BSR14_NL - Fairchild Semiconductor

1997 Fairchild Semiconductor Corporation

BSR14

NPN General Purpose Amplifier

This device is for use as a medium power amplifier and switch

requiring collector currents up to 500 mA. Sourced from Process

19. See BCW65C for characteristics.

SOT-23

Mark: U8

Absolute Maximum Ratings* T A = 25°C unless otherwise noted

*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Thermal Characteristics T A = 25°C unless otherwise noted

Symbol Characteristic Max Units

*BSR14

PDTotal D evice Dissipation

Derate above 25°C350

2.8 mW

mW/°C

RθJA Thermal Resistance, Junctio n to Ambien t 357 °C/W

Symbol Parameter Value Units

VCEO Collector-Em itter Vol t age 40 V

VCBO Collector-Base Voltage 75 V

VEBO Emitter-Base Voltage 6.0 V

ICCollector Current - Continuo us 800 mA

TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C

*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.

Electrical Characteristics T A = 25°C unless otherwise noted

OFF CHARACTERISTICS

Symbol Parameter Test Conditions Min Max Units

V(BR)CEO Collector-Emitter Break down

Voltage IC = 10 µA, IB = 0 75 V

V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 40 V

V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 V

ICBO Collector-Cutoff Current VCB = 60 V

VCB = 60 V, TA = 150°C10

10 nA

µA

ICEX Collector-Cutoff Current VCE = 60 V, VEB = 3.0 V 10 nA

IBEX Reverse Base Current VCE = 60 V, VEB = 3.0 V 20 nA

IEBO Emitter-Cutoff Current VEB = 3.0 V, IC = 0 15 nA

ON CHARACTERISTICS

hFE DC Current Gain IC = 0.1 mA, VCE = 10 V

IC = 1.0 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V

IC = 150 mA, VCE = 10 V

IC = 150 mA, VCE = 1.0 V

IC = 500 mA, VCE = 10 V

100

300

VCE(sat)Collecto r-Emitter Saturation Voltage IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA 0.3

1.0 V

VBE(sat)Base-Emitter Saturation Vo ltage IC = 150 mA, IB = 15 mA

IC = 500 mA, IB = 50 mA 0.6 1.2

2.0 V

SMALL SIGNAL CHARACTERISTICS

fTCurrent Gain - Bandwidth Product IC = 20 mA , VCE = 20,

f = 100 mHz 300 MHz

CCB Collector-Bas e Capacitance VCB= 10V, I E = 0, f = 1.0 MHz 8.0 pF

hie Input Impedance VCE=10V,IC=1.0 mA,f=1.0 kHz 2.0 8.0 kΩ

hfe Smal l -S i gnal Current Gai n VCE=10V,IC=1.0 mA,f=1.0 kHz 50 300

hoe Output Admi ttance VCE=10V,IC=1.0 mA,f=1.0 kHz 5 35 µS

SWITCHING CHARACTERISTICS

tdDelay Tim e VCC = 30 V, V BE(OFF) = 0.5 V, 10 ns

trRise Ti me IC = 150 mA, IB1 = 15 mA 25 ns

tsStorage Time VCC = 30 V, IC = 150 m A , 225 ns

tfFall Time IB1 = IB2 = 15 m A 60 ns

Spice Model

NPN (Is=14.34f Xti=3 Eg=1.1 1 V af=74.03 Bf=255.9 Ne=1.307 Ise=14.34f Ikf=.2847 Xtb=1.5 Br=6.092 Nc=2 Isc=0

Ikr=0 Rc=1 Cjc=7.306p Mjc=.3416 Vjc=.75 Fc=.5 Cje=22.01p Mje=.377 Vje=.75 Tr=46.91n Tf=411.1p Itf=.6

Vtf=1.7 Xtf=3 Rb=10)

NPN General Purpose Amplifier

(continued)

BSR14

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant into

the body, or (b) support or sustain life, or (c) whose

failure to perform when properly used in accordance

with instructions for use provided in the labeling, can be

reasonably expected to result in significant injury to the

user.

2. A critical component is any component of a life

support device or system whose failure to perform can

be reasonably expected to cause the failure of the life

support device or system, or to affect its safety or

effectiveness.

PRODUCT ST A TUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information

Preliminary

No Identification Needed

Obsolete

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.

Formative or

In Design

First Production

Full Production

Not In Production

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER

NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD

DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICA TION OR USE OF ANY PRODUCT

OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT

RIGHTS, NOR THE RIGHTS OF OTHERS.

PowerTrench

QFET™

QS™

QT Optoelectronics™

Quiet Series™

SILENT SWITCHER

SMART ST ART™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

FASTr™

GlobalOptoisolator™

GTO™

HiSeC™

ISOPLANAR™

MICROWIRE™

OPTOLOGIC™

OPTOPLANAR™

PACMAN™

POP™

Rev . G



ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

DOME™

E2CMOSTM

EnSignaTM

FACT™

F ACT Quiet Series™

FAST

SyncFET™

TinyLogic™

UHC™

VCX™

