1, MIL-S- 19500/208B Ly Ausust 1967 SUPERSEDING ~ MIL-S-19500/208A (EL) 23 October 1964 (See 6. 2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER SCOPE TYPES 2N1487, 2N1488, 2N1489, AND 2N1490 This specification is mandatory for use by all Depart- ments and Agencies of the Department of Defense. 1,1 Scope. This specification covers the detail requirements for a silicon, NPN, high-power transistor, 1,2 Physical dimensions. See figure 1 (TO-3). 1.3 Maximum ratings. Pol VcoBo VEBO VcEO VcEXx Ic | Ip | Tatg | 95-c | Ty Te 25C | 2N1487 | 2N1488 2N1487 |2N1488 | 2N1487 | 2N1488 Cc 2N1489 | 2N1490 2N1489 | 2N1490 | 2N1489 | 2N1490 w | vac | vde | vde | vac | vde | vde | vde |Ade}Ade} Se |*c/w] c 75 60 | 100 | 10 40 55 60 100 | 6 | 3 |-65 to| 2.33 [+200 +200 1/ Derate linearly 0.429 W/C for To >25C, 1.4 Primary electrical characteristics. / hppl Vor sat) W/ Vee | 1 {nto Vor= 4.0 Vac Ic = 1.5 Adc Veg=4.0Vde| CBO EBO Wop = 12 Vde Vcp = 30 Vde|VEp = 10 Vd Ig = 1.5 Ade |Ip = 300 mAdelIp= 100 mAde! Ic = 1.5 Adc | CB VEB lig = 100mAdd 2N1487|2N1489| 2N1487 2N1489 | 2N1487|2N1489 2N1488|2N1490| 2N1488 2N1490 :!2N1488|2N1490 Vdc Vde vde | vde Adc Adc ke Min} 15 | 25 --- --- a --- --- 500 Max| 45 | 75 3,0 1, 3.0 | 2. 25 25 -~- 1/ Pulsed (see 4. 4. 1). 2. APPLICABLE DOCUMENTS 2.1 The following documents, of the issue in effect on date of invitation for bids or request for proposal, form a part of the specification to the extent specified herein. SPECIFICATION MILITARY MIL-S-19500 - Semiconductor Devices, General Spectfication for. FSC 5961MIL-S-19500/208B STANDA s MILITARY MIL-STD-202 - Test Methods for Electronic and Electrical Component Parts. MIL-STD-730 - Test Methods for Semiconductor Devices. (Copies of specifications, standards, drawings, and publications required by suppliers in connection mete ee neta es 2 fen AR Cen neste Bett estte cae sc Atusets with Spcisic pr ocurement functions snould be obtained rum he procurin 1g activity or a5 directed by ihe contracting officer. ) 2 DONIYp raccarra Ve EWE VAR wa 3.1 General. Requirements shall be in accordance with MIL-S-19500, and as specified herein. 3.2 Abbreviations, symbols, and definitions. The abbreviations, symbols, and definitions used herein are defined in MIL-S- 19500. 3.3 Design, construction, and physical dimensions. The transistors shall be of the design, con- struction, and phySical dimensions shown on figure 1. .4 Performance characteristics. Performance characteristics shall be as specified in tables I, IL hoa omtinn of the manufacturer: ane Cpeien 2 wit Mesiliat 4. QUALI ASSURANCE PROVISIONS 4.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-S- 19500, and ae aoe iPrts t as specified herein, 4,2 Qualification inspection. Qualification inspection shall consist of the examinations and tests specified in tables L i, and mu. 4,3 Quality conformance inspection. Quality conformance inspection shall consist of groups A, B, and M inenartinnc 1 Group A inspection. Group A inspection shall consist of the examinations and tests specified e 4.3.3 Group C inspection. Group C inspection shall consist of the examinations and tests specified in table I. This inspection shall be conducted on the initial lot and thereafter every 6 months during production. 