Si9934BDY Vishay Siliconix Dual P-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) () ID (A) 0.035 at VGS = - 4.5 V - 6.4 0.056 at VGS = - 2.5 V - 5.1 * Halogen-free According to IEC 61249-2-21 Definition * TrenchFET(R) Power MOSFET * Compliant to RoHS Directive 2002/95/EC S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View Ordering Information: Si9934BDY-T1-E3 (Lead (Pb)-free) Si9934BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D1 D2 P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150 C)a TA = 25 C TA = 70 C Continuous Source Current (Diode Conduction)a IS TA = 25 C TA = 70 C PD - 4.8 - 5.1 - 3.9 - 20 - 1.7 - 0.9 2.0 1.1 1.3 0.7 TJ, Tstg Operating Junction and Storage Temperature Range V - 6.4 IDM Pulsed Drain Current Maximum Power Dissipationa ID Unit - 55 to 150 A W C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t 10 s Steady State Steady State RthJA RthJF Typical Maximum 55 62.5 90 110 33 40 Unit C/W Notes: a. Surface Mounted on 1" x 1" FR4 board. Document Number: 72525 S09-0704-Rev. D, 27-Apr-09 www.vishay.com 1 Si9934BDY Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. - 0.6 Typ. Max. Unit Static VGS(th) VDS = VGS, ID = - 250 A Gate-Body Leakage IGSS VDS = 0 V, VGS = 8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Gate Threshold Voltage Drain-Source On-State Resistancea Diode Forward Voltage a V nA VDS = - 12 V, VGS = 0 V -1 VDS = - 12 V, VGS = 0 V, TJ = 55 C -5 VDS = - 5 V, VGS = - 4.5 V RDS(on) Forward Transconductancea - 1.4 100 A - 20 A VGS = - 4.5 V, ID = - 6.4 A 0.028 0.035 VGS = - 2.5 V, ID = - 1.8 A 0.044 0.056 gfs VDS = - 10 V, ID = - 6.4 A 17 VSD IS = - 1.7 A, VGS = 0 V - 0.8 - 1.2 13 20 S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 4.0 Gate Resistance Rg 9 VDS = 6 V, VGS = - 4.5 V, ID = - 6.4 A td(on) Turn-On Delay Time 19 tr Rise Time td(off) Turn-Off Delay Time Fall Time tf Source-Drain Reverse Recovery Time trr nC 2.6 30 VDD = 6 V, RL = 6 ID - 1 A, VGEN = - 4.5 V, Rg = 6 35 55 80 120 50 75 IF = - 1.7 A, dI/dt = 100 A/s 40 80 ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 20 20 VGS = 5 thru 3 V 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 12 8 2V 4 12 8 TC = 125 C 4 25 C 1.5 V - 55 C 0 0 1 2 3 4 VDS - Drain-to-Source Voltage (V) Output Characteristics www.vishay.com 2 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS - Gate-to-Source Voltage (V) Transfer Characteristics Document Number: 72525 S09-0704-Rev. D, 27-Apr-09 Si9934BDY Vishay Siliconix 25 C, unless otherwise noted 0.10 2000 0.08 1600 C - Capacitance (pF) R DS(on) - On-Resistance () TYPICAL CHARACTERISTICS 0.06 VGS = 2.5 V 0.04 VGS = 4.5 V Ciss 1200 800 Coss 400 0.02 Crss 0 0.00 0 4 8 12 16 0 20 2 4 8 10 12 VDS - Drain-to-Source Voltage (V) ID - Drain Current (A) On-Resistance vs. Drain Current Capacitance 1.4 5 VDS = 6 V ID = 6.4 A VGS = 4.5 V ID = 6.4 A 1.3 4 R DS(on) - On-Resistance (Normalized) V GS - Gate-to-Source Voltage (V) 6 3 2 1.2 1.1 1.0 0.9 0.8 1 0.7 0.6 - 50 0 0 3 6 9 12 15 - 25 0 25 50 75 100 125 150 TJ - Junction Temperature (C) Qg - Total Gate Charge (nC) Gate Charge On-Resistance vs. Junction Temperature 0.10 20 R DS(on) - On-Resistance () I S - Source Current (A) TJ = 150 C 10 TJ = 25 C 1 0.0 0.08 ID = 1.8 A 0.06 ID = 6.4 A 0.04 0.02 0.00 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage Document Number: 72525 S09-0704-Rev. D, 27-Apr-09 1.4 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage www.vishay.com 3 Si9934BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 0.4 30 25 ID = 150 A 0.2 20 Power (W) V GS(th) Variance (V) 0.3 0.1 15 0.0 10 - 0.1 5 - 0.2 - 50 - 25 0 25 50 75 100 125 0 10- 3 150 10- 2 10- 1 1 10 TJ - Temperature (C) Time (s) Threshold Voltage Single Pulse Power 100 600 100 Limited by RDS(on)* IDM Limited I D - Drain Current (A) 10 P(t) = 0.001 P(t) = 0.01 1 ID(on) Limited P(t) = 0.1 P(t) = 1 P(t) = 10 dc TA = 25 C Single Pulse 0.1 BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified Safe Operating Area, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = R thJA = 90 C/W 0.02 3. T JM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 72525 S09-0704-Rev. D, 27-Apr-09 Si9934BDY Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72525. Document Number: 72525 S09-0704-Rev. 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