Numerical Index 2N3582-~-2N3673 zie MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS =i = = 5 | se | REPLACE | PAGE Po |B] Ts | Vos | Vee |= fre @ Ic Voasan @| Bl 4 iB TRE 7/3! ment | numer | USE 5 ef SEAN Sol |B] Tel z\a @ 25C |B] C | (volts) | (volts) |S | (min) (max) >] (volts) 5 3 5/!3 2N3582 S| P VID 0.4m) A | 200 50 40 | 0 | 100 | 300 0.1M 0.5 5.0M 100 | E 30M | T 2N3583 S}|N |MI2251 7-200] HPA 350m, C | 200 250 175 | 0 40 | 200 O.5A 5.0 1.0A 25/E 10M |] T 2N3584 |S|N PMS 35WmC | 200 | 330] 250/0]8.0]; 140] 1.0A] 0.75] 1.04 10M | T 2N3585 |S] N } 2N3767 7-142 | PMS 35w | 200 | 440 | 30010]8.0] 140] 1,0A] 0.75} 1.04 10M | T 2N3586 ce CHP 125M A | 200 45 45 ]0 O.1M{T 2N3587 S|N DFA 0.5W) A | 200 60 4510 80 | 500 1.0M 1.0 10M 80M | T 2N3588 | G{P RFC O.IW A] 85 25 20 1.0M 200M | T 2N3589 S|N HPA 2,.0W) A | 175 200 200 |R 30 90 0.2A 2.0 0.24 30 ,E 15M |T 2N3590 |S|WN HPA 2.CW) A | 175} 200 | 200]R] 75] 150] 0.2A 2.0} 0.24 75 }E 15M | T 2N3591 |S] N HPA L.cw A |175] 200 | 200/R | 30] 90] 0.24 2.0] 0.24 30 | E 15M |T 2N3592 S|N HPA 1.0W) A | 175 200 200 {R 75 } 150 0,2A 2.0 0.24 7S [E 15M | T 2N3593 S|N HPA 1.CWl A 1175 200 200 |R 30 90 O.2A 2.0 Q.24 30 1 E 15M | T 2N3594 |S|{N HPA L.cCWhA {175} 200 | 200]R | 75] 150] 0.2A 2.0] 0.24 7S)E 15M | T 2N3595 | S| N HPA 1.5WA]175} 200 | 200/R} 30] 90] 0.24 2.0] 0.2A 30 |E 15M] T 2N3596 | S/N HPA 1.5W)A ]175 | 200 | 200]R | 7542150] 0.24 2.0} 0.24 75 |E 15M] T 2N3597 | S| N | 2N3767 7-142 | PHS 100W] | 200 60 401;0] 40] 120 10A 0.5 LOA 75 1E 30M | T 2N3598 | S| N j 2N3446 7-111) PHS LoOW Gc | 200 80 60 }0 | 40 | 120 10A 0.5 10A 75 )z 30M ) T 2N3599 | S| N | 2N3447 7-111] PHS 100W} C | 200 | 100 80 |0]{ 40} 120 10A 0.5 10A 75,5 30M | T 2N3600 S|N RFA 0. 2wW) A | 200 30 15 | 0 20 | 150 3.0M 40/5 850M | T 2N3601 G]P PMS | 0.286W] C | 100 100 40] 0 60 | 180 1.0A 0.2 O.1A 50 ]}E 20M | T 2N3602 G|P PMS | 0.286W] C | 100 100 40 | 0 60 | 180 1,0A 0.2 0.14 50 ]E 20M | T 2N3603 | G|P PMS | 0.286W/ C | 100 | 130 55 [0] 60]180}] 1.04 0.2] O.1A 50 [E 20M | T 2N3604 | GIP PMS | 0.286WiC {100 ] 130 55 |0] 60/180] 1.0A 0.2] O.1A 50 |E 20M | T 2N3605 S| N | MPS3646 5-95 MSC O.2W) A { 150 18 14 {0 30 10M 0.25 10M 300M | T 2N3605A |S | N MSS 320M A | 120 40 15 | 0 30 | 120 10M 0.25 10M 300M | T 