IN ORDER OF: {1}CATEGORY,(2)TYPE NO. 15. MISCELLANOUS TRANSISTORS T[CATEGORY | M[DWG #]L C LINE TYPE U/STRUC- AlY200 EO DESCRIPTION No No. S| TURE T | s/a AD E T0200 |DE Ser. T# [uUPA3S7A* 6 |N-E St [RT3ih |PO |Dual Trans for Hi Speed Lo Level Diff Ampl: 400MHz Typ 2# |uPA3B8A* 6 |NEG Si |TO78 QS |Dual Trans for Lo Noise Lo Level Diff Ampt;NF 1.0dB typ at 1.0kHz,Vce 5.0V,Ic 10UA 3# [uUPASSA* 6 [INES Si |TO78 QS |Dual Trans for Lo Noise Lo Level Diff Ampl;NF 2.0dB typ at 1.0kHz,Vce 5.0V,Ilc 10uA 4# [uPA49A* 6 IPS Si [TO78 Qs |Oual Trans for to Level Diff Ampl:;hFE1/hFE2 .80 min,1.25 max at Vce 1.0Vlc 1.0mA U231* 6(N Si |R120 IG(1-2)10nA max;VCS(1-2)5.0mV max;AVGS(1-2)/AT 10uVv/C. 6 Y232* 6|N Si_ {R120 (G(1-2)10nA_maxVGS(1-2)10mV_max;AVGS(1-2)/AT 25uV/C. oo 7 U233* 6 IN Si [R120 1G(1-2)TONA max;VGS8(1-2)15mV max;AVGS(1-2)/AT 50uV/C. & U234* 6(N Si [R120 tG(1-2)10nA max;VGS(1-2)20mV max;AVGS{1-2)/AT 75uV/C. 9 |u235* 6 |N si_|R120 IG(1-2)10nA_max:VGS(1-2)25mV_max:AVGS(1-2)/AT 100uV/C. _. 10 U257* 6IN Si [TOSS PF IIDSS1/2 1.0 max:gfs1/2 1.0 max;goss(1-2) 20umho max;VGS(1-2) TOOmV max. 1 U401 6IN Si |TO71 Pl |BVG(1-2 BOV:AVGS(1-2)/AT 10uV/C;VGS(1-2) 5mV.JFET 12. |u402 6|N Si_{TO71 PJ |BVG(1-2)50V;AVGS(1-2)/AT 10uV/C;VGS(1-2) 10mVJFET ee 13 U403 6 iN Si [TO7T Pl [BVG(1-2)50V:;AVGS(1-2)/AT 25uV/C;VGS(1-2) 1OmV;JFET 14 404 6\N $i }T071 PJ |BYVG(1-2)50V;AVGS(1-2)/AT 25uV/C;VGS(1-2) 15mV;JFET 15 U405 6\N Si_|TO71 Pl IBVG(1-2)50V;AVGS(1-2)/AT 40uV/C;VGS(1-2}) 20mVJFET Oe 76 [W406 6[N Si [TO71 Pl [BVG(1-2)50V;AVGS(1-2)/AT 80uV/C;VGS(1-2) 40mV:JFET 7 U421 6 |N* Si {TOSS PF |CMMR95dB TYP;VGS(1-2)10mVmax;VGS(1-2)/AT 10uV/C max:JFET 18 U422 6 IN* Si |TO99 PF_ ICMMR 90dB_Typ;VGS(1-2)15mV;VGS(1-2)/AT 25uV/C max;JFET _ ee 19 0423 6 [N* Si [TO99 PF |CMMRQOdB TYP;VGS(1-2)25mVmax;VGS(1-2)/AT 40uV/C max;JFET 20 U424 6 |N* Si {/TO99 PF jCMMR95dB TYP:VGS(1-2)10mVmax;VGS(1-2)/AT 10uV/C max;JFET 21 U425 6 IN* Si |TO99 PF_|CMMR90dB _ TYP;VGS(1-2)15mVmax;VGS(1-2)/AT 