MMBT3906
Features
Epitaxial Planar Die Construction
Complementary NPN Type Available
(MMBT3904)
Ideal for Medium Power Amplification and
Switching
General Purpose Transistor (PNP)
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COMCHIP
MDS0306002A
Page 1
PNP Silicon Type
SOT-23
Dimensions in inches (millimeters)
.037(0.95).037(0.95)
.006(0.15)max.
.119 (3.0)
.020 (0.5)
.020 (0.5)
Top View
.103(2.6)
.006(0.15)
.044(1.10)
.110 (2.8)
.047 (1.20
)
.002(0.05)
.086 (2.2)
.035(0.90)
.020 (0.5)
.056 (1.40)
3
12
COLLECTOR
3
1
BASE
2
EMITTER
MAXIMUM RATINGS
Rating
Symbol
Value Unit
Collector–Emitter Voltage
VCEO
–40
Vdc
Collector–Base Voltage
VCBO
–40
Vdc
Emitter–Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–200
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5 Board(1)
TA = 25°C
Derate above 25°C
PD
225
1.8
mW
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
556
°C/W
Total Device Dissipation
Alumina Substrate,(2) TA = 25°C
Derate above 25°C
PD
300
2.4
mW
mW/°C
Thermal Resistance Junction to Ambient
R
q
JA
417
°C/W
Junction and Storage Temperature
TJ, Tstg
–55 to +150 °C
MDS0306002APage 2
COMCHIP
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General Purpose Transistor
General Purpose Transistor
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(IC = –1.0 mAdc, IB = 0) V(BR)CEO –40 —Vdc
Collector–Base Breakdown Voltage
(IC = –10
m
Adc, IE = 0) V(BR)CBO –40 —Vdc
Emitter–Base Breakdown Voltage
(IE = –10
m
Adc, IC = 0) V(BR)EBO –5.0 —Vdc
Base Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc) IBL —–50 nAdc
Collector Cutoff Current
(VCE = –30 Vdc, VEB = –3.0 Vdc) ICEX —–50 nAdc
1. FR–5 = 1.0
0.75
0.062 in.
2. Alumina = 0.4
0.3
0.024 in. 99.5% alumina.
3. Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%.
REM : Thermal Clad is a trademark of the Bergquist Company.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
ON CHARACTERISTICS(3) Symbol Min Max Unit
DC Current Gain
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
(IC = –1.0 mAdc, VCE = –1.0 Vdc)
(IC = –10 mAdc, VCE = –1.0 Vdc)
(IC = –50 mAdc, VCE = –1.0 Vdc)
(IC = –100 mAdc, VCE = –1.0 Vdc)
HFE 60
80
100
60
30
—
—
300
—
—
—
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VCE(sat) —
—–0.25
–0.4
Vdc
Base–Emitter Saturation Voltage
(IC = –10 mAdc, IB = –1.0 mAdc)
(IC = –50 mAdc, IB = –5.0 mAdc)
VBE(sat) –0.65
—–0.85
–0.95
Vdc
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) fT250 —MHz
Output Capacitance
(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo —4.5 pF
Input Capacitance
(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo —10 pF
Input Impedance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hie 2.0 12 kΩ
Voltage Feedback Ratio
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hre 0.1 10 X 10–4
Small–Signal Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hfe 100 400 —
Output Admittance
(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz) hoe 3.0 60
m
mhos
Noise Figure
(IC = –100
m
Adc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz) NF —4.0 dB
SWITCHING CHARACTERISTICS
Delay Time (V
CC = –3.0 Vdc, VBE = 0.5 Vdc,
I = –10 mAdc, I = –1.0 mAdc)
td—35
ns
Rise Time
(VCC = –3.0 Vdc, VBE = 0.5 Vdc,
IC = –10 mAdc, IB1 = –1.0 mAdc) tr—35
ns
Storage Time (V
CC = –3.0 Vdc, IC = –10 mAdc,
I = I = –1.0 mAdc)
ts—225
ns
Fall Time
IB1 = IB2 = –1.0 mAdc) tf—75
ns
3.Pulse Test: Pulse Width ı 300 ıs, Duty Cycle ı 2.0%.
