1
BFS17LT1MOTOROLA RF DEVICE DATA
The RF Line
Designed primarily for use in high–gain, low–noise amplifier, oscillator and
mixer applications. Packaged for thick or thin film circuits using surface mount
components.
•T1 suffix indicates tape and reel packaging of 3,000 units per reel.
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector–Emitter Voltage VCEO 15 Vdc
Collector–Base Voltage VCBO 25 Vdc
Maximum Junction Temperature TJmax 150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C (1) PD350
2.8 mW
mW/°C
Storage Temperature Tstg –55 to +150 °C
Thermal Resistance Junction to Ambient (1) RθJA 357 °C/W
DEVICE MARKING
BFS17LT1 = E1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = 10 mA) V(BR)CEO 15 — — Vdc
Collector–Base Breakdown Voltage (IC = 100 µA) V(BR)CBO 25 — — Vdc
Collector Cutoff Current (VCE = 10 V) ICEO — — 25 nA
Collector Cutoff Current (VCB = 10 V) ICBO — — 25 nA
Emitter Cutoff Current (VEB = 4 V) IEBO — — 100 µA
ON CHARACTERISTICS
DC Current Gain
(IC = 2 mA, VCE = 1 V)
(IC = 25 mA, VCE = 1 V)
hFE 20
20 —
—150
—
—
Collector–Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA) VCE(sat) — — 0.4 V
Base–Emitter Saturation Voltage
(IC = 10 mA, IB = 1 mA) VBE(sat) — — 1 V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 2 mA, VCE = 5 V, f = 500 MHz)
(IC = 25 mA, VCE = 5 V, f = 500 MHz)
fT—
—1
1.3 —
—
GHz
Output Capacitance (VCB = 10 V, f = 1 MHz) CCB — 1 — pF
Noise Figure (IC = 2 mA, VCE = 5 V, RS = 50 Ω, f = 30 MHz) NF — 5 — dB
NOTE:
1. Package mounted on 99.5% alumina 10 x 8 x 0.6 mm.