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BYW51/F/G/FP/R-200
®
August 2002 - Ed: 3E
HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
TO-220AB
BYW51-200
■SUITED FOR SMPS
■VERY LOW FORWARD LOSSES
■NEGLIGIBLE SWITCHING LOSSES
■HIGH SURGE CURRENT CAPABILITY
■INSULATED PACKAGES (ISOWATT220AB /
TO-220FP) :
Insulation voltage = 2000 V DC
Capacitance = 12 pF
FEATURES AND BENEFITS
Dual center tap rectifier suited for Switched Mode
Power Supplies and high frequency DC to DC
converters.
Packaged in TO-220AB, ISOWATT220AB,
TO-220FP, D2PAK or I2PAK, this device is
intended for use in low voltage, high frequency
inverters, free wheeling and polarity protection
applications.
DESCRIPTION
ISOWATT220AB
BYW51F-200
Symbol Parameter Value Unit
VRRM Repetitive peak reverse voltage 200 V
IF(RMS) RMS forward current 20 A
IF(AV) Average forward current
δ= 0.5 TO-220AB / D2PAK
I2PAK Tc=120°C Per diode 10 A
Per device 20
ISOWATT220AB Tc=95°C Per diode 10
Per device 20
TO-220FPAB Tc=85°C Per diode 10
Per device 20
IFSM Surge non repetitive forward current tp=10ms sinusoidal 100 A
Tstg Storage temperature range - 65 to + 150 °C
Tj Maximum operating junction temperature 150 °C
ABSOLUTE RATINGS (limiting values, per diode)
A1 A2
K
A1 KA2
A1
K
A2
IF(AV) 2x10A
V
RRM 200 V
Tj (max) 150 °C
VF(max) 0.85 V
trr (max) 25 ns
MAIN PRODUCT CHARACTERISTICS
D2PAK
BYW51G-200
K
A2
A1
A1
A2
K
TO-220FPAB
BYW51FP-200
A1
A2
K
I2PAK
BYW51R-200
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Symbol Parameter Test Conditions Min. Typ. Max. Unit
IR*Reverse leakage current Tj= 25°C VR=V
RRM 15 µA
Tj= 100°C 1mA
V
F** Forward voltage drop Tj= 125°C IF=8A 0.85 V
Tj= 125°CI
F
=16A 1.05
Tj=25°CI
F
=16A 1.15
Pulse test :* tp=5ms,δ<2%
** tp = 380 µs, δ<2%
To evaluate the conduction losses use the following equation :
P=0.65xI
F(AV) + 0.025 x IF2(RMS)
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Symbol Test Conditions Typ. Max. Unit
trr Tj= 25°C IF= 0.5A
IR=1A Irr = 0.25A 25 ns
IF=1A
V
R= 30V dIF/dt = -50A/µs35
tfr Tj= 25°C IF=1A
V
FR =1.1xV
Fmax dIF/dt = -50A/µs15 ns
V
FP Tj= 25°C IF=1A dI
F
/dt = -50A/µs2 V
RECOVERY CHARACTERISTICS
Symbol Parameter Value Unit
Rth (j-c) Junction to case TO-220AB / D2PAK/I
2
PAK Per diode 2.5 °C/W
Total 1.4
ISOWATT220AB Per diode 5.1
Total 4.05
TO-220FPAB Per diode 5.7
Total 4.6
Rth (c) Coupling TO-220AB / D2PAK/I
2
PAK 0.25 °C/W
ISOWATT220AB 3.0
TO-220FPAB 3.5
When diodes 1 and 2 are used simultaneously :
∆Tc (diode 1) = P(diode 1) x Rth(j-c) (Per diode) + P(diode 2) x Rth(c)
THERMAL RESISTANCES
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0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
0
20
40
60
80
100
120 IM(A)
P=5W
P=15W
P=10W
δ
T
δ=tp/T tp
Fig.2:Peakcurrentversusformfactor(perdiode).
