DATA SH EET
Product specification
Supersedes data of 1998 Jul 16 1999 Apr 08
DISCRETE SEMICONDUCTORS
BC869
PNP medium power transistor
b
ook, halfpage
M3D109
1999 Apr 08 2
Philips Semiconductors Product specification
PNP medium power transistor BC869
FEATURES
•High current (max. 1 A)
•Low voltage (max. 20 V).
APPLICATIONS
•Low voltage, high current LF applications.
DESCRIPTION
PNP medium power transistor in a SOT89 plastic
package. NPN complement: BC868.
PINNING
PIN DESCRIPTION
1 emitter
2 collector
3 base
Fig.1 Simplified outline (SOT89) and symbol.
handbook, halfpage
123
Bottom view
MAM297
3
2
1
MARKING
TYPE NUMBER MARKING CODE
BC869 CEC
BC869-16 CGC
BC869-25 CHC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter −−32 V
VCEO collector-emitter voltage open base −−20 V
VEBO emitter-base voltage open collector −−5V
I
Ccollector current (DC) −−1A
I
CM peak collector current −−2A
I
BM peak base current −−200 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −1.35 W
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 08 3
Philips Semiconductors Product specification
PNP medium power transistor BC869
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 6 cm2.
For other mounting conditions, see
“Thermal considerations for SOT89 in the General Part of associated Handbook”.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 93 K/W
Rth j-s thermal resistance from junction to soldering point 13 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =−25 V −−−100 nA
IE= 0; VCB =−25 V; Tj= 150 °C−−−10 µA
IEBO emitter cut-off current IC= 0; VEB =−5V −−−100 nA
hFE DC current gain IC=−5 mA; VCE =−10 V; see Fig.2 50 −−
I
C
=−500 mA; VCE =−1 V; see Fig.2 100 −375
IC=−1 A; VCE =−1 V; see Fig.2 60 −−
DC current gain IC=−500 mA; VCE =−1 V; see Fig.2
BC869-16 100 −250
BC869-25 160 −375
VCEsat collector-emitter saturation
voltage IC=−1 A; IB=−100 mA −−−500 mV
VBE base-emitter voltage IC=−5 mA; VCE =−10 V −−620 −mV
IC=−1 A; VCE =−1V −−−1V
f
Ttransition frequency IC=−10 mA; VCE =−5 V ; f = 100 MHz 40 −−MHz
1999 Apr 08 4
Philips Semiconductors Product specification
PNP medium power transistor BC869
Fig.2 DC current gain; typical values.
VCE =−1V.
handbook, full pagewidth
0
200
400
hFE
100
300
MGD845
−10−1−1IC (mA)
−10 −102−104
−103
1999 Apr 08 5
Philips Semiconductors Product specification
PNP medium power transistor BC869
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
DIMENSIONS (mm are the original dimensions)
SOT89 97-02-28
wM
e1
e
EHE
B
0 2 4 mm
scale
b3
b2
b1
c
D
L
A
Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89
123
UNIT A
mm 1.6
1.4 0.48
0.35
c
0.44
0.37
D
4.6
4.4
E
2.6
2.4
HE
4.25
3.75
e
3.0
w
0.13
e1
1.5
L
min.
0.8
b2
b1
0.53
0.40
b3
1.8
1.4
1999 Apr 08 6
Philips Semiconductors Product specification
PNP medium power transistor BC869
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 08 7
Philips Semiconductors Product specification
PNP medium power transistor BC869
NOTES
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Printed in The Netherlands 115002/00/04/pp8 Date of release: 1999 Apr 08 Document order number: 9397 750 05532
