R1242S Series
30 V Input 3 A Buck DC/DC Converter
NO.EA-191-170607
1
OUTLINE
The R1242S is a CMOS-based 30 V input, 3 A, synchronous rectified step-down DC/DC converter with built-
in High-side switch. The R1242S contains Nch High-side Tr. (Typ. 0.1 Ω) and can supply maximum 3 A output
current. In order to reduce heat generation caused by energy loss, FET can be used as Low-side switch. Low-
side switch turns off when ICs shut down. The R1242S consists of the followings: an oscillator, a PWM control
circuit, a voltage reference unit, an error amplifier, a phase compensation circuit, a slope control circuit, a soft-
start circuit, protection circuits, an internal regulator, a switch, and so on. Also, the R1242S consists of the
following external components: an inductor, resistors, an external FET, and capacitors.
The R1242S operates with current mode topology, which does not require any sense resistor. As a result, the
R1242S can achieve high speed and high efficiency. The oscillator frequencies for each version are set as
follows; adjustable between 330 kHz to 1000 kHz for versions A and B, 330 kHz for versions C and D, 500 kHz
for versions E and F, and 1000 kHz for versions G and H.
The R1242S is equipped with the protection functions, such as peak current limit function, latch function, fold
back function, thermal-shutdown function, and undervoltage-lockout (UVLO) function. Peak current limit
function restricts the maximum current into 4.5 A. Latch function (comes with versions A, C, E, and G) shuts
off the output if current limit detection continues for a certain period of time. Fold back function (comes with
versions B, D, F, and H) reduces the initial oscillator frequencies into 1/4 when output is short-circuited.
FEATURES
• Supply Current ................................................................... Typ. 0.8 mA (VIN = 30 V, Set VFB = 1.0 V)
• Standby Current ................................................................ Typ. 0 µA (VIN = 30 V, CE = L)
• Input Voltage Range .......................................................... 5 V to 30 V
• Output Voltage Range ....................................................... 0.8 V to 15 V, Adjustable using external resistors
• Feed Back Voltage Accuracy ............................................. 0.8 V with 1.5% accuracy
• Output Current ................................................................... 3 A*
• Oscillator Frequency .......................................................... 330 kHz to 1 MHz (Ver. A/B), 330 kHz (Ver. C/D),
500 kHz, (Ver. E/F), 1000 kHz (Ver. G/H)
• Maximum Duty Cycle ......................................................... Typ. 88%
• UVLO Detector Threshold ................................................. Typ. 3.6 V
• Soft-start Time ................................................................... Typ. 0.5 ms
• Peak Current Limit ............................................................. Typ. 4.5 A
• Thermal Shutdown ............................................................ Typ. 160°C
• Latch Type Protection ........................................................ Delay Time: Typ. 5 ms (Ver. A/C/E/G)
• Fold-back Type Protection ................................................. Fold-back Frequency: Ver. B: fosc x 1/4,
Ver. D: 83 kHz, Ver. F: 125 kHz, Ver. H: 250 kHz
• Package ............................................................................. HSOP-8E
* This is an approximate value. The output current depends on conditions and external parts.
R1242S
NO.EA-191-170607
2
APPLICATIONS
• Digital Home Appliances: Digital TVs, DVD Players
• Office Automation Equipment: Printers, Fax
• Hand-held Communication Equipment: Cameras, Video Recorders
• Battery-powered Equipment
SELECTION GUIDE
The oscillator frequency (Adjustable, Fixed: 330 kHz, 500 kHz, 1000 kHz) and the short-circuit protection type
(Latch, Fold-back) are user-selectable options.
Selection Guide
Product Name
Package
Quantity per Reel
Pb Free
Halogen Free
R1242S001
∗
-E2-FE
HSOP-8E 1,000 pcs Yes Yes
∗ : Specify the oscillator frequency and the short-circuit protection type.
Frequency
Latch Type
Fold-back Type
Adjustable
Yes
No
Adjustable
No
Yes
330 kHz
Yes
No
330 kHz
No
Yes
500 kHz
Yes
No
500 kHz
No
Yes
1000 kHz
Yes
No
1000 kHz
No
Yes
R1242S
NO.EA-191-170607
3
BLOCK DIAGRAM
R
S D
-
+
-
+
+
-
CE
RT
VFB
(Ver.A/B only)
VIN
Lx
BST
EXT
GND
Thermal Shutdown
Shutdown
Regulator Regulator
UVLO 5V
55mV
Shutdown
Oscillator
∗1
Limit Latch
Circuit(5msec)
∗1
MAXDUTY
SETPULSE
Reference
Soft Start
Circuit(0.5msec)
Current Slope
Circuit
Peak Current Limit
Circuit(4.5A)
0.8V
R1242S Block Diagram
∗1
Version
Oscillator Frequency
Short Protection
A Adjustable Latch Type
B
Adjustable
Fold-back Type
C
330 kHz
Latch Type
D
330 kHz
Fold-back Type
E
500 kHz
Latch Type
F
500 kHz
Fold-back Type
G
1000 kHz
Latch Type
H 1000 kHz Fold-back Type
R1242S
NO.EA-191-170607
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PIN DESCRIPTIONS
Top View
R1242
1 8
7
6
5
2
3
4
HSOP-8E Pin Configuration
R1242S001A/B Pin Description
Pin No.
Symbol
Description
1
CE
Chip Enable Pin, Active with “H”
2
EXT
Gete Drive Pin
3
BST
Bootstrap Pin
4
VIN
Power Supply Pin
5
Lx
Lx Switching Pin
6
GND
Ground Pin
7
VFB
Feedback Pin
8
RT
Frequency Setting Pin
∗ Tab is GND level. (They are connected to the reverse side of this IC.) The tab must be connected to the GND.
R1242S001C/D/E/F/G/H Pin Description
Pin No.
Symbol
Description
1
CE
Chip Enable Pin, Active with “H”
2
EXT
Gate Drive Pin
3
BST
Bootstrap Pin
4
VIN
Power Supply Pin
5
Lx
Lx Switching Pin
6
GND
Ground Pin
7
VFB
Feedback Pin
8
TEST
TEST Pin, OPEN or connect to GND
∗ Tab is GND level. (They are connected to the reverse side of this IC.) The tab must be connected to the GND.
