A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
S
p
ecifi cations are sub
j
ect to chan
g
e without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCEO IC = 80 mA 30 V
BVCER IC = 120 mA RBE = 75 Ω 40 V
BVEBO IE = 20 mA 3.5 V
ICES VE = 28 V 10 mA
hFE VCE = 5.0 V IC = 4.0 A 25 120 ---
PG
η
ηη
ηC
VCE = 28 V ICQ = 2 X 100 mA f = 860 MHz
POUT = 100 W PREF = 25 W 8.5
55
dB
NPN SILICON RF POWER TRANSISTOR
SD4100
DESCRIPTION:
The ASI SD4100 is a gold mettalized
RF power transistor designed for high
linearity Class-AB operat ion in UHF
and band IV and V for TV transmitter s .
It ut ilizes emit t e r ballasting for high
reliability and rug gedness.
FEATURES:
• Common Emit t er, Class AB push-pull
• PG = 8.5 dB at 100 W/860 MHz
• Omnigold™ Metalization System
• 28 V operations
MAXIMUM RATINGS
IC 16 A
VCB 65 V
VCE 30 V
PDISS 220 W @TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 0.8 °C/W
PACKAGE STYLE .450 BAL FLG(A)
1 = COLLECTOR 2 = BASE 3 = EMITTER
MINIMUM
inches / mm
.455 / 11.56
B
C
D
E
F
G
A
MAXIMUM
.120 / 3.05
.465 / 11.81
inches / mm
H
DIM
L
M
J
K
1.095 / 27.81
.002 / 0.05
.080 . 2.03
1.105 / 28.07
.005 / 0.15
.095 / 2.41
P
N.455 / 11.56
.195 / 4.95
.445 / 11.30
.055 / 1.40 .065 / 1.65
K J
GH
F
C
DE
L
MN
P
.060x45° BAFULL R .100x45°
.130 / 3.30
.785 / 19.94
.055 / 1.40
.230 / 5.84
.525 / 13.34 .535 / 13.59
.120 / 3.05 .130 / 3.30
.838 / 21.28 .850 / 21.59
1
1
2
2
3
3