4.3.4 Group B and group C life-test samples. Samples that have been subjected to group B, 340-hours life-test, may be continued on test to 1000-hours in order to satisfy group C life-test requirements. These samples shall be predesignated, and shall remain subjected to the group C 1, 000-hour acceptance evaluation after they have passed the group B, 340-hour acceptance criteria. The cumulative total of failures found during 340-hour test and during the subsequent interval up to 1, 000 hours shall be computed an 1 NAAN_ LA ma mlb in aw. dy vyu- Our acceptance Ws ALUA Ake Ao _8 DIA. re in ~S C } C oY) 7 | | _SEATING | 3 3 PLANE | | 5b i | {___ 7 U EMITTER | /+ G> | [fhe bia 'N rH | NWwZTT ; | L RAD TT ON H\, fo ~M DIA. BASE Y/Y | \K RAD. DIMENSIONS N INCHES MILLIMETERS Y LTR MIN MAY MIN MAX E NOTES: A 875 22.23 1. Metric equivalents (to the nearest .01 mm) ore Bi .250 456. 6.35] 11.43 given for general information only and are based C 135 3.43 upon | inch = 25,4 mm. == = 2. This dimension should be measured at points D312 _ EL : -050 (1.27 mm) to .055 (1.40 mm) below seating E | .205 1225 | 5.21 | 9.74 plone. When gage is not used, measurement F | .420 -440 | 10.67 |: 11.18 , ill be made at seating plane. GJ 4177 | 1.197 | 29.90 | 30.40 | 4, Collector shell be electrically connected to HI 665 675 | 16.64 | 17.15 | 2 the case. : J | .038 | .043 97 | 1.09 | 3 K 0525 13.34 L -188 4.78] | MI 4151 161 3.84} 4.09 FIGURE 1. Physica! dimensions of transistor types 2N1487, 2N1488, 2N1489 and 2N1490 (TO-3). toeMIL-S-19500/208B 4.4 Methods of examination and test, Methods of examination and test shall be as specified in tables 1, I, and im. 4.4.1 Pulse measurements. Conditions for pulse measurenient shall be as Specified in section 4 of MIL-STD-750, 4,4,2 Interval for end-point test measurements, End-point tests shail be compieied within the foi- lowing time limitations, after completion of the last test in the subgroup (2) Qualification inspection: within 24 hours. (b) Quality conformance inspection: within 96 hours. TABLE I. Group A inspection MIL-STD-750 Limits Examination or test _ 1 LTPD Method | Details Symbol | Min Max | Unit Subgroup } 10 Visual and mechanical 2071 --- --- --- | --- examination Subgroup 2 5 Breakdown voltage, collector 3011 |Bias cond. D;I= 100 mAdc; BVcEO to emitter puised (see 4.4, i) 2N1487, 2N1489 40 --- | Vde 2N1488, 2N1490 55 --- | Vde Breakdown voltage, collector | 3001 j|Bias cond. D;I= 200 wAde BVcpo to base 2N1487, 2N1489 60 --- | Vde 2N1488, 2N1490 100 --- | Vde Breakadown voltage, collector; $611 {Bias cond. A; VeRs 1.5 Vde; BVcEx to emitter Io = 0.5 mAdc 2N1487, 2N1489 60 --- | Vde 2N1488, 2N1490 | 1900 --- |Vde Collector to base cutoff 3036 Bias cond. D; Vop* 30 Vde lego --- 25 pAdc current Emitter to base cutoff current) 3061 | Bias cond, D; Vpp= 10 Vde I~epo | 7-77 25 pAdc i Subgroup 3 i ! 5 i Forward-current transfer 3076 'Vopr= 4.0Vde: Ic= 1.5 Ade; herp ratio jpuised (see 4. 