S E M I C O N D U C T O R RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM 45A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power MOSFETs July 1996 Features Description * 45A, 60V * UIS Rating Curve The RFG45N06LE, RFP45N06LE, RF1S45N06LE, and RF1S45N06LESM are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits. * +175oC Operating Temperature Formerly developmental type TA49177. * rDS(ON) = 0.028 * 2kV ESD Protected * Temperature Compensating PSPICE Model * Peak Current vs Pulse Width Curve Ordering Information PART NUMBER PACKAGE BRAND RFG45N06LE TO-247 FG45N06L RFP45N06LE TO-220AB FP45N06L RF1S45N06LE TO-262AA F45N06LE RF1S45N06LESM TO-263AB F45N06LE Symbol D G NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, i.e. RF1S45N06LESM9A. S Packaging JEDEC STYLE TO-247 JEDEC TO-220AB SOURCE DRAIN GATE SOURCE DRAIN GATE DRAIN (FLANGE) DRAIN (FLANGE) JEDEC TO-262AA JEDEC TO-263AB SOURCE DRAIN GATE M A A DRAIN (FLANGE) A DRAIN (FLANGE) GATE SOURCE CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1996 1 File Number 4076 RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM Absolute Maximum Ratings TC = +25oC RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM 60 Drain-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS 60 Drain-Gate Voltage (RGS = 1M) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 10 Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Drain Current 45 Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Refer to Peak Current Curve Refer to UIS Curve Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Power Dissipation 142 TC = +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Derate above +25oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.95 -55 to +175 Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TSTG, TJ 260 Soldering Temperature of Leads for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Electrostatic Discharge Rating MIL-STD-883, Category B(2) . . . . . . . . . . . . . . . . . . . . .ESD 2 UNITS V V V A W W/oC oC oC kV CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = +25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 60 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250A Zero Gate Voltage Drain Current Gate-Source Leakage Current 1 - 2 V TC = +25oC - - 1 A TC = +150oC - - 50 A VGS = 10V - - 10 A ID = 45A, VGS = 5V - - 0.028 VDD = 30V, ID = 45A, RL = 0.67, VGS = 5V, RGS = 2.5 - - 215 ns - 20 - ns tR - 150 - ns tD(OFF) - 55 - ns tF - 90 - ns tOFF - - 185 ns - 107 135 nC - 58 75 nC IDSS IGSS On Resistance rDS(ON) Turn-On Time tON Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-Off Time tD(ON) VDS = 60V, VGS = 0V Total Gate Charge QG(TOT) VGS = 0V to 10V Gate Charge at 5V QG(5) VGS = 0V to 5V QG(TH) VGS = 0V to 1V - 2.4 3.0 nC VDS = 25V, VGS = 0V, f = 1MHz - 2150 - pF pF Threshold Gate Charge VDD = 48V, ID = 45A, RL = 1.07 Input Capacitance CISS Output Capacitance COSS - 640 - Reverse Transfer Capacitance CRSS - 240 - pF Thermal Resistance Junction-to-Case RJC Thermal Resistance Junction-to-Ambient RJA - - 1.05 oC/W TO-247 - - 30 oC/W TO-220, TO-262, and