2N3606 {S| N | MPS3646 | 5-95 | MSC 0.2W) A | 150 18 14]0} 30 10M | 0.25 10M 300M | T 2N3606A |S [| N MSS 320M A | 120 40 15 [0 30 | 120 10M 0.25 10M 300M | T oe S| N | MPS3646 5-95 MSC 0.2W) A | 150 18 14/90 30 10M 0.25 10M 300M | T 2N3608 an Field Effect Transistors, see Table on Page 1-166 2N3611 G|P 7-118] LPA 85w] Cc | 110 40 30 |S 35 70 3.0A 0.25 3.0A 40 [E 0.3M{/T 2N3612 G)P 7-118) LPA 85W) Cc ) 110 60 45])8 35 70 3.0A 0.25 3.0A 40 )E 0.3M]T 2N3613 G{P 7-118] LPA 85wic | 110 40 30 |S 60 | 120 3.0A 0.25 3.0A 60 | E 0.3M/T 2N3614 |G] P 7-118} LPA 85 C | 110 60 45|/S | 60]120] 3.0A] 0.25] 3.0A 60)E }] 0.3M|T 2N3615 GIP 7-121] LPA 85) C | 110 80 60 |S 30 60 3.0A 0.25 3.0A 40 |E 0.3M{T 2N3616 |G|P 7-121] LPA 85w) Cc | 110 | 100 75 |S} 30] 60] 3.0A] 0,25] 3.0A 40}E | 0.3M|T 2N3617 | G\P 7-121) LEA 854) C } 110 80 60}S |] 45] 90) 3.0A] 0.25] 3.04 60 ]}E |] 0.3M}T 2N3618 |G|P 7-121) LPA 851 C | 110] 100 75/S | 45] 904) 3.0A ] 0.25] 3.04 60 ]E |] 0.3M|T 2N3619 | S{N HPA 7.50) C | 175 75 40,;90] 40 1,0A | 0.75] 1.0A 200M | T 2N3620 | S|N HPA 7.501 C [175 75 40}; a] 40 1.0A 1.0] 3.0A 200M | T 2N3621 | S/N HPA 30") C | 175 75 40]|0] 40 1.0A | 1.25] 5.0A 200M | T 2N3622 |S|N HPA 30W| C | 175 75 40104 40 1.0A 4 1.25) 5.04 200M | T 2N3623 | S|N HPA 7.54) C | 175 75 40 ]0} 40 1.0A | 0.75] 1.0A 200M | T 2N3624 | S|N HPA 7.5 C 1175 75 40/90] 40 1.0A 1.0] 3.04 200M | T 2N3625 | S|N HPA 30W} Cc | 175 75 40} 0] 40 1.0A | 1.25] 5.0A 200M | T 2N3626 S|N HPA 30W] C | 175 75 40]0 40 1.0A 1.25 5.0A 200M | T 2N3627 | S|N HPA 7.5W)C 4175} 100 50 | 0] 40 1L.0A | 0.75] 1.04 200M | T 2N3628 S|N HPA 7.5W)C [175 100 5010 40 1L.0A 1.0 3.0A 200M | T 2N3629 | S|N HPA 30W) Cc | 175 | 100 50 }0] 40 1.0A 7 1.25] 5.0A 200M | T 2N3630 Sj N HPA 30W} C | 175 100 50 |} 0 40 1.0A 1.25 5.0A 200M | T 2N3631 Field Effect Transistors, see Ta>le on Page 1-166 2N3632 |S|N 9-74 | HPA 23w| C | 200 65 40 |O | 10} 150 | 0.254 1.0] 1.0A 250M | T 2N3633 | S|N HNS 0.3W] A | 200 15 |] 6.0]0]} 50] 150 10M |] 0.21} 3.0M 1.3G|T 2N3634 | S| P 8-249] VID 1.0W A | 200] 140 | 140],0] 50] 150 50M 40]/E |] 150M] T 2N3635 | S| P 8-249) VID 1.0W A | 200 | 140 | 140] 0 | 100 | 300 50M 80}E | 200M|T 2N3636 | S| P 8-249} VID 1.0W) A {200 | 175 | 175]/0] 50] 150 50M 40 | E | 150M] T 2N3637 |S] P 8-249] VID 1.0W) A | 200] 175 | 175 | 0 | 100 | 300 50M 80]/E | 200M|T 2N3638 S| P HSs 0.3m A ) 125 25 25 )0 30 50M 0.25 50M 25)E 100M | T 2N3638A | S| P HSS O.3W) A | 125 25 25 ]0) 100 50M 0.25 50M LOOITE 150M; T 2N3639 | S| P| MPpS3639 | 5-90 | HSS 0.2 A $125) 6.0] 6.0/0] 30] 120 10M | 0.16 10M 500M | T 2N3640 | S| P| MPS3640{ 5-93 | HSS 0.20 A | 125 12 12} 0] 30] 120 10M 0.2 10M 500M | T 2N3641 [| S| N] MPS6530 | 5-118) HPA] 0.35 A | 125 60 30] 0] 40] 120]0.15A |] 0.22] 0.154 250M | T 2N3642 | S| N|MPS6530 | 5-118) HPA) 0.35) A | 125 60 45170] 40} 120) 0.15A | 0.22] 0.154 250M | T 2N3643 S| N |] MPS6531 5-118] HPA 0.35 A] 125 60 30 | 0 | 100 | 300 | 0,15A 0,22] 0.15A 250M | T 2N3644 S}P HSss O.3W A 7125 45 45} 0 ]115 | 300 50M 0.25 50M 200M | T 2N3645 S| P HSS O.3W A | 125 60 60 | 0 | 115 | 300 50M 0.25 50M 200M |] T 2N3646 S| N | MPS3645 5-95 HSS O.2W) A | 125 40 15 | 0 30 | 120 30M 0.2 30M 350M | T 2N3647 S| N 8-243 | HSS 0.4 A | 200 40 101, 0 25 | 150 | 0.154 0.25 10M 2045 350M | T 2N3548 SiN 8-243] HSS 0.4] A | 200 40 1570 30 | 120] 0.15A 0.25 10M 20]; E 450M | T 2N3649 thru Thyristors, see Table on Page 1-154 2N3658 2N3659 S|N VID 4.0] Cc | 200 220 170 {0 20 LOM 20) E 50M | T 2N3660 S| P HPA 5.0 C | 200 40 30}, 0 25 | 100 0.5A 1.2 0.5A 25M, T 2N3661 S| P HPA ow c | 200 60 50] 0 25 | 100 0.54 1.2 0.54 25M{T 2N3662 S|N RFC O.2W) A | 125 18 12) 0 20 8.0M 700M | T 2N3663 | S| N RFC 0,20) A | 125 30 12} 0] 20 8.0M 700M | T 2N3664 S| N 9-80 HPA 5.O0W) Cc | 200 60 60] S | 8.0 80 50M 0.75] 0.254 300M | T 2N3665 sj) N MNS 5.0) C } 260 120 807 0 40) 120] 0.15A 0.5) 0.154 60M | T 2N3666 S| N MNS 5.0W) C | 200 120 80 | 0 | 100 | 300 | 0.154 0.5] 0.154 60Mj T 2N3667 | S| N PMS LL7WeC | 200 50 50]/O}f 157 60] 8.0A 1.5] 8.04 O.5M] T 2N3668 thru Thyristors, see Table on Page 1-154 2N3670 2N3671 S| P HSS 0.6 A | 200 60 50] 0 75 | 225] 0.154 0.4] 0.154 200M | T 2N3672 Ss} P HSS 0.4W A | 200 60 50] 0 75 | 225} 0,154 0.4] 0.154 200M | T 2N3673 S| P HSS 0.35%) A | 200 60 50] 0 75 | 225 | 0.154 0.4] 0.154 200M | T 1-141 RF Transistors RF POWER TRANSISTORS (Listed in order of operating test frequency and power output) ALL SILICON NPN f Pout @ Pin Type MHz Ww Ww 2N3295 30 0.3 0.012 2N3296 30 3.0 0.075 2N3297 30 12 1.2 2N2948 30 15 