameter Symbol Conditions Min Typ Max Unit VBB CURRENT CONSUMPTION IBB_ON_rec VBB Consumption Normal Mode; LIN Recessive VLIN = VBB = VINH = VWAKE 1.6 mA IBB_ON_dom VBB Consumption Normal Mode; LIN Dominant VBB = VINH = VWAKE 8 mA IBB_STB VBB Consumption Standby Mode VLIN = VBB = VINH = VWAKE 350 mA IBB_SLP VBB Consumption Sleep Mode VLIN = VBB = VINH = VWAKE 30 mA IBB_SLP_18V VBB Consumption Sleep Mode, VBB < 18 V VLIN = VBB = VINH = VWAKE (Note 15) 20 mA IBB_SLP_12V VBB Consumption Sleep Mode, VBB = 12 V, TJ < 85C VLIN = VBB = VINH = VWAKE (Note 15) 10 mA POR AND VBB MONITOR PORH_VBB Power-on Reset High Level on VBB VBB Rising 2 4.5 V PORL_VBB Power-on Reset Low Level on VBB VBB Falling 1.7 4 V MONH_VBB Battery Monitoring High Level VBB Rising 4.5 V MONL_VBB Battery Monitoring Low Level VBB Falling LIN Dominant Output Voltage TxD = Low; VBB = 7.3 V 3 V LIN TRANSMITTER VLIN_dom_LoSup 1.2 V 15. Values based on design and characterization. Not tested in production. 16. The voltage drop in Normal mode between LIN and VBB pin is the sum of the diode drop and the drop at serial pull-up resistor. The drop at the switch is negligible. See Figure 1. www.onsemi.com 7 NCV7321 Table 5. DC CHARACTERISTICS (VBB = 5 V to 27 V; TJ = -40C to +150C; Bus Load = 500 W (VBB to LIN); unless otherwise specified. Typical values are given at VBB = 12 V and TJ = 25C, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit 2.0 V VBB - 1.5 VBB V 40 200 mA 33 47 kW 20 30 pF 0.4 VBB LIN TRANSMITTER VLIN_dom_HiSup LIN Dominant Output Voltage TxD = Low; VBB = 18 V VLIN_REC LIN Recessive Output Voltage (Note 16) TxD = High; ILIN = 10 mA ILIN_lim Short Circuit Current Limitation VLIN = VBB_max Rslave Internal Pull-up Resistance CLIN Capacitance on Pin LIN (Note 15) 20 LIN RECEIVER Vbus_dom Bus Voltage for Dominant State Vbus_rec Bus Voltage for Recessive State Vrec_dom Receiver Threshold LIN Bus Recessive - Dominant 0.4 0.6 VBB Vrec_rec Receiver Threshold LIN Bus Dominant - Recessive 0.4 0.6 VBB Vrec_cnt Receiver Centre Voltage (Vrec_dom + Vrec_rec)/2 0.475 0.525 VBB Vrec_hys Receiver Hysteresis (Vrec_rec - Vrec_dom) 0.05 0.175 VBB ILIN_off_dom LIN Output Current, Bus in Dominant State Normal Mode, Driver Off; VBB = 12 V, VLIN = 0 V -1 ILIN_off_dom_slp LIN Output Current, Bus in Dominant State Sleep Mode, Driver Off; VBB = 12 V, VLIN = 0 V -20 ILIN_off_rec LIN Output Current, Bus in Recessive State Driver Off; VBB < 18 V; VBB < VLIN < 18 V ILIN_no_GND Communication not Affected VBB = GND = 12 V; 0 < VLIN < 18 V ILIN_no_VBB LIN Bus Remains Operational VBB = GND = 0 V; 0 < VLIN < 18 V 0.6 VBB mA -15 -1 -2 mA 1 mA 1 mA 5 mA PIN EN Vil_EN Low Level Input Voltage -0.3 0.8 V Vih_EN High Level Input Voltage 2.0 5.5 V Rpd_EN Pull-down Resistance to Ground 150 650 kW Vil_TxD Low Level Input Voltage -0.3 0.8 V Vih_TxD High Level Input Voltage 2.0 5.5 V Rpd_TxD Pull-down Resistor on TxD Pin, Corresponding to "Weak Pull-down" 650 kW 350 PIN TxD Normal Mode or Sleep Mode or Standby Mode after Power up or Standby Mode after LIN Wake-up 150 350 15. Values based on design and characterization. Not tested in production. 