TO-263 - - 80 oC/W MIN TYP MAX UNITS Source-Drain Diode Ratings and Specifications PARAMETER SYMBOL TEST CONDITIONS Forward Voltage VSD ISD = 45A - - 1.5 V Reverse Recovery Time tRR ISD = 45A, dISD/dt = 100A/s - - 155 ns 2 RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM Typical Performance Curves TC = +25oC 10 100 ZJC, NORMALIZED THERMAL RESPONSE ID, DRAIN CURRENT (A) 500 100s 1ms 10 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 1 1 0.1 VDSS MAX = 60V t1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (V) SINGLE PULSE 0.01 10-5 200 IDM, PEAK CURRENT CAPABILITY (A) 30 20 10 75 100 125 150 ID(ON), ON-STATE DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4V VGS = 3.5V 40 VGS = 3V 20 VGS = 2.5V 1.5 3.0 4.5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 101 TC = +25oC 100 THERMAL IMPEDANCE MAY LIMIT CURRENT IN THIS REGION FOR TEMPERATURES ABOVE +25oC DERATE PEAK CURRENT AS FOLLOWS: I 10-4 = I25 175 - TC 150 10-3 10-2 10-1 t, PULSE WIDTH (s) 100 101 VDD = 15V 100 60 0 100 FIGURE 4. PEAK CURRENT CAPABILITY PULSE DURATION = 250s, TC = +25oC 80 10-1 VGS = 5V FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE VGS = 10V VGS = 5V 10-2 VGS = 10V 10 10-5 175 TC, CASE TEMPERATURE (oC) 100 10-3 FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 500 50 10-4 t2 t, RECTANGULAR PULSE DURATION (s) 40 0 PDM 100ms 50 ID, DRAIN CURRENT (A) 1 DC FIGURE 1. SAFE OPERATING AREA CURVE 0 25 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC + TC DUTY CYCLE 0.5 0.2 0.1 0.05 0.02 0.01 -55oC 80 +175oC 60 40 20 PULSE TEST PULSE DURATION = 250s DUTY CYCLE = 0.5% MAX 0 0.0 6.0 FIGURE 5. TYPICAL SATURATION CHARACTERISTICS +25oC 1.5 3.0 4.5 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS 3 6.0 RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM (Continued) ID = 250A 1.2 1.1 1.0 0.9 0.8 -80 VGS = VDS, ID = 250A 1.2 VGS(TH), NORMALIZED GATE THRESHOLD VOLTAGE -40 0 40 80 120 160 TJ , JUNCTION TEMPERATURE (oC) 1.0 0.8 0.6 0.4 -80 200 FIGURE 7. NORMALIZED DRAIN-SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. NORMALIZED GATE THRESHOLD VOLTAGE vs JUNCTION TEMPERATURE PULSE DURATION = 250s, VDD = 15V 80 2.5 rDS(ON), ON-STATE RESISTANCE (m) rDS(ON), NORMALIZED ON RESISTANCE PULSE DURATION = 250s, VGS = 5V, ID = 45A 2.0 1.5 1.0 0.5 -80 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 160 60 ID = 11.25A 40 ID = 22.5A 20 0 2.0 VDS , DRAIN-SOURCE VOLTAGE (V) tD(OFF) 400 tF 300 200 tD(ON) 100 30 4.5 5.0 40 5.00 VDD = BVDSS 50 RGS, GATE-TO-SOURCE RESISTANCE () FIGURE 11. SWITCHING TIME AS A FUNCTION OF GATE RESISTANCE VDD = BVDSS 45 3.75 RL = 1.3 IG(REF) = 1.3mA VGS = 5V 30 15 0 0 20 4.0 3.5 60 tR 10 3.0 FIGURE 10. rDS(ON) FOR VARYING CONDITIONS OF GATE VOLTAGE AND DRAIN CURRENT 500 0 2.5 VGS, GATE-TO-SOURCE VOLTAGE (V) VDD = 30V, ID = 45A, RL = 0.67 600 ID = 90A ID = 45A 200 FIGURE 9. