NJVMJD45H11G - ON SEMICONDUCTOR

September, 2016 − Rev. 20 1Publication Order Number:

MJD44H11/D

MJD44H11(NPN),

MJD45H11(PNP)

Complementary Power

Transistors

DPAK for Surface Mount Applications

Designed for general purpose power and switching such as output or

driver stages in applications such as switching regulators, converters,

and power amplifiers.

Features

•Lead Formed for Surface Mount Application in Plastic Sleeves

(No Suffix)

•Straight Lead Version in Plastic Sleeves (“−1” Suffix)

•Electrically Similar to Popular D44H/D45H Series

•Low Collector Emitter Saturation Voltage

•Fast Switching Speeds

•Complementary Pairs Simplifies Designs

•Epoxy Meets UL 94 V−0 @ 0.125 in

•NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25_C, common for NPN and PNP, minus

sign, “−”, for PNP omitted, unless otherwise noted)

Rating Symbol Max Unit

Collector−Emitter Voltage VCEO 80 Vdc

Emitter−Base Voltage VEB 5 Vdc

Collector Current − Continuous IC8 Adc

Collector Current − Peak ICM 16 Adc

Total Power Dissipation

@ TC = 25°C

Derate above 25°C

PD20

0.16 W

W/°C

Total Power Dissipation (Note 1)

@ TA = 25°C

Derate above 25°C

PD1.75

0.014 W

W/°C

Operating and Storage Junction

Temperature Range TJ, Tstg −55 to +150 °C

ESD − Human Body Model HBM 3B V

ESD − Machine Model MM C V

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

SILICON

POWER TRANSISTORS

8 AMPERES

80 VOLTS, 20 WATTS

IPAK

CASE 369D

STYLE 1

DPAK

CASE 369C

STYLE 1

MARKING DIAGRAMS

A = Assembly Location

Y = Year

WW = Work Week

J4xH11 = Device Code

x = 4 or 5

G = Pb−Free Package

123

AYWW

xH11G

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

ORDERING INFORMATION

123

AYWW

xH11G

www.onsemi.com

IPAKDPAK

COMPLEMENTARY

BASE

EMITTER

COLLECTOR

2, 4

BASE

EMITTER

COLLECTOR

2, 4

DPAK

CASE 369G

STYLE 1

123

MJD44H11 (NPN), MJD45H11 (PNP)

www.onsemi.com

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 6.25 °C/W

Thermal Resistance, Junction−to−Ambient (Note 2) RqJA 71.4 °C/W

Lead Temperature for Soldering TL260 °C

2. These ratings are applicable when surface mounted on the minimum pad sizes recommended.

ELECTRICAL CHARACTERISTICS

(TA = 25_C, common for NPN and PNP, minus sign, “−”, for PNP omitted, unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage

(IC = 30 mA, IB = 0) VCEO(sus) 80 − − Vdc

Collector Cutoff Current

(VCE = Rated VCEO, VBE = 0) ICES − − 1.0 mA

Emitter Cutoff Current

(VEB = 5 Vdc) IEBO − − 1.0 mA

ON CHARACTERISTICS

Collector−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.4 Adc) VCE(sat) − − 1 Vdc

Base−Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc) VBE(sat) − − 1.5 Vdc

DC Current Gain

(VCE = 1 Vdc, IC = 2 Adc)

(VCE = 1 Vdc, IC = 4 Adc)

hFE 60

40 −

−−

−

DYNAMIC CHARACTERISTICS

Collector Capacitance

(VCB = 10 Vdc, ftest = 1 Mhz)

MJD44H11

MJD45H11

Ccb

−

−45

130 −

−

Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 Mhz)

MJD44H11

MJD45H11

−

−85

90 −

−

MHz

SWITCHING TIMES

Delay and Rise Times

(IC = 5 Adc, IB1 = 0.5 Adc)

MJD44H11

MJD45H11

td + tr

−

−300

135 −

−

Storage Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)

MJD44H11

MJD45H11

−

−500

500 −

−

Fall Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc)

