2N5551 / MMBT5551 — NPN General Purpose Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. B1 1
June 2009
2N5551 / MMBT5551
NPN General Purpose Amplifier
Features
• This device is designed for general purpose high voltage amplifie rs and gas discharge display drivers.
• Suffix “-C” means Center Collector in 2N5551 (1. Emitter 2. Collector 3. Base)
• Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)
Absolute Maximum Ratings * TA = 25°C unless othe rwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1. These ratings are based on a maximum junction temperature of 150 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA=25°C unless otherwise noted
* Device mounted on FR-4 PCB 1.6" × 1.6" × 0.06."
Symbol Parameter Value Units
VCEO Collector-Emitter Voltage 160 V
VCBO Collector-Base Voltage 180 V
VEBO Emitter-Base Voltage 6.0 V
ICCollector current - Continuous 600 mA
TJ, Tstg Junction and Storage Temperature -55 to +150 °C
Symbol Parameter Max Units
2N5551 *MMBT5551
PDTotal Device Dissipation
Derate above 25°C625
5.0 350
2.8 mW
mW/°C
RθJC Thermal Resistance, Junction to Case 83.3 °C/W
RθJA Thermal Resistance, Junction to Ambient 200 357 °C/W
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
Marking: 3S
TO-92
2N5551 MMBT5551
2N5551 / MMBT5551 — NPN General Purpose Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. B1 2
Electrical Characteristics TA = 25°C unless otherwise noted
Spice Model
NPN (Is=2.511f Xti=3 Eg=1.11 Vaf=100 Bf=242.6 Ne=1.249 Ise=2.511f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0 Ikr=0 Rc=1
Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m Vtf=5 Xtf=8 Rb=10)
Symbol Parameter Test Condition Min. Max. Units
Off Characteristics
V(BR)CEO Collector-Emitter Breakdown Voltage * IC = 1.0mA, IB = 0 160 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100μA, IE = 0 180 V
V(BR)EBO Emitter-Base Breakdown V o ltage IE = 10uA, IC = 0 6.0 V
ICBO Collector Cutoff Current VCB = 120V, IE = 0
VCB = 120V, IE = 0, TA = 100°C50
50 nA
μA
IEBO Emitter Cutoff Current VEB = 4.0V, IC = 0 50 nA
On Characteristics
hFE DC Current Gain IC = 1.0mA, VCE = 5.0V
IC = 10mA, VCE = 5.0V
IC = 50mA, VCE = 5.0V
80
80
30 250
VCE(sat) Collector-Emitter Saturation Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA 0.15
0.20 V
V
VBE(sat) Base-Emitter On Voltage IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA 1.0
1.0 V
V
Small Signal Characteristics
fTCurrent Gain Bandwidth Product IC = 10mA, VCE = 10V,
f = 100MHz 100 MHz
Cobo Output Capacitance VCB = 10V, IE = 0, f = 1.0MHz 6.0 pF
Cibo Input Capacitance VBE = 0.5V, IC = 0, f = 1.0MHz 20 p F
Hfe Small-Signal Current Gain IC = 1.0 mA, VCE = 10 V, f = 1.0kHz 50 250
NF Noise Figure IC = 250 uA, VCE= 5.0 V,
RS=1.0 kΩ, f=10 Hz to 15.7 kHz 8.0 dB
2N5551 / MMBT5551 — NPN General Purpose Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. B1 3
Typical Performance Characteristics
Figure 1. Typical Pulsed Current Gain
vs Collector Current Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current Figure 4. Base-Emitter On Voltage
vs Collector Current
Figure 5. Collector Cutoff Current
vs Ambient Temperature Figure 6. Input and Output Capacitance
vs Reverse Voltage
1 10 100 1000
0
50
100
150
200
250 125oC
100oC
75oC
-40oC
25oC
VCE=5V
hFE- DC CURRENT GAIN
IC- COLLECTOR CURRENT [mA]
1 10 100
0.01
0.1
1
10 ?10
125oC
100oC
75oC
-40oC25oC
VCE(SAT)- COLLEC TOR-EMITTER VOLTAGE [V]
IC- COLLECTOR CURRENT [mA]
110100
0.2
0.4
0.6
0.8
1.0
125oC
100oC
75oC
-40oC
25oC
VBE(SAT)- BASE-EMITTER VOLTAG E [ V]
IC- COLLECTOR CURRENT [mA]
1 10 100 1000
0.0
0.2
0.4
0.6
0.8
1.0
1.2
TA = 125oCTA = 100oC
TA = 75oC
TA = -40oC
TA = 25oC
VBE(ON)- BASE-EMITTER VOLTAGE [V]
IC- COLLECTOR CURRENT [mA]
25 50 75 100 12
5
1
10
50
T - AMB IENT TEMPER ATURE ( C)
I - C OLLECTOR CURR EN T (nA)
A
CBO
°
V = 100V
CB
012345678910
1
10
100
COB
CIB
CAPACITANCE [pF]
REVERSE BIAS VOLTAGE [V]
2N5551 / MMBT5551 — NPN General Purpose Amplifier
© 2009 Fairchild Semiconductor Corporation www.fairchildsemi.com
2N5551 / MMBT5551 Rev. B1 4
Typical Performance Characteristics (Continued)
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance Between Emitter-Base Figure 8. Small Signal Current Gain
vs Collector Current
Figure 7. Power Dissipation
vs Ambient Temperature
Between E mit ter- Bas e
0.1 1 10 100 1000
160
180
200
220
240
260
RESISTAN C E (k )
BV - BREAKDOWN VOLTAGE (V)
Ω
CER
I = 1.0 m A
C
vs Co llect or C urrent
11050
0
4
8
12
16
I - COLLECTOR CU RRENT (mA)
h - SMAL L SIGN AL CU RRENT GA IN
C
FE
FRE G = 20 M Hz
V = 10V
CE
0 25 50 75 100 125 150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com
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