/TechnicalInformation IGBT- IGBT-modules FF200R17KE3 62mmC-SerienModulmitTrench/FeldstopIGBTundEmitterControlledDiode 62mmC-seriesmodulewithtrench/fieldstopIGBTandEmitterControlleddiode IGBT,/IGBT,Inverter /MaximumRatedValues PreliminaryData Collector-emittervoltage Tvj = 25C VCES 1700 V ContinuousDCcollectorcurrent TC = 80C, Tvj max = 150C TC = 25C, Tvj max = 150C IC nom IC 200 310 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 400 A Totalpowerdissipation TC = 25C, Tvj max = 150 Ptot 1250 W Gate-emitterpeakvoltage VGES +/-20 V /CharacteristicValues min. Collector-emittersaturationvoltage IC = 200 A, VGE = 15 V IC = 200 A, VGE = 15 V Gatethresholdvoltage IC = 8,00 mA, VCE = VGE, Tvj = 25C Gatecharge Tvj = 25C Tvj = 125C VCE sat A A typ. max. 2,00 2,40 2,45 V V VGEth 5,2 5,8 6,4 V VGE = -15 V ... +15 V QG 2,30 C Internalgateresistor Tvj = 25C RGint 3,8 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 18,0 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 0,60 nF - Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 3,0 mA - Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 400 nA () Turn-ondelaytime,inductiveload IC = 200 A, VCE = 900 V VGE = 15 V RGon = 6,8 Tvj = 25C Tvj = 125C td on 0,28 0,30 s s () Risetime,inductiveload IC = 200 A, VCE = 900 V VGE = 15 V RGon = 6,8 Tvj = 25C Tvj = 125C tr 0,08 0,10 s s () Turn-offdelaytime,inductiveload IC = 200 A, VCE = 900 V VGE = 15 V RGoff = 6,8 Tvj = 25C Tvj = 125C td off 0,80 1,00 s s () Falltime,inductiveload IC = 200 A, VCE = 900 V VGE = 15 V RGoff = 6,8 Tvj = 25C Tvj = 125C tf 0,12 0,20 s s () Turn-onenergylossperpulse IC = 200 A, VCE = 900 V, LS = 60 nH VGE = 15 V RGon = 6,8 Tvj = 25C Tvj = 125C Eon 58,0 78,0 mJ mJ ( Turn-offenergylossperpulse IC = 200 A, VCE = 900 V, LS = 60 nH VGE = 15 V RGoff = 6,8 Tvj = 25C Tvj = 125C Eoff 43,0 63,0 mJ mJ SCdata VGE 15 V, VCC = 1000 V VCEmax = VCES -LsCE *di/dt ISC Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,033 Temperatureunderswitchingconditions Tvj op -40 preparedby:HS dateofpublication:2013-10-03 approvedby:WR revision:2.1 1 tP 10 s, Tvj = 125C 800 A 0,10 K/W K/W 125 C /TechnicalInformation IGBT- IGBT-modules FF200R17KE3 PreliminaryData ,/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms I2t- It-value VR = 0 V, tP = 10 ms, Tvj = 125C VRRM 1700 V IF 200 A IFRM 400 A It 6600 As /CharacteristicValues min. typ. max. 1,80 1,90 2,20 Forwardvoltage IF = 200 A, VGE = 0 V IF = 200 A, VGE = 0 V Tvj = 25C Tvj = 125C VF Peakreverserecoverycurrent IF = 200 A, - diF/dt = 2700 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V IRM 210 230 A A Recoveredcharge IF = 200 A, - diF/dt = 2700 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Qr 51,0 85,0 C C Reverserecoveryenergy IF = 200 A, - diF/dt = 2700 A/s (Tvj=125C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Erec 25,0 48,0 mJ mJ Thermalresistance,junctiontocase /perdiode RthJC Thermalresistance,casetoheatsink /perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH 0,052 Temperatureunderswitchingconditions Tvj op -40 preparedby:HS dateofpublication:2013-10-03 approvedby:WR revision:2.1 2 V V 0,16 K/W K/W 125 C /TechnicalInformation IGBT- IGBT-modules FF200R17KE3 PreliminaryData /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. Materialofmodulebaseplate Internalisolation (class1,IEC61140) basicinsulation(class1,IEC61140) Creepagedistance VISOL 3,4 kV Cu Al2O3 -/terminaltoheatsink -/terminaltoterminal 29,0 23,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 