2.0 2N2951, 52 50 0.6 O.1 2N2949, 50 50 3.5 0.35 2N2947 50 15 2.0 2N3950 50 50 4.5 2N3298 30 0.1 - 2N3375 100 7.5 1.0 2N3818 100 15 3.0 2N3553 175 2.5 0.25 2N3961 175 4.0 0.5 2N3924 175 4.0 1.0 2N3925 175 5.0 1.3 2N3926 175 7.0 2.0 2N3927 175 12 4.0 2N3632 175 13.5 3.5 2N3137 250 0.7 0.1 2N3664 250 2.2 0.4 2N3866 400 1.0 0.1 2N3948 400 1.0 90.25 2N4012 400 3.0 (typ) 1.0 2N3375 400 3. 0 (min) 1.0 2N3733 400 10 4.0 HIGH-VOLTAGE TRANSISTORS fp (MHz) @ Ic Type Vcro min max mA 2N4924 100 100 500 20 2N4925 150 100 500 20 2N4926 200 30 300 10 2N4927 250 30 300 10 9-7 BCWwWC WW. KL)[N XQ ,' $)p0D0) 'DYi MWiwyWV BWwiwyisXsiidd;i WM WW~ RF Transistors Ves =65V 2n3375 Ic = 1.0-3.0 A 2N3553 Pp = 7-23 W \\, 2N3632 \ *Collector connected to case * te eae 2N3961 Ae CASE 24 CASE 36 **Emitter connected to case , N3375 and stud 2N3553 2N3961 2N3632 ***Collector isolated from case and stud electrically NPN silicon RF Power transistors, optimized for large-signal power amplifier and driver applications to 400MHz, provide wide choice of power levels and guar- anteed safe operating areas. MAXIMUM RATINGS (Ta= 25C unless otherwise noted) Rating Symbol! 2N3375] 2N3553 | 2N3632 | 2N3961| Unit Collector-Base Voltage Vop 65 65 65 65 Vdc Emitter-Base Voltage VER 4 4 4 4 Vdc Collector-Emitter Voltage VoKo 40 40 40 40 Vde Collector Current Io 1.5 1.0 3.0 1.0 Adc Power Dissipation @ To = 25C Pp 11.6 7.0 23 10 Watts Derate above 25C 66.4 40 131 57.2 | mW/C Junction Temperature Ty |< 200 __-} c Storage Temperature Range T <a -65 to +200 -> c ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) [_ Characteristic [ Symbol | Min | Typ | Max | Unit | OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage* BYogo(sus)* Vde (lg = 200 mAdc, In 0) 2N3375, 2N3553, 2N3632 40 - - We = 400 mAdc, Ib = 0) 2N3961 40 - - Emitter-Base Breakdown Voltage BV BO Vde Cp = 0.25 mAdc, Ig = 0) 2N3632 4.0 - - (Ip = 0.1 mAdc, To = 0) 2N3375, 2N3553 4.0 - - (Ig = 1.0 mAde, I, = 0) 2N3961 4.0 - - Collector Cutoff Current loro mAdc Vor = 30 Vdc, IB = 0) 2N3375, 2N3553 - - 0.1 2N3632 - - 0.25 Collector Cutoff Current lorx mAdc Vor = 30 Vde, VBE (off) = 1.5 Vdc, To = 200C) 2N3375, 2N3553 - - 5.0 2N3632 - - 10 (V, = 65 Vde, V = 1.5 Vde) 2N3375, 2N3553 - - 1.0 cE BE (off) 23632 - - 5.0 