2N7002
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N7002 type is an
N-Channel enhancement-mode MOSFET manufactured
by the N-Channel DMOS Process, designed for high
speed pulsed amplifier and driver applications.
MARKING CODE: 702
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Drain-Source Voltage VDS 60 V
Drain-Gate Voltage VDG 60 V
Gate-Source Voltage VGS 40 V
Continuous Drain Current (TC=25°C) ID 115 mA
Continuous Drain Current (TC=100°C) ID 75 mA
Continuous Source Current (Body Diode) IS 115 mA
Maximum Pulsed Drain Current IDM 800 mA
Maximum Pulsed Source Current ISM 800 mA
Power Dissipation PD 350 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
IGSSF V
GS=20V 100 nA
IGSSR VGS=20V 100 nA
IDSS V
DS=60V, VGS=0 1.0 μA
IDSS V
DS=60V, VGS=0, TA=125°C 500 μA
ID(ON) VDS=10V, VGS=10V 500 mA
BVDSS I
D=10μA 60 105 V
VGS(th) VDS=VGS, ID=250μA 1.0 2.1 2.5 V
VDS(ON) VGS=10V, ID=500mA 3.75 V
VDS(ON) VGS=5.0V, ID=50mA 0.375 V
VSD VGS=0, IS=11.5mA 1.5 V
rDS(ON) V
GS=10V, ID=500mA 3.7 7.5 Ω
rDS(ON) V
GS=10V, ID=500mA, TA=100°C 13.5 Ω
rDS(ON) V
GS=5.0V, ID=50mA 6.2 7.5 Ω
rDS(ON) V
GS=5.0V, ID=50mA, TA=100°C 13.5 Ω
gFS V
DS=10V, ID=200mA 80 mS
SOT-23 CASE
R6 (9-February 2015)
www.centralsemi.com
2N7002
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODE: 702
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS TYP MAX UNITS
Crss V
DS=25V, VGS=0, f=1.0MHz 5.0 pF
Ciss V
DS=25V, VGS=0, f=1.0MHz 50 pF
Coss VDS=25V, VGS=0, f=1.0MHz 25 pF
Qg(tot) VDS=30V, VGS=4.5V, ID=100mA 0.592 nC
Qgs VDS=30V, VGS=4.5V, ID=100mA 0.196 nC
Qgd VDS=30V, VGS=4.5V, ID=100mA 0.148 nC
ton VDD=30V, ID=200mA, RG=25Ω, RL=150Ω 20 ns
toff VDD=30V, ID=200mA, RG=25Ω, RL=150Ω 20 ns
3
21
www.centralsemi.com
R6 (9-February 2015)
2N7002
SURFACE MOUNT SILICON
N-CHANNEL
ENHANCEMENT-MODE
MOSFET
TYPICAL ELECTRICAL CHARACTERISTICS
R6 (9-February 2015)
www.centralsemi.com
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