DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D130 BZV85 series Voltage regulator diodes Product data sheet Supersedes data of 1996 Apr 26 1999 May 11 NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series FEATURES DESCRIPTION * Total power dissipation: max. 1.3 W Medium-power voltage regulator diodes in hermetically sealed leaded glass SOD66 (DO-41) packages. The diodes are available in the normalized E24 approx. 5% tolerance range. The series consists of 33 types with nominal working voltages from 3.6 to 75 V (BZV85-C3V6 to BZV85-C75). * Tolerance series: approx. 5% * Working voltage range: nom. 3.6 to 75 V (E24 range) * Non-repetitive peak reverse power dissipation: max. 60 W. handbook, halfpage k a MAM241 The diodes are type branded. APPLICATIONS * Stabilization purposes. Fig.1 Simplified outline (SOD66; DO-41) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER IF continuous forward current IZSM non-repetitive peak reverse current CONDITIONS MIN. - MAX. UNIT 500 mA tp = 100 s; square wave; Tj = 25 C prior to surge; see Fig.3 see Table "Per type" tp = 10 ms; half sinewave; Tj = 25 C prior to surge see Table "Per type" Tamb = 25 C; lead length 10 mm; note 1 - 1 W note 2 - 1.3 W tp = 100 s; square wave; Tj = 25 C prior to surge - 60 W Ptot total power dissipation PZSM non-repetitive peak reverse power dissipation Tstg storage temperature -65 +200 C Tj junction temperature - 200 C Notes 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. 2. If the leads are kept at Ttp = 55 C at 4 mm from body. ELECTRICAL CHARACTERISTICS Total series Tj = 25 C unless otherwise specified. SYMBOL VF 1999 May 11 PARAMETER forward voltage CONDITIONS IF = 50 mA; see Fig.4 2 MAX. UNIT 1 V DIFFERENTIAL RESISTANCE rdif () at IZtest TEMP. COEFF. TEST DIODE CAP. SZ (mV/K) CURRENT Cd (pF) IZtest (mA) at f = 1 MHz; at IZtest see Figs 5 and 6 VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (A) MIN. MAX. 3V6 3.4 3.8 3V9 3.7 4V3 4V7 MAX. MAX. VR (V) MAX. NON-REPETITIVE PEAK REVERSE CURRENT IZSM at tp = 100 s; Tamb = 25 C at tp = 10 ms; Tamb = 25 C MAX. (A) MAX. (mA) 3 15 -3.5 -1.0 60 450 50 1.0 8.0 2 000 4.1 15 -3.5 -1.0 60 450 10 1.0 8.0 1 950 4.0 4.6 13 -2.7 0 50 450 5 1.0 8.0 1 850 4.4 5.0 13 -2.0 +0.7 45 300 3 1.0 8.0 1 800 5V1 4.8 5.4 10 -0.5 +2.2 45 300 3 2.0 8.0 1 750 5V6 5.2 6.0 7 0 2.7 45 300 2 2.0 8.0 1 700 6V2 5.8 6.6 4 0.6 3.6 35 200 2 3.0 7.0 1 620 6V8 6.4 7.2 3.5 1.3 4.3 35 200 2 4.0 7.0 1 550 7V5 7.0 7.9 3 2.5 5.5 35 150 1 4.5 5.0 1 500 8V2 7.7 8.7 5 3.1 6.1 25 150 0.7 5.0 5.0 1 400 9V1 8.5 9.6 5 3.8 7.2 25 150 0.7 6.5 4.0 1 340 10 9.4 10.6 8 4.7 8.5 25 90 0.2 7.0 4.0 1 200 11 10.4 11.6 10 5.3 9.3 20 85 0.2 7.7 3.0 1100 12 11.4 12.7 10 6.3 10.8 20 85 0.2 8.4 3.0 1 000 13 12.4 14.1 10 7.4 12.0 20 80 0.2 9.1 3.0 900 15 13.8 15.6 15 8.9 13.6 15 75 0.05 10.5 2.5 760 16 15.3 17.1 15 10.7 15.4 15 75 0.05 11.0 1.75 700 18 16.8 19.1 20 11.8 17.1 15 70 0.05 12.5 1.75 600 20 18.8 21.2 24 13.6 19.1 10 60 0.05 14.0 1.75 540 22 20.8 23.3 25 16.6 22.1 10 60 0.05 15.5 1.5 500 24 22.8 25.6 30 18.3 24.3 10 55 0.05 17 1.5 450 27 25.1 28.9 40 20.1 27.5 8 50 0.05 19 1.2 400 30 28.0 32.0 45 22.4 32.0 8 50 0.05 21 1.2 380 Product data sheet MAX. BZV85 series MIN. NXP Semiconductors BZV85CXXX WORKING VOLTAGE VZ (V) at IZtest Voltage regulator diodes 1999 May 11 Per type Tj = 25 C unless otherwise specified. TEST DIODE CAP. TEMP. COEFF. CURRENT Cd (pF) SZ (mV/K) IZtest (mA) at f = 1 MHz; at IZtest see Figs 5 and 6 VR = 0 V REVERSE CURRENT at REVERSE VOLTAGE IR (A) MIN. MAX. 