23,0 11,0 mm Comperativetrackingindex CTI > 400 Thermalresistance,casetoheatsink /permodule Paste=1W/(m*K)/grease=1W/(m*K) , Strayinductancemodule ,- Moduleleadresistance,terminals-chip TC=25C,/perswitch Storagetemperature Mountingtorqueformodulmounting min. typ. RthCH 0,01 LsCE 20 nH RCC'+EE' 0,60 m Tstg -40 125 C M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,00 - 6,00 Nm Terminalconnectiontorque M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 2,5 - 5,0 Nm Weight G 340 g preparedby:HS dateofpublication:2013-10-03 approvedby:WR revision:2.1 3 max. K/W /TechnicalInformation IGBT- IGBT-modules FF200R17KE3 PreliminaryData IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT,) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=125C 400 400 Tvj = 25C Tvj = 125C 350 300 300 250 250 IC [A] IC [A] 350 200 200 150 150 100 100 50 50 0 0,0 0,5 1,0 VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE =8 V 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 IGBT,() transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=6.8,RGoff=6.8,VCE=900V 400 200 Tvj = 25C Tvj = 125C 350 Eon, Tvj = 125C Eoff, Tvj = 125C 180 160 300 140 120 E [mJ] IC [A] 250 200 100 80 150 60 100 40 50 0 20 5 6 7 8 9 VGE [V] 10 11 12 0 13 preparedby:HS dateofpublication:2013-10-03 approvedby:WR revision:2.1 4 0 50 100 150 200 IC [A] 250 300 350 400 /TechnicalInformation IGBT- IGBT-modules FF200R17KE3 PreliminaryData IGBT,) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=200A,VCE=900V IGBT, transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 400 1 Eon, Tvj = 125C Eoff, Tvj = 125C 350 ZthJC : IGBT 300 0,1 ZthJC [K/W] E [mJ] 250 200 150 0,01 100 i: 1 2 3 4 ri[K/W]: 0,01 0,03 0,04 0,02 i[s]: 0,01 0,04 0,06 0,3 50 0 0 10 20 30 40 RG [] 50 60 0,001 0,001 70 IGBT,RBSOA reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=6.8,Tvj=125C 0,01 0,1 t [s] 1 10 ,) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 450 400 IC, Modul IC, Chip 400 Tvj = 25C Tvj = 125C 350 350 300 300 250 IF [A] IC [A] 250 200 200 150 150 100 100 50 50 0 0 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] preparedby:HS dateofpublication:2013-10-03 approvedby:WR revision:2.1 5 0,0 0,5 1,0 1,5 2,0 VF [V] 2,5 3,0 3,5 4,0 /TechnicalInformation IGBT- IGBT-modules FF200R17KE3 PreliminaryData ,) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=6.8,VCE=900V ,) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=200A,VCE=900V 100 60 Erec, Tvj = 125C Erec, Tvj = 125C 55 90 50 80 45 70 40 35 E [mJ] E [mJ] 60 50 30 25 40 20 30 15 20 10 10 0 5 0 50 100 150 200 IF [A] 250 300 350 0 400 , transientthermalimpedanceDiode,Inverter ZthJC=f(t) 1 ZthJC : Diode ZthJC [K/W] 0,1 0,01 i: 1 2 3 4 ri[K/W]: 0,016 0,048 0,064 0,032 i[s]: 0,01 0,04 0,06 0,3 0,001 0,001 0,01 0,1 t [s] 1 10 preparedby:HS dateofpublication:2013-10-03 approvedby:WR revision:2.1 6 0 10 20 30 40 RG [] 50 60 70 /TechnicalInformation IGBT- IGBT-modules FF200R17KE3 PreliminaryData /circuit_diagram_headline /packageoutlines j j n n i i preparedby:HS dateofpublication:2013-10-03 approvedby:WR revision:2.1 7 /TechnicalInformation IGBT- IGBT-modules FF200R17KE3 PreliminaryData www.infineon.com - - - Terms&Conditionsofusage Thedatacontainedinthisproductdatasheetisexclusivelyintendedfortechnicallytrainedstaff.Youandyourtechnicaldepartmentswill havetoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductdatawithrespecttosuch application. 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