R1242S
NO.EA-191-170607
5
ABSOLUTE MAXIMUM RATINGS
Absolute Maxim um Ratin gs (GND = 0 V)
Symbol
Item
Rating
Unit
VIN
Input Voltage
−0.3 V to 32 V
V
V
BST
Boost Pin Voltage
V
LX
−0.3 V to V
LX
+6 V
V
V
LX
Lx Pin Voltage
−0.3 V to V
IN
+0.3
V
V
CE
CE Pin Input Voltage
−0.3 V to V
IN
+0.3
V
VFB
VFB Pin Voltage
−0.3 V to 6 V
V
VEXT
EXT Pin Voltage
−0.3 V to 6 V
V
V
RT
/ V
TEST
RT/ TEST Pin Voltage
−0.3 V to 6 V
V
P
D
Power Dissipation (Standard Land Pattern)*
2.9
W
Tj
Junction Temperature Range
−40 to 125
ºC
Tstg
Storage Temperature Range
−55 to 125
ºC
* Refer to Power Dissipation for detailed information.
ABSOLUTE MAXIMUM RATINGS
Electronic and mechanical stress momentarily exceeded absolute maximum ratings may cause the permanent
damages and may degrade the life time and safety for both device and system using the device in the field.
The functional operation at or over these absolute maximum ratings is not assured.
RECOMMENDED OPERATING CON DITIONS
Recommended Operating Conditions
Symbol
Item
Rating
Unit
V
IN
Operating Input Voltage
5 to 30
V
Ta Operating Temperature Range −40 to 85 °C
RECOMMENDED OPERATING CONDITIONS
All of electronic equipment should be designed that the mounted semiconductor devices operate within the
recommended operating conditions. The semiconductor devices cannot operate normally over the recommended
operating conditions, even if when they are used over such conditions by momentary electronic noise or surge. And
the semiconductor devices may receive serious damage when they continue to operate over the recommended
operating conditions.
R1242S
NO.EA-191-170607
6
ELECTRICAL CHARACTERISTICS
Electrical Charac teristics (Unless otherwise noted, VIN = 12 V, Ta = 25ºC)
Symbol
Item
Conditions
Min.
Typ.
Max.
Unit
I
IN
VIN Consumption Current
V
IN
= 30 V, V
FB
= 1.0 V
0.45
0.80
1.20
mA
VUVLO2 UVLO Detect Voltage Rising
V
UVLO2
−0.5
V
UVLO2
−0.3
V
V
UVLO1
UVLO Released Voltage
Falling
3.7
4.0
4.3
V
V
FB
VFB Voltage Tolerance
0.788
0.800
0.812
V
ΔVFB/ΔTa
VFB Voltage Temperature
Coefficient
−40ºC ≤ Ta ≤ 85ºC ±100
ppm/
ºC
fosc
Oscillator Frequency (Ver. A/B)
RT = GND
900
1000
1100
kHz
RT = floating
290
330
375
kHz
RT = 120 kΩ
450
500
550
kHz
Oscillator Frequency (Ver. C/D)
300
330
370
kHz
Oscillator Frequency (Ver. E/F)
450
500
550
kHz
Oscillator Frequency (Ver. G/H)
900
1000
1100
kHz
fFLB Fold back Frequency
V
FB
< 0.56,
RT = GND (Ver. B)
250
kHz
V
FB
< 0.56 (Ver. D)
83
kHz
V
FB
< 0.56 (Ver. F)
125
kHz
V
FB
< 0.56 (Ver. H)
250
kHz
Maxduty Maximum Duty Cycle
RT = 120 kΩ (Ver. A/B)
VIN = 9 V (Ver. C/D)
82 88 95 %
tstart
Soft Start Time
0.5
ms
tDLY
Delay Time for Latch Protection
(Ver. A/C/E/G)
5
ms
RLXH
Lx High Side Switch
ON Resistance
0.1 Ω
ILXHOFF
Lx High Side Switch
Leakage Current
0 20 µA
ILIMLXH
Lx High Side Switch
Limited Current
4.5 A
V
CEH
CE “H” Input Voltage
1.7
V
V
CEL
CE “L” Input Voltage
0.4
V
I
FB
VFB Input Current
−1.0
1.0
µA
I
CEH
CE “H” Input Current
−1.0
1.0
µA
I
CEL
CE “L” Input Current
−1.0
1.0
µA
TTSD
Thermal Shutdown
Detect Temperature
Hysteresis: 30ºC 160 ºC
Istandby
Standby Current
V
IN
= 30 V, V
CE
= 0 V
0
20
µA
R
RISE
EXT “H” Switch On Resistance
I
EXT
= −100 mA
6
11
Ω
R
FALL
EXT “L” Switch On Resistance
I
EXT
= 100 mA
0.5
1.5
Ω
VEXTLIM
Detecting Voltage for Low
Side Switch Current Limit
36 55 76 mV
R1242S
NO.EA-191-170607
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OPERATING DESCRIPTIONS
OPERATION OF STEP-DOWN DC/DC CONVERTER AND OUTPUT CURRENT
The step-down DC/DC converter charges energy in the inductor (L) when the Lx transistor turns on, and
discharges the energy from the inductor when Lx transistor turns off and controls with less energy loss, so that
a lower output voltage (VOUT) than the input voltage (VIN) can be obtained. The operation of the step-down
DC/DC converter is explained in the following figures.
Highside Tr.
L
Lowside FET
VIN
i1
VOUT
C
OUT
i2
GND
ILmax
ILmin
ton
toff
T=1/fosc
IL
Iconst
t
Basic Circuit
Inductor Current flo wing through Inductor
Step1. The highside transistor turns on and the inductor current (i1) flows, L is charged with energy. At this
moment, i1 increases from the minimum inductor current (ILmin), which is 0 A, and reaches the
maximum inductor current (ILmax) in proportion to the on-time period (ton) of the highside transistor.
Step2.
When the highside transistor turns off, L tries to maintain IL at ILmax, so L turns the lowside FET on
and the inductor current (i2) flows into L.
Step3.
i2 decreases gradually and reaches ILmin in proportion to the off-time period (toff) of the highside
transistor.
In the case of PWM mode, VOUT is maintained by controlling ton. During PWM mode, the oscillator frequency
(fosc) is being maintained constant.
When the step-down DC/DC operation is constant, ILmin and ILmax during ton of highside transistor would be
same as during toff of highside transistor.