Collector Cutoff Current Topo mAdc Vop = 28 Vdc, I =0, Ty = 150C) 2N3961 - - 5.0 (Vv = 65 Vde, I, = 0) 2N3632 - - 0.5 cB E 2N3961 - - 1.0 Emitter Cutoff Current TeBO mAdc Vor = 4.0 Vde, Ig = 0) 2N3375, 2N3553 - - 0.1 2N3632 - - 0.25 9-74 RF Transistors 2N3375, 2N3553, 2N3632, 2N3961 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol | Min Typ | Max Unit | ON CHARACTERISTICS DC Current Gain hoe - lg = 250 mAdc, Vor = 5.0 Vdc) 2N3375, 2N3553, 2N3632 10 - - lg = 1.0 Adc, Vor = 5.0 Vdc) 2N3632 5.0 - - Collector-Emitter Saturation Voltage Von(sat) Vde lg = 250 mAdc, Ip = 50 mAdc) 2N3553 - - 1.0 Mg = 500 mAdc, Ip = 100 mAdc) 2N3375, 2N3632 - - 1.0 Base-Emitter Saturation Voltage Vv Vac (Ig = 1.0 Ade, I, = 5-0 Ade) 2N3632 BE(sat) - - 1.5 DYNAMIC CHARACTERISTICS Current-GainBandwidth Product fp MHz (I, = 100 mAdc, V =28 Vdc, f = 100 MHz) 2N3553, 2N3961 - 500 - Cc CE , _ 500 _ I, = 150 mAdc, Vor = 28 Vdc, f = 100 MHz) 2N3375 - 500 - 2N3632 - 400 - Output Capacitance Cop pF (Vop = 28 Vie, I, = 0, = 100 kHz) 2N3961 - 8.0 10 Wop = 30 Vde, Ip =0, f = 100 kHz) 2N3375, 2N3553 - 8.0 10 2N3632 - 16 20 FUNCTIONAL TESTS 2N3375 Power Input Test Circuit Figure 7 in - - 1.0 Watt Common-Emitter Amplifier | cx ~ 28 Vde, Poy = 7-5 Watts, pe 8.75 - - i dB Power Gain = 100 MHz) Collector Efficiency 7 65 - - % Power Input Test Circuit Figure 8 in - - 1.0 Watt Common-Emitter Amplifier | (cx = 28 Vde, Poup = 3.0 Watts, be 4.77 dB Power Gain { = 400 MHz) Collector Efficiency q 40 - - % 2N3553 Power Input Test Circuit Figure 9 in - - 0.25 Watt Common-Emitter Amplifier Vor = 28 Vac, Pout = 2.5 Watts, Soe 10 - - dB Power Gain f = 175 MHz) Collector Efficiency n 50 - - % 2N3632 Power Input Test Circuit Figure 10 in - - 3.5 Watts Common-Emitter Amplifier | or = 28 Vde. Poy, = 15.5 Watts, Spe 5.86 - - 4B Power Gain { = 175 MHz) Collector Efficiency 7 70 - - % 2N3961 Power Input Test Circuit Figure 11 in - - 0.5 Watt Common-Emitter Amplifier | cg ~ 12-5 Vde, Poys = 2-0 Watts, Ga, 6.0 - - dB Power Gain Rg = 50 ohms, Ry = 50 ohms, Collector Efficiency f = 135 MHz) q 60 - - % Power Input Test Circuit Figure 12 in - - 0.5 Watt Common-Emitter Amplifier | cx = 28 Vde. Poy, = 4-0 Watts, pe 9.0 - - dB Power Gain Rg = 50 ohms, Ry, = 50 ohms, Collector Efficiency n 60 - - % f{ = 175 MHz) * Pulsed thru 25 mH inductor (See Figures 5 and 6). 