0 25 50 75 100 125 150
0
2
4
6
8
10
12
Tamb(°C)
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
T
δ=tp/T tp
Fig. 3-1: Average forward current versus ambient
temperature (δ= 0.5, D2PAK, TO-220AB).
1E-3 1E-2 1E-1 1E+0
0
10
20
30
40
50
60
70
80
90
100
t(s)
IM(A)
Tc=25°C
Tc=100°C
Tc=75°C
IM
t
δ=0.5
Fig. 4-1: Nonrepetitivesurgepeak forward current
versus overload duration (D2PAK, TO-220AB)
0 1 2 3 4 5 6 7 8 9 10 11 12 13
0
2
4
6
8
10
12
14
IF(a v ) (A )
PF(av)(W)
δ= 0.05 δ= 0.1 δ= 0.2 δ= 0.5
δ= 1
T
δ=tp/T tp
Fig. 1: Average forward power dissipation versus
average forward current (per diode).
1E-3 1E-2 1E-1 1E+0
0
10
20
30
40
50
60
70
80
t(s)
IM(A)
Tc=25°C
Tc=100°C
Tc=75°C
IM
t
δ=0.5
Fig. 4-2: Nonrepetitivesurgepeak forward current
versus overload duration (ISOWATT220AB).
0 25 50 75 100 125 150
0
2
4
6
8
10
12
Tamb(°C)
IF(av)(A)
Rth(j-a)=15°C/W
Rth(j-a)=Rth(j-c)
ISOWATT220AB
TO-220FP
T
δ=tp/T tp
Fig. 3-2: Average forward current versus
ambient temperature (δ= 0.5, ISOWATT220AB,
TO-220FPAB).
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1E-3 1E-2 1E-1 1E+0
0.1
1.0
t(s)
K=[Zth(j-c)/Rth(j-c)]
δ= 0.5
δ= 0.2
δ= 0.1
Single pulse T
δ=tp/T tp
Fig. 5-1: Relative variation of thermal impedance
junction to case versus pulse duration (D2PAK,
TO-220AB).
1E-2 1E-1 1E+0 1E+1
0.1
1.0
t(s)
K=[Zth(j-c)/Rth(j-c)]
δ= 0.5
δ= 0.2
δ= 0.1
Single pulse T
δ=tp/T tp
Fig. 5-2: Relative variation of thermal impedance
junction to case versus pulse duration
(ISOWATT220AB, TO-220FPAB).
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
0.1
1.0
10.0
100.0
VFM(V)
IFM(A)
Tj=125°C
Tj=25°C
Fig. 6: Forward voltage drop versus forward
current (maximum values, per diode).
1 10 100 200
10
20
50
100
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 7: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1E-3 1E-2 1E-1 1E+0
0
10
20
30
40
50
60
70
80
t(s)
IM(A)
Tc=25°C
Tc=100°C
Tc=75°C
IM
t
δ=0.5
Fig. 4-3: Nonrepetitivesurgepeak forward current
versus overload duration (TO-220FPAB).
10 20 50 100 200 500
10
20
50
100
200
500
dIF/dt(A/µs)
Qrr(nC)
IF=IF(av)
90% confidence
Tj=125°C
Fig. 8: Reverse recovery charges versus dIF/dt
(per diode).
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10 20 50 100 200 500
1
10
50
dIF/dt(A/µs)
IRM(A)
IF=IF(av)
90% confidence
Tj=125°C
Fig.9: Peakreverserecoverycurrent versus dIF/dt
(per diode).
0 25 50 75 100 125 150
0.25
0.50
0.75
1.00
1.25
Tj(°C)
Qrr;IRM [Tj] / Qrr;IRM [Tj=125°C ]
IRM
Qrr
Fig. 10: Dynamic parameters versus junction
temperature.
0 5 10 15 20 25 30 35 40
0
10
20
30
40
50
60
70
80
S(Cu ) (c m²)
Rth(j-a) (°C/W)
Fig. 11: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board FR4, copper thickness: 35µm)
(D2PAK) .
