IRLML2402PbF l l l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching Lead-Free RoHS Compliant, Halogen-Free HEXFET(R) Power MOSFET G 1 VDSS = 20V 3 D S 2 RDS(on) = 0.25 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. Base Part Number Package Type IRLML2402TRPbF Micro3TM (SOT-23) Micro3TM Standard Pack Form Quantity Tape and Reel 3000 Orderable Part Number IRLML2402TRPbF Absolute Maximum Ratings Parameter I D @ TA = 25C I D @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Max. Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range Units 1.2 0.95 7.4 540 4.3 12 5.0 -55 to + 150 A mW mW/C V V/ns C Thermal Resistance Parameter RJA 1 Maximum Junction-to-Ambient www.irf.com (c) 2014 International Rectifier Typ. Submit Datasheet Feedback Max. 230 Units C/W April 24, 2014 IRLML2402PbF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) g fs Gate Threshold Voltage Forward Transconductance IDSS Drain-to-Source Leakage Current V(BR)DSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 20 0.70 1.3 Typ. 0.024 2.6 0.41 1.1 2.5 9.5 9.7 4.8 110 51 25 Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.25 VGS = 4.5V, ID = 0.93A 0.35 VGS = 2.7V, ID = 0.47A V VDS = VGS, ID = 250A S VDS = 10V, ID = 0.47A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 3.9 ID = 0.93A 0.62 nC VDS = 16V 1.7 VGS = 4.5V, See Fig. 6 and 9 VDD = 10V ID = 0.93A ns RG = 6.2 RD = 11, See Fig. 10 VGS = 0V pF VDS = 15V = 1.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics IS I SM VSD t rr Q rr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units 0.54 7.4 25 16 1.2 38 24 A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 0.93A, VGS = 0V TJ = 25C, IF = 0.93A di/dt = 100A/s D G S Notes: Repetitive rating; pulse width limited by Pulse width 300s; duty cycle 2%. ISD 0.93A, di/dt 90A/s, VDD V(BR)DSS, Surface mounted on FR-4 board, t 5sec. max. junction temperature. ( See fig. 11 ) TJ 150C 2 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2402PbF 100 100 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V 10 1 0.1 1.5V 20s PULSE WIDTH TJ = 25C A 0.01 0.1 1 10 1 1.5V 0.1 R DS(on) , Drain-to-Source On Resistance (Normalized) 2.0 I D , Drain-to-Source Current (A) TJ = 25C TJ = 150C 1 0.1 V DS = 10V 20s PULSE WIDTH 2.5 3.0 3.5 A 4.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 10 Fig 2. Typical Output Characteristics 10 2.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.01 20s PULSE WIDTH TJ = 150C A 0.01 0.1 10 VDS , Drain-to-Source Voltage (V) 1.5 VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP I , Drain-to-Source Current (A) D I , Drain-to-Source Current (A) D TOP www.irf.com (c) 2014 International Rectifier I D = 0.93A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 4.5V 0 20 40 60 TJ , Junction Temperature (C) Fig 4. Normalized On-Resistance Vs. Temperature Submit Datasheet Feedback A 80 100 120 140 160 April 24, 2014 IRLML2402PbF 200 V GS, Gate-to-Source Voltage (V) 160 C, Capacitance (pF) 10 V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd Ciss 120 Coss 80 Crss 40 0 1 10 100 I D = 0.93A VDS = 16V 8 6 4 2 0 0.0 A 1.0 2.0 3.0 A 4.0 Q G , Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 10 100 OPERATION IN THIS AREA LIMITED BY R DS(on) TJ = 150C I D , Drain Current (A) ISD , Reverse Drain Current (A) FOR TEST CIRCUIT SEE FIGURE 9 1 TJ = 25C 0.1 VGS = 0V 0.01 0.2 0.4 0.6 0.8 1.0 1.2 A 1.4 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 www.irf.com (c) 2014 International Rectifier 10 100s 1 1ms TA = 25C TJ = 150C Single Pulse 0.1 1 10ms A 10 100 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area Submit Datasheet Feedback April 24, 2014 IRLML2402PbF V DS QG 4.5V QGS VGS QGD D.U.T. RG VG RD + - VDD 4.5V Pulse Width 1 s Duty Factor 0.1 % Charge Fig 9a. Basic Gate Charge Waveform Fig 10a. Switching Time Test Circuit Current Regulator Same Type as D.U.T. VDS 50K 90% .2F 12V .3F D.U.T. + V - DS 10% VGS VGS 3mA tr td(on) IG t d(off) tf ID Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 10b. Switching Time Waveforms Thermal Response (Z thJA ) 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 PDM 0.01 1 0.1 0.00001 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2402PbF Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + - - + RG * * * * Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Period D= - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 12. For N-Channel HEXFETS 6 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2402PbF Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) S Y M B O L 6 5 D 3 6 1 ccc 2 B e A A1 A2 b c E E1 DIME NSIONS MILLIME T ERS MAX MIN 1.12 0.89 0.10 0.01 1.02 0.88 0.50 0.30 0.20 0.08 3.04 2.80 2.64 2.10 1.40 1.20 0.95 BSC 1.90 BSC 0.40 0.60 0.25 BS C 0 8 0.10 0.20 0.15 C B A D E E1 e 5 e1 L L1 0 aaa e1 bbb ccc 4 INCHES MIN MAX .036 .044 .0004 .0039 .035 .040 .0196 .0119 .0078 .0032 .119 .111 .103 .083 .048 .055 .0375 BSC .075 BSC .0158 .0236 .0118 BSC 0 8 .004 .008 .006 H A A2 L1 3X b A1 bbb aaa C C A B 3 S URF 0 7 3X L RECOMMENDED FOOT PRINT NOT ES 1. DIMENS IONING AND T OLERANCING PER ASME Y14.5M-1994. 0.972 3X [.038] 2. DIMENS IONS ARE S HOWN IN MILLIMETERS AND INCHES . 2.742 [.1079] 3. CONT ROLLING DIMENS ION: MILLIMET ER. 4 DATUM PLANE H IS LOCATED AT T HE MOLD PART ING LINE. 5 DATUM A AND B T O B E DET ERMINED AT DAT UM PLANE H. 6 DIMENS IONS D AND E1 ARE MEAS URED AT DAT UM PLANE H. 7 DIMENS ION L IS T HE LEAD LENGTH FOR S OLDERING T O A S UBS T RATE. 8. OUT LINE CONFORMS TO JEDEC OUT LINE T O-236AB. 0.95 [.0375] 0.802 3X [.031] 1.90 [.075] Micro3 (SOT-23 / TO-236AB) Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 DATE CODE PART NUMBER Cu WIRE HALOGEN FREE LEAD-FREE ASSEMBLY LOT CODE X = PART NUMBER CODE REFERENCE : A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML5103 E = IRLML6402 F = IRLML6401 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML0100 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML9301 R = IRLML9303 S = IRLML6244 T = IRLML6246 U = IRLML6344 V = IRLML6346 W = IRFML8244 W = (1-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WORK YEAR Y W WEEK 1 01 A 2011 2001 2012 2002 2 02 B 3 03 C 2013 2003 2014 2004 4 04 D 5 2015 2005 6 2016 2006 2017 2007 7 8 2018 2008 2019 2009 9 0 24 X 2020 2010 25 Y 26 Z X = IRLML2244 Y = IRLML2246 Z = IRFML9244 DATE CODE EXAMPLE: YWW = 432 = DF YWW = 503 = 5C W = (27-52) IF PRECEDED BY A LETTER YEAR 2011 2012 2013 2014 2015 2016 2017 2018 2019 2020 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 Y A B C D E F G H J K WORK WEEK W 27 28 29 30 A B C D 50 51 52 X Y Z Note: For the most current drawing please refer to IR website at http://www.irf.com/package 7 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2402PbF Micro3TM Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 ( .080 ) 1.95 ( .077 ) 1.6 ( .062 ) 1.5 ( .060 ) 4.1 ( .161 ) 3.9 ( .154 ) TR FEED DIRECTION 1.85 ( .072 ) 1.65 ( .065 ) 3.55 ( .139 ) 3.45 ( .136 ) 4.1 ( .161 ) 3.9 ( .154 ) 1.32 ( .051 ) 1.12 ( .045 ) 8.3 ( .326 ) 7.9 ( .312 ) 0.35 ( .013 ) 0.25 ( .010 ) 1.1 ( .043 ) 0.9 ( .036 ) 178.00 ( 7.008 ) MAX. 9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package 8 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014 IRLML2402PbF Qualification information Consumer Qualification level (per JEDE C JE S D47F Moisture Sensitivity Level Micro3TM (SOT-23) RoHS compliant guidelines) MS L1 (per JEDE C J-S T D-020D ) Yes Qualification standards can be found at International Rectifier's web site: http://www.irf.com/product-info/reliability Applicable version of JEDEC standard at the time of product release Revision History Date Comment 4/24/2014 * Updated data sheet with new IR corporate template. * Updated package outline & part marking on page 7. * Added Qualification table -Qual level "Consumer" on page 9. * Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com (c) 2014 International Rectifier Submit Datasheet Feedback April 24, 2014