Semiconductor Group 1 Mar-29-1996
BSM 75 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
V
CE
I
CPackage Ordering Code
BSM 75 GAL 120 DN2 1200V 105A HALF BRIDGE GAL 1 C67076-A2011-A70
Maximum Ratings
Parameter Symbol Values Unit
Collector-emitter voltage
V
CE 1200 V
Collector-gate voltage
R
GE = 20 kΩ
V
CGR 1200
Gate-emitter voltage
V
GE ± 20
DC collector current
T
C = 25 °C
T
C = 80 °C
I
C
75
105 A
Pulsed collector current,
t
p = 1 ms
T
C = 25 °C
T
C = 80 °C
I
Cpuls
150
210
Power dissipation per IGBT
T
C = 25 °C
P
tot 625 W
Chip temperature
T
j+ 150 °C
Storage temperature
T
stg -55 ... + 150
Thermal resistance, chip case
R
thJC ≤ 0.2 K/W
Diode thermal resistance, chip case
R
thJCD≤ 0.5
Diode thermal resistance, chip-case,chopper
R
THJCDC ≤ 0.36
Insulation test voltage,
t
= 1min.
V
is 2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F -
IEC climatic category, DIN IEC 68-1 - 55 / 150 / 56
Semiconductor Group 2 Mar-29-1996
BSM 75 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Gate threshold voltage
V
GE =
V
CE,
I
C = 2 mA
V
GE(th) 4.5 5.5 6.5 V
Collector-emitter saturation voltage
V
GE = 15 V,
I
C = 75 A,
T
j = 25 °C
V
GE = 15 V,
I
C = 75 A,
T
j = 125 °C
V
CE(sat)
-
- 3.1
2.5 3.7
3
Zero gate voltage collector current
V
CE = 1200 V,
V
GE = 0 V,
T
j = 25 °C
V
CE = 1200 V,
V
GE = 0 V,
T
j = 125 °C
I
CES
-
- 4
1 -
1.4 mA
Gate-emitter leakage current
V
GE = 20 V,
V
CE = 0 V
I
GES - - 320 nA
AC Characteristics
Transconductance
V
CE = 20 V,
I
C = 75 A
g
fs 31 - - S
Input capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
iss - 5.5 - nF
Output capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
oss - 0.8 -
Reverse transfer capacitance
V
CE = 25 V,
V
GE = 0 V,
f
= 1 MHz
C
rss - 0.3 -
Semiconductor Group 3 Mar-29-1996
BSM 75 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Switching Characteristics, Inductive Load at
T
j = 125 °C
Turn-on delay time
V
CC = 600 V,
V
GE = 15 V,
I
C = 75 A
R
Gon = 15 Ω
t
d(on)
- 30 60
ns
Rise time
V
CC = 600 V,
V
GE = 15 V,
I
C = 75 A
R
Gon = 15 Ω
t
r
- 70 140
Turn-off delay time
V
CC = 600 V,
V
GE = -15 V,
I
C = 75 A
R
Goff = 15 Ω
t
d(off)
- 450 600
Fall time
V
CC = 600 V,
V
GE = -15 V,
I
C = 75 A
R
Goff = 15 Ω
t
f
- 70 100
Free-Wheel Diode
Diode forward voltage
I
F = 75 A,
V
GE = 0 V,
T
j = 25 °C
I
F = 75 A,
V
GE = 0 V,
T
j = 125 °C
V
F
-
- 1.8
2.3 -
2.8 V
Reverse recovery time
I
F = 75 A,
V
R = -600 V,
V
GE = 0 V
d
iF/
dt
= -900 A/µs,
T
j = 125 °C
t
rr
- 0.125 -
µs
Reverse recovery charge
I
F = 75 A,
V
R = -600 V,
V
GE = 0 V
d
iF/
dt
= -900 A/µs
T
j = 25 °C
T
j = 125 °C
Q
rr
-
- 12
3.2 -
-
µC
Semiconductor Group 4 Mar-29-1996
BSM 75 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Chopper Diode
Chopper diode forward voltage
I
FC = 100 A,
V
GE = 0 V,
T
j = 25 °C
I
FC = 100 A,
V
GE = 0 V,
T
j = 125 °C
V
FC
-
- 1.8
2.3 -
2.8 V
Reverse recovery time, chopper
I
FC = 100 A,
V
R = -600 V,
V
GE = 0 V
d
iF/
dt
= -1000 A/µs,
T
j = 125 °C
t
rrC
- 0.125 -
µs
Reverse recovery charge, chopper
I
FC = 100 A,
V
R = -600 V,
V
GE = 0 V
d
iF/
dt
= -1000 A/µs
T
j = 25 °C
T
j = 125 °C
Q
rrC
-
- 14
4 -
-
µC
BSM 75 GAL 120 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 250 g
