R1242S Series 30 V Input 3 A Buck DC/DC Converter NO.EA-191-170607 OUTLINE The R1242S is a CMOS-based 30 V input, 3 A, synchronous rectified step-down DC/DC converter with builtin High-side switch. The R1242S contains Nch High-side Tr. (Typ. 0.1 ) and can supply maximum 3 A output current. In order to reduce heat generation caused by energy loss, FET can be used as Low-side switch. Lowside switch turns off when ICs shut down. The R1242S consists of the followings: an oscillator, a PWM control circuit, a voltage reference unit, an error amplifier, a phase compensation circuit, a slope control circuit, a softstart circuit, protection circuits, an internal regulator, a switch, and so on. Also, the R1242S consists of the following external components: an inductor, resistors, an external FET, and capacitors. The R1242S operates with current mode topology, which does not require any sense resistor. As a result, the R1242S can achieve high speed and high efficiency. The oscillator frequencies for each version are set as follows; adjustable between 330 kHz to 1000 kHz for versions A and B, 330 kHz for versions C and D, 500 kHz for versions E and F, and 1000 kHz for versions G and H. The R1242S is equipped with the protection functions, such as peak current limit function, latch function, fold back function, thermal-shutdown function, and undervoltage-lockout (UVLO) function. Peak current limit function restricts the maximum current into 4.5 A. Latch function (comes with versions A, C, E, and G) shuts off the output if current limit detection continues for a certain period of time. Fold back function (comes with versions B, D, F, and H) reduces the initial oscillator frequencies into 1/4 when output is short-circuited. FEATURES * * * * * * * Supply Current ................................................................... Typ. 0.8 mA (VIN = 30 V, Set VFB = 1.0 V) Standby Current ................................................................ Typ. 0 A (VIN = 30 V, CE = L) Input Voltage Range .......................................................... 5 V to 30 V Output Voltage Range ....................................................... 0.8 V to 15 V, Adjustable using external resistors Feed Back Voltage Accuracy ............................................. 0.8 V with 1.5% accuracy Output Current ................................................................... 3 A* Oscillator Frequency .......................................................... 330 kHz to 1 MHz (Ver. A/B), 330 kHz (Ver. C/D), 500 kHz, (Ver. E/F), 1000 kHz (Ver. G/H) * Maximum Duty Cycle......................................................... Typ. 88% * UVLO Detector Threshold ................................................. Typ. 3.6 V * Soft-start Time ................................................................... Typ. 0.5 ms * Peak Current Limit ............................................................. Typ. 4.5 A * Thermal Shutdown ............................................................ Typ. 160C * Latch Type Protection ........................................................ Delay Time: Typ. 5 ms (Ver. A/C/E/G) * Fold-back Type Protection ................................................. Fold-back Frequency: Ver. B: fosc x 1/4, Ver. D: 83 kHz, Ver. F: 125 kHz, Ver. H: 250 kHz * Package ............................................................................. HSOP-8E * This is an approximate value. The output current depends on conditions and external parts. 1 R1242S NO.EA-191-170607 APPLICATIONS * * * * Digital Home Appliances: Digital TVs, DVD Players Office Automation Equipment: Printers, Fax Hand-held Communication Equipment: Cameras, Video Recorders Battery-powered Equipment SELECTION GUIDE The oscillator frequency (Adjustable, Fixed: 330 kHz, 500 kHz, 1000 kHz) and the short-circuit protection type (Latch, Fold-back) are user-selectable options. Selection Guide Product Name Package Quantity per Reel Pb Free Halogen Free R1242S001-E2-FE HSOP-8E 1,000 pcs Yes Yes : Specify the oscillator frequency and the short-circuit protection type. Code A B C D E F G H 2 Frequency Adjustable Adjustable 330 kHz 330 kHz 500 kHz 500 kHz 1000 kHz 1000 kHz Latch Type Yes No Yes No Yes No Yes No Fold-back Type No Yes No Yes No Yes No Yes R1242S NO.EA-191-170607 BLOCK DIAGRAM VIN Thermal Shutdown UVLO CE Regulator 5V Regulator BST Shutdown RT SETPULSE Oscillator 1 (Ver.A/B only) VFB S D Lx MAXDUTY R Reference + + - + Soft Start Circuit(0.5msec) 55mV 0.8V Limit Latch Circuit(5msec) 1 Current Slope Circuit EXT Peak Current Limit Circuit(4.5A) Shutdown GND R1242S Block Diagram 1 Version Oscillator Frequency Short Protection A B C D E F G H