b> CQew + LINE No. Vv - - #- SYMBOLS & CODES COMMON TO MORE THAN ONE TECH New Type Revised Specifications Non-JEDEC type manufactured outside U'S.A. TYPE No. SYMBOLS & CODES EXPLAINED Switching type, also listed in Section 12 Chopper, also listed in Section 13, Category 10 These types also included elsewhere with other characteristics. See Type No. Cross Index for alternate line number. Radiation Resistant Devices, also listed in Section 13, Category 13. ICAL SECTION wo fa, Gain bandwidth product (f-) Maximum frequency of oscillation Figure of merit (frequency for unity power gain) Minimum Maximum I Charge storage time constant Stored base charge picocoulomb Total switching time Ton = t + ty Typical Value ee Tort = ts + ty Typical Value Ton + Tote =td+ tr + tf + ts LINE No. TYPE No. [2] RISE [DELAY TIME | TIME STRUCTURE (Atl Sections A Alloy Except 6 & 7} AN Annular D Diffused or drift DM - Diffused mesa E Epitaxial EA -~ Epitaxial annular EM Epitaxial mesa F Fused G Grown GA Gallium Arsenide H Hometaxial MA -- Mico alloy MD Micro alloy diffused ME - Mesa MOS Metal oxide silicon PA, Precision alloy PC Point contact PD Precision alloy diffused PE Planar epitaxial PL Planar s Surface barrier to Matched pair ~ Switching, other uses Chopper, other uses Noise figure 8db or below Plastic package ~ Overlay * THESE TYPES ALSO INCLUDED ELSEWHERE WITH OTHER CHARACTERISTICS SEE TYPE NO. CROSS INDEX FOR ADDITIONAL PAGE & LINE NO. Pulsed Minimum Maximum Available to selected range narrower than indicated - Yes in millimho (FETs only). Bias values are Vos & 'b . | Cob SAT. xX Tt - "bp rbb PP +him vw 24 NP Cob |N-NPN i A|TEMP: T OWG. No. ormr moo Ge Germanium Si Siticon Tetrode NPN or N Channel PNP or P Channel Field Effect Transistor Radiation Resistant Device (See above also) D With infinite heat sink Following symbols indicate temperature at which derating starts: f - 40c 70 * ~ 45C $- 100C or greater # 50C @ 80C ~ 60C A- Pulsed A ~- Maximum $ ~ Cob - Ron (FETs only) # Pulsed - Coes (FET's only} SISTORS A Ambient Cc Case J Junction Ss Storage DESCRIPTION a 1 Avalanche Mode 10 - 2 Bi-directional 11 - Unmatched Ge Germanium 3 Field Effect Composite (Dual) Si Silicon 4 Hook Collector 12 Cryogenic 5 ~ Complementary 13 Radiation Symmetry (PNP & Resistant Devices NPN) Matched Pair 14 Pressure Sensitive N -~ NPN or N Channel See TECHNICAL TERM DEFINITIONS Section | 6 Matched Pair 15 Transistor chips P PNP or P Channel 7 Phototransistor 16 Darlington (See above also) 8 - Tetrode 17 Microwave 9 Unijunction: NN-type emitter (P-type Base) PP-type emitter (N-type Base)IN ORDER OF (1) CATEGORY & (2) TYPE No. 13. MISCELLANEOUS TRANSISTORS 12 1|CATEGORY | MIDWG #/L C LINE TYPE UISTRUC- A|Y200 IE 0 DESCRIPTION No. No. S| TURE T| s/a AD E T0200 (DE Ser. SA2738* 6IN Si |L2t Pt.6W:hFET7/2-.90 min:VBE(1-2)-1.5mV max;AVBE(1-2)/AT-auV/deg.C. 2 |SA2739* 6IN Si jL2t Pt.6W-hFE1/2-.90 min;VBE(1-2)-2.5mV max;AVBE(1-2)/AT-5uV/deg.C. 3 |SD5010* 6 |P-MOS| Si_{L53 Pt 325mW(each side) at 25C Case temp.yfs_ 1/2 800m min;VGS(1-2) 70mv. 4 D5011* 6 /P-MOSI Si jL54 Pt 325mW(each side) at 25C Case temp:yfs 1/2 800m min;VGS(1-2) 70mV. 5 $D5012* 6 |P-MOSZ Si |L53 Pt 325mW(each side) at 25C Case tempiyfs 1/2 800m min:VGS(1-2) 