MAXIMUM RATINGS: (TC=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 90 V
Collector-Emitter Voltage VCEV 90 V
Collector-Emitter Voltage VCER 60 V
Collector-Emitter Voltage VCEO 55 V
Emitter-Base Voltage VEBO 7.0 V
Continuous Collector Current IC 4.0 A
Continuous Base Current IB 2.0 A
Power Dissipation (2N3054) PD 25 W
Power Dissipation (2N3054A) PD 75 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance (2N3054) JC 7.0 °C/W
Thermal Resistance (2N3054A) JC 2.33 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEV V
CE=90V, VEB=1.5V 1.0 mA
ICEV V
CE=90V, VEB=1.5V, TC=150°C 6.0 mA
ICEO V
CE=30V 500 μA
IEBO V
EB=7.0V 1.0 mA
BVCEO I
C=100mA 55 V
BVCER I
C=100mA, RBE=100Ω 60 V
VCE(SAT) I
C=500mA, IB=50mA 1.0 V
VCE(SAT) I
C=3.0A, IB=1.0A 6.0 V
VBE(ON) V
CE=4.0V, IC=500mA 1.7 V
hFE V
CE=4.0V, IC=0.5A 25 150
hFE V
CE=4.0V, IC=3.0A 5.0
hfe V
CE=4.0V, IC=100mA, f=1.0kHz 25 180
fT V
CE=10V, IC=200mA, f=1.0MHz 3.0 MHz
fhfe V
CE=4.0V, IC=100mA 30 kHz
2N3054
2N3054A
NPN SILICON
POWER TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3054, 2N3054A
types are NPN silicon power transistors manufactured
by the epitaxial base process, mounted in a hermetically
sealed metal case, designed for general purpose
amplifier and switching applications.
MARKING: FULL PART NUMBER
TO-66 CASE
R1 (11-June 2012)
www.centralsemi.com
2N3054
2N3054A
NPN SILICON
POWER TRANSISTOR
TO-66 CASE - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
www.centralsemi.com
R1 (11-June 2012)
