PNP Silicon Planar Medium Power ZTX750 2ZTX751 ZTX752 ZTX753 Transistors FEATURES @ 1.5W power dissipation at Tamp=25C* @ 2V continuous Ic @ Excellent gain characteristics to 2A @ High Veep: up to 100V Low saturation voltages @ Guaranteed hg; specified up to 2A @ Fast switching @ Exceptional price-to-power ratio . . @ Complementary types Plastic E-Line DESCRIPTION A range of high performance medium power transistors encapsulated in the popular E-line (TO-92) plastic package. The 1.5W performance and outstanding electrical characteristics permit use in a wide variety of industrial and consumer applications including lamp and solenoid drivers, audio amplifiers and complementary drivers for hi-fi amplifiers. ABSOLUTE MAXIMUM RATINGS (TO-92 Compatible) In addition to achieving excellent linearity the devices are designed to function as high speed power switching transistors. The specially selected silicone encapsulation provides resistance to severe environments comparable with metal can devices. Complementary to ZTX650 series. Parameter Symbol |ZTX750 | ZTX751 | ZTX752|ZTX753| Unit Collector-base voltage Veso 60 -80 -100 | -120 Vv Collector-emitter voltage Vero 45 ~60 -80 - 100 Vv Emitter-base voltage Vepo 5 Vv Peak pulse current (see note below) | Icy -6 A Continuous collector current Ic -2 A Practical power dissipation* Prote 1.5 Ww Power dissipation at T,,, = 25C Prot 1 w derate above 25C 5.7 mW/C at Tyase = 25C 2.5 Ww Operating & storage temp. range G: terg -5 to +200 c Note: Consult Safe Operating Area graph for conditions. *The power which can be dissipated assuming device mounted in typical manner on P.C.B. with copper equal to 1 sq.inch minimum. SE163ZTX750 ZTX751 CHARACTERISTICS (at T,,,, = 25C unless otherwise stated). ZTX750 ZTX751 P; t I Unit Conditi arameter Symbol Min.| Typ. | Max. [Min.| Typ. | Max. ni onditions Collector-base Vierrcao |~ 60] - - |-80) - - Vio ig= 100pA breakdown voltage Collector-emitter Viemceo}-45] - - |-60; - - Vi |le=10mA breakdown voltage Emitter-base Viaryeso | 5 - - -5 - - Vi | le= 100pA breakdown voltage Collector cut-off logo - - -O.1]) - - - uA | Vog= ~45V current - - -10] - - - BA | Veg= ~45V, Tamp = 100C > - - - - ~0.1] vA | Vog= -60V - - - - - 10 | pA | Veg = 6OV, Tamp = 100C Emitter cut-off lego - - |-0.1] - - |-0.1] pA | Veg=4V current Collector-emitter Veeteat! - | 0.15 | -O0.3) -~ | 0.15 | -0.3 [p= 1A, lg= 100mA* saturation voltage | 0.28] -0.5) | 0.28 | -0.5) V |I,=-2A, lg= 200mA* Base-emitter Vectent) |-0.90)1.25) - |-0.90)~1.25) V |I.= 1A, I,= 100mA* saturation voltage Base-emitter turn-on | Vge;on) ~ | -O.8;-1.0) - | -0.8] -1.0] V |Ip=1A, Vog=-2V* voltage Static forward Nee 70 |} 200 = 70 | 200 - to = 50mMA, Voge = 2V* current transfer ratio 100] 200 | 300 | 100] 200 | 300 Ip = ~ 500mA, Veg = - 2V 80 | 170 - 80 | 170 - le= 1A, Veg = 2V* 40 | 150 - 40 | 150 - Ip = 2A, Vog = 2V* Transition frequency | f; 100] 140 ~ 1100] 140 [MHz] 1. = - 100mA, Vog = - 5V f = 100MHz Switching times Ton - 40 - - 40 - ns Me = 500mA, |, = 50mA 1 Tort - | 450 ~ ~ | 450 - ns | Jig, = ~50mA, Vec = 10V Output capacitance | C,,, _ _ 30 _ _ 30 pF | Vog= 10V, f = IMHz *Measured under pulsed conditions. Pulse width = 300us. Duty cycle< 2%. THERMAL CHARACTERISTICS (ZTX750/3) Parameter Symbol Maximum Unit Thermal resistance: Junction to ambient, Reng-amb)1 175 oc/jw Junction to ambient, RinG-amb)2t 116 Ciw Junction to case th(j-case) 70 C/W tDevice mounted on P.C.B. with copper equal to 1 sq.inch minimum. SE164CHARACTERISTICS (at T,,,, = 25C unless otherwise stated). ZTX752 ZTX753 ZTX752 ZTX753 P Ss I Unit Conditions arameter ymbo Min. | Typ. | Max. | Min. | Typ. | Max. ni onditi Collector-base Visricao }- 100) - [+120] - - Vi [le= 100uA breakdown voltage Collector-emitter | Vigmceo | 80] ~ |-100) - - Vi Jlg=~10mA breakdown voltage Emitter-base Viprieso | 5 - - -5 - ~ Vo [Ie= - 100pA breakdown voltage Collector cut-off | legg - - -O.1] - - - #A | Vcg= 80V current ~ ~ -10 - - ~ BA | Vog = 80V, Tap = 100C - - - - - 0.1 | vA | Veg = 100V - - - - - -10 | pA | Veg = 100V, Tay = 100C Emitter cut-off lego - ~ -O.1] - - -0.1] vA | Veg= -4V current Collector-emitter | Vogisaty - 0.17 | -O.3)] - 0.17 | -0.3 le= 1A, lg= 100mA* saturation voltage - 0.30 | -0.5) - 0.30 | -0.5 Ie = 2A, lz = 200mA* Base-emitter Veeisat) - |-0.90)~1.25) |-0.90)-1.25) V |I,=-1A, Ig= - 100mA* saturation voltage Base-emitter Veeion) - |-0.8)-1.0) - | -0.8)-1.0] V |Ik=-1A, Veg= -2V* turn-on voltage Static forward Hee 70 | 200 - 70 | 200 - Ip= 50mMA, Vee = - 2V* current transfer ratio 100 | 200 | 300 | 100 | 200 | 300 Ip = 500mA, Vog= 2V* 55 | 170 - 55 | 170 - le= 1A, Veg = 2V* 25 55 - 25 55 - Io= 2A, Veg = 2V* Transition fr 100 | 140 - 100 | 140 [MHz] 1I-= 100mA, Vo_ = 5V frequency f = 100MHz Switching times | T,, - 40 - - 40 - |ns per -500m