© 2007 IXYS All rights reserved 1 - 7
20070531a
MIAA20WD600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Converter - Inverter Module
NPT IGBT
Single Phase
Rectifier
Three Phase
Inverter
VRRM = 1600 V VCES = 600 V
IDAVM25 = 65 A IC25 = 29 A
IFSM = 550 A VCE(sat) = 2.1 V
Pin configuration see outlines.
G1 G3 G5
G2 G4 G6
U V W
NTC1
L1
L2
N EU EV EW
P P1
D8 D10
D9 D11 NTC2
D1 D3 D5
D2 D4 D6
T1 T3 T5
T2 T4 T6
Features:
• High level of integration - only one
power semiconductor module required
for the whole drive
• Inverter with NPT IGBTs
- low saturation voltage
- positive temperature coefficient
- fast switching
- short tail current
• Epitaxial free wheeling diodes with
hiperfast soft reverse recovery
• Temperature sense included
Application:
• AC motor drives
• Pumps, Fans
• Washing machines
• Air-conditioning system
• Inverter and power supplies
Package:
• "Mini" package
• Assembly height is 17 mm
• Insulated base plate
• Pins suitable for wave soldering and
PCB mounting
• Assembly clips available
- IXKU 5-505 screw clamp
- IXRB 5-506 click clamp
• UL registered E72873
Part name (Marking on product)
MIAA20WD600TMH
E 72873
© 2007 IXYS All rights reserved 2 - 7
20070531a
MIAA20WD600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Output Inverter D1 - D6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitve reverse voltage TVJ = 150°C 600 V
IF25
IF80
forward current TC = 25°C
TC = 80°C
37
24
A
A
VFforward voltage IF = 20 A; VGE = 0 V TVJ = 25°C
TVJ = 125°C
1.95
1.65
2.2 V
V
Qrr
IRM
trr
Erec
reverse recovery charge
max. reverse recovery current
reverse recovery time
reverse recovery energy
VR = 300 V
diF /dt = -370 A/µs TVJ = 125°C
IF = 20 A; VGE = 0 V
0.58
10.7
110
60
µC
A
ns
µJ
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
(per diode)
0.55
1.6 K/W
K/W
Ouput Inverter T1 - T6
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VCES collector emitter voltage TVJ = 150°C 600 V
VGES
VGEM
max. DC gate voltage
max. transient collector gate voltage
continuous
transient
±20
±30
V
V
IC25
IC80
collector current TC = 25°C
TC = 80°C
29
20
A
A
Ptot total power dissipation TC = 25°C 100 W
VCE(sat) collector emitter saturation voltage IC = 20 A; VGE = 15 V TVJ = 25°C
TVJ = 125°C
2.1
2.4
2.7 V
V
VGE(th) gate emitter threshold voltage IC = 0.5 A; VGE = VCE TVJ = 25°C 4.5 5.5 6.5 V
ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C
TVJ = 125°C 1.3
1.1 mA
mA
IGES gate emitter leakage current VGE = ±20 V 150 nA
Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 900 pF
QG(on) total gate charge VCE = 300 V; VGE = 15 V; IC = 20 A 76 nC
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 25°C
VCE = 300 V; IC = 20 A
VGE = ±15 V; RG = 47 W
35
45
155
75
0.39
0.4
ns
ns
ns
ns
mJ
mJ
td(on)
tr
td(off)
tf
Eon
Eoff
turn-on delay time
current rise time
turn-off delay time
current fall time
turn-on energy per pulse
turn-off energy per pulse
inductive load TVJ = 125°C
VCE = 300 V; IC = 20 A
VGE = ±15 V; RG = 47 W
35
45
165
150
0.6
0.54
ns
ns
ns
ns
mJ
mJ
RBSOA reverse bias safe operating area VGE = ±15 V; RG = 47 W; IC = 40 A TVJ = 125°C VCEK < VCES-LS·dI /dt V
ISC
(SCSOA)
short circuit safe operating area VCE = 360 V; VGE = ±15 V; TVJ = 125°C
RG = 47 W; tp = 10 µs; non-repetitive
90 A
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
(per IGBT)
0.45
1.3 K/W
K/W
TC = 25°C unless otherwise stated
© 2007 IXYS All rights reserved 3 - 7
20070531a
MIAA20WD600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Input Rectifier Bridge D8 - D11
Ratings
Symbol Definitions Conditions min. typ. max. Unit
VRRM max. repetitive reverse voltage TVJ = 25°C 1600 V
IFAV
IDAVM
average forward current
max. average DC output current
sine 180° TC = 80°C
rect.; d = ½ TC = 80°C
39
42
A
A
IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25°C
TVJ = 125°C
550
tbd
A
A
I2tI2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25°C
TVJ = 125°C
1270
tbd
A2s
A2s
Ptot total power dissipation TC = 25°C 100 W
VFforward voltage IF = 30 A TVJ = 25°C
TVJ = 125°C
1.2
1.3
1.5 V
V
IRreverse current VR = VRRM TVJ = 25°C
TVJ = 125°C 0.3