R1242S
NO.EA-191-170607
8
APPLICATION INFORMATION
TYPICAL APP LICAT IO N CI RCUI T
FET
VFB
GND
BST
Lx
CE
Cbst
R1
R2
L
Cspd
220pF
RT EXT
330kHz
Rspd
"H"active
(recommendation)
(Rt=Floating)
R1242S001A/B Typical Application Circuit, VOUT = 1.8 V, 330 kHz
FET
VFB
GND
BST
Lx
CE
Cbst
R1
R2
L
Cspd
220pF
TEST EXT
Rspd
GND "H"active
R1242S001C/D Typical Application Circuit, VOUT = 1.2 V, 330 kHz
Recommendation Parts
C
IN
10
µ
F, KTS500B106M55N0T00 (Nippon Chemi-Con)
C
OUT
22 µF, GRM31CR71A226M (Murata)
Cbst
0.1
µ
F, GRM21BB11H104KA01L (Murata)
L
4.7 µH, VLF10045T-4R7N6R1 (TDK)
FET
TPN11003NL (TOSHIBA)
15Ω
16kΩ
20kΩ
5.1kΩ
COUT
22µF × 2
CIN
10µF 0.1µF 4.7µH
VIN VIN
V
OUT
V
OUT
C
OUT
22µF × 2
0.1µF
5.1kΩ
VIN
V
IN
C
IN
10µF
8kΩ
16kΩ
15Ω
(recommendation)
1.2V
1.8V
4.7µF
R1242S
NO.EA-191-170607
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VFB
GND
BST
Lx
CE
Cbst
R1
R2
L
Cspd
470pF
RT EXT
1.2V
Rspd
FET
"H"active
(recommendation)
500kHz
Rbst
R1242S001A/B Typical Application Circuit, VOUT = 1.2 V, 500 kHz
VFB
GND
BST
Lx
CE
Cbst
R1
R2
L
Cspd
470pF
TEST EXT
1.2V
Rspd
FET
"H"active
(recommendation)
Rbst
R1242S001E/F Typical Application Circuit, VOUT = 1.2 V, 500 kHz
Recommendation Parts
C
IN
10 µF, KTS500B106M55N0T00 (Nippon Chemi-Con)
C
OUT
22
µ
F, GRM31CR71A226M (Murata)
Cbst
0.1 µF, GRM21BB11H104KA01L (Murata)
L
2.2
µ
H, RLF7030T-2R2M5R4 (TDK)
FET
TPN11003NL (TOSHIBA)
15Ω
8kΩ
VIN
V
IN
16kΩ
C
IN
10µF
V
OUT
5.1kΩ
15Ω
0.1µF
15Ω
8kΩ
16kΩ
V
IN
VIN
C
IN
10µF
(Rt=120kΩ)
C
OUT
22µF × 2
V
OUT
C
OUT
22µF × 2
0.1µF
15Ω
5.1kΩ
2.2µH
2.2µH
R1242S
NO.EA-191-170607
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VFB
GND
BST
Lx
CE
Cbst
R1
R2
L
Cspd
100pF
RT EXT
3.3V
FET
"H"active
(recommendation)
1000kHz
(Rt=GND)
R1242S001A/B Typical Application Circuit, VOUT = 3.3 V, 1000 kHz
VFB
GND
BST
Lx
CE
Cbst
R1
R2
L
Cspd
100pF
TEST EXT
GND
3.3V
FET
Rspd
"H"active
(recommendation)
R1242S001G/H T y pical Application Circuit, VOUT = 3.3 V, 1000 kHz
Recommendation Parts
C
IN
10 µF, KTS500B106M55N0T00 (Nippon Chemi-Con)
C
OUT
10
µ
F, GRM31CR71E106K (Murata)
Cbst
0.1 µF, GRM21BB11H104KA01L (Murata)
L
4.7
µ
H, VLF10045T-4R7N6R1 (TDK)
FET
TPN11003NL (TOSHIBA)
V
IN
VIN
V
IN
VIN
C
IN
10µF
C
IN
10µF
0.1µF
4.7µH
V
OUT
V
OUT
4.7µH
0.1µF
5.1kΩ
5.1kΩ
50kΩ
16kΩ
50kΩ
16kΩ
15Ω
C
OUT
C
OUT
10µF
10µF
R1242S
NO.EA-191-170607
11
THE VOLTAGE BETWEEN THE BST PIN AND Lx PIN
In the application of the "Bootstrap" Start switching regulator, the R1242S, when the Lx pin voltage becomes
equal or less than the BST voltage supply regulator, the BST voltage supply regulator charges the capacitor,
Cbst. By this function, even if the Lx pin becomes "H", the high side switch composed of an Nch transistor can
be turned on.
Under the condition of PWM operation, the BST voltage supply regulator of the R1242S, while the Lx pin
voltage is "L", the voltage between BST pin and GND pin is controlled and maintained the level as of 5 V, then
regardless of the voltage drop by the bootstrap switch, the BST voltage supply regulator can drive a high side
switch and the low side external MOSFET.
However, if either the maximum duty cycle limit or the low side switch current limit is detected, sampling of the
voltage between BST pin and Lx pin is halted, and the output of the BST voltage supply regulator becomes
stacked at 5 V as same as a conventional "Bootstrap" Start switching regulator. Depending on the external
FET gate capacitance, excessive voltage drop can be caused by bootstrap switching, and also switching failure
can be caused by insufficient electrical charge on Cbst. As a result, the desired voltage may not be obtained.
Higher frequency requires higher electrical charge. Special attention is required in case of using the device at
1000 kHz.
Events that may trigger such trouble are
(A) Detect of the current limit of low side switch at light load
(B) VOUT > VIN / 2 and starting the circuit without using CE pin individually or CE pin and VIN are tied and
controlled at the same time.
(C) The voltage difference between the input and the output is small and usage at maximum duty cycle is
expected.
The countermeasure to avoid the trouble caused by the events above is to use an external diode, Dbst shown
in the figure below. The Dbst will charge CBST and prevents the abnormal switching. The supply voltage to Dbst
should be in the range from 4.5 V to 6.0 V and if the set output voltage of the R1242S is in the range from 4.5
V to 6.0 V, then the output voltage can be used directly as the supply voltage of Dbst. The voltage rating of the
diode, Dbst must be VIN or more, the forward current of Dbst must be 20 mA or more. Other specifications of
the Dbst are not important.
R1242S
NO.EA-191-170607
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Application Circuit Example
If the auxiliary power source for BST 4.5 V to 6.0 V does not have a bypass capacitor, set 0.1 µF or higher
bypass capacitor between the auxiliary power source and GND.