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PACKAGE MECHANICAL DATA
TO-220AB (JEDEC compatible)
M
H2
L2
A
C
L4
F1(x2)
D
F2
F
G
L9
L6
L7
L5
G1 E
Dia
OPTIONAL
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.30 4.60 0.169 0.181
C 1.22 1.32 0.048 0.052
D 2.40 2.72 0.094 0.107
E 0.33 0.70 0.013 0.028
F 0.61 0.93 0.024 0.037
F1 1.14 1.70 0.045 0.067
F2 1.14 1.70 0.045 0.067
G 4.95 5.15 0.195 0.202
G1 2.40 2.70 0.094 0.106
H2 10.00 10.40 0.394 0.409
L2 16.00 Typ. 0.630 Typ.
L4 13.00 14.00 0.512 0.551
L5 2.65 2.95 0.104 0.116
L6 14.80 15.75 0.583 0.620
L7 6.20 6.60 0.244 0.260
L9 3.40 3.94 0.134 0.155
M 2.60 Typ. 0.102 Typ.
Dia. 3.75 3.89 0.148 0.153
PACKAGE MECHANICAL DATA
I2PAK
e
D
L
L1
L2
b1
b
b2
E
A
c2
A1
c
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037
b1 1.14 1.17 0.044 0.046
b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535
L1 3.48 3.78 0.137 0.149
L2 1.27 1.40 0.050 0.055
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PACKAGE MECHANICAL DATA
D2PAK
A
C2
D
R
A2
MV2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESS THAN 2mm
FOOT PRINT (in millimeters)
D2PAK
8.90 3.70
1.30
5.08
16.90
10.30
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2 0° 8° 0° 8°
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PACKAGE MECHANICAL DATA
TO-220FPAB
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.4 4.6 0.173 0.181
B 2.5 2.7 0.098 0.106
D 2.5 2.75 0.098 0.108
E 0.45 0.70 0.018 0.027
F 0.75 1 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.4 2.7 0.094 0.106
H 10 10.4 0.393 0.409
L2 16 Typ. 0.63 Typ.
L3 28.6 30.6 1.126 1.205
L4 9.8 10.6 0.386 0.417
L5 2.9 3.6 0.114 0.142
L6 15.9 16.4 0.626 0.646
L7 9.00 9.30 0.354 0.366
Dia. 3.00 3.20 0.118 0.126
H
L3
L2
L4
L6
G
G1 F
F1
L5
D
E
L7
A
B
Dia
F2
PACKAGE MECHANICAL DATA
ISOWATT220AB (JEDEC compatible)
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106
D 2.50 2.75 0.098 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.40 2.70 0.094 0.106
H 10.00 10.40 0.394 0.409
L2 16.00 typ. 0.630 typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
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BYW51/F/G/FP/R-200
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useof such information norfor any infringement of patentsor other rights ofthird parties which mayresultfrom its use. Nolicense is granted by
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change without notice. This publication supersedes and replaces all information previously supplied.
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proval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics
© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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Ordering code Marking Package Weight Base qty Delivery mode
BYW51-200 BYW51-200 TO220AB 2.2 g. 50 Tube
BYW51F-200 BYW51F-200 ISOWATT220AB 2.08 g. 50 Tube
BYW51G-200 BYW51G-200 D2PAK 1.48 g. 50 Tube
BYW51FP-200 BYW51FP-200 TO-220FPAB 2g 50 Tube
BYW51R-200 BYW51R-200 I2PAK 1.49 g 50 Tube
■Recommended torque value (TO-220AB): 0.8 N.m.
■Maximum torque value (TO-220AB): 1.0 N.m.
■Recommended torque value (ISOWATT220AB / TO-220FPAB): 0.55 N.m.
■Maximum torque value (ISOWATT220AB / TO-220FPAB): 0.70 N.m.
■Epoxy meets UL94,V0