0.03 mA
mA
RthJC
RthCH
thermal resistance junction to case
thermal resistance case to heatsink
(per diode)
(per diode) 0.4
1.2 K/W
K/W
Temperature Sensor NTC
Ratings
Symbol Definitions Conditions min. typ. max. Unit
R25
B25/50
resistance TC = 25°C 4.75 5.0
3375
5.25 kW
K
Module
Ratings
Symbol Definitions Conditions min. typ. max. Unit
TVJ
TVJM
Tstg
operating temperature
max. virtual junction temperature
storage temperature
-40
-40
125
150
125
°C
°C
°C
VISOL isolation voltage IISOL < 1 mA; 50/60 Hz 2500 V~
CTI comparative tracking index -
FCmounting force 40 80 N
dS
dA
creep distance on surface
strike distance through air
12.7
12
mm
mm
Weight 35 g
Equivalent Circuits for Simulation
Ratings
Symbol Definitions Conditions min. typ. max. Unit
V0
R0
rectifier diode D8 - D11 TVJ = 125°C 0.9
6
V
mW
V0
R0
IGBT T1 - T6 TVJ = 125°C 1.7
40
V
mW
V0
R0
free wheeling diode D1 - D6 TVJ = 125°C 1.25
12
V
mW
I
V
0
R
0
TC = 25°C unless otherwise stated
© 2007 IXYS All rights reserved 4 - 7
20070531a
MIAA20WD600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
G1 G3 G5
G2 G4 G6
UVW
NTC1
L1
L2
N EU EV EW
P P1
D8 D10
D9 D11 NTC2
D1 D3 D5
D2 D4 D6
T1 T3 T5
T2 T4 T6
Part number
M = Module
I = IGBT
A = IGBT (NPT)
A = Gen 1 / std
20 = Current Rating [A]
WD = 6-Pack + 1~ Rectifier Bridge
600 = Reverse Voltage [V]
T = NTC
MH = MiniPack2
Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code
Standard MIAA 20 WD 600 TMH MIAA20WD600TMH Box 20 504975
Circuit Diagram
Outline Drawing Dimensions in mm (1 mm = 0.0394“)
A
12
40,6
55,9
12,4
25,6
23
26,6
39,6
45,6
14
Ø4
0,5
12
17 ±0,35
20,5 ±0,50
8,15 ±0,35
A ( 2 : 1 )
1,4
1,8
3,6
1,2
2,2
0,635
Pin positions with tolerance Ø 0.4
16,51
20,32
24,13
26,37
27,94
31,75
35,56
44,45
48,26
10,16
17,78
19,05
22,86
31,75
Product Marking
P1
P
N
L1 L2
NTC1
G3 V
G1 U
G5 W
EW G6 EV G4 EU G2
NTC2
P
N
L1 L2
© 2007 IXYS All rights reserved 5 - 7
20070531a
MIAA20WD600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Typical output characteristics, VGE = 15 V Typical output characteristics (125°C)
Typical transfer characteristics Typical forward characteristics of freewheeling diode
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6
Vce [V]
Ic [A]
25 °C
125 °C
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Vce [V]
Ic [A]
Vge= 19V
Vge= 17V
Vge= 15V
Vge= 13V
Vge= 11V
Vge= 9V
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
5 6 7 8 9 10 11 12 13 14
Vge [V]
Ic [A]
25 °C
125 °C
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
30
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2
Vf [V]
If [A]
25 °C
125 °C
© 2007 IXYS All rights reserved 6 - 7
20070531a
MIAA20WD600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Typical turn on gate charge Typical switching energy versus collector current
Typical switching energy versus gate resistance Typical turn-off characteristics of free wheeling diode
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
0 5 10 15 20 25 30 35 40 45 50 55 60 65 70
Qg [nC]
Vge [[V]
Ic = 15A
Vce = 300V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Ic, If [A]
E [mJ]
Eon
Eoff
Erec
Vce = 300V
Vge = +/-15V
Rg = 68W
Tvj = 125°C
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
50 75 100 125 150 175 200 225 250 275 300 325 350
Rg [W]
E [mJ]
Eon
Eoff
Erec
Ic, If = 15A
Vce = 300V
Vge = +/-15V
Tvj = 125°C
330 W
68 W
68 W
330 W
150 W
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
11
11.5
12
100 150 200 250 300 350 400
dif/dt [A/µs]
Irr [A]
110
115
120
125
130
135
140
145
150
155
160
165
170
175
180
trr [ns]
Irr
trr
If = 15A
Vce = 300V
Vge = +/-15V
Tvj = 125°C
© 2007 IXYS All rights reserved 7 - 7
20070531a
MIAA20WD600TMH
IXYS reserves the right to change limits, test conditions and dimensions.
Advanced Technical Information
Typical turn-off characteristics of free wheeling diode
100
1000
10000
100000
0 25 50 75 100 125 150
T [°C]
Rnom [ ]
Typical thermistor resistance versus temperature
W
0
0.05
0.1
0.15
0.2
0.25
0.3
0.35
0.4
0.45
0.5
0.55
0.6
0.65
0.7
0 5 10 15 20 25 30 35
If [A]
Qrr [µC]
Vce = 300V
Vge = +/-15V
Rg = 68W
Tvj = 125°C
