TIP105TU - ON SEMICONDUCTOR

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TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor

TIP105 / TIP 107 Rev. 1.1.0

December 2014

TIP105 / TIP107

PNP Epitaxial Silicon Darlington Transistor

Features

• Monolithic Constructi on with Built-in Base -Emitte r

Shunt Resistors

• High DC Current Gain:

hFE = 1000 @ VCE = -4 V, IC = -3 A (Minimum)

• Collector-Emitter Sustaining Voltage

• Low Collector-Emitter Saturation Voltage

• Industr ial Use

• Complementary to TIP102

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

TIP105 TIP105 TO-220 3L (Single Gauge) Bulk

TIP105TU TIP105 TO-220 3L (Single Gauge) Rail

TIP107 TIP107 TO-220 3L (Single Gauge) Bulk

TIP107TU TIP107 TO-220 3L (Single Gauge) Rail

Symbol Parameter Value Unit

VCBO Collector-Base Voltage TIP105 -60 V

TIP107 -100

VCEO Collector-Emitter Voltage TIP105 -60 V

TIP107 -100

VEBO Emitter-Base Voltage -5 V

ICCollector Current (DC) -8 A

ICP Collector Current (Pulse) -15 A

IBBase Current (DC) -1 A

TJJunction Temperat ure 150 °C

TSTG Storage Temperature Range -65 to 150 °C

1.Base 2.Collector 3.Emitter

1TO-220

R1 10kΩ≅

R2 0.6kΩ≅

Equivalent Circuit

R1 R2

TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor

TIP105 / TIP 107 Rev. 1.1.0 2

Thermal Characteristics

Values are at TC = 25°C unless otherwise noted.

Electrical Characteristics(1)

Values are at TC = 25°C unless otherwise noted.

Note:

1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.

Symbol Parameter Value Unit

PC Collector Dissipation (TA = 25°C) 2 W

Collector Dissipation (TC = 25°C) 80

Symbol Parameter Conditions Min. Max. Unit

VCEO(sus) Collector-Emitter Sustaining

Voltage TIP105 IC = -30 mA, IB = 0 -60 V

TIP107 -100

ICEO Collector Cut-Off Current TIP105 VCE = -30 V, IB = 0-50

μA

TIP107 VCE = -50 V, IB = 0-50

ICBO Collector Cut-Off Current TIP105 VCB = -60 V, IE = 0 -50 μA

TIP107 VCB = -100 V, IE = 0 -50

IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -2 mA

hFE DC Current Gain VCE = -4 V, IC = -3 A 1000 20000

VCE = -4 V, IC = -8 A 200

VCE(sat) Collector-Emitter Saturation

Voltage IC = -3 A, IB = -6 mA -2.0 V

IC = -8 A, IB = -80 mA -2.5

VBE(on) Base-Emitter On Voltage VCE = -4 V, IC = -8 A -2.8 V

Cob Output Capacitance VCB = -10 V, IE = 0,

f = 0.1 MHz 300 pF

TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor

TIP105 / TIP 107 Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. Static Characteristic Figure 2. DC Current Gain

Figure 3. Collector-Emitter Saturation Voltage and

Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance

Figure 5. Safe Operating Area Figure 6. Power Derating

-0 -1 -2 -3 -4 -5

-0

-1

-2

-3

-4

-5

IB = -800μA

IB = -900 μA

IB = -1000μA

IB = -700μA

IB = -600μA

IB = -500μA

IB = -400μA

IB = -300 μA

IB = -200μA

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR -EMITTER VOLTA GE

-0.1 -1 -10

100

10k

VCE = -4V

hFE, DC CURRENT GAIN

Ic[A], COLLECTOR CURRENT

-0.1 -1 -10 -100

-100

-1k

-10k

-100k

IC = 500 IB

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat) [m V], SATU R ATI ON VOLTAGE

IC[A], COLLECTOR CURRENT

-0.1 -1 -10 -100

100

10k

f = 0.1 MHz

IE = 0

Cob[pF], CAPACITANCE

VCB[V], COLLECTOR-BASE VOLTAGE

-0.1 -1 -10 -100

-0.01

-0.1

-1

-10

-100

TIP106

TIP107

TIP105

5ms

100

1ms

IC[mA], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175

100

PC[W], POWER DISSIPATION

TC[oC], CASE TEMPERATURE

TIP105 / TIP107 — PNP Epitaxial Silicon Darlington Transistor

TIP105 / TIP 107 Rev. 1.1.0 4

Physical Dimensions

Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

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Rev. I72

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