MDS0306002APage 3
COMCHIP
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General Purpose Transistor
General Purpose Transistor
Rating and Characteristic Curves (MMBT3906)
Figure 1. Delay and Rise Time
Equivalent Test Circuit Figure 2. Storage and Fall Time
Equivalent Test Circuit
3 V
275
10 k
1N916 CS < 4 pF*
3 V
275
10 k
CS < 4 pF*
< 1 ns
+0.5 V
10.6 V 300 ns
Duty Cycle = 2%
< 1 ns
+9.1 V
10.9 V
Duty Cycle = 2% t1
0
10 < t1 < 500
m
s
* T otal shunt capacitance of test jig and connectors
TYPICAL TRANSIENT CHARACTERISTICS
Figure 3. Capacitance
Reverse Bias (V)
2.0
3.0
5.0
7.0
10
1.00.1
Figure 4. Charge Data
IC, Collector Current (mA)
5000
1.0
VCC = 40 V
IC/IB = 10
Q, Charge (pC)
3000
2000
1000
500
300
200
700
100
50
70
2.0 3.0 5.0 7.0 10 20 30 50 70 100 200
Capacitance (pF)
1.0 2.0 3.0 5.0 7.0 10 20 30 40
0.2 0.3 0.5 0.7
QTQA
Cibo
Cobo
TJ = 25
°
C
TJ = 125
°
C
Figure 5. Turn–On Time
IC, Collector Current (mA)
70
100
200
300
500
50
Time (ns)
1.0 2.0 3.0 10 20 70
5100
Figure 6. Fall Time
IC, Collector Current (mA)
5.0 7.0 30 50 200
10
30
7
20
70
100
200
300
500
50
1.0 2.0 3.0 10 20 70
5100
5.0 7.0 30 50 20
0
10
30
7
20
t , FallTime (ns)
f
VCC = 40 V
IB1 = IB2
IC/IB = 20
IC/IB = 10
IC/IB = 10
tr @ VCC = 3.0 V
td @ VOB = 0 V
40 V
15 V
2.0 V
MDS0306002APage 4
COMCHIP
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General Purpose Transistor
Rating and Characteristic Curves (MMBT3906)
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = –5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
Figure 7.
f, Frequency (kHz)
2.0
3.0
4.0
5.0
1.0
0.1
Figure 8.
Rg, Source Resistance (k OHMS)
0
NF, Noise Figure (dB)
1.0 2.0 4.0 10 20 40
0.2 0.4
0100
4
6
8
10
12
2
0.1 1.0 2.0 4.0 10 20 40
0.2 0.4 1
00
NF, Noise Figure (dB)
f = 1.0 kHz IC = 1.0 mA
IC = 0.5 mA
IC = 50
m
A
IC = 100
m
A
SOURCE RESISTANCE = 200
W
IC = 1.0 mA
SOURCE RESISTANCE = 200
W
IC = 0.5 mA
SOURCE RESISTANCE = 2.0 k
IC = 100
m
A
SOURCE RESISTANCE = 2.0 k
IC = 50
m
A
h PARAMETERS
(VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C)
Figure 9. Current Gain
IC, Collector Current (mA)
70
100
200
300
50
Figure 10. Output Admittance
IC, Collector Current (mA)
h , DC Current Gain
h , Output Admittance ( mhos)
Figure 11. Input Impedance
IC, Collector Current (mA)
Figure 12. Voltage Feedback Ratio
IC, Collector Current (mA)
30
100
50
10
20
2.0
3.0
5.0
7.0
10
1.0
0.1 0.2 1.0 2.0 5.0
0.5 1
0
0.3 0.5 3.0
0.7
2.0
5.0
10
20
1.0
0.2
0.5
oe
h , Voltage Feedback Ratio (X 10 )
re
h , Input Impedance (k OHMS)
ie
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
0.1 0.2 1.0 2.0 5.0 1
0
0.3 0.5 3.0
7
5
0.1 0.2 1.0 2.0 5.0 10
0.3 0.5 3.0
fe
m
–4
70
30
0.7 7.0
0.7 7.0
7.0
3.0
0.7
0.3
0.7 7.0
0.7 7.0
MDS0306002APage 5
COMCHIP
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General Purpose Transistor
General Purpose Transistor
Rating and Characteristic Curves (MMBT3906)
TYPICAL STATIC CHARACTERISTICS
Figure 13. DC Current Gain
IC, Collector Current (mA)
0.3
0.5
0.7
1.0
2.0
0.2
0.1
h , DC Current Gain (Normalized)
0.5 2.0 3.0 10 50 70
0.2 0.3
0.1 100
1.00.7 200
30205.0 7.0
FE
VCE = 1.0 V
TJ = +125
°
C
+25
°
C
–55
°
C
Figure 14. Collector Saturation Region
IB, Base Current (mA)
0.4
0.6
0.8
1.0
0.2
0.1
V , Collector Emitter Voltage (V)
0.5 2.0 3.0 100.2 0.3
01.00.7 5.0 7.0
CE
IC = 1.0 mA
TJ = 25
°
C
0.070.050.030.020.01
10 mA 30 mA 100 mA
Figure 15. “ON” Voltages
IC, Collector Current (mA)
0.4
0.6
0.8
1.0
0.2
Figure 16. Temperature Coefficients
IC, Collector Current (mA)
V, Voltage (V)
1.0 2.0 5.0 10 20 50
0100
–0.5
0
0.5
1.0
0 60 80 120 140 160 180
20 40 100 20
0
–1.0
–1.5
–2.0
200
TJ = 25
°
C VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V +25
°
C TO +125
°
C
–55
°
C TO +25
°
C
+25
°
C TO +125
°
C
–55
°
C TO +25
°
C
q
VC FOR VCE(sat)
q
VB FOR VBE(sat)
, Temperature Coefficients (mV/ C)
°
V
q