TRANSYS BDW84, BDW84A, BDW84B, BDW84C, BDW84D ELECTRONICS PNP SILICON POWER DARLINGTONS LIMITED SOT-93 PACKAGE ; ; (TOP VIEW) @ Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D @ 150 W at 25C Case Temperature 2 C) C) e ; 15 A Continuous Collector Current @ Minimum he_ of 750 at3 V,6A Pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING SYMBOL VALUE UNIT BDW84 -45 BDW84A -60 Collector-base voltage (I = 0) BDW84B Vopo -80 Vv BDW84C -100 BDW84D -120 BDW84 -45 BDW84A -60 Collector-emitter voltage (Ip = 0) (see Note 1) BDW84B VcEO -80 Vv BDW84C -100 BDW84D -120 Emitter-base voltage VeBo 5 Vv Continuous collector current fe -15 A Continuous base current lp -0.5 A Continuous device dissipation at (or below) 25C case temperature (see Note 2) Prot 150 WwW Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Prot 3.5 WwW Unclamped inductive load energy (see Note 4) YoLlo? 100 mJ Operating junction temperature range T; -65 to +150 C Operating temperature range Tstg -65 to +150 C Operating free-air temperature range Ty -65 to +150 C NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150C case temperature at the rate of 1.2 W/C. 3. Derate linearly to 150C free air temperature at the rate of 28 mW/C. 4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 MH, Ipyon) = -5 MA, Ree = 100 Q, VBE(ott) = 0, Rs = 0.1 Q, Voc =-20V.BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS electrical characteristics at 25C case temperature (unless otherwise noted) PARAMETER TEST CONDITIONS MIN | TYP | MAX | UNIT BDW84 -45 . BDW84A -60 Vv Collector-emitter Ilo= -30MA In =0 (see Note 5) BDW84B -80 Vv (BR)CEO breakdown voltage c B BDW84C -100 BDW84D -120 Vop= -30V Ip=0 BDW84 -1 . Vop= -30V Ip=0 BDW84A -1 Collector-emitter IcEO cut-off current Voce = -40V IRp=0 BDW84B -1 mA Vop = -50V IRp=0 BDW84C -1 Vocep = -60V IRp=0 BDW84D -1 Vop= -45V lp =0 BDW84 -0.5 Vop= -60V lp =0 BDW84A -0.5 Vop= -80V lp =0 BDW84B -0.5 Vop = -100 V lp =0 BDW84C -0.5 leno Collector cut-off Vop = -120 V lp =0 BDW84D -0.5 mA current Vop= -45V lp =0 Tc = 150C BDW84 5 Vop= -60V lp =0 Tc = 150C BDW84A 5 Vop= -80V lp =0 Tc = 150C BDW84B 5 Vop = -100 V lp =0 Tc = 150C BDW84C 5 Vop = -120 V lp =0 Tc = 150C BDW84D 5 leo Emitter cut-off Vep= BV lo =0 2 mA current Forward current Vep= -3V Ic= -6A 750 20000 Nee . (see Notes 5 and 6) transfer ratio Vep= -3V Ic =-15A 100 Vee(on) eemiter Voe= -3V Ig= -6A (see Notes 5 and 6) 25| Vv voltage Collector-emitter Ip= -12mA Ic= -6A -2.5 VocE(sat) . (see Notes 5 and 6) Vv saturation voltage Ip = -150 mA Ic =-15A -4 Veo Parallel diode l= -15A Ip =0 35 Vv forward voltage NOTES: 5. These parameters must be measured using pulse techniques, t, = 300 us, duty cycle < 2%. 6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER MIN | TYP | MAX | UNIT Rec Junction to case thermal resistance 0.83 C/W Roya Junction to free air thermal resistance 35.7 C/W resistive-load-switching characteristics at 25C case temperature PARAMETER TEST CONDITIONS + MIN | TYP | MAX | UNIT ton Turn-on time IG =-10A IB(on) = 40 mA IByotty = 40 MA 0.9 us tort Turn-off time Vepevott) = 4-2 V RE =3Q tp = 20 ps, de < 2% 7 us t Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS - Typical DC Current Gain Neg 10000 1000 100 V -0-5 t, cE TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN VS COLLECTOR CURRENT = 3V = 300 us, duty cycle < 2% -1-0 Ty = -40C Ty= 25C T, = 100C |, - Collector Current - A Figure 1. Vee(sat - Base-Emitter Saturation Voltage - V -3-0 Vee(eat - COllector-Emitter Saturation Voltage - V -20 COLLECTOR-EMITTER SATURATION VOLTAGE VS COLLECTOR CURRENT -2.0 t, = 300 us, duty cycle < 2% /, Vlg =l_/100 } 1-5 if 7 YH, 40 f/ Ly a < PL) -0-5 aw \ NN NY T, = -40C ST. = 25C NT, = 100C 0 Ld -0-5 -1-0 -10 -20 I, - Collector Current - A Figure 2. BASE-EMITTER SATURATION VOLTAGE VS COLLECTOR CURRENT Tg = -40C To= 25C WN 1 : AA -2-5}T, = 100C \\S WA 2.0 NEG -2. Y/ yo HY La LO |) 1-5 -0-5 I, =I,/100 t, = 900 ps, duty cycle < 2% 0 1 1 dee 1 1 1 -0-5 -1-0 -10 -20 |, - Collector Current - A Figure 3.BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS -100 MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA < = -10 g 6 S 3 9 Oo 1, 71-0 -0-1 -1-0 -10 -100 -1000 Vog - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 160 140 = 6 120 g 100 \ 2 a0 \ ao Ee = 60 & = 40 \ a= 20 \ 0 0 25 50 75 100 125 150 T, - Case Temperature - C Figure 5.BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 15,2 137 _ sl ig 4,1 _ ~_ > oe a0 NY 14,7 3,95 1,17 [4,15 | 16,2 MAX. 12,2 MAX. OC | 31,0 TYP. Le ly 18,0 TYP, 1,30 0,78 _ ty ae 1,10 0,50 2,50TYP.pl q ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab.