TZX-Series www.vishay.com Vishay Semiconductors Small Signal Zener Diodes FEATURES * Very sharp reverse characteristic * Low reverse current level * Very high stability * Low noise * AEC-Q101 qualified * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS * Voltage stabilization DESIGN SUPPORT TOOLS AVAILABLE 3D 3D 3D Models PRIMARY CHARACTERISTICS PARAMETER VALUE UNIT VZ range nom. 2.4 to 36 V Test current IZT 2; 5 mA VZ specification Pulse current Circuit configuration Single ORDERING INFORMATION DEVICE NAME ORDERING CODE TAPED UNITS PER REEL MINIMUM ORDER QUANTITY TZX-series TZX-series-TAP 10 000 per ammopack (52 mm tape) 30 000/box TZX-series TZX-series-TR 10 000 per 14" reel (52 mm tape) 30 000/box PACKAGE PACKAGE NAME WEIGHT MOLDING COMPOUND FLAMMABILITY RATING MOISTURE SENSITIVITY LEVEL SOLDERING CONDITIONS DO-35 (DO-204AH) 125 mg UL 94 V-0 MSL level 1 (according J-STD-020) Peak temperature max. 260 C ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER Power dissipation TEST CONDITION SYMBOL VALUE UNIT l = 4 mm, TL = 25 C Ptot 500 mW IZ Ptot/VZ mA RthJA 300 K/W Zener current Thermal resistance junction to ambient air l = 4 mm, TL =constant Junction temperature Storage temperature range Forward voltage (max.) IF = 200 mA Tj 175 C Tstg -65 to +175 C VF 1.5 V Rev. 2.6, 11-Mar-2019 Document Number: 85614 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZX-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) ZENER VOLTAGE RANGE TEST CURRENT VZ at IZT1 IZT1 V mA PART NUMBER DYNAMIC RESISTANCE REVERSE LEAKAGE CURRENT IR at VR (1) IR at VR A V MAX. A ZZ at IZT1 V MAX. MIN. MAX. MAX. TZX2V4A 2.3 2.5 5 5 0.5 50 1 TZX2V4B 2.4 2.6 5 5 0.5 50 1 100 TZX2V7A 2.5 2.7 5 5 0.5 10 1 100 100 TZX2V7B 2.6 2.8 5 5 0.5 10 1 100 TZX2V7C 2.7 2.9 5 5 0.5 10 1 100 TZX3V0A 2.8 3 5 5 0.5 6 1 100 TZX3V0B 2.9 3.1 5 5 0.5 6 1 100 TZX3V0C 3 3.2 5 5 0.5 6 1 100 TZX3V3A 3.1 3.3 5 5 1 2 1 100 TZX3V3B 3.2 3.4 5 5 1 2 1 100 TZX3V3C 3.3 3.5 5 5 1 2 1 100 TZX3V6A 3.4 3.6 5 5 1 2 1 100 TZX3V6B 3.5 3.7 5 5 1 2 1 100 TZX3V6C 3.6 3.8 5 5 1 2 1 100 TZX3V9A 3.7 3.9 5 5 1 2 1 100 TZX3V9B 3.8 4 5 5 1 2 1 100 TZX3V9C 3.9 4.1 5 5 1 2 1 100 TZX4V3A 4 4.2 5 5 1.5 1 1 100 TZX4V3B 4.1 4.3 5 5 1.5 1 1 100 TZX4V3C 4.2 4.4 5 5 1.5 1 1 100 TZX4V3D 4.3 4.5 5 5 1.5 1 1 100 TZX4V7A 4.4 4.6 5 5 2 6 2 100 TZX4V7B 4.5 4.7 5 5 2 5 2 100 TZX4V7C 4.6 4.8 5 5 2 4 2 100 TZX4V7D 4.7 4.9 5 5 2 3 2 100 TZX5V1A 4.8 5 5 5 2 2 2 100 TZX5V1B 4.9 5.1 5 5 2 2 2 100 TZX5V1C 5 5.2 5 5 2 2 2 100 TZX5V1D 5.1 5.3 5 5 2 2 2 100 TZX5V6A 5.2 5.5 5 5 2 1 2 40 TZX5V6B 5.3 5.6 5 5 2 1 2 40 TZX5V6C 5.4 5.7 5 5 2 1 2 40 TZX5V6D 5.5 5.8 5 5 2 1 2 40 TZX5V6E 5.6 5.9 5 5 2 1 2 40 TZX6V2A 5.7 6 5 1 3 3 4 15 TZX6V2B 5.8 6.1 5 1 3 3 4 15 TZX6V2C 6 6.3 5 1 3 3 4 15 TZX6V2D 6.1 6.4 5 1 3 3 4 15 TZX6V2E 6.3 6.6 5 1 3 3 4 15 TZX6V8A 6.4 6.7 5 1 3.5 2 4 15 TZX6V8B 6.6 6.9 5 1 3.5 2 4 15 TZX6V8C 6.7 7 5 1 3.5 2 4 15 TZX6V8D 6.9 7.2 5 1 3.5 2 4 15 Rev. 2.6, 11-Mar-2019 Document Number: 85614 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZX-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) ZENER VOLTAGE RANGE TEST CURRENT VZ at IZT1 IZT1 V mA PART NUMBER MIN. MAX. DYNAMIC RESISTANCE REVERSE LEAKAGE CURRENT IR at VR (1) IR at VR A V MAX. A ZZ at IZT1 V MAX. MAX. TZX7V5A 7 7.3 5 1 5 30 6.65 15 TZX7V5B 7.2 7.6 5 1 5 30 6.84 15 TZX7V5C 7.3 7.7 5 1 5 30 6.94 15 TZX7V5D 7.5 7.9 5 1 5 30 7.13 15 TZX7V5X 7.07 7.45 5 1 5 30 6.72 15 TZX8V2A 7.7 8.1 5 1 6.2 0.1 7.32 20 20 TZX8V2B 7.9 8.3 5 1 6.2 0.1 7.5 TZX8V2C 8.1 8.5 5 1 6.2 0.1 7.7 20 TZX8V2D 8.3 8.7 5 1 6.2 0.1 7.98 20 TZX9V1A 8.5 8.9 5 1 6.8 0.04 8.08 20 TZX9V1B 8.7 9.1 5 1 6.8 0.04 8.27 20 TZX9V1C 8.9 9.3 5 1 6.8 0.04 8.46 20 TZX9V1D 9.1 9.5 5 1 6.8 0.04 8.65 20 TZX9V1E 9.3 9.7 5 1 6.8 0.04 8.84 20 TZX10A 9.5 9.9 5 1 7.5 0.04 9.03 25 TZX10B 9.7 10.1 5 1 7.5 0.04 9.22 25 TZX10C 9.9 10.3 5 1 7.5 0.04 9.41 25 TZX10D 10.2 10.6 5 1 7.5 0.04 9.69 25 TZX11A 10.4 10.8 5 1 8.2 0.04 9.88 25 TZX11B 10.7 11.1 5 1 8.2 0.04 10.2 25 TZX11C 10.9 11.3 5 1 8.2 0.04 10.4 25 TZX11D 11.1 11.6 5 1 8.2 0.04 10.5 25 TZX12A 11.4 11.9 5 1 9.5 0.04 10.8 35 TZX12B 11.6 12.1 5 1 9.5 0.04 11 35 TZX12C 11.9 12.4 5 1 9.5 0.04 11.3 35 TZX12D 12.2 12.7 5 1 9.5 0.04 11.6 35 TZX12X 11.44 12.03 5 1 9.5 0.04 10.9 35 35 TZX13A 12.4 12.9 5 1 10 0.04 11.8 TZX13B 12.6 13.1 5 1 10 0.04 12 35 TZX13C 12.9 13.4 5 1 10 0.04 12.3 35 TZX14A 13.2 13.7 5 1 11 0.04 12.5 35 TZX14B 13.5 14 5 1 11 0.04 12.8 35 TZX14C 13.8 14.3 5 1 11 0.04 13.1 35 TZX15A 14.1 14.7 5 1 11.5 0.04 13.4 40 TZX15B 14.5 15.1 5 1 11.5 0.04 13.8 40 TZX15C 14.9 15.5 5 1 11.5 0.04 14.2 40 TZX15X 14.35 15.09 5 1 11.5 0.04 13.6 40 TZX16A 15.3 15.9 5 1 12 0.04 14.5 45 TZX16B 15.7 16.5 5 1 12 0.04 14.9 45 TZX16C 16.3 17.1 5 1 12 0.04 15.5 45 TZX18A 16.9 17.7 5 1 13 0.04 16.1 55 TZX18B 17.5 18.3 5 1 13 0.04 16.6 55 TZX18C 18.1 19 5 1 13 0.04 17.2 55 TZX20A 18.8 19.7 2 1 15 0.04 17.9 60 TZX20B 19.5 20.4 2 1 15 0.04 18.5 60 TZX20C 20.2 21.2 2 1 15 0.04 19.2 60 TZX22A 20.9 21.9 2 1 17 0.04 19.9 65 Rev. 2.6, 11-Mar-2019 Document Number: 85614 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZX-Series www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) ZENER VOLTAGE RANGE TEST CURRENT VZ at IZT1 IZT1 V mA PART NUMBER DYNAMIC RESISTANCE REVERSE LEAKAGE CURRENT IR at VR (1) IR at VR A V A MAX. ZZ at IZT1 V MIN. MAX. MAX. MAX. TZX22B 21.6 22.6 2 1 17 0.04 20.5 TZX22C 22.3 23.3 2 1 17 0.04 21.2 65 TZX24A 22.9 24 2 1 19 0.04 21.8 70 TZX24B 23.6 24.7 2 1 19 0.04 22.4 70 TZX24C 24.3 25.5 2 1 19 0.04 23.1 70 TZX24X 22.61 23.77 2 1 19 0.04 21.5 70 TZX27A 25.2 26.6 2 1 21 0.04 23.9 80 TZX27B 26.2 27.6 2 1 21 0.04 24.9 80 80 65 TZX27C 27.2 28.6 2 1 21 0.04 25.8 TZX27X 26.99 28.39 2 1 21 0.04 25.6 80 TZX30A 28.2 29.6 2 1 23 0.04 26.8 100 TZX30B 29.2 30.6 2 1 23 0.04 27.7 100 TZX30C 30.2 31.6 2 1 23 0.04 28.7 100 TZX30X 29.02 30.51 2 1 23 0.04 27.6 100 TZX33A 31.2 32.6 2 1 25 0.04 29.6 120 TZX33B 32.2 33.6 2 1 25 0.04 30.6 120 TZX33C 33.2 34.5 2 1 25 0.04 31.5 120 TZX36A 34.2 35.7 2 1 27 0.04 32.5 140 TZX36B 35.3 36.8 2 1 27 0.04 33.5 140 TZX36C 36.4 38 2 1 27 0.04 34.6 140 TZX36X 35.36 37.19 2 1 27 0.04 33.6 140 Notes * Additional measurement of voltage group TZM9V1 to TZX36, IR at 95 % VZmin. 40 nA at Tj = 25 C (1) Additional measurement 500 Ptot - Total Power Dissipation (mW) RthJA - Therm. Resist. Junction Ambient (K/W) BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 400 300 l l 200 100 TL = constant 0 0 15 20 I - Lead Length (mm) 95 9611 5 10 Fig. 1 - Thermal Resistance vs. Lead Length 600 500 400 300 200 100 0 0 95 9602 80 120 160 200 40 Tamb - Ambient Temperature (C) Fig. 2 - Total Power Dissipation vs. Ambient Temperature Rev. 2.6, 11-Mar-2019 Document Number: 85614 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZX-Series www.vishay.com Vishay Semiconductors 200 CD - Diode Capacitance (pF) VZ - Voltage Change (mV) 1000 100 IZ = 5 mA 10 VR = 2 V Tj = 25 C 100 50 0 1 0 5 10 15 20 25 VZ - Z-Voltage (V) 95 9598 0 10 5 15 20 25 VZ - Z-Voltage (V) 95 9601 Fig. 6 - Diode Capacitance vs. Z-Voltage Fig. 3 - Typical Change of Working Voltage under Operating Conditions at Tamb = 25 C 1.3 100 VZtn = VZt/VZ (25 C) 1.2 TKVZ = 10 x 10-4/K 8 x 10-4/K 6 x 10-4/K 1.1 4 x 10-4/K 2 x 10-4/K 0 1.0 - 2 x 10-4/K - 4 x 10-4/K 0.9 IF - Forward Current (mA) VZtn - Relative Voltage Change 150 10 Tj = 25 C 1 0.1 0.01 0.001 0.8 - 60 0 60 120 180 Tj - Junction Temperature (C) 95 9599 0 240 Fig. 4 - Typical Change of Working Voltage vs. Junction Temperature 0.2 0.4 0.6 0.8 1.0 VF - Forward Voltage (V) 959605 Fig. 7 - Forward Current vs. Forward Voltage 100 80 IZ - Z-Current (mA) TKVZ - Temperature Coefficient of VZ (10-4/K) 15 10 5 IZ = 5 mA Ptot = 500 mW Tamb = 25 C 60 40 20 0 0 -5 0 0 95 9600 10 20 30 40 50 95 9604 4 6 8 12 20 VZ - Z-Voltage (V) VZ - Z-Voltage (V) Fig. 8 - Z-Current vs. Z-Voltage Fig. 5 - Temperature Coefficient of Vz vs. Z-Voltage Rev. 2.6, 11-Mar-2019 Document Number: 85614 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TZX-Series www.vishay.com Vishay Semiconductors 50 Ptot = 500 mW Tamb = 25 C 40 IZ - Z-Current (mA) rZ - Differential Z-Resistance () 1000 30 20 10 IZ = 1 mA 100 5 mA 10 10 mA Tj = 25 C 1 0 15 20 25 30 35 0 VZ - Z-Voltage (V) 95 9607 Zthp - Thermal Resistance for Pulse Cond. (K/W) Fig. 9 - Z-Current vs. Z-Voltage 5 10 15 25 20 VZ - Z-Voltage (V) 95 9606 Fig. 10 - Differential Z-Resistance vs. Z-Voltage 1000 tp/T = 0.5 100 tp/T = 0.2 Single Pulse RthJA = 300 K/W T = Tj max. - Tamb 10 tp/T = 0.01 tp/T = 0.1 tp/T = 0.02 tp/T = 0.05 1 10-1 iZM = (- VZ + (VZ2 + 4rzj x T/Zthp) 1/2)/(2rzj) 100 101 102 95 9603 tp - Pulse Length (ms) Fig. 11 - Thermal Response PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH) 3.9 max. [0.154] 3.1 min. [0.120] 26 min. [1.024] 1.3 [0.050] 26 min. [1.024] 1.7 [0.067] O 0.4 min. [0.015] O 0.6 max. [0.024] Cathode Identification Rev. 6 - Date: 19. December 2011 Document no.: SB-V-3906.04-031(4) 94 9366 Rev. 2.6, 11-Mar-2019 Document Number: 85614 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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