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE SWITCHING TIME (ns) 200 2.50 PLATEAU VOLTAGES IN DESCENDING ORDER: VDD = BVDSS VDD = 0.75 BVDSS VDD = 0.50 BVDSS VDD = 0.25 BVDSS I G ( REF ) 20 ---------------------I G ( AC T ) t, TIME (s) I G ( REF ) 80 ---------------------I G ( AC T ) 1.25 VGS , GATE-SOURCE VOLTAGE (V) BVDSS, NORMALIZED DRAIN-TO-SOURCE BREAKDOWN VOLTAGE Typical Performance Curves 0 FIGURE 12. NORMALIZED SWITCHING WAVEFORMS FOR CONSTANT GATE CURRENT. REFER TO HARRIS APPLICATION NOTES AN7254 AND AN7260 4 RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM Typical Performance Curves (Continued) 200 IAS, AVALANCHE CURRENT (A) VGS = 0V, FREQUENCY (f) = 1MHz 3000 C, CAPACITANCE (pF) 2500 CISS 2000 1500 1000 COSS 500 0 CRSS 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 100 STARTING TJ = +25oC 10 STARTING TJ = +150oC If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 1 0.01 25 FIGURE 13. TYPICAL CAPACITANCE vs VOLTAGE 0.1 1 10 tAV, TIME IN AVALANCHE (ms) 100 FIGURE 14. UNCLAMPED INDUCTIVE SWITCHING. REFER TO HARRIS APPLICATION NOTES AN9321 AND AN9322 POWER DISSIPATION MULTIPLIER 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 125 50 75 100 TC , CASE TEMPERATURE (oC) 25 150 175 FIGURE 15. NORMALIZED POWER DISSIPATION vs TEMPERATURE DERATING CURVE Test Circuits and Waveforms VDS BVDSS tP VDS L IAS VARY tP TO OBTAIN REQUIRED PEAK IAS RG VDD + VDD - VGS DUT 0V tP IL tAV 0.01 FIGURE 16. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 17. UNCLAMPED ENERGY WAVEFORMS 5 RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM Test Circuits and Waveforms (Continued) VDD tON tOFF tD(ON) RL tD(OFF) tF tR VDS 90% VDS 90% VGS 10% 10% 0V 90% RGS DUT VGS 50% 10% FIGURE 18. RESISTIVE SWITCHING TEST CIRCUIT 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS 6 RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM Temperature Compensated PSPICE Model for the RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM SUBCKT 45N06LE 2 1 3 ; rev 10/25/95 LDRAIN CA 12 8 7.50e-9 CB 15 14 7.50e-9 CIN 6 8 1.90e-9 DPLCAP DRAIN 2 10 DBODY 7 5 DBODYMOD DBREAK 5 11 DBREAKMOD DESD1 91 9 DESD1MOD DESD2 91 7 DESD2MOD DPLCAP 10 5 DPLCAPMOD RLDRAIN RSLC1 51 + 5 ESLC 51 RSLC2 DBREAK 11 50 EBREAK 11 7 17 18 67.53 EDS 14 8 5 8 1 EGS 13 8 6 8 1 ESG 6 10 6 8 1 EVTHRES 6 21 19 8 1 EVTEMP 20 6 18 22 1 IT 8 17 1 5 ESG LGATE GATE 1 LDRAIN 2 5 1e-9 LGATE 1 9 7.29e-9 LSOURCE 3 7 6.16e-9 RLGATE MMED 16 6 8 8 MMEDMOD MSTRO 16 6 8 8 MSTROMOD MWEAK 16 21 8 8 MWEAKMOD RBREAK 17 18 RBREAKMOD 1 RDRAIN 50 16 RDRAINMOD 8.02e-3 RGATE 9 20 1.65 RLDRAIN 2 5 10 RLGATE 1 9 72.9 RLSOURCE 3 7 61.6 RSLC1 5 51 RSLCMOD 1e-6 RSLC2 5 50 1e3 RSOURCE 8 7 RSOURCEMOD 5.00e-3 RVTHRES 22 8 RVTHRESMOD 1 RVTEMP 18 19 RVTEMPMOD 1 + EBREAK 17 18 RDRAIN 16 6 8 + EVTHRES + 19 8 EVTEMP RGATE + 18 9 20 22 21 6 DBODY MWEAK MMED MSTRO DESD1 91 DESD2 LSOURCE CIN RSOURCE 8 SOURCE 3 7 RLSOURCE S1A 12 13 8 S2A 15 14 13 S1B RBREAK 18 17 S2B 13 CA RVTEMP CB + EGS 6 8 EDS IT 14 + 19 VBAT 5 8 + 8 22 RVTHRES S1A 6 12 13 8 S1AMOD S1B 13 12 13 8 S1BMOD S2A 6 15 14 13 S2AMOD S2B 13 15 14 13 S2BMOD VBAT 22 19 DC 1 ESLC 51 50 VALUE = {(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*190),2.1))} .MODEL DBODYMOD D (IS = 1.80e-12 RS = 6.85e-3 TRS1 = 1.85e-3 TRS2 = 3.99e-6 CJO = 1.72e-9 TT = 7.7e-8 M = 0.45) .MODEL DBREAKMOD D (RS = 1.1e-1 TRS1 = 1.79e-3 TRS2 = -1.88e-5) .MODEL DESD1MOD D (BV = 12.80 TBV1 = 0 TBV2 = 0 RS = 43 TRS1 = 1.07e-6 TRS2 = 0) .MODEL DESD2MOD D (BV = 12.85 TBV1 = 0 TBV2 = 0 RS = 0 TRS1 = 1.07e-6 TRS2 = 0) .MODEL DPLCAPMOD D (CJO = 1.69e-9 IS = 1e-30 N = 10 M = 0.60) .MODEL MMEDMOD NMOS (VTO = 1.54 KP = 2.50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 1.65) .MODEL MSTROMOD NMOS (VTO = 1.877 KP = 47.50 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u) .MODEL MWEAKMOD NMOS (VTO = 1.335 KP = 0.10 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u RG = 16.5 RS = 0.1) .MODEL RBREAKMOD RES (TC1 = 9.94e-4 TC2 = 3.94e-7) .MODEL RDRAINMOD RES (TC1 = 7.70e-3 TC2 = 3.17e-5) .MODEL RSLCMOD RES (TC1 = 1.16e-3 TC2 = 2.02e-5) .MODEL RSOURCEMOD RES (TC1 = 0 TC2 = 0) .MODEL RVTHRESMOD RES (TC1 = -7.89e-4 TC2 = -9.45e-6) .MODEL RVTEMPMOD RES (TC1 = -1.60e-3 TC2 = 1.24e-6) .MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -4.80 VOFF = -1.80) .MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.80 VOFF = -4.80) .MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -1.10 VOFF = 1.90) .MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 1.90 VOFF = -1.10) .ENDS NOTE: 1. For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991. 7 RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM TO-247 3 LEAD JEDEC STYLE TO-247 PLASTIC PACKAGE A E TERM. 4 OS INCHES OP SYMBOL Q OR D L1 MILLIMETERS MIN MAX NOTES A 0.180 0.190 4.58 4.82 - b 0.046 0.051 1.17 1.29 2, 3 b1 0.060 0.070 1.53 1.77 1, 2 b2 0.095 0.105 2.42 2.66 1, 2 c 0.020 0.026 0.51 0.66 1, 2, 3 0.800 0.820 20.32 20.82 - b1 E 0.605 0.625 15.37 15.87 b2 e c e1 b 2 MAX D L 1 MIN 3 3 J1 e 0.219 TYP 0.438 BSC - 5.56 TYP 4 11.12 BSC 4 J1 0.090 0.105 2.29 2.66 1 L 0.620 0.640 15.75 16.25 - BACK VIEW L1 0.145 0.155 3.69 3.93 1 2 e1 5 OP 0.138 0.144 3.51 3.65 - Q 0.210 0.220 5.34 5.58 - LEAD NO. 1 - GATE OR 0.195 0.205 4.96 5.20 - LEAD NO. 2 - DRAIN OS 0.260 0.270 6.61 6.85 - LEAD NO. 3 - SOURCE TERM. 4 - DRAIN NOTES: 1. Lead dimension and finish uncontrolled in L1. 2. Lead dimension (without solder). 3. Add typically 0.002 inches (0.05mm) for solder coating. 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. 8 RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM TO-220AB 3 LEAD JEDEC TO-220AB PLASTIC PACKAGE A INCHES E OP A1 Q H1 TERM. 4 D 45o E1 D1 L1 b1 L b c MIN MAX MIN MAX NOTES A 0.170 0.180 4.32 4.57 - A1 0.048 0.052 1.22 1.32 - b 0.030 0.034 0.77 0.86 3, 4 b1 0.045 0.055 1.15 1.39 2, 3 c 0.014 0.019 0.36 0.48 2, 3, 4 D 0.590 0.610 14.99 15.49 - D1 - 0.160 E 0.395 0.410 E1 - 0.030 e 60o 1 2 e1 3 e J1 e1 LEAD NO. 1 - GATE LEAD NO. 2 - DRAIN LEAD NO. 3 - SOURCE TERM. 4 - DRAIN MILLIMETERS SYMBOL 0.100 TYP 0.200 BSC H1 0.235 0.255 J1 0.100 0.110 L 0.530 0.550 10.04 - 4.06 - 10.41 - 0.76 - 2.54 TYP 5 5.08 BSC 5 5.97 6.47 - 2.54 2.79 6 13.47 13.97 - L1 0.130 0.150 3.31 3.81 2 OP 0.149 0.153 3.79 3.88 - Q 0.102 0.112 2.60 2.84 - NOTES: 1. These dimensions are within allowable dimensions of Rev. J of JEDEC TO-220AB outline dated 3-24-87. 2. Lead dimension and finish uncontrolled in L1. 