1N4148WS-V
www.vishay.com Vishay Semiconductors
Rev. 1.9, 23-Mar-12 1Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diode
MARKING (example only)
Bar = cathode marking
XY = type code
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
GS18/10K per 13” reel (8 mm tape), 10K/box
GS08/3K per 7” reel (8 mm tape) , 15K/box
FEATURES
• These diodes are also available in other case
styles including the DO-35 case with the type
designation 1N4148, the MiniMELF case with
the type designation LL4148, and the SOT-23
case with the type designation IMBD4148-V
• Silicon epitaxial planar diode
• Fast switching diodes
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
Note
(1) Valid provided that electrodes are kept at ambient temperature.
20145
12
1 = Cathode
2 = Anode
22611
X
Y
22610
PARTS TABLE
PART ORDERING CODE TYPE MARKING REMARKS
1N4148WS-V 1N4148WS-V-GS18 or 1N4148WS-V-GS08 A2 Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR75 V
Repetitive peak reverse voltage VRRM 100
Average rectified current half
wave rectification with resistive
load (1)
f 50 Hz IF(AV) 150 mA
Surge forward current t < 1 s and Tj = 25 °C IFSM 350
Power dissipation (1) Ptot 200 mW
1N4148WS-V
www.vishay.com Vishay Semiconductors
Rev. 1.9, 23-Mar-12 2Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1) Valid provided that electrodes are kept at ambient temperature
RECTIFICATION EFFICIENCY MEASUREMENT CIRCUIT
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air (1) RthJA 650 K/W
Junction temperature Tj150
°COperating temperature range Tj- 55 to + 150
Storage temperature range Tstg - 65 to + 150
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 10 mA VF1000 mV
IF = 100 mA VF1200
Leakage current
VR = 20 V IR25 nA
VR = 75 V IR5
μAVR = 100 V IR100
VR = 20 V, Tj = 150 °C IR50
Diode capacitance VF = VR = 0 V CD4pF
Voltage rise when switching ON
Tested with 50 mA pulses,
tp = 0.1 μs, rise time < 30 ns,
fp = (5 to 100) kHz
Vfr 2.5 V
Reverse recovery time IF = 10 mA, IR = 1 mA, VR = 6 V,
RL = 100 trr 4ns
Rectification efficiency f = 100 MHz, VRF = 2 V 0.45
17436
60 Ω5 kΩ
2 nF
V
O
V
RF
= 2 V
1N4148WS-V
www.vishay.com Vishay Semiconductors
Rev. 1.9, 23-Mar-12 3Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Forward characteristics
Fig. 2 - Dynamic Forward Resistance vs. Forward Current
Fig. 3 - Admissible Power Dissipation vs. Ambient Temperature
Fig. 4 - Relative Capacitance vs. Reverse Voltage
Fig. 5 - Leakage Current vs. Junction Temperature
17437
012
VF (V)
IF (mA)
10-1
10-2
1
10
102
103
Tj = 100 °C Tj = 25 °C
17438
f = 1 kHz
Tj = 25 °C
IF (mA)
Rf (Ω)
10
102
103
104
10-2 10-1 110
2
10
2
5
2
5
2
5
2
5
0
50
100
150
200
250
0 50 100 150 200
20324
Tamb - Ambient Temperature (°C)
Ptot - Power Dissipation (mW)
17440
V
R
(V)
0.7
0.8
0.9
1.0
1.1 f = 1 MHz
Tj = 25 °C
2086410
C
D
(V
R
)
C
D
(0 V)
17441 Tj (°C)
IR (nA)
10
102
103
104
100 200
2
5
2
5
2
5
2
5
VR = 20 V
1
0
1N4148WS-V
www.vishay.com Vishay Semiconductors
Rev. 1.9, 23-Mar-12 4Document Number: 85751
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 6 - Admissible Repetitive Peak Forward Current vs. Pulse Duration
PACKAGE DIMENSIONS in millimeters (inches): SOD-323
17442
tP (s)
IFRM (A)
100
1
3
5
10-5 10-4 10-3 1010-1
10-2 25 2 525 25 25 25
2
4
10
3
5
2
4
1
3
5
2
4
0.1
I
IFRM
T
n = tP/T T = 1/fP
t
tP
n = 0
0.1
0.2
0.5
Foot print recommendation:
Rev. 5 - Date: 23.Sept.2009
17443
Document no.:S8-V-3910.02-001 (4)
0.6 (0.024)
0.6 (0.024)0.6 (0.024)
1.6 (0.063)
0.10 (0.004)
Cathode bar
0.20 (0.008)
0.40 (0.016)
2.50 (0.098)
1.1 (0.043)
1.5 (0.059)
2.85 (0.112)
1.60 (0.063)
1.95 (0.077)
0.15 (0.006)
0.1 (0.004) max.
1.15 (0.045)
0.8 (0.031)
Created - Date: 24.August.2004
0.40 (0.016)
0.25 (0.010)
0.2 (0.008)
0° to 8°
Legal Disclaimer Notice
www.vishay.com Vishay
Revision: 12-Mar-12 1Document Number: 91000
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