FB
GND
BST
Lx
CE
Cbst
R1
R2
L
Cspd
RT EXT FET
"H"active
(recommendation)
1000kHz
(Rt=GND)
(
) Dbst
*if necessary
4.5 V to 6.0 V
V
IN
C
IN
V
IN
V
OUT
C
OUT
R1242S
NO.EA-191-170607
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OPERATING FREQUENCY (VERSION A/B)
In the application circuit of the R1242S001A/B, the 330 kHz operation is selected by leaving Rt open.
Connecting a 200 kΩ to 0 Ω resistor between Rt (pin 8) and ground can be used to set the switching frequency
to approximately 450 kHz to 1000 kHz. To calculate the Rt resistor, use the equation below:
*(Between 330 kHz and 450 kHz switching frequency can be also set by connecting the appropriate resistor
according to the next equation.)
Rt = 120000 / (2 / (1000000 / fosc - 1) - 1) [Ω]
The switching frequency vs. Rt value is shown in Figure 1 and Figure 2.
Figure 1. Linearscale
Figure 2. Logscale
R1242S
NO.EA-191-170607
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OUTPUT CURRENT AND SELECTION OF EXTERNAL COMPONENTS
The following equations explain the relationship between output current and peripheral components.
Ripple Current P-P value is described as IRP, ON resistance of Highside Tr. is described as RONH, ON resistance
of Lowside FET is described as RONL, and DC resistance of the inductor is described as RL.
First, when Highside Tr. is “ON”, the following equation is satisfied.
VIN = VOUT + (RONH + RL) × IOUT + L × IRP / ton ................................................................................ Equation 3
Second, when Highside Tr. is "OFF" (Lowside FET is "ON"), the following equation is satisfied.
L × IRP / toff = RONL × IOUT + VOUT + RL × IOUT .................................................................................. Equation 4
Put Equation 4 into Equation 3 to solve ON duty of Highside Tr. (DON = ton / (toff + ton)):
DON = (VOUT + (RONL + RL) × IOUT) / (VIN + (RONL – RONH) × IOUT) ..................................................... Equation 5
Ripple Current is described as follows:
IRP = (VIN − VOUT − RONH × IOUT − RL × IOUT) × DON / fosc / L ........................................................... Equation 6
Peak current that flows through L, and LX Tr. is described as follows:
ILmax = IOUT + IRP / 2 ...................................................................................................................... Equation 7
Notes: Please consider ILmax when setting conditions of input and output, as well as selecting the external
components. The above calculation formulas are based on the ideal operation of the ICs in continuous mode.
R1242S
NO.EA-191-170607
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TECHNICAL NOTES
The performance of a power source circuit using this device is highly dependent on a peripheral circuit. A
peripheral component or the device mounted on PCB should not exceed its voltage, current or power ratings.
When designing a peripheral circuit, please be fully aware of the following points. (Refer to our PCB layout for
detailed information).
• External components must be connected as close as possible to the ICs and their wiring must be short as
possible. Especially, the capacitor must be connected with the shortest distance between VIN and GND pins.
If the impedances of the power supply line and the GND line are high, the operation can be unstable due
to the switching current which fluctuates the electric potential of the inside the ICs. The impedances of
power supply line and GND line must be as low as possible. When designing their wirings, it is necessary
to give careful consideration to the large current flowing into the power supply, GND, Lx, VOUT and inductor.
The wiring of output voltage setting resistance (R1) and the wiring of inductor must be separated from load
wiring.
• The ceramic capacitors with low ESR (Equivalent Series Resistance) must be used for the ICs. The
recommended value for the CIN capacitor between VIN and GND is equal or more than 10 µF.
• The selections of inductor (L) and output capacitor (COUT) can be different according to the ICs’ oscillation
frequencies, output voltages and input voltages. Refer to “Recommended Value for Each Output Voltage”
on the next page and select the most suitable values at the conditions of use. The internal phase
compensation is built in the ICs; therefore, if the values selected are largely deviated from the
recommended values, the operation may result in unstable.
• The over current protection circuit could be influenced by self-heating of the ICs and heat dissipation of the
PCB environment.
• In order to prevent self-turning on, FET with smaller gate resistance and with smaller Cgd/ Cgs (capacities
between gate drains and the capacities between gate sources) should be selected.
• The output voltage (VOUT) can be calculated as VOUT = VFB × (R1 + R2) / R2. The various voltage settings
are possible by changing the values of R1 and R2. However, R2 value must be equal or less than 16 kΩ.
• Rspd prevents the deterioration in the regulation characteristics, which is caused by spike noise occurred
in VOUT. Spike noise is largely depending on the PCB layout. If the PCB board layout is optimized, there is
no need of Rspd; however, if the spike noise is a concern, Rspd with 15 Ω or so should be used.
• After the completion of soft start, latch function (Ver. A, C, E, G) starts to work. The internal counter starts
counting up when the over current protection circuit activates the limited current detection. When the
internal counter counts up to 5ms, which is a typical delay time for latch protection, the latch function turns
off the output. The turned off output can be reset when CE pin is changed to “L”, and also VIN pin voltage
is became less than 3.6 V (Typ.), which is UVLO detecting voltage. If the output voltage increases more
than the setting voltage (VFB pin voltage is 0.8 V (Typ.)) within the delay time for latch protection, the
counter restores the default. If the power-supply voltage’s start-up is slow and the output voltage is not
reached to the setting voltage within the delay time for latch protection after the soft start, the careful
attention is required.
R1242S
NO.EA-191-170607
16
• After the soft start, fold back function (Ver. B, D, F, H) starts to work. The fold back function limits the
oscillation frequencies into 1/4 when (VFB pin voltage decreases to less than 0.56 V (Typ.)). If the power-
supply voltage’s start-up is slow and the output voltage is not reached to the 70% of the setting voltage
even for a short period of time after the soft start, the careful attention is required.
• The ICs are not supporting Nonsynchronous rectification using a diode as a rectifier.
The following table shows the recommended values for setting frequency and setting output voltage.
Recommended Values
330 kHz
V
OUT
[V] 0.8 1.2 1.2 1.5 1.5 1.8 1.8 2.5 2.5 3.3 5 9 15
VIN Range [V]
5~14
~12
9~30
5~10
10~30
5~15
12~30
5~15
12~30
5~30
7~30
15~30
20~30
L [
µ
H]
2.2
10
4.7
10
4.7
15
4.7
15
10
15
15
15
15
COUT [µF]
100
22
44
22
44
22
44
22
22
22
22
22
22
Cspd [pF]
-
470
470
220
220
470
220
220
220
220
220
220
220->100
R1 [Ω]
-
8000
8000
14000
14000
20000
20000
34000
34000
50000
84000
164000
284000
R2 [Ω]
-
16000
16000
16000
16000
16000
16000
16000
16000
16000
16000
16000
16000
500 kHz
VOUT [V]
0.8
1.0
1.2
1.5
1.5
1.8
1.8
2.5
3.3
5
9
12
15
VIN Range [V]
~9
~10
5~15
5~18
7~19
5~23
9~21
5~29
5~30
7~30
15~30
18~30
20~30
L [
µ
H]
2.2
2.2
2.2
4.7
2.2
4.7
2.2
10
10
10
10
15
15
C
OUT
[µF] 100 44 44 44 44 44 44 22 22 22 22 22 22
Cspd [pF]
-
1000
470
220
220
220
220
220
220
220
220
220
220
R1 [Ω]
-
4000
8000
14000
14000
20000
20000
34000
50000
84000
164000
224000
284000
R2 [Ω]
-
16000
16000
16000
16000
16000
16000
16000
16000
16000
16000
16000
16000
1000 kHz
VOUT [V]
0.8
1.2
1.5
1.8
2.5
3.3
5
5
9
15
VIN Range [V]
5~7
5~10
5~15
5~15
5~19
5~30
7~12
12~30
15~30
20~30
L [µH]
1.5
2.2
2.2
4.7
4.7
4.7
4.7
4.7
4.7
10
COUT [µF]
100
22
22
22
22
10
10
10
10
10
Cspd [pF]
-
220
100
220
220
100
100
56
56
100
R1 [Ω]
-
8000
14000
20000
34000
50000
84000
84000
164000
284000
R2 [Ω] - 16000 16000 16000 16000 16000 16000 16000 16000 16000
R1242S
NO.EA-191-170607
17
Recommended External Components
Symbol
Condition
Value
Parts Name
MFR
C
IN
10
µ
F/ 50 V
UMK325BJ106MM-P
TAIYO YUDEN
10
µ
F/ 50 V
CGA6P3X7S1H106K
TDK
10
µ
F/ 50 V
KTS500B106M55N0T00
Nippon Chemi-Con
10
µ
F/ 10 V
GRM31CR71A106K
Murata
C
OUT
V
OUT
> 10 V
10
µ
F/ 50 V
KTS500B106M55N0T00
Nippon Chemi-Con
10 V > V
OUT
> 1.8 V
10
µ
F/ 25 V
GRM31CR71E106K
Murata
V
OUT
< 1.8 V
22
µ
F/ 10 V
GRM31CR71A226M
Murata
(at the diode rectifier, the
specified condition only)
CBST
0.1
µ
F/ 50 V
GRM21BB11H104KA01L Murata
L 1.5 µH ±30%/ 4.0 A 1.5 µH SLF7055T-1R5N4R0-3PF TDK
2.2 µH ±20%/ 5.4 A
2.2 µH
RLF7030T-2R2M5R4
TDK
4.7
µ
H ±30%/ 6.1 A
4.7
µ
H
VLF10045T-4R7N6R1 TDK
10 µH ±20% 6.2 A
10 µH
VLF12060T-100M6R2
TDK
15
µ
H ±20% 5.0 A
15
µ
H
VLF12060T-150M5R0
TDK
FET
30 V/11 A
12.6 mΩ
TPN11003NL
TOSHIBA
30 V/20 A 10.2 mΩ TPN8R903NL TOSHIBA
30 V/6 A
56 mΩ
SSM3K335R
TOSHIBA
R
CE
The diode is connected between CE pin and VIN pin as an ESD protection element.
If there is a possibility that the CE pin voltage becomes higher than the VIN pin voltage,
it is recommended to insert a 5 kΩ resistance or more in order to prevent the large current
flowing from CE pin into VIN pin.
R1242S
NO.EA-191-170607
18
TECHNICAL NOTES ON PCB LAYOUT PATTERN
1. Make the power line (VIN and GND) broad to avoid the generation of the parasitic inductance. Place
the bypass capacitor (CIN) between VIN and GND as close as possible to each other.
2. Make the wire between Lx pin and the inductor as short as possible to avoid the generation of the
parasitic inductance. (This Evaluation Board is designed for the testing. Therefore, the inductor is
large, a diode is connectable, and the large space is secured for Lx part.)
3. The ripple current passes through the output capacitor; therefore, if the COUT’s GND is placed in the
outside of the CIN’s GND side and the IC’s GND, the IC can be easily affected by the noise.
4. Mount RUP, RBOT, CSPD and RSPD on the place where the FB pin is close and the inductor and the BST
pin are away.
