HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6761
Issued Date : 1994.10.06
Revised Date : 2002. 02.26
Page No. : 1/3
HTIP50 HS MC Product Specification
HTIP50
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The HTIP50 is designed for line operated audio output amplifier
switch-mode power supply drivers and other switching applications.
Absolute Maximum Ratings (Ta=25°C)
• Maximum Temperatures
Storage Temper atur e............................................................................................ -50 ~ +150 °C
Junction Temper ature.................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Tc=25°C)..................................................................................... 40 W
Total Power Dissipation (Ta=25°C)....................................................................................... 2 W
• Maximum Voltages and Currents
BVCBO Collector to Base Voltage..................................................................................... 500 V
BVCEO Collector to Emitter Voltage.................................................................................. 400 V
BVEBO Emitter to Base Voltage............................................................................................ 5 V
IC Collector Current............................................................................................................... 1 A
Characteristics (Ta=25°C)
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO 500 - - V IC=1mA, IE= 0
BVCEO 400 - - V IC=30mA, IB=0
BVEBO 5 - - V IE=0.1mA, IC= 0
IEBO - - 1 mA VEB=5V, IC=0
ICEO - - 1 mA VCE=300V, IB=0
ICES - - 1 mA VCE=500V, VEB=0
*VCE(sat) - - 1 V IC=1A, IB=0.2A
VBE(on) - - 1.5 V IC=1A, VCE=10V
*hFE1 30 - 150 IC=0.3A, VCE= 10V
*hFE2 10 - - IC=1A, VCE=10V
fT 10 - - M Hz IC=0.2A, VCB= 10V, f=2MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
TO-220