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TIP105 / TIP107 PNP Epitaxial Silicon Darlington Transistor Equivalent Circuit Features C * Monolithic Construction with Built-in Base-Emitter Shunt Resistors * High DC Current Gain: hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum) * Collector-Emitter Sustaining Voltage * Low Collector-Emitter Saturation Voltage * Industrial Use * Complementary to TIP102 B TO-220 1 1.Base 2.Collector R1 3.Emitter R2 R1 10k R2 0.6k E Ordering Information Part Number Top Mark Package Packing Method TIP105 TIP105 TO-220 3L (Single Gauge) Bulk TIP105TU TIP105 TO-220 3L (Single Gauge) Rail TIP107 TIP107 TO-220 3L (Single Gauge) Bulk TIP107TU TIP107 TO-220 3L (Single Gauge) Rail Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TC = 25C unless otherwise noted. Symbol Parameter VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Value TIP105 -60 TIP107 -100 TIP105 -60 TIP107 -100 -5 Unit V V V IC Collector Current (DC) -8 A ICP Collector Current (Pulse) -15 A IB Base Current (DC) -1 A TJ Junction Temperature 150 C -65 to 150 C TSTG Storage Temperature Range (c) 2001 Fairchild Semiconductor Corporation TIP105 / TIP107 Rev. 1.1.0 www.fairchildsemi.com TIP105 / TIP107 -- PNP Epitaxial Silicon Darlington Transistor December 2014 Values are at TC = 25C unless otherwise noted. Symbol PC Parameter Value Collector Dissipation (TA = 25C) 2 Collector Dissipation (TC = 25C) 80 Unit W Electrical Characteristics(1) Values are at TC = 25C unless otherwise noted. Symbol VCEO(sus) Parameter Collector-Emitter Sustaining Voltage ICEO Collector Cut-Off Current ICBO Collector Cut-Off Current IEBO Emitter Cut-Off Current hFE DC Current Gain Conditions TIP105 TIP107 IC = -30 mA, IB = 0 Min. Max. -60 V -100 TIP105 VCE = -30 V, IB = 0 -50 TIP107 VCE = -50 V, IB = 0 -50 TIP105 VCB = -60 V, IE = 0 -50 TIP107 VCB = -100 V, IE = 0 -50 VEB = -5 V, IC = 0 -2 VCE = -4 V, IC = -3 A 1000 VCE = -4 V, IC = -8 A 200 Unit A A mA 20000 VCE(sat) Collector-Emitter Saturation Voltage IC = -3 A, IB = -6 mA -2.0 IC = -8 A, IB = -80 mA -2.5 VBE(on) Base-Emitter On Voltage VCE = -4 V, IC = -8 A -2.8 V Output Capacitance VCB = -10 V, IE = 0, f = 0.1 MHz 300 pF Cob V Note: 1. Pulse test: pw 300 s, duty cycle 2%. (c) 2001 Fairchild Semiconductor Corporation TIP105 / TIP107 Rev. 1.1.0 www.fairchildsemi.com 2 TIP105 / TIP107 -- PNP Epitaxial Silicon Darlington Transistor Thermal Characteristics 10k -5 IB = -800A -4 VCE = -4V IB = -700A IB = -900A IB = -600A hFE, DC CURRENT GAIN IC[A], COLLECTOR CURRENT IB = -1000A IB = -500A -3 IB = -400A -2 IB = -300A -1 1k IB = -200A 100 -0.1 -0 -0 -1 -2 -3 -4 -5 -1 Figure 1. Static Characteristic Figure 2. DC Current Gain -100k 10k IC = 500 IB f = 0.1 MHz IE = 0 Cob[pF], CAPACITANCE VBE(sat), VCE(sat) [mV], SATURATION VOLTAGE -10 Ic[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE -10k VBE(sat) -1k VCE(sat) -100 -0.1 -1 -10 1k 100 10 1 -0.1 -100 -1 -10 -100 VCB[V], COLLECTOR-BASE VOLTAGE IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage and Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance 100 -100 PC[W], POWER DISSIPATION s 0 10 -10 DC s 5m IC[mA], COLLECTOR CURRENT 90 1ms -1 -0.1 TIP105 TIP106 TIP107 -0.01 -0.1 80 70 60 50 40 30 20 10 0 -1 -10 0 -100 VCE[V], COLLECTOR-EMITTER VOLTAGE 50 75 100 125 150 175 o TC[ C], CASE TEMPERATURE Figure 5. Safe Operating Area (c) 2001 Fairchild Semiconductor Corporation TIP105 / TIP107 Rev. 1.1.0 25 Figure 6. Power Derating www.fairchildsemi.com 3 TIP105 / TIP107 -- PNP Epitaxial Silicon Darlington Transistor Typical Performance Characteristics TIP105 / TIP107 -- PNP Epitaxial Silicon Darlington Transistor Physical Dimensions Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB (c) 2001 Fairchild Semiconductor Corporation TIP105 / TIP107 Rev. 1.1.0 www.fairchildsemi.com 4 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. F-PFS FRFET(R) SM Global Power Resource GreenBridge Green FPS Green FPS e-Series Gmax GTO IntelliMAX ISOPLANAR Making Small Speakers Sound Louder and BetterTM MegaBuck MICROCOUPLER MicroFET MicroPak MicroPak2 MillerDrive MotionMax MotionGrid(R) MTi(R) MTx(R) MVN(R) mWSaver(R) OptoHiT OPTOLOGIC(R) AccuPower Awinda(R) AX-CAP(R)* BitSiC Build it Now CorePLUS CorePOWER CROSSVOLT CTL Current Transfer Logic DEUXPEED(R) Dual CoolTM EcoSPARK(R) EfficientMax ESBC (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet Series FACT(R) FAST(R) FastvCore FETBench FPS OPTOPLANAR(R) (R) PowerTrench(R) PowerXSTM Programmable Active Droop QFET(R) QS Quiet Series RapidConfigure Saving our world, 1mW/W/kW at a timeTM SignalWise SmartMax SMART START Solutions for Your Success SPM(R) STEALTH SuperFET(R) SuperSOT-3 SuperSOT-6 SuperSOT-8 SupreMOS(R) SyncFET Sync-LockTM (R)* (R) TinyBoost TinyBuck(R) TinyCalc TinyLogic(R) TINYOPTO TinyPower TinyPWM TinyWire TranSiC TriFault Detect TRUECURRENT(R)* SerDes UHC(R) Ultra FRFET UniFET VCX VisualMax VoltagePlus XSTM XsensTM TM * Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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