Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS 60V
▼ Small Package Outline RDS(ON) 2Ω
▼ Surface Mount Device ID450mA
▼ RoHS Compliant & Halogen-Free
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃mA
ID@TA=70℃mA
IDM mA
PD@TA=25℃W
W/℃
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3180 ℃/W
Data and specifications subject to change without notice
Thermal Data Parameter
Storage Temperature Range
Total Power Dissipation 0.7
-55 to 150
Operating Junction Temperature Range -55 to 150
Linear Derating Factor 0.005
Continuous Drain Current3, VGS @ 10V 360
Pulsed Drain Current1950
Gate-Source Voltage +20
Continuous Drain Current3, VGS @ 10V 450
Parameter Rating
Drain-Source Voltage 60
Halogen-Free Product
1
AP2N7002K-HF
201006244
D
G
S
SOT-23
Advanced Power MOSFETs utilized advanced processing techniques to
achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
G
D
S
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 60 - - V
ΔBVDSS/ΔTjBreakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.06 - V/℃
RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=450mA - - 2 Ω
VGS=4.5V, ID=200mA - - 4 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 2.5 V
gfs Forward Transconductance VDS=10V, ID=450mA - 400 - mS
IDSS Drain-Source Leakage Current VDS=60V, VGS=0V - - 10 uA
Drain-Source Leakage Current (Tj=70oC) VDS=48V ,VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +30 uA
QgTotal Gate Charge2ID=450mA - 1 1.6 nC
Qgs Gate-Source Charge VDS=50V - 0.5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 0.5 - nC
td(on) Turn-on Delay Time2VDS=30V - 12 - ns
trRise Time ID=450mA - 10 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 56 - ns
tfFall Time RD=52Ω-29-ns
Ciss Input Capacitance VGS=0V - 32 50 pF
Coss Output Capacitance VDS=25V - 8 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 6 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=450mA, VGS=0V - - 1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board t≦10sec; 400℃/W when mounted on min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP2N7002K-HF
A
P2N7002K-HF
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fi
g
5. Forward Characteristic o
f
Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0.0
0.2
0.4
0.6
0.8
1.0
0.0 2.0 4.0 6.0
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC10V
7.0V
5.0V
4.5V
VG=3.0V
0.0
0.2
0.4
0.6
0.8
1.0
0246
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC10V
7.0V
5.0V
4.5V
VG=3.0V
1.0
1.5
2.0
2.5
3.0
246810
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=200mA
TA=25oC
0.5
1.0
1.5
2.0
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=450mA
VG=10V
0
0.2
0.4
0.6
0 0.4 0.8 1.2 1.6
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oCTj=150oC
0.5
0.9
1.3
1.7
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
AP2N7002K-HF
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Gate Charge Waveform
4
Q
VG
4.5V
QGS QGD
QG
Charge
0
4
8
12
16
0 0.5 1 1.5 2
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
ID=450mA
VDS =30V
VDS =40V
V DS =50V
1
10
100
1 5 9 13 17 21 25 29
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.001
0.010
0.100
1.000
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
1ms
10ms
100ms
1s
DC
0.0
0.2
0.4
0.6
0.8
1.0
0246
VGS , Gate-to-Source Voltage (V)
ID , Drain Current (A)
Tj=150oCTj=25oC
VDS =5V
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja = 400℃/W
tT
