~ SEMIKRON INC SLE D MM 8136671 0003874 185 BSEKG SEMIKRON Vas Irav (sin. 180; Tcase = 85 C) | VRRM Vv 500 A 720A 1110A 400 - SKN 501/04 SKN 870/04 800 - SKN 501/08 - 1200 - SKN 501/12 SKN 870/12 1400 - SKN 501/14 - 1600 - SKN 501/16 SKN 870/16 1800 SKN 450/18 - - 2000 SKN 450/20 - - 2200 SKN 450/22 - ~ 2400 SKN 450/24 - SKN 870/24 2500 SKN 450/25 - - 3000 - - SKN 870/30 Symbol] Conditions SKN 450 SKN 501 SKN 870 IFAV sin. 180; DSC; (Toase=--.) | 450A (95C) |500 A (125 C)| 870 A (105C) IFSM Ty = 25C; 10 ms 6 000A 7Q00A 13 000A Tyj max. ; 10 ms 5 000A 6 000A 10 500A t Ty= 25C; 8,3...10ms 180 000 As 245 000 A?s 850 000 As Ty max. ; 2 2 2 8,3...10ms 125 000 A*s 180 000 As 550 000 As Qu 100K 700 pC 600 LC 2000 pC dir.) A IRM oH 1006 60A 30A 100A typ. IR Ty= 25C; Vr = Varm 2mA 2mA 4mA Ty max ; | Vr = VarM 20 mA 50 mA 40 mA iVe |Ty= 25C; 1,8V 1,65 V 1,85 V (Ir =.. .); max (1500 A) (1500 A) (3000 A) Vito) Ty max. 0,85 V 0,80 V 0,85 V [tT Tyj max 0,7 mQ 0,6 mQ 0,33 mQ | Ritnjc DSC/SSC 0,075/0,15 C/W 0,033/ (Double-sided 0,066 C/W Rineh cooling/single 0,02/0,04 C/W 0,007/ sided cooling) 0,014 C/AW Ty 40... + 150 Ci| 40 ... + 180 Cl- 40 ... + 150 C) Tstg 40... + 150 Cj 40... + 180 Cl 40 ... + 150 C F SI units 4... 5 kN 13,5 ... 16,5 KN US units 900 ... 1100 Ibs. 3000 ... 3500 Ibs Ww approx. 51g 230 g RC PR=2W 1 pF +200 Rp = | Pa=20W 25 kQ Case E18 E19 Rectifier Diodes SKN 501 SKN 870 Features e Reverse voltages up to 3000 V Capsule type metal-ceramic packages with precious metal pressure contacts e Contact diameters 19 and 32 mm Typical Applications All-purpose high power rectifier diodes SKN 870: High voltage grades available for industrial high power drives and medium traction applications e Cooling via heatsinks (double or single sided) Non-controllable and half-controllable rectifiers Free-wheeling diodes by SEMIKRON B835SLE ) MM 8136671) 0003875 015 MESEKG SEMIKRON INC ots 1000 eco wL- SKN 450 C/W: w 800 800 600 600 400 400 200 200 PEaV Peay 0 0 0 Ieqy 100 =200 = 300 400 500 AO Toms 80 100 c 180 Fig. 2 Power dissipation vs. forward current and ambient temperature 1500 wr SKN SO1 Pray Peay 0 9 0 Ieay 200 400 600 800 A 0 Tomb 50 100 150 200 Fig. 2b Power dissipation vs. forward current and ambient temperature 2000 Ww Ww 1500 1500 1000 1000 500 500 Peay P, FAY oO 0 o Ieav 600 900. A 0 Tamb 50 150 Fig. 2c Power dissipation vs. forward current and ambient temperature B8-36 by SEMIKROS51E D MM 81356671 0003476 TS1 BESEKG SEMIKRON SEMIKRON INC tray 0 50 Trgse 75 100 125 C 150 Fig. 3a Rated forward current vs. case temperature 14000 N 501 200 Tray 0 50 Tease 400 150 200 Fig. 3c Rated forward current vs. case temperature 1200 A Irav 50 Tegse 70 30 110 130 150 Fig. 3 e Rated forward current vs. case temperature J=01-23002~~C SKN 450 [| SSC 100 Tray 0 50 Teg: 75 100 125 c =(150 Fig. 3b Rated forward current vs. case temperature 750 A Trav 0 50 Tcase 400 150 200 Fig. 3d Rated forward current vs. case temperature 750 A hav 0 50 Tease 70 90 410 130 150 Fig. 3f Rated forward current vs. case temperature by SEMIKRON B8-37SLE D MM &h39bb71 ~ SEMIKRON INC 0003877 998 MMESEKG T-01-23 0.2 |" SKN 450 SKN 501 O15 OA 0,05 Zinyt s 102 3 t 10 Fig. 5a Transient thermal impedance vs. time 2000 AL_ SKN 450 1000 1000 500 Typ "150 25 ig 6 Ye 1 2 Vv 3 Fig. 6 a Forward characteristics 3000 A 2000 ip % Ve 05 1 15 2 Fig. 6 Forward characteristics od ccl_ SKN 870 0,08 0,06 004 0,02 Z(thyt O98 t 10 10 s 102 Fig. 5b Transient thermal impedance vs. time 2000 A 1800 1000 00 ip o Vp 08 1 15 vy 2 Fig. 6 b Forward characteristics 16 SKN450 , SKN 501 SKN 870 14 1,2 08 0,6 04 102 ms 103 t 101 Fig. 7 Surge overload current vs. time B8-38 by SEMIKRON