Adjustable Adjustable 330 kHz 330 kHz 500 kHz 500 kHz 1000 kHz 1000 kHz Latch Type Fold-back Type Latch Type Fold-back Type Latch Type Fold-back Type Latch Type Fold-back Type 3 R1242S NO.EA-191-170607 PIN DESCRIPTIONS Top View 1 8 2 7 R1242 3 6 4 5 HSOP-8E Pin Configuration R1242S001A/B Pin Description Pin No. Symbol 1 CE 2 EXT 3 BST 4 VIN 5 Lx 6 GND 7 VFB 8 RT Description Chip Enable Pin, Active with "H" Gete Drive Pin Bootstrap Pin Power Supply Pin Lx Switching Pin Ground Pin Feedback Pin Frequency Setting Pin Tab is GND level. (They are connected to the reverse side of this IC.) The tab must be connected to the GND. R1242S001C/D/E/F/G/H Pin Description Pin No. Symbol Description 1 CE Chip Enable Pin, Active with "H" 2 EXT Gate Drive Pin 3 BST Bootstrap Pin 4 VIN Power Supply Pin 5 Lx Lx Switching Pin 6 GND Ground Pin 7 VFB Feedback Pin 8 TEST TEST Pin, OPEN or connect to GND Tab is GND level. (They are connected to the reverse side of this IC.) The tab must be connected to the GND. 4 R1242S NO.EA-191-170607 ABSOLUTE MAXIMUM RATINGS Absolute Maximum Ratings Symbol Item Input Voltage VIN Boost Pin Voltage VBST Lx Pin Voltage VLX CE Pin Input Voltage VCE VFB Pin Voltage VFB EXT Pin Voltage VEXT RT/ TEST Pin Voltage VRT/ VTEST Power Dissipation (Standard Land Pattern)* PD Junction Temperature Range Tj Storage Temperature Range Tstg Rating -0.3 V to 32 V VLX -0.3 V to VLX +6 V -0.3 V to VIN +0.3 -0.3 V to VIN +0.3 -0.3 V to 6 V -0.3 V to 6 V -0.3 V to 6 V 2.9 -40 to 125 -55 to 125 (GND = 0 V) Unit V V V V V V V W C C * Refer to Power Dissipation for detailed information. ABSOLUTE MAXIMUM RATINGS Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent damages and may degrade the life time and safety for both device and system using the device in the field. The functional operation at or over these absolute maximum ratings is not assured. RECOMMENDED OPERATING CONDITIONS Recommended Operating Conditions Symbol Item VIN Operating Input Voltage Ta Operating Temperature Range Rating Unit 5 to 30 V -40 to 85 C RECOMMENDED OPERATING CONDITIONS All of electronic equipment should be designed that the mounted semiconductor devices operate within the recommended operating conditions. The semiconductor devices cannot operate normally over the recommended operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And the semiconductor devices may receive serious damage when they continue to operate over the recommended operating conditions. 5 R1242S NO.EA-191-170607 ELECTRICAL CHARACTERISTICS (Unless otherwise noted, VIN = 12 V, Ta = 25C) Conditions Min. Typ. Max. Unit Electrical Characteristics Symbol Item IIN VUVLO2 VIN Consumption Current VIN = 30 V, VFB = 1.0 V UVLO Detect Voltage Rising VUVLO1 VFB UVLO Released Voltage VFB Voltage Tolerance VFB/Ta VFB Voltage Temperature Coefficient Oscillator Frequency (Ver. A/B) fosc fFLB Oscillator Frequency (Ver. C/D) Oscillator Frequency (Ver. E/F) Oscillator Frequency (Ver. G/H) Fold back Frequency Maxduty Maximum Duty Cycle tstart VCEH Soft Start Time Delay Time for Latch Protection Lx High Side Switch ON Resistance Lx High Side Switch Leakage Current Lx High Side Switch Limited Current CE "H" Input Voltage VCEL CE "L" Input Voltage tDLY RLXH ILXHOFF ILIMLXH Falling 0.45 VUVLO2 -0.5 3.7 0.788 VFB < 0.56, RT = GND (Ver. B) VFB < 0.56 (Ver. D) VFB < 0.56 (Ver. F) VFB < 0.56 (Ver. H) RT = 120 k (Ver. A/B) VIN = 9 V (Ver. C/D) 4.0 0.800 1.20 VUVLO2 -0.3 4.3 0.812 100 -40C Ta 85C RT = GND RT = floating RT = 120 k 0.80 900 290 450 300 450 900 1000 330 500 330 500 1000 1100 375 550 370 550 1100 250 83 125 250 82 (Ver. A/C/E/G) 88 mA V V V ppm/ C kHz kHz kHz kHz kHz kHz kHz kHz kHz kHz 95 % 0.5 5 ms ms 0.1 0 20 4.5 A A 1.7 V 0.4 V VFB Input Current CE "H" Input Current -1.0 -1.0 1.0 1.0 A A CE "L" Input Current Thermal Shutdown TTSD Detect Temperature Istandby Standby Current RRISE EXT "H" Switch On Resistance RFALL EXT "L" Switch On Resistance VEXTLIM Detecting Voltage for Low Side Switch Current Limit -1.0 1.0 A IFB ICEH ICEL 6 160 Hysteresis: 30C VIN = 30 V, VCE = 0 V IEXT = -100 mA IEXT = 100 mA 0 C 6 20 11 A 0.5 1.5 76 mV 36 55 R1242S NO.EA-191-170607 OPERATING DESCRIPTIONS OPERATION OF STEP-DOWN DC/DC CONVERTER AND OUTPUT CURRENT The step-down DC/DC converter charges energy in the inductor (L) when the Lx transistor turns on, and discharges the energy from the inductor when Lx transistor turns off and controls with less energy loss, so that a lower output voltage (VOUT) than the input voltage (VIN) can be obtained. The operation of the step-down DC/DC converter is explained in the following figures. VIN Highside Tr. Lowside FET VOUT L i2 ILmax IL i1 ILmin COUT GND Iconst ton t toff