33 31.0 35.0 36 34.0 38.0 39 37.0 43 MAX. 4 MIN. MAX. 45 24.8 35.0 50 27.2 39.9 41.0 60 29.6 40.0 46.0 75 47 44.0 50.0 51 48.0 54.0 56 52.0 62 68 75 VR (V) NON-REPETITIVE PEAK REVERSE CURRENT IZSM at tp = 100 s; Tamb = 25 C at tp = 10 ms; Tamb = 25 C MAX. (A) MAX. (mA) MAX. MAX. 8 45 0.05 23 1.0 350 8 45 0.05 25 0.9 320 43.0 6 45 0.05 27 0.8 296 34.0 48.3 6 40 0.05 30 0.7 270 100 37.4 52.5 4 40 0.05 33 0.6 246 125 40.8 56.5 4 40 0.05 36 0.5 226 60.0 150 46.8 63.0 4 40 0.05 39 0.4 208 58.0 66.0 175 52.2 72.5 4 35 0.05 43 0.4 186 64.0 72.0 200 60.5 81.0 4 35 0.05 48 0.35 171 70.0 80.0 225 66.5 88.0 4 35 0.05 53 0.3 161 NXP Semiconductors DIFFERENTIAL RESISTANCE rdif () at IZtest Voltage regulator diodes 1999 May 11 BZV85CXXX WORKING VOLTAGE VZ (V) at IZtest Product data sheet BZV85 series NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point lead length 4 mm; see Fig.2 110 K/W Rth j-a thermal resistance from junction to ambient lead length10 mm; note 1 175 K/W Note 1. Device mounted on a printed circuit-board with 1 cm2 copper area per lead. GRAPHICAL DATA MBG929 103 handbook, full pagewidth Rth j-tp (K/W) 102 =1 0.75 0.50 0.33 0.20 10 0.10 0.05 0.02 0.01 0 1 10-2 10-1 tp T 1 10 102 103 Fig.2 Thermal resistance from junction to tie-point with a lead length of 4 mm. 1999 May 11 5 = tp T tp (ms) 104 NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series MBG925 300 handbook, halfpage MBG802 102 handbook, halfpage IF (mA) IZSM (A) 200 (1) 10 (1) (2) 100 (2) 1 0 0 10-1 1 10 VZnom (V) 0.5 1.0 VF (V) 102 (1) Tj = 200 C. (2) Tj = 25 C. (1) tp = 10 s; half sinewave; Tamb = 25 C. (2) tp = 10 ms; half sinewave; Tamb = 25 C. Fig.3 Fig.4 Forward current as a function of forward voltage; typical values. Non-repetitive peak reverse current as a function of the nominal working voltage. MBG926 SZ (mV/K) MBG800 100 SZ (mV/K) 10 handbook, halfpage handbook, halfpage (1) 80 10 (2) 9V1 5 8V2 7V5 6V8 60 5V6 5V1 0 (3) 6V2 40 4V7 4V3 20 3V6 3V9 -5 0 0 25 IZ (mA) 1 50 BZV85-C3V6 to C10. Tj = 25 to 150 C. For types above 7.5 V the temperature coefficient is independent of current; see Table "Per type". IZ = IZtest; Tj = 25 to 150 C. (1) Maximum values. (2) Typical values. (3) Minimum values. Fig.5 Fig.6 Temperature coefficient as a function of working current; typical values. 1999 May 11 6 10 VZnom (V) 102 Temperature coefficient as a function of nominal working voltage. NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series PACKAGE OUTLINE Hermetically sealed glass package; axial leaded; 2 leads SOD66 (1) k a b D G1 L L DIMENSIONS (mm are the original dimensions) UNIT b max. D max. G1 max. L min. mm 0.81 2.6 4.8 28 0 2 4 mm scale Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD66 1999 May 11 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-20 DO-41 7 NXP Semiconductors Product data sheet Voltage regulator diodes BZV85 series DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1. Please consult the most recently issued document before initiating or completing a design. 2. The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com. DISCLAIMERS above those given in the Characteristics sections of this document is not implied. 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Limiting values Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions 1999 May 11 8 NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com (c) NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115002/00/02/pp9 Date of release: 1999 May 11 Document order number: 9397 750 05929