4, ij 2N1487, 2N1488 : 15 45 | --- t 2N1489, 2N1490 | 25 75 | n~e- | , menaMIL-S- 19500/208B ay ABLE 1. Group A inspection - Continued MIL-STD-750 | Limits Examination or test - mo mmr ee 1 DP BD ~ 7 Method Details Symbo! | Min Max | Unit Subgroup 3 - Continued Coliectur to emitter voltage 3071 | Vor lsat) (saturated) \ | 2Ni487, 2N1488 i Iq= 1.5 Ade: Ig = 300 mAde; --7 | 3.01 Vde | pulsed (see 4. 4.1) 2N1489, 2N1490 | Ig = 1.5 Adc; ip = 100 mAde; --- | 10] vde pulsed (see 4. 4. 1) Base emitter voltage 3066 Test cond. B, VCE = VBE (nonsaturated) | 4.0 Vdc; Ic = 1.5 Aac; | pulsed (see 4.4.1) 2N1487, 2N1488 : --- ' 3.0 Vde 2N1489, 2Ni490 : oc 2.0 Vdc Subgroup 4 i 16 | i I Small-signal short-circuit 3301 Vor= 12 Vdc; Io= 100 mAdc fnep 500; --- | ke forward-current transfer- | \ | ratio cutoff frequency ' i : i - . < = an 1 Open- circuit output | 3236 Vop= 10 Vdc; Ip= 0; ' Cobo oe 700 opi Capacitance : "400 kHz < {< 1 MHZ / | Pulse response $251 Test cond. A; Voc= 12 Vdc; ton+toff --- 25 | ywsec Ip') = Ipl@) = 150 made; : ay | Ip*/ = 300 mAdc; : . : Rot 7.8 ohms ' Subgroup 5 15 YP High-temperature operation: Tazt 175C Collector to base cutoff 3036 Bias cond. D; Vog= 30 Vdc lopo --- 1.0: mAdc: current Low-temperature operation: | Ta = -55C | | | | ' Forward-curreni transfer | 3076 'Vop = 4.0de; Ice 1.8 Ade; : hee ' ratio pulsed (see 4. 4.1) 2Ni487, 2N1488 1900 wee eee 2N1489, 2N1490 15 ose eee Li SSMIL-S-19500.208B TABLE II. Group B inspection End points: (Same as for subgroun L Fr 2) MIL-STD-756 Limits Examination or test 7 LTPD = soe nd Method ! Details Symbol | Min Max | Unit Subgroup 1 20 Physical dimensions 2066 | (See figure 1) --- --- --- | --- Subgroup 2 15 Solderability 2026 |Omit aging; dweii time = -+- = --- |] --- 10 +1 sec Thermal shock (temperature 1051 !Test cond. C --- --- w-- | --- cycling) Thermai shock (glass strain) 10656 (Test cond. B --- wae --- | --- Terminal strength (tension) 2036 | Test cond. A; weight = 10 --- a ewe | one lbs; time = 15 sec Terminal strength (lead 2036 |Test cond. D1; torque = --- a torque) 6 in-oz; time = 15 sec Seal (leak- rate) --- |MIL-STD-202, method 112, --- --- 15x10] atm test cond. C, procedure II; cc/sed test cond. A for gross leaks Moisture resistance 1021 [Omit initial conditioning --- --- --- | --- End points: (See 4.4.2.) Collector to base cutoff 3036 | Bias cond. D; Vag= 30 Vde lopo --- 25 | wAde Forward-current transfer 3078 iVop = 4.0 VdejIG= 15 Ade bre ratio 2N1487, 2N1498 15 45 --- 2N1489, 2N1490 25 75 --- Subgroup 3 10 shock 2016 | Nonoperating; 560 G, 1.6 --- we- --- | --- msec, 5 blows in each orientation: X,, ), Yo, and 21 - 7 ~ Vibration fatigue 2046 | Nonoperating o-- --- ao+ | --- Vibration, variable frequency! 