T=1/fosc Basic Circuit Inductor Current flowing through Inductor Step1. The highside transistor turns on and the inductor current (i1) flows, L is charged with energy. At this moment, i1 increases from the minimum inductor current (ILmin), which is 0 A, and reaches the maximum inductor current (ILmax) in proportion to the on-time period (ton) of the highside transistor. Step2. When the highside transistor turns off, L tries to maintain IL at ILmax, so L turns the lowside FET on and the inductor current (i2) flows into L. Step3. i2 decreases gradually and reaches ILmin in proportion to the off-time period (toff) of the highside transistor. In the case of PWM mode, VOUT is maintained by controlling ton. During PWM mode, the oscillator frequency (fosc) is being maintained constant. When the step-down DC/DC operation is constant, ILmin and ILmax during ton of highside transistor would be same as during toff of highside transistor. 7 R1242S NO.EA-191-170607 APPLICATION INFORMATION TYPICAL APPLICATION CIRCUIT Rspd 15 Cspd 220pF R1 20k R2 16k VIN BST VIN CIN 10F Cbst L 0.1F 330kHz (Rt=Floating) VFB Lx RT EXT 5.1k VOUT 1.8V COUT 22F x 2 FET CE GND 4.7H "H"active (recommendation) R1242S001A/B Typical Application Circuit, VOUT = 1.8 V, 330 kHz Rspd 15 Cspd 220pF R1 8k VIN BST VIN CIN 10F Cbst Lx VFB L 0.1F 4.7F COUT R2 16k TEST EXT CE GND GND FET 5.1k "H"active (recommendation) R1242S001C/D Typical Application Circuit, VOUT = 1.2 V, 330 kHz Recommendation Parts CIN 10 F, KTS500B106M55N0T00 (Nippon Chemi-Con) COUT 22 F, GRM31CR71A226M (Murata) Cbst 0.1 F, GRM21BB11H104KA01L (Murata) L 4.7 H, VLF10045T-4R7N6R1 (TDK) FET TPN11003NL (TOSHIBA) 8 VOUT 1.2V 22F x 2 R1242S NO.EA-191-170607 Rspd 15 Cspd 470pF VIN R1 BST VIN CIN 10F 8k Cbst 0.1F Rbst 15 L 2.2H Lx VFB VOUT 1.2V COUT R2 16k 500kHz EXT RT (Rt=120k) CE GND 22F x 2 FET 5.1k "H"active (recommendation) R1242S001A/B Typical Application Circuit, VOUT = 1.2 V, 500 kHz Rspd 15 Cspd 470pF R1 8k VIN VIN BST CIN 10F Cbst 0.1F Rbst 15 L 2.2H Lx VFB 1.2V R2 16k EXT TEST CE GND VOUT FET COUT 22F x 2 5.1k "H"active (recommendation) R1242S001E/F Typical Application Circuit, VOUT = 1.2 V, 500 kHz Recommendation Parts CIN 10 F, KTS500B106M55N0T00 (Nippon Chemi-Con) COUT 22 F, GRM31CR71A226M (Murata) Cbst 0.1 F, GRM21BB11H104KA01L (Murata) L 2.2 H, RLF7030T-2R2M5R4 (TDK) FET TPN11003NL (TOSHIBA) 9 R1242S NO.EA-191-170607 Cspd 100pF VIN R1 BST VIN CIN 10F 50k Cbst 0.1F VFB L 4.7H Lx VOUT 3.3V COUT R2 16k 1000kHz (Rt=GND) RT CE GND 10F FET EXT 5.1k "H"active (recommendation) R1242S001A/B Typical Application Circuit, VOUT = 3.3 V, 1000 kHz Rspd 15 Cspd 100pF R1 50k VIN BST VIN CIN 10F Cbst 0.1F VFB L 4.7H Lx 3.3V COUT R2 16k TEST FET EXT CE GND GND "H"active (recommendation) 5.1k R1242S001G/H Typical Application Circuit, VOUT = 3.3 V, 1000 kHz Recommendation Parts CIN 10 F, KTS500B106M55N0T00 (Nippon Chemi-Con) COUT 10 F, GRM31CR71E106K (Murata) Cbst 0.1 F, GRM21BB11H104KA01L (Murata) L 4.7 H, VLF10045T-4R7N6R1 (TDK) FET TPN11003NL (TOSHIBA) 10 VOUT 10F R1242S NO.EA-191-170607 THE VOLTAGE BETWEEN THE BST PIN AND Lx PIN In the application of the "Bootstrap" Start switching regulator, the R1242S, when the Lx pin voltage becomes equal or less than the BST voltage supply regulator, the BST voltage supply regulator charges the capacitor, Cbst. By this function, even if the Lx pin becomes "H", the high side switch composed of an Nch transistor can be turned on. Under the condition of PWM operation, the BST voltage supply regulator of the R1242S, while the Lx pin voltage is "L", the voltage between BST pin and GND pin is controlled and maintained the level as of 5 V, then regardless of the voltage drop by the bootstrap switch, the BST voltage supply regulator can drive a high side switch and the low side external MOSFET. However, if either the maximum duty cycle limit or the low side switch current limit is detected, sampling of the voltage between BST pin and Lx pin is halted, and the output of the BST voltage supply regulator becomes stacked at 5 V as same as a conventional "Bootstrap" Start switching regulator. Depending on the external FET gate capacitance, excessive voltage drop can be caused by bootstrap switching, and also switching failure can be caused by insufficient electrical charge on Cbst. As a result, the desired voltage may not be obtained. Higher frequency requires higher electrical charge. Special attention is required in case of using the device at 1000 kHz. Events that may trigger such trouble are (A) Detect of the current limit of low side switch at light load (B) VOUT > VIN / 2 and starting the circuit without using CE pin individually or CE pin and VIN are tied and controlled