9-75 RF Transistors 2N3375, 2N3553, 2N3632, 2N3961 (continued) POWER OUTPUT versus FREQUENCY COMMON EMITTER ~ Vcg = 28 Vde, Te = 25C FIGURE 1 2N3375 Pin = 2.0 W n oS Pout, RF POWER OUTPUT (WATTS) 100 150 200 250) 300 400 f, FREQUENCY ( MHz) FIGURE 3- 2N3632 Pi, = 3.0W Pius, RF POWER QUTPUT (WATTS) 5060 30 100 150 200 300 f, FREQUENCY (nate) FIGURE 2- 2N3553 10 n= OSH 80 a E = 60 > = 3 ao S 4 2 & 3 = 20 0 50 75 100 150200 300 400 f, FREQUENCY ( Miz) FIGURE 4~ 2N3961 Pin = LOW Pout, RF POWER OUTPUT (WATTS) 100 150 200 300 f, FREQUENCY (MHz) BVcrojus) PULSE TEST CIRCUITS FIGURE 5- 2N3375, 2N3553, 2N3632 10X PROBE TEKTRONIX.P6O0O 0 OR EQUIVALENT TO SCOPE VERT. TEKTRONIX 503 a om OR EQUIVALENT _o _ 1 ya OER 77 POWER be SUPPLY fv NW 4 Oo L Oo -1q-2 592 TO SCOPE HORIZ. * 60 Hz 80% DUTY CYCLE 3 RELAY FIGURE 6 2N3961 10 SCOPE SED bo Hs e | 10x PROBE | VERT. 50% [ RELAY TEKTRONIX |_o DUTY P6000 08 TT Tecreowix EQUIVALENT CYCLE EXTRON = EQUIVALENT 159 POWER POWER uNit SUPPLY SUPPLY UNDER TEST TO SCOPE HORIZONTAL SENSING 9-76 RF Transistors 2N3375, 2N3553, 2N3632, 2N3961 (continued) TEST CIRCUITS 2N3375 FIGURE 7 100 MHZ FIGURE 8 400 MHZ +28V 4.40 pF Rt = | 8 BIAS stu 23375 TEE STUB Rs = 502 3. STUB "J 2N3375 TUNER Ly: 3T No. 16 wire 44 |.D.,5/16" long OPEeTN 4 Lz: 5T No. 16 wire 5/16 1.D.,7/16 long > aa 2N3553 2N3632 FIGURE 9 175 MHZ FIGURE 10 175 MHZ 3.35 pF 3-35 pP RL = r 502 Rs = 50Q L Rs= 2N3553 R= ) 3-35 pF 8-60p Ly: 2T No. 16 wire 3/16 1.D., %4 long +28V Ly, La: AT No. 18 wire 4""1.D., 3/16" long La: 2T No. 16 wire 3/16 1.D., 4 long La: IT No. 16 wire 4 1.D., 3/16 long Ly: 37 No. 16 wire 34 L.D., 34 long Ly: 2427 No. 16 wire 44 1.D., 44 long 2N3961 FIGURE 11 - 135 MHZ FIGURE 12 175 MHZ 2N3961 2N3961 Rs = 502 Ry = 502 Ly, C C, = = SNe S = C,, C3 = 5-50 pr (Air Variable) Chews 1-12 pF (Air Variable) Cy = 7-100 pF (Air Variable} 4125V Crs 1:30 pF (Air Variable) C, = 1-30 pF (Air Variable) (Air Variable) Cs = 1000 pF {Disc Ceramic) (Air Variable) Cy = 0.02 uF (Disc Ceramic} Ly = 3T No. 16 wire, 5/16 1.D., 5/16 long Lz = 5T No. 16 wire, 7/16 1.D., 9 long {Disc Ceramic) (Disc Ceramic) 2T No. 18 enameled wire 4"'1.D.,air wound 3/16 long Lace cece e eee RFC, Qy <1