3. Lead dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder coating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 1 dated 1-93. 9 RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM TO-262AA 3 LEAD JEDEC TO-262AA PLASTIC PACKAGE E INCHES A 15o A1 H1 TERM. 4 D L1 b1 MIN MAX MIN MAX c A 0.170 0.180 4.32 4.57 - 0.048 0.052 1.22 1.32 3, 4 b 0.030 0.034 0.77 0.86 3, 4 b1 0.045 0.055 1.15 1.39 3, 4 c 0.018 0.022 0.46 0.55 3, 4 D 0.405 0.425 10.29 10.79 - E 0.395 0.405 10.04 10.28 e1 L 60o 1 2 3 e J1 - GATE LEAD NO. 2 - DRAIN LEAD NO. 3 - SOURCE TERM. 4 - DRAIN 0.100 TYP 0.200 BSC - 2.54 TYP 5 5.08 BSC 5 H1 0.045 0.055 1.15 1.39 - J1 0.095 0.105 L 0.530 0.550 2.42 2.66 6 13.47 13.97 - L1 0.110 0.130 2.80 3.30 2 NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC TO-262AA outline dated 6-90. 2. Solder finish uncontrolled in this area. 3. Dimension (without solder). 4. Add typically 0.002 inches (0.05mm) for solder plating. 5. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 6. Position of lead to be measured 0.100 inches (2.54mm) from bottom of dimension D. 7. Controlling dimension: Inch. 8. Revision 4 dated 10-95. e1 LEAD NO. 1 NOTES A1 e b MILLIMETERS SYMBOL 10 RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM TO-263AB SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE E INCHES A A1 H1 TERM. 4 D L2 L1 L 1 3 b b1 e c e1 J1 .450 (11.43) TERM. 4 L3 .350 (8.89) b2 .700 (17.78) 3 .150 (3.81) .080(2.03) .062(1.58) .062(1.58) MINIMUM PAD SIZE RECOMMENDED FOR SURFACE-MOUNTED APPLICATIONS LEAD NO. 1 - GATE LEAD NO. 3 - SOURCE TERM. 4 - DRAIN MIN MAX MIN MAX NOTES A 0.170 0.180 4.32 4.57 - A1 0.048 0.052 1.22 1.32 4, 5 b 0.030 0.034 0.77 0.86 4, 5 b1 0.045 0.055 1.15 1.39 4, 5 b2 0.310 - 7.88 - 2 c 0.018 0.022 0.46 0.55 4, 5 D 0.405 0.425 10.29 10.79 - E 0.395 0.405 10.04 10.28 - e 0.100 TYP 2.54 TYP 7 e1 0.200 BSC 5.08 BSC 7 H1 0.045 0.055 1.15 1.39 - J1 0.095 0.105 2.42 2.66 - L 0.175 0.195 4.45 4.95 - L1 0.090 0.110 2.29 2.79 4, 6 L2 0.050 0.070 1.27 1.77 3 L3 0.315 - 8.01 - 2 NOTES: 1. These dimensions are within allowable dimensions of Rev. C of JEDEC TO-263AB outline dated 2-92. 2. L3 and b2 dimensions established a minimum mounting surface for terminal 4. 3. Solder finish uncontrolled in this area. 4. Dimension (without solder). 5. Add typically 0.002 inches (0.05mm) for solder plating. 6. L1 is the terminal length for soldering. 7. Position of lead to be measured 0.120 inches (3.05mm) from bottom of dimension D. 8. Controlling dimension: Inch. 9. Revision 7 dated 10-95. 1 .080(2.03) MILLIMETERS SYMBOL 11 RFG45N06LE, RFP45N06LE, RF1S45N06LE, RF1S45N06LESM TO-263AB 24mm TAPE AND REEL 40mm MIN. ACCESS HOLE 4.0mm 1.5mm DIA. HOLE 2.0mm 30.4mm 13mm 330mm 1.75mm C L 24mm 100mm 16mm 24.4mm USER DIRECTION OF FEED COVER TAPE GENERAL INFORMATION 1. USE "9A" SUFFIX ON PART NUMBER. 2. 800 PIECES PER REEL. 3. ORDER IN MULTIPLES OF FULL REELS ONLY. 4. MEETS EIA-481 REVISION "A" SPECIFICATIONS. Revision 7 dated 10-95 All Harris Semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. 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