at the same time. (C) The voltage difference between the input and the output is small and usage at maximum duty cycle is expected. The countermeasure to avoid the trouble caused by the events above is to use an external diode, Dbst shown in the figure below. The Dbst will charge CBST and prevents the abnormal switching. The supply voltage to Dbst should be in the range from 4.5 V to 6.0 V and if the set output voltage of the R1242S is in the range from 4.5 V to 6.0 V, then the output voltage can be used directly as the supply voltage of Dbst. The voltage rating of the diode, Dbst must be VIN or more, the forward current of Dbst must be 20 mA or more. Other specifications of the Dbst are not important. 11 R1242S NO.EA-191-170607 4.5 V to 6.0 V ( Cspd R1 VIN BST VIN Cbst CIN 1000kHz (Rt=GND) L Lx FB R2 ) Dbst *if necessary RT EXT CE GND VOUT FET COUT "H"active (recommendation) Application Circuit Example If the auxiliary power source for BST 4.5 V to 6.0 V does not have a bypass capacitor, set 0.1 F or higher bypass capacitor between the auxiliary power source and GND. 12 R1242S NO.EA-191-170607 OPERATING FREQUENCY (VERSION A/B) In the application circuit of the R1242S001A/B, the 330 kHz operation is selected by leaving Rt open. Connecting a 200 k to 0 resistor between Rt (pin 8) and ground can be used to set the switching frequency to approximately 450 kHz to 1000 kHz. To calculate the Rt resistor, use the equation below: *(Between 330 kHz and 450 kHz switching frequency can be also set by connecting the appropriate resistor according to the next equation.) Rt = 120000 / (2 / (1000000 / fosc - 1) - 1) [] The switching frequency vs. Rt value is shown in Figure 1 and Figure 2. Figure 1. Linearscale Figure 2. Logscale 13 R1242S NO.EA-191-170607 OUTPUT CURRENT AND SELECTION OF EXTERNAL COMPONENTS The following equations explain the relationship between output current and peripheral components. Ripple Current P-P value is described as IRP, ON resistance of Highside Tr. is described as RONH, ON resistance of Lowside FET is described as RONL, and DC resistance of the inductor is described as RL. First, when Highside Tr. is "ON", the following equation is satisfied. VIN = VOUT + (RONH + RL) x IOUT + L x IRP / ton ................................................................................ Equation 3 Second, when Highside Tr. is "OFF" (Lowside FET is "ON"), the following equation is satisfied. L x IRP / toff = RONL x IOUT + VOUT + RL x IOUT .................................................................................. Equation 4 Put Equation 4 into Equation 3 to solve ON duty of Highside Tr. (DON = ton / (toff + ton)): DON = (VOUT + (RONL + RL) x IOUT) / (VIN + (RONL - RONH) x IOUT) ..................................................... Equation 5 Ripple Current is described as follows: IRP = (VIN - VOUT - RONH x IOUT - RL x IOUT) x DON / fosc / L ........................................................... Equation 6 Peak current that flows through L, and LX Tr. is described as follows: ILmax = IOUT + IRP / 2...................................................................................................................... Equation 7 Notes: Please consider ILmax when setting conditions of input and output, as well as selecting the external components. The above calculation formulas are based on the ideal operation of the ICs in continuous mode. 14 R1242S NO.EA-191-170607 TECHNICAL NOTES The performance of a power source circuit using this device is highly dependent on a peripheral circuit. A peripheral component or the device mounted on PCB should not exceed its voltage, current or power ratings. When designing a peripheral circuit, please be fully aware of the following points. (Refer to our PCB layout for detailed information). * * * * * * * * External components must be connected as close as possible to the ICs and their wiring must be short as possible. Especially, the capacitor must be connected with the shortest distance between VIN and GND pins. If the impedances of the power supply line and the GND line are high, the operation can be unstable due to the switching current which fluctuates the electric potential of the inside the ICs. The impedances of power supply line and GND line must be as low as possible. When designing their wirings, it is necessary to give careful consideration to the large current flowing into the power supply, GND, Lx, VOUT and inductor. The wiring of output voltage setting resistance (R1) and the wiring of inductor must be separated from load wiring. The ceramic capacitors with low ESR (Equivalent Series Resistance) must be used for the ICs. The recommended value for the