2SJ218
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage V(BR)DSS –60 — — V ID = –10 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20——V I
G
= ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS — — –250 µA VDS = –50 V, VGS = 0
Gate to source cutoff voltage VGS(off) –1.0 — –2.0 V ID = –1 mA, VDS = –10 V
Static drain to source on state
resistance RDS(on) — 0.033 0.042 ΩID = –20 A, VGS = –10 V*1
— 0.045 0.06 ID = –20 A, VGS = –4 V*1
Forward transfer admittance |yfs|1625—S I
D
= –20 A, VDS = –10 V*1
Input capacitance Ciss — 3800 — pF VDS = –10 V, VGS = 0,
f = 1 MHz
Output capacitance Coss — 2000 — pF
Reverse transfer capacitance Crss — 490 — pF
Turn-on delay time td(on) —30—nsI
D
= –20 A, VGS = –10 V,
RL = 1.5 Ω
Rise time tr— 235 — ns
Turn-off delay time td(off) — 670 — ns
Fall time tf— 450 — ns
Body to drain diode forward
voltage VDF — –1.35 — V IF = –45 A, VGS = 0
Body to drain diode reverse
recovery time trr — 300 — ns IF = –45 A, VGS = 0,
diF/dt = 50 A/µs
Note 1. Pulse test
See characteristic curves of 2SJ217