NSVRB751S40T5G - ON SEMICONDUCTOR

August, 2018 − Rev. 8 1Publication Order Number:

RB751S40T1/D

RB751S40

Schottky Barrier Diode

These Schottky barrier diodes are designed for high−speed

switching applications, circuit protection, and voltage clamping.

Extremely low forward voltage reduces conduction loss. Miniature

surface mount package is excellent for hand−held and portable

applications where space is limited.

Features

•Extremely Fast Switching Speed

•Extremely Low Forward Voltage − 0.28 V (Typ) @ IF = 1.0 mAdc

•Low Reverse Current

•Lead−Free Plating

•NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Rating Symbol Value Unit

Peak Reverse Voltage VRM 40 V

Reverse Voltage VR30 V

Forward Continuous Current (DC) IF30 mA

Peak Forward Surge Current IFSM 500 mA

ESD Rating: Class 1C per Human Body Model

Class A per Machine Model

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°C

Derate above 25°C

PD200

1.57

mW/°C

Thermal Resistance,

Junction−to−Ambient RqJA 635 °C/W

Junction and Storage

Temperature Range TJ, Tstg −55 to +150 °C

1. FR−5 Minimum Pad.

40 V SCHOTTKY

BARRIER DIODE

CATHODE

ANODE

SOD−523

CASE 502

STYLE 1

5E = Specific Device Code

M = Date Code

G= Pb−Free Package

MARKING DIAGRAM

5E MG

Device Package Shipping†

ORDERING INFORMATION

RB751S40T1G SOD−523

(Pb−Free) 3000 / Tape &

Reel

NSVRB751S40T1G SOD−523

(Pb−Free) 3000 / Tape &

Reel

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

(Note: Microdot may be in either location)

www.onsemi.com

RB751S40T5G SOD−523

(Pb−Free) 8000 / Tape &

Reel

NSVRB751S40T5G SOD−523

(Pb−Free) 8000 / Tape &

Reel

RB751S40

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

Reverse Breakdown Voltage

(IR = 10 mA) V(BR)R 30 − − V

Total Capacitance

(VR = 1.0 V, f = 1.0 MHz) CT− 2.0 2.5 pF

Reverse Leakage

(VR = 30 V) IR− 300 500 nAdc

Forward Voltage

(IF = 1.0 mAdc) VF− 0.28 0.37 Vdc

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

25°C

125°C

85°C

TA = 150°C

0 0.05

VF, FORWARD VOLTAGE (VOLTS)

0.1

1.0

0.1

85°C

VR, REVERSE VOLTAGE (VOLTS)

1.0

0.1

0.01

0.001

VR, REVERSE VOLTAGE (VOLTS)

0.5

CT, CAPACITANCE (pF)

2.0 4.0

IF, FORWARD CURRENT (mA)

Figure 1. Typical Forward Voltage Figure 2. Reverse Current versus Reverse

Voltage

Figure 3. Typical Capacitance

-40°C

25°C

IR, REVERSE CURRENT (μA)

-55°C

150°C

125°C

1000

0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 10 15 20 25 30 35

1.0

1.5

2.0

2.5

3.0

6.0 8.0 10 12 14 16 18

100

May, 2002 − Rev. 01O

1Case Outline Number:

502

SOD−523

CASE 502−01

ISSUE E

DATE 28 SEP 2010

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PRO-

TRUSIONS, OR GATE BURRS.

XX = Specific Device Code

M Date Code

−X−

−Y−

b2X

0.08 X Y

DIM MIN NOM MAX

MILLIMETERS

D1.10 1.20 1.30

E0.70 0.80 0.90

A0.50 0.60 0.70

b0.25 0.30 0.35

c0.07 0.14 0.20

L0.30 REF

H1.50 1.60 1.70

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

SCALE 4:1

*This information is generic. Please refer to

device data sheet for actual part marking.

Pb−Free indicator, “G” or microdot “ G”,

may or may not be present.

GENERIC

MARKING DIAGRAM*

STYLE 1:

PIN 1. CATHODE (POLARITY BAND)

2. ANODE

STYLE 2:

NO POLARITY

STYLE 1 STYLE 2

RECOMMENDED

TOP VIEW

SIDE VIEW

BOTTOM VIEW

0.48

0.40

1.80

DIMENSION: MILLIMETERS

PACKAGE

OUTLINE

L2 0.15 0.20 0.25

MECHANICAL CASE OUTLINE

PACKAGE DIMENSIONS

http://onsemi.com

October, 2002 − Rev. 0

Case Outline Number:

XXX

DOCUMENT NUMBER:

STATUS:

NEW STANDARD:

DESCRIPTION:

98AON11524D

ON SEMICONDUCTOR STANDARD

SOD−523

Electronic versions are uncontrolled except when

accessed directly from the Document Repository. Printed

versions are uncontrolled except when stamped

“CONTROLLED COPY” in red.

PAGE 1 OF 2

DOCUMENT NUMBER:

98AON11524D

PAGE 2 OF 2

ISSUE REVISION DATE

AADDED CATHODE BAND. REQ. BY M. DEWITT 07 JUL 2004

BUPDATED FOOTPRINT AND MARKING. REQ. BY S. WEST. 21 FEB 2005

CCREATED CATHODE AND NON−CATHODE BAND OPTIONS.

REQ. BY J. DAUGHERTY.

13 MAR 2007

DCHANGED DIMENSION LABELS TO MATCH CURRENT STANDARDS. REQ. BY

D. TRUHITTE.

27 JAN 2009

EADDED BOTTOM VIEW/UPDATED SOLDER FOOTPRINT. REQ. BY D. TRUHITTE. 28 SEP 2010

September, 2010 − Rev. 01E

Case Outline Number:

502

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