CIN capacitor between VIN and GND is equal or more than 10 F. The selections of inductor (L) and output capacitor (COUT) can be different according to the ICs' oscillation frequencies, output voltages and input voltages. Refer to "Recommended Value for Each Output Voltage" on the next page and select the most suitable values at the conditions of use. The internal phase compensation is built in the ICs; therefore, if the values selected are largely deviated from the recommended values, the operation may result in unstable. The over current protection circuit could be influenced by self-heating of the ICs and heat dissipation of the PCB environment. In order to prevent self-turning on, FET with smaller gate resistance and with smaller Cgd/ Cgs (capacities between gate drains and the capacities between gate sources) should be selected. The output voltage (VOUT) can be calculated as VOUT = VFB x (R1 + R2) / R2. The various voltage settings are possible by changing the values of R1 and R2. However, R2 value must be equal or less than 16 k. Rspd prevents the deterioration in the regulation characteristics, which is caused by spike noise occurred in VOUT. Spike noise is largely depending on the PCB layout. If the PCB board layout is optimized, there is no need of Rspd; however, if the spike noise is a concern, Rspd with 15 or so should be used. After the completion of soft start, latch function (Ver. A, C, E, G) starts to work. The internal counter starts counting up when the over current protection circuit activates the limited current detection. When the internal counter counts up to 5ms, which is a typical delay time for latch protection, the latch function turns off the output. The turned off output can be reset when CE pin is changed to "L", and also VIN pin voltage is became less than 3.6 V (Typ.), which is UVLO detecting voltage. If the output voltage increases more than the setting voltage (VFB pin voltage is 0.8 V (Typ.)) within the delay time for latch protection, the counter restores the default. If the power-supply voltage's start-up is slow and the output voltage is not reached to the setting voltage within the delay time for latch protection after the soft start, the careful attention is required. 15 R1242S NO.EA-191-170607 * After the soft start, fold back function (Ver. B, D, F, H) starts to work. The fold back function limits the oscillation frequencies into 1/4 when (VFB pin voltage decreases to less than 0.56 V (Typ.)). If the powersupply voltage's start-up is slow and the output voltage is not reached to the 70% of the setting voltage even for a short period of time after the soft start, the careful attention is required. The ICs are not supporting Nonsynchronous rectification using a diode as a rectifier. The following table shows the recommended values for setting frequency and setting output voltage. * Recommended Values 330 kHz VOUT [V] VIN Range [V] L [H] COUT [F] Cspd [pF] R1 [] R2 [] 0.8 5~14 2.2 100 - 1.2 ~12 10 22 470 8000 16000 1.2 9~30 4.7 44 470 8000 16000 1.5 5~10 10 22 220 14000 16000 1.5 10~30 4.7 44 220 14000 16000 1.8 5~15 15 22 470 20000 16000 1.8 12~30 4.7 44 220 20000 16000 2.5 5~15 15 22 220 34000 16000 2.5 12~30 10 22 220 34000 16000 3.3 5~30 15 22 220 50000 16000 5 7~30 15 22 220 84000 16000 500 kHz VOUT [V] VIN Range [V] L [H] COUT [F] Cspd [pF] R1 [] R2 [] 0.8 ~9 2.2 100 - 1.0 ~10 2.2 44 1000 4000 16000 1.2 5~15 2.2 44 470 8000 16000 1.5 5~18 4.7 44 220 14000 16000 1.5 7~19 2.2 44 220 14000 16000 1.8 5~23 4.7 44 220 20000 16000 1.8 9~21 2.2 44 220 20000 16000 2.5 5~29 10 22 220 34000 16000 3.3 5~30 10 22 220 50000 16000 5 7~30 10 22 220 84000 16000 9 12 15~30 18~30 10 15 22 22 220 220 164000 224000 16000 16000 1000 kHz VOUT [V] VIN Range [V] L [H] COUT [F] Cspd [pF] R1 [] R2 [] 0.8 5~7 1.5 100 - 1.5 5~15 2.2 22 100 14000 16000 1.8 5~15 4.7 22 220 20000 16000 2.5 5~19 4.7 22 220 34000 16000 3.3 5~30 4.7 10 100 50000 16000 16 1.2 5~10 2.2 22 220 8000 16000 5 7~12 4.7 10 100 84000 16000 5 12~30 4.7 10 56 84000 16000 9 15~30 4.7 10 56 164000 16000 15 20~30 10 10 100 284000 16000 9 15~30 15 22 220 164000 16000 15 20~30 15 22 220->100 284000 16000 15 20~30 15 22 220 284000 16000 R1242S NO.EA-191-170607 Recommended External Components Symbol Condition Value CIN COUT FET RCE MFR 10 F/ 50 V 10 F/ 50 V UMK325BJ106MM-P TAIYO YUDEN CGA6P3X7S1H106K TDK 10 F/ 50 V KTS500B106M55N0T00 Nippon Chemi-Con 10 F/ 10 V GRM31CR71A106K Murata VOUT > 10 V 10 F/ 50 V KTS500B106M55N0T00 Nippon Chemi-Con 10 V > VOUT > 1.8 V VOUT < 1.8 V 10 F/ 25 V Murata Murata 0.1 F/ 50 V GRM31CR71E106K GRM31CR71A226M (at the diode rectifier, the specified condition only) GRM21BB11H104KA01L 1.5 H 30%/ 4.0 A 1.5 H