16. The voltage drop in Normal mode between LIN and VBB pin is the sum of the diode drop and the drop at serial pull-up resistor. The drop at the switch is negligible. See Figure 1. www.onsemi.com 8 NCV7321 Table 5. DC CHARACTERISTICS (VBB = 5 V to 27 V; TJ = -40C to +150C; Bus Load = 500 W (VBB to LIN); unless otherwise specified. Typical values are given at VBB = 12 V and TJ = 25C, unless otherwise specified.) Symbol Parameter Conditions Min Typ Max Unit Pull-down Current on TxD Pin Corresponding to "Strong Pull-down" Standby Mode after Local Wake-up 1.5 mA Iol_RxD Low Level Output Current VRxD = 0.4 V, Normal Mode, VLIN = 0 V 1.5 mA Ioh_RxD High Level Output Current VRxD = 5 V, Normal Mode, VLIN = VBB -5 PIN TxD Ipd_TxD_Strong PIN RxD 0 5 mA VBB - 1.1 V PIN WAKE V_wake_th WAKE Threshold Voltage VBB - 3.3 I_wake_pull-up Pull-up Current on Pin WAKE VWAKE = 0 V -30 -15 -1 mA I_wake_leak Leakage of Pin WAKE VWAKE = VBB -5 0 5 mA Delta_VH High Level Voltage Drop IINH = 15 mA, INH Active 0.05 0.35 0.75 V I_leak Leakage Current Sleep Mode; VINH = 0 V -1 0 1 mA Temperature Rising 150 165 185 C PIN INH THERMAL SHUTDOWN TJSD Thermal Shutdown Junction Temperature TJSD_hyst Thermal Shutdown Hysteresis 5 C 15. Values based on design and characterization. Not tested in production. 16. The voltage drop in Normal mode between LIN and VBB pin is the sum of the diode drop and the drop at serial pull-up resistor. The drop at the switch is negligible. See Figure 1. www.onsemi.com 9 NCV7321 Table 6. AC CHARACTERISTICS (VBB = 5 V to 27 V; TJ = -40C to +150C; unless otherwise specified. For the transmitter parameters, the following bus loads are considered: L1 = 1 kW / 1 nF; L2 = 660 W / 6.8 nF; L3 = 500 W / 10 nF) Symbol Parameter Conditions Min Typ Max Unit LIN TRANSMITTER D1 Duty Cycle 1 = tBUS_REC(min) / (2 x TBIT) THREC(max) = 0.744 x VBB THDOM(max) = 0.581 x VBB TBIT = 50 ms VBB = 7 V to 18 V 0.396 0.5 D2 Duty Cycle 2 = tBUS_REC(max) / (2 x TBIT) THREC(min) = 0.422 x VBB THDOM(min) = 0.284 x VBB TBIT = 50 ms VBB = 7.6 V to 18 V 0.5 0.581 D3 Duty Cycle 3 = tBUS_REC(min) / (2 x TBIT) THREC(max) = 0.778 x VBB THDOM(max) = 0.616 x VBB TBIT = 96 ms VBB = 7 V to 18 V 0.417 0.5 D4 Duty Cycle 4 = tBUS_REC(max) / (2 x TBIT) THREC(min) = 0.389 x VBB THDOM(min) = 0.251 x VBB TBIT = 96 ms VBB = 7.6 V to 18 V 0.5 0.590 Ttx_prop_down Propagation Delay of TxD to LIN. TxD high to low (Note 17) 6 ms Ttx_prop_up Propagation Delay of TxD to LIN. TxD low to high (Note 17) 6 ms T_fall LIN Falling Edge Normal Mode; VBB = 12 V 22.5 ms T_rise LIN Rising Edge Normal Mode; VBB = 12 V 22.5 ms T_sym LIN Slope Symmetry Normal Mode; VBB = 12 V 4 ms -4 0 LIN RECEIVER Trec_prop_down Propagation Delay of Receiver Falling Edge 0.1 6 ms Trec_prop_up Propagation Delay of Receiver Rising Edge 0.1 6 ms Trec_sym Propagation Delay Symmetry Trec_prop_down - Trec_prop_up -2 2 ms 30 150 ms MODE TRANSITIONS AND TIMEOUTS T_LIN_wake Duration of LIN Dominant for Detection of Wake-up via LIN bus Sleep Mode T_to_stb Delay from LIN Bus Dominant to Recessive Edge to Entering of Standby Mode after Valid LIN Wake-up Sleep Mode T_WAKE Duration of Low Level on WAKE Pin for Local Wake-up Detection Sleep Mode 7 T_enable Duration of High Level on EN Pin for Tran- sition to Normal Mode Version NCV7321D10 2 Version NCV7321D11/D12/MW2 Duration of Low Level on EN Pin for Tran- sition to Sleep Mode TxD Dominant Time-Out T_disable T_TxD_timeout 90 ms 10 50 ms 5 10 ms 2 7.5 18.5 ms Version NCV7321D10 2 5 10 ms Version NCV7321D11/D12/MW2 2 7.5 18.5 ms Normal Mode, TxD = Low, Guaran- tees Baudrate as Low as 1 kbps 15 50 ms 17. Values based on design and characterization. Not tested in production. www.onsemi.com 10 NCV7321 TxD t BIT t BIT 50% t tBUS_DOM(max) LIN tBUS_REC(min) THREC(max) THDOM(max) Thresholds of receiving node 1 THREC(min) THDOM(min) Thresholds of receiving node 2 t tBUS_DOM(min) tBUS_REC(max) Figure 6. LIN Transmitter Duty Cycle TxD