25uV/C max:JFET ae _ 22 U426 6 |N* Si [TO99 PF |CMMRSOdB TYP;VGS(1-2)25mVmax;VGS(1-2)7AT 40uV/C max;JFET 23 U430* 6IN Si |TO99 QV |Matched Dual;IDSS 1/2 10% max;Vp 1/2 10% max;gfs1/2 10% max;VG(1-2)200mV max. 24 U431* 6 IN Si |TO99 QV_|Matched Dual;IDSS 1/2 10% max:Vp 1/2 10% max.gfs1/2 10% max;VG(1-2)200mV_max. 25 UCXK29 10* 6 /NA@ si [TO78 Pr. 75W;AFE1/2-.90 min;VBE(1-2)-1mV;tr-20ns:tf-20ns. 26# |ZDT40 6 | N-PL Si |TO78 PL-50O0mW(both sides);Pair of ZT 82. 27# |ZDT41t 6 [N-PL si |t078 PL-500mW(both sides);Pair of ZT 84. oo 28# [ZDT42 6 [N-PL Si [TO78 PL-500mWiboth sides); VBE(1-2)-5mV max:hFET/hFE2-1.0 max. 29# |ZDT44 6 |N-PL Si |TO78 PL-500mWiboth sides);VBE(1-2)-10mV max;hFE1/hFE2-1.0 max. 30# |ZDT45 6 |N-PL Si [TO78 PL-500mWiboth sides); VBE(1-2)-10mV_ max:hFE 1/hFE2-1.0 max. _ _ 31 2N489 9|P Si |R33 Cc Pt 450mWin 62 max;RBB 6.8k max:iv 8B.OmA minjip 12uA max;IB 2(MOD) 22mA max. 32 2N489A g|P Si |R33 cc j|Pt .45W max;RBBO 6.8k9 max;n .62 max;lp 12uA max:tv 8.0mA min. . 33 JANZN489A 9 IP Si_|R33 CA_|Pt .6OW:;VB2E 60V:RBB 6.8kQ max;n .62 maxip 12uA max. 34 2N489B 9/P Si [R33 CC Pt 450mWin .62 max;RBBO 6.8kf max;lp 6.0uA max;lv 8.OmA min. 35 2N490 9 ]P Si [R33 CC [Pt 450mW:n .62 max;RBB 9.1k2 max;lv 8.OmA minjip 12uA max;IB 2(MOD) 22mA max. 36 2N490A 9 |P Si_ {R33 CC jPt .45W maxRBBO 9.1kQ max:n .62 max;lp 12uA maxjiv 8.0mA min. _ a 37 JAN2N490A g|P Si [R33 CA ]Pt 6OW;VB2E 6OV:RBB 9.1kN max;n 62 max:lp 12uA max. 38 2N490B 9|P Si |R33 Cc {Pt 450mWin .62 max;RBBO 9.1kQ max;lp 6.0uA max;lv 8.0mA min. 39 2N490C gle Si_ |R33 cc [Pt 45WiRBB 9.1kohmsin 51 min: VEB(sat} 4.0V max. 40 J2N491 g|P Si [R33 CC [Pt 450mW:n .68 max;RBB 6.8k2 max;lv 8.OmA miniip T2uA maxiB 2(MOD) 22mA max. 41 2N491A Q9|P Si |R33 CC [Pt .45W max:;RBBO 6.8k9 max;n .68 max:lIp 12uA max;lv 8.0mA min. 42 |JAN2N491A Qg|P Si_|R33 CA |Pt 6OW;VB2E 6OV;RBB 6.8kQ maxin .68 maxjiIp 12uA max. 43 2N491B g9/P Si [R33 CC [Pt 450mW:n 68 max;RBBO 6.8k maxip 6.0uA maxiv 8