MJD44H11

MJD45H11

−

−140

100 −

−

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

MJD44H11 (NPN), MJD45H11 (PNP)

www.onsemi.com

t, TIME (ms)

0.01

1 k

0.3

0.2

0.07

r(t), EFFECTIVE TRANSIENT THERMAL

RqJC(t) = r(t) RqJC

RqJC = 6.25°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.01

RESISTANCE (NORMALIZED)

0.7

Figure 1. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.2

SINGLE PULSE

D = 0.5

0.1

0.02

0.01

0.05

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.02 3 100

0.5

0.1

THERMAL LIMIT @ TC = 25°C

WIRE BOND LIMIT

5 7 20 7010

100ms

0.05

0.3

5030

Figure 2. Maximum Forward Bias

Safe Operating Area

1ms

500ms

5ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

≤ 150_C. TJ(pk) may be calculated from the data in

Figure 1. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

T, TEMPERATURE (°C)

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

2.5

1.5

0.5

TATC

Figure 3. Power Derating

SURFACE

MOUNT

MJD44H11 (NPN), MJD45H11 (PNP)

www.onsemi.com

Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain

IC, COLLECTOR CURRENT (A)

1010.10.01

100

1000

Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain

Figure 8. MJD44H11 Saturation Voltage

VCE(sat)

Figure 9. MJD45H11 Saturation Voltage

VCE(sat)

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.01

0.1

0.2

0.3

0.4

0.6

0.7

0.8

hFE, DC CURRENT GAINVCE(sat), COLL−EMIT SATURATION VOLTAGE (V)

150°C

−55°C

25°C

VCE = 1 V

IC, COLLECTOR CURRENT (A)

1010.10.01

100

1000

hFE, DC CURRENT GAIN

150°C

−55°C

25°C

VCE = 1 V

IC, COLLECTOR CURRENT (A)

1010.10.01

100

1000

hFE, DC CURRENT GAIN

150°C

−55°C

25°C

VCE = 4 V

IC, COLLECTOR CURRENT (A)

1010.10.01

100

1000

hFE, DC CURRENT GAIN

150°C

−55°C

25°C

VCE = 4 V

0.5

150°C

−55°C

25°C

IC/IB = 20

IC, COLLECTOR CURRENT (A)

1010.10.01

0.1

0.2

0.3

0.4

0.6

0.7

0.8

VCE(sat), COLL−EMIT SATURATION VOLTAGE (V)

0.5

150°C

−55°C

25°C

IC/IB = 20

MJD44H11 (NPN), MJD45H11 (PNP)

www.onsemi.com

Figure 10. MJD44H11 Saturation Voltage

VBE(sat)

Figure 11. MJD45H11 Saturation Voltage

VBE(sat)

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Figure 12. MJD44H11 Collector Saturation

Region Figure 13. MJD45H11 Collector Saturation

Region

IB, BASE CURRENT (mA) IB, BASE CURRENT (mA)

10,00010001001010.1

0.4

0.2

0.6

1.0

1.4

1.8

2.0

Figure 14. MJD44H11 Capacitance Figure 15. MJD45H11 Capacitance

VR, REVERSE VOLTAGE (V)

1001010.1

100

1000

VBE(sat), BASE−EMIT SATURATION

VOLTAGE (V)

VCE, COLLECTOR−EMITTER VOLTAGE (V)C, CAPACITANCE (pF)

150°C

−55°C

25°C

IC/IB = 20

1010.10.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VBE(sat), BASE−EMIT SATURATION

VOLTAGE (V)

150°C

−55°C

25°C

IC/IB = 20

0.8

1.2

1.6

TA = 25°C

IC = 8 A

1 A IC = 3 A

0.5 AIC = 0.1 A

10,00010001001010.1

0.4

0.2

0.6

1.0

1.4

1.8

2.0

VCE, COLLECTOR−EMITTER VOLTAGE (V)

0.8

1.2

1.6

TA = 25°C

Cob

VR, REVERSE VOLTAGE (V)