2056 --- o-+ --- [ --- Constant acceleration 2006 | 5000 G in each orientation: -<- --- ---+ | --- adMIL- S- 19500/208B TABLE IL Group B inspection - Continued MiL-STD-7T50 Limits Examination or test [ LTPD Method Details Symbol | Min Max | Unit Subgroup 4 an Salt atmosphere (corrosion) 1041 --- --- wee | one End points: (Same as for subgroup 2) Subgroup 5 10 Burnout by pulsing 3005 | Prepulse cond.: T, = 25C; Puise cond, : T,t Z5C; tp = 1 sec, test cycles = 1 Test #1 Voce = 12.5 Vdc; (All types) Ic = 6.0 Ade o-- --- woe | --- Test #2 Vor= 40 Vdc; 2N1487, 2N1489 Io = 1.875 Ade --- --- a Test #3 Vcr = 55 Vde; 2N1488, 2N1490 Ic = 1,36 Adc oe- ene twee | coe End points (Same as for subgroup 2) i Subgroup 6 10 Clamped-inductive sweep --- (See figure 2) Does == see Cosas test og, eee at ; i Unclamped-inductive sweep --- (See figure 3 and 4) --~ oe wer yp res | test i End points: f | 1 (Same as for subgroup 2) | | | | Subgroup 7 7 | | High-temperature life 1031 | Tstg = + 200 C; time = --- oor cer ote (nonoperating) 340 hours (see 4, 3. 4) End points: (See 4. 4. 2, } Collector to base cutoff 3036 | Bias cond. D; Vop= 30 Vde Icpo | -7- 1 50 j uAde current | | | | Forward-current iransier S076 | op= 4.0 Vde; hig ratio Ic = 1.5 Ade | | | 2N1487, 2Ni488 | 10 | 70 | oe 2N1489, 2N1490 | 18 | 115 | ---MIL-S- 19500/208B TABLE Ul. Group B inspection - Continued MIL-STD-750 Limits Examination or test LTPD Method Details Symbol Min Max | Unit Subgroup 8 10 Steady-state operation life 1026 | 100 C< Te < 125 C; --- --- woe | one VCE = 24 Vdc; Pc = 32 W+ 125 C- Te 2.33 C/W _ time = 340 hours (see 4. 3, 4) End points: (Same as for subgroup 7) ! TABLE I. Group C inspection MIL-STD-750 Limits Examination or test = LTPD Method Details Symbo] { Min Max | Unit Subgroup 1 20 Barometric pressure, re- 1001 | Pressure = 8 mm Hg, --- wee oor oo: duced (altitude operation) normal mounting; time = 1 minute Measurement during above test: Collector to base cutoff 3036 | Bias cond. D Inan current ew Z2Ni487, ZNi489 Vop = 50 Vac --- 200 | uAde 2N1488, 2N1490 Vcp = 100 Vde --- | 200 | pAde Thermal resistance 3151 6y- --- 2.33 | C/W (junction to case) Subgroup 2 A=10 High-temperature life 1031 | Tate = + 200 C (nonoperating) (see 4.3. 4) End points: (See 4. 4.2.) Collector to base cutoff 3036 : Bias cond. D; Vcop= 30 Vde IcBo --- 50 Ade current Forward-current transfer 3076 | Veep = 4. 0de; Ine 1. 5 Adc her ratio 2N1487, 2N1488 10 10 --- ZNi488, ZNi490 18 145 --- Subgroup 3 A=10 Steady-state operation life 1026 | 100 C< Te <_ 128C; --- o-- eee fone VcE = 24 Vdc; Po= 32W , 125 C- Te : 2,32 C/W | {see 4.3. 4) | End points: | (Same as for subgroup 2)MIL-S-19500/208B Rg SIN t5% NONINDUCTIVE \, | Ic MONITORED $ | S J 2NI487, 2NI489 SCOPE CT mi ABAD } CLAM ONIG4BB, 2NI490 90 Vv (+0, -5 V) i| i | D O <. $ WY AL S 2 |. PRETEST CONDITIONS: > a 5 lov SWITCH S$, CLOSED 14 Ig2!.5 ADC Sv _ ~~. AAA re I76.0 ave To = 25C = = 2, TEST CONDITIONS; SWITCH Ss. OPENED DEVICE FAILS If CLAMP VOLTAGE IS NOT REACHEDVoc | c Rg SINt5% cS NONINDUCTIVE \ L=40 mh (~ Ig MONITORED NI Seo ~~ | Ss ] 1 $ iO0O SL | 8 4 S$ 2 r ~tu15Vv |. PRETEST CONDITIONS: a | SWITCH S, CLOSED Tr Ipg=0.5 AOC To=3.0 ADC T.:-:+%9FRf weboe aod ' Cc o_ _ = 2. TEST CONDITIONS: TE SWITCH S OPENED DEVICE FAILS IF SECOND wee FF oa ee BREAKDOWN OCCURS FIGURE 3. Unclamped-inductive sweep test circuit. Nem ~-"QAMID [Sa] daams aatjanpul padwejup p JUNDI4 (S3IVN3HITIIN) JONVLONGNI Of TP tobe = ( gyno 338 = iniod isa L 7 at AGI- = 18, Ww 001 2484 90G2 291 p t we be ein ed | - JONWLINGN 7 t poo t Nay bl fd HOL937109 4 | I MV ad t 1 +: i wee ne he ne 7 : ' : , : i 1 } w-deee : | wee ve (SS3dWY) LNSYYND YOLIS1IOO Aad we =MIL- S- 19500/208B 5. PREPARATION FOR DELIVERY 5.1 See MIL-S-19500, section 5. terme 6.1 Notes. The notes specified in MIL-S-19500 are applicable to this specification. 