BZB784-C2V4,115 - NXP Semiconductors / Philips Semiconductors

DATA SH EET

Product data sheet

Supersedes data of 2000 May 24 2001 Feb 27

DISCRETE SEMICONDUCTORS

BZB784 series

Voltage regulator double diodes

ook, halfpage

M3D102

2001 Feb 27 2

NXP Semiconductors Product data sheet

Voltage regulator double diodes BZB784 series

FEATURES

•Total power dissipation: max. 350 mW

•Approx. 5% VZ tolerance

•Working voltage range: nom. 2.4 to 15 V (E24 range).

APPLICATIONS

•General regulation functions

•ESD and surge protection.

DESCRIPTION

Low-power voltage regulator diodes in a small SOT323

(SC-70) package.

PINNING SOT323 (SC-70)

PIN DESCRIPTION

1cathode

2cathode

3common anode

handbook, halfpage

Top view

MAM407

Fig.1 Simplified outline an d sy mbol.

MARKING

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Device mounted o n an FR4 printed-circuit board.

TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE TYPE

NUMBER MARKING

CODE

BZB784-C2V4 91 BZB784-C3V9 96 BZB784-C6V2 9B BZB784-C10 9G

BZB784-C2V7 92 BZB784-C4V3 97 BZB784-C6V8 9C BZB784-C11 9H

BZB784-C3V0 93 BZB784-C4V7 98 BZB784-C7V5 9D BZB784-C12 9J

BZB784-C3V3 94 BZB784-C5V1 99 BZB784-C8V2 9E BZB784-C13 9K

BZB784-C3V6 95 BZB784-C5V6 9A BZB784-C9V1 9F BZB784-C15 9L

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

IFcontinuous forward current −200 mA

IZSM non-repetitive peak reverse current tp = 100 μs; square wave;

Tamb = 25 °C; prior to surge see Table 1

Ptot total power dissipation; note 1 Tamb = 25 °C; 2 diodes loaded −350 mW

Tamb = 25 °C; 1 diode loaded −180 mW

PZSM non-repe titiv e pe ak reverse

dissipation tp = 100 μs; square wave;

Tamb = 25 °C; prior to surge −40 W

Tstg storage temperature −65 +150 °C

Tjjunction temperature −150 °C

2001 Feb 27 3

NXP Semiconductors Pr oduct data sheet

Voltage regulator double diodes BZB784 series

THERMAL CHARACTE RISTICS

Notes

1. Solder po ints on cathode tabs.

2. Device mounted on a FR 4 printed-circuit boar d.

ELECTRICAL CHARACTERISTIC S

Total BZB784-C series

Tj = 25 °C; unless otherwise spec ifie d.

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-s thermal resistance from junction to soldering point 2 diodes loaded; note 1 140 K/W

1 diode loaded; note 1 265 K/W

Rth j-a thermal resistance from junction to ambient 2 diodes loaded; note 2 355 K/W

1 diode loaded; note 2 680 K/W

SYMBOL PARAMETER CONDITIONS MAX. UNIT

VFforward voltage IF = 10 mA; see Fig.2 0.9 V

IRreverse current

BZB784-C2V4 VR = 1 V 50 μA

BZB784-C2V7 VR = 1 V 20 μA

BZB784-C3V0 VR = 1 V 10 μA

BZB784-C3V3 VR = 1 V 5 μA

BZB784-C3V6 VR = 1 V 5 μA

BZB784-C3V9 VR = 1 V 3 μA

BZB784-C4V3 VR = 1 V 3 μA

BZB784-C4V7 VR = 2 V 3 μA

BZB784-C5V1 VR = 2 V 2 μA

BZB784-C5V6 VR = 2 V 1 μA

BZB784-C6V2 VR = 4 V 3 μA

BZB784-C6V8 VR = 4 V 2 μA

BZB784-C7V5 VR = 5 V 1 μA

BZB784-C8V2 VR = 5 V 700 nA

BZB784-C9V1 VR = 6 V 500 nA

BZB784-C10 VR = 7 V 200 nA

BZB784-C11 VR = 8 V 100 nA

BZB784-C12 VR = 8 V 100 nA

BZB784-C13 VR = 8 V 100 nA

BZB784-C15 VR = 10.5V 50 nA

2001 Feb 27 4

NXP Semiconductors Product data sheet

Voltage regulator double diodes BZB784 series

Table 1 Per type BZ B784-C2V4 to C15

Tj = 25 °C; unless otherwise specified.

BZB784-C

XXX

WORKING

VOLTAGE

VZ (V)

at IZ = 5 mA

DIFFERENTIAL RESISTANCE

rdif (Ω)

TEMP.

COEFFICIENT

SZ (mV/K)

at IZtest = 5 mA

(see Figs 3 and 4)

DIODE CAP.

Cd (pF)

at f = 1 MHz;

VR = 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

IZSM (A) at tp = 100 μs;

Tamb = 25 °C

Tol. ≈5% at IZ = 1 mA at IZ = 5 mA

MIN. MAX. TYP. MAX. TYP. MAX. TYP. MAX. MAX.

2V4 2.2 2.6 275 600 70 100 −1.3 450 6.0

2V7 2.5 2.9 300 600 75 100 −1.4 450 6.0

3V0 2.8 3.2 325 600 80 95 −1.6 450 6.0

3V3 3.1 3.5 350 600 85 95 −1.8 450 6.0

3V6 3.4 3.8 375 600 85 90 −1.9 450 6.0

3V9 3.7 4.1 400 600 85 90 −1.9 450 6.0

4V3 4.0 4.6 410 600 80 90 −1.7 450 6.0

4V7 4.4 5.0 425 500 50 80 −1.2 300 6.0

5V1 4.8 5.4 400 480 40 60 −0.5 300 6.0

5V6 5.2 6.0 80 400 15 40 1.0 300 6.0

6V2 5.8 6.6 40 150 610 2.2 200 6.0

6V8 6.4 7.2 30 80 615 3.0 200 6.0

7V5 7.0 7.9 30 80 615 3.6 150 4.0

8V2 7.7 8.7 40 80 615 4.3 150 4.0

9V1 8.5 9.6 40 100 615 5.2 150 3.0

10 9.4 10.6 50 150 820 6.0 90 3.0

11 10.4 11.6 50 150 10 20 6.9 90 2.5

12 11.4 12.7 50 150 10 25 7.9 85 2.5

13 12.4 14.1 50 170 10 30 8.8 80 2.5

15 13.8 15.6 50 200 10 30 10.7 75 2.0

2001 Feb 27 5

NXP Semiconductors Pr oduct data sheet

Voltage regulator double diodes BZB784 series

GRAPHICAL DATA

handbook, halfpage

0.6 0.7 0.8 1

VF (V)

(mA)

300

100

200

0.9

MLD362

Fig.2 Forward current as a function of forward

voltage; typical values.

Tj = 25 °C.

handbook, halfpage

0.5

−2

−1

MLD363

1IZ (mA)

(mV/K)

−1.5

−1

−0.5

2V4

4V7

4V3

3V9

3V6

3V3

3V0

2V7

Fig.3 Temperature coefficient as a funct ion of

working current; typical values.

BZB784-C2V4 to C4V7.

Tj = 25 to 150 °C.

handbook, halfpage

−4

MLD364

10−1110

IZ (mA)

(mV/K)

102

9V1

5V6

5V1

8V2

7V5

6V8

6V2

Fig.4 Temperature coefficient as a funct ion of

working current; typical values.

BZB784-C5V1 to C15.

Tj = 25 to 150 °C.

2001 Feb 27 6

NXP Semiconductors Pr oduct data sheet

Voltage regulator double diodes BZB784 series

PACKAGE OUTLINE

UNIT A1

max bpcD Ee1HELpQwv

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10 2.2

1.8 1.35

1.15 0.65

1.3 2.2

2.0 0.23

0.13 0.20.2

DIMENSIONS (mm are the original dimensions)

0.45

0.15

SOT323 SC-70

detail X

vMA

0 1 2 mm

scale

Plastic surface mounted package; 3 leads SOT32

97-02-28

2001 Feb 27 7

NXP Semiconductors Pr oduct data sheet

Voltage regulator double diodes BZB784 series

DATA SHEET STATUS

Notes

1. Please consult the most recently issued document before initiating or completing a design.

2. The product s ta tus of device(s ) described in this do cument may have ch anged since this document was published

and may differ in case of multiple devices. The latest product status information is available on the Internet at

URL http://www.nxp.com.

DOCUMENT

STATUS(1) PRODUCT

STATUS(2) DEFINITION

Objective data sheet Development This document contains data from the objective specification for pro duct

development.

Preliminary data sheet Qualification This document contains data from the preliminary specification.

Product data sheet Production T his document contains the produc t specification.

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values (as defined in the Absolute Maximum Ratings

System of IEC 60134) may cause permanent damage to

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Printed in The Netherlands 613514/02/pp8 Date of release: 2001 Feb 27 Document order number: 9397 750 08112