SLF7055T-1R5N4R0-3PF TDK 2.2 H 20%/ 5.4 A 4.7 H 30%/ 6.1 A 2.2 H 4.7 H RLF7030T-2R2M5R4 TDK VLF10045T-4R7N6R1 TDK 10 H 20% 6.2 A 10 H VLF12060T-100M6R2 TDK 15 H 20% 5.0 A 15 H VLF12060T-150M5R0 TDK 30 V/11 A 12.6 m TPN11003NL TOSHIBA 30 V/20 A 30 V/6 A 10.2 m 56 m TPN8R903NL SSM3K335R TOSHIBA TOSHIBA CBST L Parts Name 22 F/ 10 V Murata The diode is connected between CE pin and VIN pin as an ESD protection element. If there is a possibility that the CE pin voltage becomes higher than the VIN pin voltage, it is recommended to insert a 5 k resistance or more in order to prevent the large current flowing from CE pin into VIN pin. 17 R1242S NO.EA-191-170607 TECHNICAL NOTES ON PCB LAYOUT PATTERN 1. Make the power line (VIN and GND) broad to avoid the generation of the parasitic inductance. Place the bypass capacitor (CIN) between VIN and GND as close as possible to each other. 2. Make the wire between Lx pin and the inductor as short as possible to avoid the generation of the parasitic inductance. (This Evaluation Board is designed for the testing. Therefore, the inductor is large, a diode is connectable, and the large space is secured for Lx part.) 3. The ripple current passes through the output capacitor; therefore, if the COUT's GND is placed in the outside of the CIN's GND side and the IC's GND, the IC can be easily affected by the noise. 4. Mount RUP, RBOT, CSPD and RSPD on the place where the FB pin is close and the inductor and the BST pin are away. 5. Start the feedback from where the output capacitor (COUT) is close. PCB LAYOUT TOP VIEW BOTTOM VIEW 18 R1242S NO.EA-191-170607 TYPICAL CHARACTERISTICS 0.808 0.806 0.804 0.802 0.800 0.798 0.796 0.794 0.792 2)Oscillator Frequency(ver.A,B Rt=floating) (VIN=12V) fosc(kHz) VFB(V) 1)FB Voltage -40 -15 10 35 60 390 370 350 330 310 290 270 85 (VIN=12V) -40 -15 10 35 3)Oscillator Frequency(ver.A,B Rt=GND) 4)Oscillator Frequency(ver.A,B Rt=120k) (VIN=12V) 600 fosc(kHz) fosc(kHz) (VIN=12V) -40 -15 10 35 60 550 500 450 400 85 -40 -15 10 35 5)Oscillator Frequency(ver.C,D) 85 6) Oscillator Frequency(ver.E,F) (VIN=12V) (VIN=12V) 600 fosc(kHz) fosc(kHz) 60 Ta(C) Ta(C) 390 370 350 330 310 290 270 85 Ta(C) Ta(C) 1200 1150 1100 1050 1000 950 900 850 800 60 -40 -15 10 35 Ta(C) 60 85 550 500 450 400 -40 -15 10 35 60 85 Ta(C) 19 R1242S NO.EA-191-170607 8) Fold-Back Frequency(ver.A,B Rt=GND) (VIN=12V) 1200 1150 1100 1050 1000 950 900 850 800 300 250 200 150 -40 -15 10 35 Ta(C) 60 85 -40 (VIN=12V) fFLD(kHz) 115 105 95 85 75 65 55 45 -40 -15 10 35 -15 60 -15 200 150 Ta(C) 20 60 85 60 85 (VIN=12V) 100.0 Maxduty(%) fFLD(kHz) 250 35 35 12) Maxduty(ver.A,B Rt=floating) 300 10 10 Ta(C) (VIN=12V) -15 85 (VIN=12V) -40 85 11) Fold-Back Frequency(ver.G,H) -40 60 160 150 140 130 120 110 100 90 80 Ta(C) 350 10 35 Ta(C) 10) Fold-Back Frequency(ver.E,F) 9) Fold-Back Frequency(ver.C,D) fFLD(kHz) (VIN=12V) 350 fFLD(kHz) fosc(kHz) 7) Oscillator Frequency(ver.G,H) 95.0 90.0 85.0 -4 80.0 -4 -4 75.0 70.0 -40 -15 10 35 Ta(C) 60 85 R1242S NO.EA-191-170607 13) Maxduty(ver.C,D) 14) Maxduty(ver.G,H) (VIN=12V) 95.0 90.0 85.0 80.0 75.0 70.0 (VIN=12V) 100.0 Maxduty(%) Maxduty(%) 100.0 95.0 90.0 85.0 80.0 75.0 70.0 -40 -15 10 35 60 85 -40 -15 Ta(C) Maxduty(%) Maxduty(%) 85 90.0 85.0 80.0 90.0 80.0 70.0 75.0 60.0 70.0 50.0 20 25 30 (Ta=25) 100.0 95.0 15 60 16) Maxduty(ver.C,D) (Ta=25) 100.0 10 35 Ta(C) 15) Maxduty(ver.A,B Rt=GND) 5 10 5 10 15 20 25 30 VIN [V] VIN [V] 17) Maxduty(ver.G,H) (Ta=25) 100.0 Maxduty(%) 95.0 90.0 85.0 80.0 75.0 70.0 5 10 15 20 25 30 VIN [V] 21 R1242S NO.EA-191-170607 18)Efficiency vs Load Current fosc=330kHz VOUT:3.3V VOUT:0.8V (Ta=25) 80 60 Vin= 5V V =5V IN 40 VIN=9V Vin= 9V V =12V 20 (Ta=25) 100 Efficiency[%] Efficiency [%] 100 IN 12 V Vin= 80 Vin= 5V VIN=5V Vin= 9V VIN=9V Vin= 12 V VIN=12V Vin= 24 V VIN=24V Vin= 30 V VIN=30V 60 40 20 0 0 1 10 100 IOUT [mA] 1000 10000 1 10 100 IOUT [mA] 1000 10000 VOUT:15V (Ta=25) Efficiency [%] 100 80 60 40 V Vin= 24 V IN=24V VIN=30V Vin= 30 V 20 0 1 10 100 IOUT [mA] 1000 10000 fosc=500kHz VOUT:3.3V (Ta=25) Efficiency [%] 100 80 60 40 Vin= 5V VIN=5V Vin= 9V VIN=9V 20 0 80 Vin= 5V VIN=5V Vin= 9V VIN=9V Vin= 12 V VIN=12V V =24V Vin= IN 24 V VIN=30V Vin= 30 V 60 40 20 0 1 22 (Ta=25) 100 Efficiency [%] VOUT:0.8V 10 100 IOUT [mA] 1000 10000 1 10 100 IOUT [mA] 1000 10000 R1242S NO.EA-191-170607 VOUT:15V (Ta=25) Efficiency [%] 100 80 60 40 Vin= 24 V VIN=24 VIN=30 Vin= 30 V V 20 0 1 10 100 IOUT[mA] 1000 10000 fosc=1000kHz VOUT:3.3V VOUT:0.8V (Ta=25) (Ta=25) 5 VVin= IN=5V V 80 100 Efficiency [%] Efficiency [%] 100 60 40 20 80 60 Vin= 5V VIN=5V Vin= 9V VIN=9V VIN=12V Vin= 12 V 40 20 0 0 1 10 100 IOUT [mA] 1000 10000 1 10 100 1000 10000 IOUT [mA] VOUT:15V (Ta=25) 