1001010.1

100

1000

C, CAPACITANCE (pF)

Cob

IC = 8 A

1 A IC = 3 A

0.5 A

IC = 0.1 A

MJD44H11 (NPN), MJD45H11 (PNP)

www.onsemi.com

Figure 16. MJD44H11

Current−Gain−Bandwidth Product Figure 17. MJD45H11

Current−Gain−Bandwidth Product

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

1010.10.01

100

1010.10.01

100

fTau, CURRENT−GAIN−BANDWIDTH

PRODUCT

fTau, CURRENT−GAIN−BANDWIDTH

PRODUCT

VCE = 2 V VCE = 2 V

MJD44H11 (NPN), MJD45H11 (PNP)

www.onsemi.com

ORDERING INFORMATION

Device Package Type Package Shipping†

MJD44H11G DPAK

(Pb−Free) 369C 75 Units / Rail

NJVMJD44H11G DPAK

(Pb−Free) 369C 75 Units / Rail

MJD44H11−1G DPAK−3

(Pb−Free) 369D 75 Units / Rail

MJD44H11RLG DPAK

(Pb−Free) 369C 1,800 / Tape & Reel

NJVMJD44H11RLG* DPAK

(Pb−Free) 369C 1,800 / Tape & Reel

MJD44H11T4G DPAK

(Pb−Free) 369C 2,500 / Tape & Reel

NJVMJD44H11T4G* DPAK

(Pb−Free) 369C 2,500 / Tape & Reel

MJD44H11T5G DPAK

(Pb−Free) 369C 2,500 / Tape & Reel

MJD45H11G DPAK

(Pb−Free) 369C 75 Units / Rail

NJVMJD45H11G* DPAK

(Pb−Free) 369C 75 Units / Rail

MJD45H11−1G DPAK−3

(Pb−Free) 369D 75 Units / Rail

MJD45H11RLG DPAK

(Pb−Free) 369C 1,800 / Tape & Reel

NJVMJD45H11RLG* DPAK

(Pb−Free) 369C 1,800 / Tape & Reel

MJD45H11T4G DPAK

(Pb−Free) 369C 2,500 / Tape & Reel

NJVMJD45H11T4G* DPAK

(Pb−Free) 369C 2,500 / Tape & Reel

NJVMJD44H11D3T4G* DPAK

(Pb−Free) 369G 2,500 / Tape & Reel

NJVMJD45H11D3T4G* DPAK

(Pb−Free) 369G 2,500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable

MJD44H11 (NPN), MJD45H11 (PNP)

www.onsemi.com

PACKAGE DIMENSIONS

DPAK (SINGLE GAUGE)

CASE 369C

ISSUE F

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

L4b2

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.028 0.045 0.72 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

7. OPTIONAL MOLD FEATURE.

12 3

5.80

0.228

2.58

0.102

1.60

0.063

6.20

0.244

3.00

0.118

6.17

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.114 REF 2.90 REF

L2 0.020 BSC 0.51 BSC

DET AIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

eBOTTOM VIEW

BOTTOM VIEW

SIDE VIEW

TOP VIEW

ALTERNATE

CONSTRUCTIONS

NOTE 7

MJD44H11 (NPN), MJD45H11 (PNP)

www.onsemi.com

PACKAGE DIMENSIONS

123

−T−

SEATING

PLANE

GD3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.180 0.215 4.45 5.45

S0.025 0.040 0.63 1.01

V0.035 0.050 0.89 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z0.155 −−− 3.93 −−−

IPAK

CASE 369D

ISSUE C

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

0.180 BSC

DPAK−3, SURFACE MOUNT

CASE 369G

ISSUE O

2 PL

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.22

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G4.58 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.102 0.114 2.60 2.89

R0.180 0.215 4.57 5.45

V0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.13 (0.005) T

L0.090 BSC 2.29 BSC

U0.020 −−− 0.51 −−−

123

−T− SEATING

PLANE

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor ’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer ’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body . Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MJD44H11/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loc

Sales Representative

◊