5. Start the feedback from where the output capacitor (COUT) is close.
PCB LAYOUT
TOP VIEW
BOTTOM VIEW
R1242S
NO.EA-191-170607
19
TYPICAL CHARACTERISTICS
1)FB Voltage
2)Oscil l ator Frequency(ver.A,B Rt=f l oat ing)
3)Oscil l ator Frequency(ver.A,B Rt=G ND)
4)Oscillator Frequency(ver.A,B Rt=120kΩ)
5)Oscil l ator Frequency(ver.C,D) 6) Oscil l ator Frequency(ver.E,F)
0.792
0.794
0.796
0.798
0.800
0.802
0.804
0.806
0.808
-40 -15 10 35 60 85
VFB(V)
Ta(°C)
(VIN=12V)
270
290
310
330
350
370
390
-40 -15 10 35 60 85
fosc(kHz)
Ta(°C)
(VIN=12V)
800
850
900
950
1000
1050
1100
1150
1200
-40 -15 10 35 60 85
fosc(kHz)
Ta(°C)
(VIN=12V)
400
450
500
550
600
-40 -15 10 35 60 85
fosc(kHz)
Ta(°C)
(VIN=12V)
400
450
500
550
600
-40 -15 10 35 60 85
fosc(kHz)
Ta(°C)
(VIN=12V)
270
290
310
330
350
370
390
-40 -15 10 35 60 85
fosc(kHz)
Ta(°C)
(VIN=12V)
R1242S
NO.EA-191-170607
20
7) Oscil lator Frequency(ver.G,H)
8) Fold-Back Frequency(ver.A, B Rt = G ND)
9) Fold-Back Frequency(ver.C,D) 10) Fold-Back Frequency(ver.E,F)
11) Fold-Back Frequency(ver.G,H)
12) Maxduty(ver.A, B Rt= floating)
-4 -4 -4
(VIN=12V)
70.0
75.0
80.0
85.0
90.0
95.0
100.0
-40 -15 10 35 60 85
Ta(°C)
Maxduty(%)
(VIN=12V)
800
850
900
950
1000
1050
1100
1150
1200
-40 -15 10 35 60 85
Ta(°C)
fosc(kHz)
(VIN=12V)
150
200
250
300
350
-40 -15 10 35 60 85
Ta(°C)
fFLD(kHz)
(VIN=12V)
45
55
65
75
85
95
105
115
-40 -15 10 35 60 85
Ta(°C)
fFLD(kHz)
(VIN=12V)
80
90
100
110
120
130
140
150
160
-40 -15 10 35 60 85
Ta(°C)
fFLD(kHz)
(VIN=12V)
150
200
250
300
350
-40 -15 10 35 60 85
Ta(°C)
fFLD(kHz)
R1242S
NO.EA-191-170607
21
13) Maxduty(ver.C,D) 14) Maxduty(ver.G,H)
15) Maxduty(ver.A, B Rt = G ND) 16) Maxduty(ver.C,D)
17) Maxduty(ver.G,H)
(V
IN
=12V)
70.0
75.0
80.0
85.0
90.0
95.0
100.0
-40 -15 10 35 60 85
Ta(°C)
Maxduty(%)
(V
IN
=12V)
70.0
75.0
80.0
85.0
90.0
95.0
100.0
-40 -15 10 35 60 85
Ta(°C)
Maxduty(%)
(Ta=25℃)
50.0
60.0
70.0
80.0
90.0
100.0
510 15 20 25 30
V
IN
[V]
Maxduty(%)
(Ta=25℃)
70.0
75.0
80.0
85.0
90.0
95.0
100.0
510 15 20 25 30
V
IN
[V]
Maxduty(%)
(Ta=25℃)
70.0
75.0
80.0
85.0
90.0
95.0
100.0
510 15 20 25 30
V
IN
[V]
Maxduty(%)
R1242S
NO.EA-191-170607
22
18)Efficiency vs Load Current
fosc=330kHz
V
OUT
:0.8V V
OUT:3.3V
V
OUT
:15V
fosc=500kHz
V
OUT
:0.8V V
OUT:3.3V
(Ta=25℃)
0
20
40
60
80
100
110 100 1000 10000
I
OUT
[mA]
Efficiency [%]
Vin= 5 V
Vin= 9 V
Vin= 12 V
(Ta=25℃)
0
20
40
60
80
100
110 100 1000 10000
I
OUT
[mA]
Efficiency [%]
Vin= 24 V
Vin= 30 V
V
IN=24V
VIN=30V
(Ta=25℃)
0
20
40
60
80
100
110 100 1000 10000
I
OUT
[mA]
Efficiency [%]
Vin= 5 V
Vin= 9 V
V
IN=5V
VIN=9V
(Ta=25℃)
0
20
40
60
80
100
110 100 1000 10000
I
OUT
[mA]
Efficiency [%]
Vin= 5 V
Vin= 9 V
Vin= 12 V
Vin= 24 V
Vin= 30 V
V
IN
=5V
V
IN
=9V
V
IN
=12V
V
IN
=24V
V
IN
=30V
(Ta=25℃)
0
20
40
60
80
100
110 100 1000 10000
I
OUT
[mA]
Efficiency[%]
Vin= 5 V
Vin= 9 V
Vin= 12 V
Vin= 24 V
Vin= 30 V
V
IN
=5V
V
IN
=9V
V
IN
=12V
V
IN
=24V
V
IN
=30V
V
IN
=5V
VIN=9V
VIN=12V
R1242S
NO.EA-191-170607
23
V
OUT
:15V
fosc=1000kHz
V
OUT
:0.8V V
OUT
:3.3V
V
OUT
:15V
(Ta=25℃)
0
20
40
60
80
100
110 100 1000 10000
I
OUT
[mA]
Efficiency [%]
Vin= 24 V
Vin= 30 V
V
IN
=24
V
V
IN
=30
V
(Ta=25℃)
0
20
40
60
80
100
110 100 1000 10000
I
OUT
[mA]
Efficiency [%]
Vin= 5
V
V
IN
=5V
(Ta=25℃)
0
20
40
60
80
100
110 100 1000 10000
I
OUT
[mA]
Efficiency [%]
Vin= 5 V
Vin= 9 V
Vin= 12 V
V
IN
=5V
V
IN
=9V
V
IN
=12V
(Ta=25℃)
0
20
40
60
80
100
110 100 1000 10000
I
OUT
[mA]
Efficiency [%]
Vin=24V
Vin=30V
V
IN
=24V
V
IN
=30V
R1242S
NO.EA-191-170607
24
19)Load Regulation
fosc=330kHz
V
OUT
:0.8V V
OUT
:3.3V
V
OUT
:15V
fosc=500kHz
V
OUT
:0.8V V
OUT
:3.3V
(Ta=25℃)
0.75
0.76
0.77
0.78
0.79
0.8
0.81
0.82
0.83
0.84
0.85
0500 1000 1500 2000 2500 3000
I
OUT
[mA]
V