100 Efficiency [%] 80 60 40 VIN=24V Vin=24V VIN=30V Vin=30V 20 0 1 10 100 IOUT [mA] 1000 10000 23 R1242S NO.EA-191-170607 19)Load Regulation fosc=330kHz VOUT:0.8V VOUT:3.3V (Ta=25) VOUT[V] Vin= 5V VIN=5V Vin= 9V VIN=9V Vin= 12 V VIN=12V 0 3.5 3.45 3.4 3.35 3.3 3.25 3.2 3.15 3.1 VOUT[V] 0.85 0.84 0.83 0.82 0.81 0.8 0.79 0.78 0.77 0.76 0.75 (Ta=25) VIN=5V Vin= 5V Vin= 9V VIN=9V Vin= 12 V VIN=12V Vin= 24 V VIN=24V Vin= 30 V VIN=30V 0 500 1000 1500 2000 2500 3000 500 IOUT[mA] 1000 1500 2000 2500 3000 IOUT[mA] VOUT:15V (Ta=25) 16 15.8 15.6 15.4 15.2 15 14.8 14.6 14.4 14.2 14 VOUT[V] VIN=24V Vin= 24 V V =30V Vin= IN 30 V 0 500 1000 1500 2000 2500 3000 IOUT [mA] fosc=500kHz VOUT:0.8V VOUT:3.3V (Ta=25) VOUT [V] VIN=5V Vin= 5V VIN=9V Vin= 9V 0 24 500 1000 1500 2000 2500 3000 IOUT[mA] VOUT [V] (Ta=25) 0.85 0.84 0.83 0.82 0.81 0.8 0.79 0.78 0.77 0.76 0.75 V Vin= 5V IN=5V V Vin= 9V IN=9V V =12V Vin= 12 V IN V Vin= 24 V IN=24V V Vin= 30 V IN=30V 3.5 3.45 3.4 3.35 3.3 3.25 3.2 3.15 3.1 0 500 1000 1500 2000 IOUT [mA] 2500 3000 R1242S NO.EA-191-170607 VOUT [V] VOUT:15V (Ta=25) 16 15.8 15.6 15.4 15.2 15 14.8 14.6 14.4 14.2 14 Vin= 24 V VIN=24V Vin= 30 V VIN=30V 0 500 1000 1500 2000 2500 3000 IOUT [mA] fosc=1000kHz VOUT:3.3V (Ta=25) 0.85 0.84 0.83 0.82 0.81 0.8 0.79 0.78 0.77 0.76 0.75 Vin= 5 V IN=5V V 0 500 1000 1500 2000 IOUT [mA] 2500 3000 VOUT[V] VOUT[V] VOUT:0.8V (Ta=25) 5V VVin= IN=5V VVin= 9V IN=9V VVin= 12 V IN=12V 3.6 3.5 3.4 3.3 3.2 3.1 3 2.9 2.8 0 500 1000 1500 2000 IOUT [mA] 2500 3000 VOUT [V] VOUT:15V (Ta=25) 16 15.8 15.6 15.4 15.2 15 14.8 14.6 14.4 14.2 14 V Vin=24V IN=24V V Vin=30V IN=30V 0 500 1000 1500 2000 2500 3000 IOUT [mA] 25 R1242S NO.EA-191-170607 20)Line Regulation fosc=330kHz VOUT:3.3V (Ta=25) 0.85 0.84 0.83 0.82 0.81 0.80 0.79 0.78 0.77 0.76 0.75 Iout=1mA IOUT=1mA Iout=100mA IOUT=100mA Iout=500mA IOUT=500mA Iout=1500mA IOUT=1500mA Iout=3000mA IOUT=3000mA 5 10 15 20 VIN(V) 25 VOUT [V] VOUT [V] VOUT:0.8V (Ta=25) 3.50 3.45 3.40 3.35 3.30 3.25 3.20 3.15 3.10 30 IOUT=1mA Iout=1mA IOUT=100mA Iout=100mA IOUT=500mA Iout=500mA IOUT=1500mA Iout=1500mA IOUT=3000mA Iout=3000mA 5 10 15 20 VIN(V) 25 30 VOUT:15V (Ta=25) 16.0 15.8 15.6 15.4 15.2 15.0 14.8 14.6 14.4 14.2 14.0 VOUT [V] Iout=1mA IOUT=1mA Iout=100mA IOUT=100mA Iout=500mA IOUT=500mA Iout=1500mA IOUT=1500mA Iout=3000mA IOUT=3000mA 20 25 VIN(V) 30 fosc=500kHz VOUT:0.8V VOUT:3.3V (Ta=25) VOUT [V] Iout=1mA IOUT=1mA Iout=100mA IOUT=100mA Iout=500mA IOUT=500mA Iout=1500mA IOUT=1500mA Iout=3000mA IOUT=3000mA 5 26 6 VIN(V) 7 8 (Ta=25) VOUT [V] 0.85 0.84 0.83 0.82 0.81 0.80 0.79 0.78 0.77 0.76 0.75 3.50 3.45 3.40 3.35 3.30 3.25 3.20 3.15 3.10 Iout=1mA IOUT=1mA Iout=100mA IOUT=100mA Iout=500mA IOUT=500mA IOUT=1500mA Iout=1500mA IOUT=3000mA Iout=3000mA 5 10 15 VIN(V) 20 25 30 R1242S NO.EA-191-170607 VOUT [V] VOUT:15V (Ta=25) 16.0 15.8 15.6 15.4 15.2 15.0 14.8 14.6 14.4 14.2 14.0 Iout=1mA IOUT=1mA Iout=100mA IOUT=100mA Iout=500mA IOUT=500mA Iout=1500mA IOUT=1500mA Iout=3000mA IOUT=3000mA 20 25 VIN(V) 30 fosc=1000kHz VOUT:3.3V VOUT:0.8V (Ta=25) 0.85 0.84 0.83 0.82 0.81 0.80 0.79 0.78 0.77 0.76 0.75 VOUT [V] IIout=1mA OUT=1mA IIout=100mA OUT=100mA IIout=500mA OUT=500mA IIout=1500mA OUT=1500mA IIout=3000mA OUT=3000mA 5 6 VIN [V] 7 8 VOUT [V] (Ta=25) 3.50 3.45 3.40 3.35 3.30 3.25 3.20 3.15 3.10 IOUT=1mA Iout=1mA IOUT=100mA Iout=100mA IOUT=500mA Iout=500mA IOUT=1500mA Iout=1500mA IOUT=3000mA Iout=3000mA 5 10 15 VIN(V) 20 25 30 VOUT:15V (Ta=25) VOUT [V] 16.0 15.8 15.6 15.4 15.2 15.0 14.8 14.6 14.4 14.2 14.0 20 25 VIN(V) Iout=1mA IOUT=1mA Iout=100mA IOUT=100mA Iout=500mA IOUT=500mA Iout=1500mA IOUT=1500mA Iout=2000mA IOUT=3000mA 30 27 POWER DISSIPATION HSOP-8E Ver. A The power dissipation of the package is dependent on PCB material, layout, and environmental conditions. The following conditions are used in this measurement. Measurement Conditions Ultra-High Wattage Land Pattern Environment Mounting on Board (Wind Velocity = 0 m/s) Board Material Glass Cloth Epoxy Plastic (Four-Layer Board) Board Dimensions 76.2 mm x 114.3 mm x 0.8 mm Copper Ratio Outer Layers (First and Fourth Layers): Approx. 95% of 50 mm Square Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square Through-holes 0.4 mm x 21 pcs (Ta = 25C, Tjmax = 125C) Measurement Result Ultra-High Wattage Land Pattern Power Dissipation 2.9 W Thermal Resistance ja = (125 - 25C) / 2.9 W = 35C/W jc = 10C/W 4.0 76.2 40 3.0 50 Ultra-High Wattage Land Pattern 2.0 114.3 Power Dissipation (W) 50 2.9 1.0 0 0 25 50 75 85 100 125 150 Ambient Temperature (C) Power Dissipation vs. Ambient Temperature IC Mount Area (mm) Measurement Board Pattern i PACKAGE DIMENSIONS HSOP-8E HSOP-8E Package Dimensions The tab on the bottom of the package shown by blue circle is substrate potential (GND). It is recommended that this tab be connected to the ground plane on the board but it is possible to leave the tab floating. i 1. The products and the product specifications described in this document are subject to change or discontinuation of production without notice for reasons such as improvement. Therefore, before deciding to use the products, please refer to Ricoh sales representatives for the latest information thereon. 