tBIT tBIT 50% t LIN VBB 60% VBB 40% VBB ttx_prop_down t ttx_prop_up Figure 7. LIN Transmitter Timing LIN 100% 60% 60% 40% 40% 0% t T_fall T_rise Figure 8. LIN Transmitter Rising and Falling Times www.onsemi.com 11 NCV7321 LIN VBB 60% VBB 40% VBB t RxD trec_prop_down trec_prop_up 50% t Figure 9. LIN Receiver Timing DEVICE ORDERING INFORMATION Part Number NCV7321D10G NCV7321D10R2G NCV7321D11G NCV7321D11R2G Description Temperature Range -40C to +125C Improved Stand-alone LIN Transceiver ESD Improved Stand-alone LIN Transceiver Shipping 96 Tube / Tray Stand-alone LIN Transceiver SOIC-8 (Pb-Free) 3000 / Tape & Reel 96 Tube / Tray 3000 / Tape & Reel NCV7321D12R2G NCV7321MW2R2G Package -40C to +125C SOIC-8 (Pb-Free) 3000 / Tape & Reel DFN8 Wettable Flank (Pb-Free) 3000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 12 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8, 3x3, 0.65P CASE 506DG ISSUE A 1 SCALE 2:1 A B D PIN ONE REFERENCE 2X 0.10 C 2X DETAIL A EEE EEE EEE EEE 0.10 C L ALTERNATE TERMINAL CONSTRUCTION E A A3 SIDE VIEW SEATING PLANE 1 D2 DETAIL A 1 8X C A1 4 L e/2 8 5 8X b 0.10 C A B e BOTTOM VIEW 0.05 C *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot " G", may or may not be present. NOTE 3 RECOMMENDED SOLDERING FOOTPRINT* 2.56 1.70 CCCCCCCC CCCCCCCC CCCCCCCC CCCCCCCC 1 0.65 PITCH XXXXXX XXXXXX ALYWG G XXXXXX= Specific Device Code A = Assembly Location L = Wafer Lot Y = Year W = Work Week G = Pb-Free Package (Note: Microdot may be in either location) E2 K MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.25 0.35 3.00 BSC 2.30 2.50 3.00 BSC 1.50 1.70 0.65 BSC 0.30 TYP 0.35 0.45 GENERIC MARKING DIAGRAM* 0.05 C NOTE 4 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. DIM A A1 A3 b D D2 E E2 e K L TOP VIEW 0.05 C DATE 28 APR 2016 8X 0.60 3.30 8X 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON10527G DFN8 3X3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOIC-8 CASE 751AZ ISSUE B 8 1 SCALE 1:1 NOTES 4&5 0.10 C D 45 5 CHAMFER D h NOTE 6 D A 8 DATE 18 MAY 2015 H 2X 5 0.10 C D E E1 NOTES 4&5 L2 1 0.20 C D 4 8X B NOTE 6 TOP VIEW b 0.25 M L C DETAIL A C A-B D NOTES 3&7 NOTE 7 c 0.10 C e A1 C SIDE VIEW NOTE 8 DIM A A1 A2 b c D E E1 e h L L2 DETAIL A A2 A SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.004 mm IN EXCESS OF MAXIMUM MATERIAL CONDITION. 4. DIMENSION D DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.006 mm PER SIDE. DIMENSION E1 DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.010 mm PER SIDE. 5. THE PACKAGE TOP MAY BE SMALLER THAN THE PACKAGE BOT TOM. DIMENSIONS D AND E1 ARE DETERMINED AT THE OUTER MOST EXTREMES OF THE PLASTIC BODY AT DATUM H. 6. DIMENSIONS A AND B ARE TO BE DETERMINED AT DATUM H. 7. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.10 TO 0.25 FROM THE LEAD TIP. 8. A1 IS DEFINED AS THE VERTICAL DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. SEATING PLANE END VIEW RECOMMENDED SOLDERING FOOTPRINT* MILLIMETERS MIN MAX --1.75 0.10 0.25 1.25 --0.31 0.51 0.10 0.25 4.90 BSC 6.00 BSC 3.90 BSC 1.27 BSC 0.25 0.41 0.40 1.27 0.25 BSC GENERIC MARKING DIAGRAM* 8X 0.76 8 8X 1.52 1 7.00 XXXXX A L Y W G 1 1.27 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON34918E SOIC-8 XXXXX ALYWX G = Specific Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb-Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G", may or not be present. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. (c) Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. 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