OUT
[V]
Vin= 5 V
Vin= 9 V
Vin= 12 V
V
IN
=5V
V
IN
=9V
V
IN
=12V
(Ta=25℃)
14
14.2
14.4
14.6
14.8
15
15.2
15.4
15.6
15.8
16
0500 1000 1500 2000 2500 3000
I
OUT
[mA]
V
OUT
[V]
Vin= 24 V
Vin= 30 V
V
IN
=24V
V
IN
=30V
(Ta=25℃)
3.1
3.15
3.2
3.25
3.3
3.35
3.4
3.45
3.5
0500 1000 1500 2000 2500 3000
I
OUT
[mA]
V
OUT
[V]
Vin= 5 V
Vin= 9 V
Vin= 12 V
Vin= 24 V
Vin= 30 V
VIN=5V
VIN=9V
VIN
=12V
V
IN
=24V
V
IN
=30V
(Ta=25℃)
0.75
0.76
0.77
0.78
0.79
0.8
0.81
0.82
0.83
0.84
0.85
0500 1000 1500 2000 2500 3000
I
OUT
[mA]
V
OUT
[V]
Vin= 5 V
Vin= 9 V
V
IN
=5V
V
IN
=9V
(Ta=25℃)
3.1
3.15
3.2
3.25
3.3
3.35
3.4
3.45
3.5
0500 1000 1500 2000 2500 3000
I
OUT
[mA]
V
OUT
[V]
Vin= 5 V
Vin= 9 V
Vin= 12 V
Vin= 24 V
Vin= 30 V
VIN=5V
VIN=9V
VIN
=12V
V
IN
=24V
V
IN
=30V
R1242S
NO.EA-191-170607
25
V
OUT
:15V
fosc=1000kHz
V
OUT
:0.8V V
OUT
:3.3V
V
OUT
:15V
(Ta=25℃)
14
14.2
14.4
14.6
14.8
15
15.2
15.4
15.6
15.8
16
0500 1000 1500 2000 2500 3000
I
OUT
[mA]
V
OUT
[V]
Vin= 24 V
Vin= 30 V
V
IN
=24V
V
IN
=30V
(Ta=25℃)
0.75
0.76
0.77
0.78
0.79
0.8
0.81
0.82
0.83
0.84
0.85
0500 1000 1500 2000 2500 3000
I
OUT
[mA]
V
OUT
[V]
Vin= 5
V
V
IN
=5V
(Ta=25℃)
2.8
2.9
3
3.1
3.2
3.3
3.4
3.5
3.6
0500 1000 1500 2000 2500 3000
I
OUT
[mA]
V
OUT
[V]
Vin= 5 V
Vin= 9 V
Vin= 12 V
V
IN
=5V
V
IN
=9V
V
IN
=12V
(Ta=25℃)
14
14.2
14.4
14.6
14.8
15
15.2
15.4
15.6
15.8
16
0500 1000 1500 2000 2500 3000
I
OUT
[mA]
V
OUT
[V]
Vin=24V
Vin=30V
V
IN
=24V
V
IN
=30V
R1242S
NO.EA-191-170607
26
20)Line Regulation
fosc=330kHz
VOUT:0.8V VOUT:3.3V
VOUT:15V
fosc=500kHz
VOUT:0.8V VOUT:3.3V
(Ta=25℃)
0.75
0.76
0.77
0.78
0.79
0.80
0.81
0.82
0.83
0.84
0.85
510 15 20 25 30
V
IN
(V)
V
OUT
[V]
Iout=1mA
Iout=100mA
Iout=500mA
Iout=1500mA
Iout=3000mA
IOUT=1mA
IOUT=100mA
IOUT=500mA
IOUT=1500mA
IOUT=3000mA
(Ta=25℃)
3.10
3.15
3.20
3.25
3.30
3.35
3.40
3.45
3.50
510 15 20 25 30
V
IN
(V)
V
OUT
[V]
Iout=1mA
Iout=100mA
Iout=500mA
Iout=1500mA
Iout=3000mA
(Ta=25℃)
14.0
14.2
14.4
14.6
14.8
15.0
15.2
15.4
15.6
15.8
16.0
20 25 30
V
IN
(V)
V
OUT
[V]
Iout=1mA
Iout=100mA
Iout=500mA
Iout=1500mA
Iout=3000mA
I
OUT
=1mA
I
OUT
=100mA
I
OUT
=500mA
I
OUT
=1500mA
I
OUT
=3000mA
(Ta=25℃)
0.75
0.76
0.77
0.78
0.79
0.80
0.81
0.82
0.83
0.84
0.85
5 6 7 8
V
IN
(V)
V
OUT
[V]
Iout=1mA
Iout=100mA
Iout=500mA
Iout=1500mA
Iout=3000mA
IOUT=1mA
IOUT=100mA
IOUT=500mA
IOUT=1500mA
IOUT=3000mA
(Ta=25℃)
3.10
3.15
3.20
3.25
3.30
3.35
3.40
3.45
3.50
510 15 20 25 30
V
IN
(V)
V
OUT
[V]
Iout=1mA
Iout=100mA
Iout=500mA
Iout=1500mA
Iout=3000mA
IOUT=1mA
IOUT=100mA
IOUT=500mA
IOUT=1500mA
IOUT=3000mA
IOUT=1mA
IOUT=100mA
IOUT=500mA
IOUT=1500mA
IOUT=3000mA
R1242S
NO.EA-191-170607
27
V
OUT
:15V
fosc=1000kHz
V
OUT
:0.8V V
OUT
:3.3V
V
OUT
:15V
(Ta=25℃)
14.0
14.2
14.4
14.6
14.8
15.0
15.2
15.4
15.6
15.8
16.0
20 25 30
V
IN
(V)
V
OUT
[V]
Iout=1mA
Iout=100mA
Iout=500mA
Iout=1500mA
Iout=3000mA
I
OUT
=1mA
I
OUT
=100mA
I
OUT
=500mA
I
OUT
=1500mA
I
OUT
=3000mA
(Ta=25℃)
14.0
14.2
14.4
14.6
14.8
15.0
15.2
15.4
15.6
15.8
16.0
20 25 30
V
IN
(V)
V
OUT
[V]
Iout=1mA
Iout=100mA
Iout=500mA
Iout=1500mA
Iout=2000mA
I
OUT
=1mA
I
OUT
=100mA
I
OUT
=500mA
I
OUT
=1500mA
I
OUT
=3000mA
(Ta=25℃)
0.75
0.76
0.77
0.78
0.79
0.80
0.81
0.82
0.83
0.84
0.85
5 6 7 8
V
IN
[V]
V
OUT
[V]
Iout=1mA
Iout=100mA
Iout=500mA
Iout=1500mA
Iout=3000mA
I
OUT
=1mA
I
OUT
=100mA
I
OUT
=500mA
I
OUT
=1500mA
I
OUT
=3000mA
(Ta=25℃)
3.10
3.15
3.20
3.25
3.30
3.35
3.40
3.45
3.50
510 15 20 25 30
V
IN
(V)
V
OUT
[V]
Iout=1mA
Iout=100mA
Iout=500mA
Iout=1500mA
Iout=3000mA
I
OUT
=1mA
I
OUT
=100mA
I
OUT
=500mA
I
OUT
=1500mA
I
OUT
=3000mA
POWER DISSIPATION HSOP-8E
Ver. A
i
The power dissipation of the package is dependent on PCB material, layout, and environmental conditions.
The following conditions are used in this measurement.