2. The materials in this document may not be copied or otherwise reproduced in whole or in part without prior written consent of Ricoh. 3. Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise taking out of your country the products or the technical information described herein. 4. The technical information described in this document shows typical characteristics of and example application circuits for the products. The release of such information is not to be construed as a warranty of or a grant of license under Ricoh's or any third party's intellectual property rights or any other rights. 5. The products listed in this document are intended and designed for use as general electronic components in standard applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products, amusement equipment etc.). Those customers intending to use a product in an application requiring extreme quality and reliability, for example, in a highly specific application where the failure or misoperation of the product could result in human injury or death (aircraft, spacevehicle, nuclear reactor control system, traffic control system, automotive and transportation equipment, combustion equipment, safety devices, life support system etc.) should first contact us. 6. We are making our continuous effort to improve the quality and reliability of our products, but semiconductor products are likely to fail with certain probability. In order to prevent any injury to persons or damages to property resulting from such failure, customers should be careful enough to incorporate safety measures in their design, such as redundancy feature, fire containment feature and fail-safe feature. We do not assume any liability or responsibility for any loss or damage arising from misuse or inappropriate use of the products. 7. Anti-radiation design is not implemented in the products described in this document. 8. The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and characteristics in the evaluation stage. 9. WLCSP products should be used in light shielded environments. The light exposure can influence functions and characteristics of the products under operation or storage. 10. There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the case of recognizing the marking characteristic with AOI, please contact Ricoh sales or our distributor before attempting to use AOI. 11. Please contact Ricoh sales representatives should you have any questions or comments concerning the products or the technical information. Halogen Free Ricoh is committed to reducing the environmental loading materials in electrical devices with a view to contributing to the protection of human health and the environment. Ricoh has been providing RoHS compliant products since April 1, 2006 and Halogen-free products since April 1, 2012. https://www.e-devices.ricoh.co.jp/en/ Sales & Support Offices Ricoh Electronic Devices Co., Ltd. Shin-Yokohama Office (International Sales) 2-3, Shin-Yokohama 3-chome, Kohoku-ku, Yokohama-shi, Kanagawa, 222-8530, Japan Phone: +81-50-3814-7687 Fax: +81-45-474-0074 Ricoh Americas Holdings, Inc. 675 Campbell Technology Parkway, Suite 200 Campbell, CA 95008, U.S.A. Phone: +1-408-610-3105 Ricoh Europe (Netherlands) B.V. Semiconductor Support Centre Prof. W.H. Keesomlaan 1, 1183 DJ Amstelveen, The Netherlands Phone: +31-20-5474-309 Ricoh International B.V. - German Branch Semiconductor Sales and Support Centre Oberrather Strasse 6, 40472 Dusseldorf, Germany Phone: +49-211-6546-0 Ricoh Electronic Devices Korea Co., Ltd. 3F, Haesung Bldg, 504, Teheran-ro, Gangnam-gu, Seoul, 135-725, Korea Phone: +82-2-2135-5700 Fax: +82-2-2051-5713 Ricoh Electronic Devices Shanghai Co., Ltd. Room 403, No.2 Building, No.690 Bibo Road, Pu Dong New District, Shanghai 201203, People's Republic of China Phone: +86-21-5027-3200 Fax: +86-21-5027-3299 Ricoh Electronic Devices Shanghai Co., Ltd. Shenzhen Branch 1205, Block D(Jinlong Building), Kingkey 100, Hongbao Road, Luohu District, Shenzhen, China Phone: +86-755-8348-7600 Ext 225 Ricoh Electronic Devices Co., Ltd. Taipei office Room 109, 10F-1, No.51, Hengyang Rd., Taipei City, Taiwan (R.O.C.) Phone: +886-2-2313-1621/1622 Fax: +886-2-2313-1623