70mvV. 6 _|SD5013* 6 (P-MOS Si_|L54 Pt 325mWieach side} at 25C Case tempiyfs_1/2 800m min,VGS(1-2) 70mv. 7 (jSDS014* 6 |/P-MOS' Si [L53 Pt-325mWi(each side) at 25C case temp.yfs 1/2 .8Omin;VGS 1/2-200mV max. 8 |SD5015* 6|P-MOSd /Si |L54 Pt-325mW(each side) at 25C case temp:yfs 1/2 .8Omin:VGS 1/2-200mV max. g jSD050* 6IN-MOSZ [Si _|L53 Pt-325mWieach side) at 25C casetempiyfs 1/2 .80min;VGS 1/2-200mV_ max. 10 SD505 1* 6IN-MOSIA [Si [L54 Pt-325mWieach side) at 25C case temp:yfs 1/2 .8Omin;VGS 1/2-200mV max. 11# |SL360 6 |NPN Si |L44a BVCBO 15V min;BVCEO 8V min:hFE 30 min:VCE(sat) 400mV max;ic 10uA. 12. |SMT100 6 IP Si |Li7a BVCEO-45V:IC-30mA max:Pt-.6OW:VBE(1-2}-20mV;Cob-6.Opf. 13. [SMT101 6iP Si [L17a BVCEO-45V;IC-30mA max;Pt-.60W;VBE(1-2)-20mV;Cob-6.0pf. 14 |SMT102 6 iP Si |L17a BVCEO-45V;IC-30mA max;Pt-.6OW;VBE(1-2)-10mV:hFE 1/hFE2-.80 min. 15 |SMT103 6/P Si [L17a BVCEO-45ViIC-30mA_max;Pt-.6OW;VBE(1-2)-1OmVhFE 1/hFE2-.80 min. 16 {SMT104 6(P Si [L17a BVCEO-45V:IC-30mA max;Pt-.6OW;VBE(1-2)-5.OmV;hFE 1/hFE2-.90 min. 17) |SMT105 6|P Si |L17a BVCEO-45V.IC-30mA max;Pt-.60W;VBE{1-2)-5.OmV:hFE 1/hFE2-.80 min. 18 |SP8300 6 IN-PL Si_|L8a Pc-. 30W;BVCBO-40V;hFE-30_ min/IC-10mAJCBO-.O25uA max. 19 |/SP8302 6 (N-PL Si /L8a Pc- SOW:BVCBO-100V:hFE-75 min/IC-10mA;ICBO-.025mA max. 20 |SP8303 6 |N-PL Si |L8a Pc-. SOW:BVCBO-1tO00V;hFE-35 min/IC-10mA;ICBO-.025mA max. 21 SP8304 6 |N-PL Si jL8a Pc-. 30W;BVCBO-40V;hFE-30 min/IC-10mA;ICBO-.025uA max. 22 |SP8307 6 |P-PL Si /L8a Pc-.30W;BVCBO-20V;hFE-35 min/IC-10mA;ICBO-.01uA max. 23 ~|SP8309 6 |N-PL Si |L8a Pc-.5O0W;BVCBO-75V;hFE-40 min/IC-150mA;ICBO-.01uA max. 24 _\SP8310 6 |N-PLO Si (L8a Pc- SOW; BVCBO-75V:hFE-100 min/IC- 15OmAICBO-.01uA max. 25 =[SP8311 6 |N-PL Si |L8a Pc-.5OW;BVCBO-120V;hFE-40 min/IC-150mA;ICBO-.01uA max. 26 (SP10801 6 JN-DPL Si |TO89 hFE1/hFE2-0.8minA VBE1-VBE2-1.6mV max,NF-4.0db max 27__|SP10810 6 |P-DPE Si_|TO89 hFE1/hFE2-0,.8minA VBE1-VBE2-4.0mV_max,hFE-35min at 10mA-1.0V. 28 = |SU2074* 6IN Si [L21 Pt-300mW; gm1/2-.95 min:VGS(1-2)-15mV max;AVGS(1-2)/AT-10uV/Deg.C. 29 |SU2075* 6\N Si |L21 Pt-300mW; gm1/2-.95 min; VGS(1-2)-15mV_ max;AVGS(1-2)/AT-15uV/Deg.C. 30__ |SU2076* 6 IN Si_|L21 Pt-250mW; gm1/2..95 min; VGS(1-2)-15mV_max;AVGS(1-2)/AT-10uV/Deg.C. 1 $U2077* 6 iN Si (121 Pt-250mW; gm1/2-.95 min;VGS(1-2)-15mV max;AVGS(1-2)/AT-25uV/Deg.C. 32 |$U2078* 6 IN Si |L21 Pt-250mW:gm 1/2-.95min;VGS(1-2)-15mV_ max:AVGS(1-2)/AT-35uV/Deg. C. 33___ |[SU2079* 6 IN Si_|t21 Pt-250mW; gm1/2-.95 min:VGS(1-2)-15mV_max:AVGS(1-2)/AT-60uV/Deg.C. 34# |TA-M93 6 NPN TOS Dual 2N930;10% hFE match;5.0mV VBE match;hFE at 10uA-50 min. 35 |U205* 6IN Si |TO71 Pt-.30W:!G(1-2)-5.0nA max;VGS(1-2)-5.OmV max:gfs1/2-.95 min. 36 |U206* 6IN Si |TO71 Pt. 3OWIG(1-2)-5.OnA max;VGS(1-2)-10mV_maxigfs1/2-.95 min. 37 [U207* 6/N Si |/TO71 Pt-. 30W;IG(1-2)-5.0nA max;VGS(1-2)-15mV maxigfs1/2-.95 min. 38 /|UD1000 6 |P-PE Si |L38 Pt(Both Sides)-200mW;BVCBO-50V;Vo(1-2)-100uV max:IB and IC-20mA. 39 |UD2000 6 |P-PE Si_|L2n Pt-400mW,BVCBO-50V;VBE1/2-5mV_max:hFE1/2-.90 min: AVBE1-2-10uV/degC 40 |JAN1N4378 7 INA Si [X69 Pt-SOmW;ID-10nAmax;IL-9.0mAmax;tr-1.5uSmax;VCE-50V:VEC-8V. 41 2N318 7 |P-A Ge Pc-SOmW; VCE-12V max; Sens.-25uA/ft can;fab-750kc. 42 |2N577 7|P Ge Pt-25mW; IC-10mA; I