6.2 Types covered by superseded specification. Transistor tunes 2N1511 thray So ApS CURE Ue See eee a eee 2ransista ype SsNatas Lt deleted from this specification. These types (TO-36 case) are no longer manufactured. Tra types 2N1487 through 2N1490, respectively, are electrically interchangeable with the deleted types and, with enitahlio mounting modifications may he ungad ac renlarcament itomc Tremec having tha TIC at Wau oF af ase Mey AAA MR MUSE OS 6 eee AAAS BEL ASA Aba a JPeO ev Ase, me prefix are interchangeable with those of corresponding type designation. A 8d Nienneittinn nf dalatadA H#mac Tenmac IRITK11 thennah INGA ac enanifiad in the euenarcnAsal Ve fee BS AVAORNOLUU SE UE UCAU EM LEO. 2 YEO SANA AS IS VUGE GINS AS, G5 GYUUMICU A ut GU! SocCuUutUu specification, y be issued until present stock is depleted 22 Mahaney Ean ene erin dae A rmtaminien amen mat ere nd te thine mnertninn 62 Lanett fer phn ene aeptah Viv Wb Be alu pic WUD AD OL FAS UCS AD. att tL uotu MUS PV isiveE suc suLay Cn Tpes Will Custodians: Preparing activity: Army - EL Army - EL Navy - SH Air Force - ii (Project 5961- 0009-3) Review activities: Army - EL, MU, Mil Navy - SH | Air Force - 11, 17, 85 Code "C" ! User activities: ? Navy - CG, MC, AS, OS a Air Force =~ sae US GOVERNMENT PRINTIOG OF PKCR 1967-901-312/1727 eam -_STqQ Yooazep OF WLIO S sUOCTa yno YQ SI aurT Form Approved SPECIFICATION ANALYSIS SHEET Budget Buresu No. 119-RO04 INSTRUCTIONS This sheet isto be filled out by personne! either Government or contractor, invoived in the use of the specific at on In pro curemeni of producis far ultimsie use Sy the Depariment of Delense. This sheet is provide t information on the use af this specification which will insure that suitable products can be procured with mount of delay end at ihe jeasi cost. Com senta and the return of this farm will be appreciated, Foid on lines e, ataple in corner, und send to preparing activity. SPECIFIC ATION C:Ty AND STATE v OF ITEMS PROCUREOD |OOLLAR AMOUNT fn a es B. RECOMMENDATIONS FOR CORRECTING THE OG FICIENCIES [2 COMMENTS ON ANY SPECIFICATION REQUIREMENT CONSIDERED TOO RIGIO 3. 1S THE SPECIFICATION RESTRICTIVE? as ives NO iF YES IN WHAT way? @ GEMARKS (Attach any pertinent? dala which may be of use in improving this specification, it there are additional papers, attach to form and place both tn an envelope eddressed to prepering activity) ___. 2 DD 1ocT 1426 9C.6u 2011 460gee ro wae eee FOLD DEPARTMENT OF THE ARMY HEADQUARTERS U.S.ARMY ELECTRONICS COMMAND FORT MONMOUTH, NEW JERSEY C7703 orriciaL GusmesS Fo. end PORTAGE AND FEES PAID DEPARTMENT OF THE ARMY Commanding General U. S. Army Electronics Command ATIN: AMSEL-PP- Fort Monmouth, New Jersey O77C3 . Ta Sa rr line t along this form. To detach this