Measurement Conditions
Ultra-High Wattage Land Pattern
Environment Mounting on Board (Wind Velocity = 0 m/s)
Board Material Glass Cloth Epoxy Plastic (Four-Layer Board)
Board Dimensions 76.2 mm × 114.3 mm × 0.8 mm
Copper Ratio Outer Layers (First and Fourth Layers): Approx. 95% of 50 mm Square
Inner Layers (Second and Third Layers): Approx. 100% of 50 mm Square
Through-holes φ 0.4 mm × 21 pcs
Measurement Result ( Ta = 2 5 °C, Tjmax = 125°C)
Ultra-High Wattage Land Pattern
Power Dissipation 2.9 W
Thermal Resistance
θja = (125 − 25°C) / 2.9 W = 35°C/W
θjc = 10°C/W
IC Mount Area (mm)
Power Dissipation vs. Ambient Temperature
Measurement Board Pattern
Power Dissipation (W)
0
25 50 75 100 125 150
Ambient Temperature (°C)
4.0
3.0
2.0
1.0
0
85
Ultra-
High Wattage Land Pattern
2.9
40
50
76.2
114.3
50
PACKAGE DIMENSIONS
HSOP-8E
i
HSOP-8E Package Dimensions
∗ The tab on the bottom of the package shown by blue circle is substrate potential (GND). It is recommended that this
tab be connected to the ground plane on the board but it is possible to leave the tab floating.
∗
Ricoh is committed to reducing the environmental loading materials in electrical devices
with a view to contributing to the protection of human health and the environment.
Ricoh has been providing RoHS compliant products since April 1, 2006 and Halogen-free products since
April 1, 2012.
Halogen Free
https://www.e-devices.ricoh.co.jp/en/
Sales&SupportOffices
RicohElectronicDevicesCo.,Ltd.
Shin-YokohamaOffice(InternationalSales)
2-3,Shin-Yokohama3-chome,Kohoku-ku,Yokohama-shi,Kanagawa,222-8530,Japan
Phone:+81-50-3814-7687Fax:+81-45-474-0074
RicohAmericasHoldings,Inc.
675CampbellTechnologyParkway,Suite200Campbell,CA95008,U.S.A.
Phone:+1-408-610-3105
RicohEurope(Netherlands)B.V.
SemiconductorSupportCentre
Prof.W.H.Keesomlaan1,1183DJAmstelveen,TheNetherlands
Phone:+31-20-5474-309
RicohInternationalB.V.-GermanBranch
SemiconductorSalesandSupportCentre
OberratherStrasse6,40472Düsseldorf,Germany
Phone:+49-211-6546-0
RicohElectronicDevicesKoreaCo.,Ltd.
3F,HaesungBldg,504,Teheran-ro,Gangnam-gu,Seoul,135-725,Korea
Phone:+82-2-2135-5700Fax:+82-2-2051-5713
RicohElectronicDevicesShanghaiCo.,Ltd.
Room403,No.2Building,No.690BiboRoad,PuDongNewDistrict,Shanghai201203,
People'sRepublicofChina
Phone:+86-21-5027-3200Fax:+86-21-5027-3299
RicohElectronicDevicesShanghaiCo.,Ltd.
ShenzhenBranch
1205,BlockD(JinlongBuilding),Kingkey100,HongbaoRoad,LuohuDistrict,
Shenzhen,China
Phone:+86-755-8348-7600Ext225
RicohElectronicDevicesCo.,Ltd.
Taipeioffice
Room109,10F-1,No.51,HengyangRd.,TaipeiCity,Taiwan(R.O.C.)
Phone:+886-2-2313-1621/1622Fax:+886-2-2313-1623
1.The products and the product specifications described in this document are subject to change or discontinuation of
productionwithoutnotice for reasons
suchasimprovement. Therefore, before deciding tousethe products, please
refertoRicohsalesrepresentativesforthelatestinformationthereon.
2.The materials in this document maynotbecopiedor otherwise reproduced in whole or in part withoutpriorwritten
consentofRicoh.
3.Please be sure to take any necessary formalities under relevant laws or regulations before exporting or otherwise
takingoutofyourcountrytheproductsorthetechnicalinformationdescribedherein.
4.Thetechnicalinformationdescribedinthisdocumentshowstypicalcharacteristicsofandexampleapplicationcircuits
fortheproducts.Thereleaseofsuchinformationisnottobeconstruedasawarrantyoforagrantoflicenseunder
Ricoh'soranythirdparty'sintellectualpropertyrightsoranyotherrights.
5.Theproductslistedinthisdocumentareintendedanddesignedforuseasgeneralelectroniccomponentsinstandard
applications (office equipment, telecommunication equipment, measuring instruments, consumer electronic products,
amusementequipmentetc.).Thosecustomersintendingtouseaproductinanapplicationrequiringextremequality
andreliability,forexample,inahighlyspecificapplicationwherethefailureormisoperationoftheproductcouldresult
inhumaninjuryordeath(aircraft,spacevehicle,nuclearreactorcontrolsystem,trafficcontrolsystem,automotiveand
transportationequipment,combustionequipment,safetydevices,lifesupportsystemetc.)shouldfirstcontactus.
6.Wearemakingourcontinuousefforttoimprovethequalityandreliabilityofourproducts,butsemiconductorproducts
arelikelytofailwithcertainprobability.Inordertopreventanyinjurytopersonsordamagestopropertyresultingfrom
suchfailure,customersshouldbecarefulenoughtoincorporatesafetymeasuresintheirdesign,suchasredundancy
feature,firecontainmentfeatureandfail-safefeature.Wedonotassumeanyliability
orresponsibilityforanylossor
damagearisingfrommisuseorinappropriateuseoftheproducts.
7.Anti-radiationdesignisnotimplementedintheproductsdescribedinthisdocument.
8.The X-ray exposure can influence functions and characteristics of the products. Confirm the product functions and
characteristicsintheevaluationstage.
9.WLCSP products should be used in light shielded environments. The light exposure can influence functions and
characteristicsoftheproductsunderoperationorstorage.
10.There can be variation in the marking when different AOI (Automated Optical Inspection) equipment is used. In the
caseofrecognizingthemarkingcharacteristicwithAOI,pleasecontactRicohsalesorourdistributorbeforeattempting
touseAOI.
11.
PleasecontactRicohsalesrepresentativesshouldyouhaveanyquestionsorcommentsconcerningtheproductsor
thetechnicalinformation.