NTD4813NH, NVD4813NH Power MOSFET 30 V, 40 A, Single N-Channel, DPAK/IPAK Features * * * * * * Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses Low RG AEC-Q101 Qualified and PPAP Capable - NVD4813NH These Devices are Pb-Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(ON) MAX 13 mW @ 10 V 30 V 25.9 mW @ 4.5 V Applications * CPU Power Delivery * DC-DC Converters * High Side Switching Symbol G Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS 20 V ID 9.0 A Continuous Drain Current RqJA (Note 1) TA = 25C Power Dissipation RqJA (Note 1) TA = 25C PD 1.94 W Continuous Drain Current RqJA (Note 2) TA = 25C ID 7.6 A TA = 85C 7.0 TA = 85C 5.9 TA = 25C PD 1.27 W Continuous Drain Current RqJC (Note 1) TC = 25C ID 40 A Power Dissipation RqJC (Note 1) TC = 25C PD 35.3 W TA = 25C IDM 90 A TA = 25C IDmaxPkg 35 A TJ, TSTG -55 to +175 C Pulsed Drain Current TC = 85C tp=10ms Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) S N-CHANNEL MOSFET 31 IS 29 A Drain to Source dV/dt dV/dt 6 V/ns Single Pulse Drain-to-Source Avalanche Energy (VDD = 24 V, VGS = 10 V, IL = 17.2 Apk, L = 0.3 mH, RG = 25 W) EAS 44.4 mJ Lead Temperature for Soldering Purposes (1/8" from case for 10 s) TL 260 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 4 1 2 3 DPAK CASE 369AA (Bent Lead) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain YWW 48 13NHG Parameter Power Dissipation RqJA (Note 2) 40 A D MAXIMUM RATINGS (TJ = 25C unless otherwise stated) Steady State ID MAX 2 1 Drain 3 Gate Source Y WW 4813NH G = Year = Work Week = Device Code = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 3 1 Publication Order Number: NTD4813NH/D NTD4813NH, NVD4813NH THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction-to-Case (Drain) Parameter RqJC 4.25 Junction-to-TAB (Drain) RqJC-TAB 3.5 Junction-to-Ambient - Steady State (Note 1) RqJA 77.5 Junction-to-Ambient - Steady State (Note 2) RqJA 118.5 Unit C/W 1. Surface-mounted on FR4 board using 1 sq-in pad, 1 oz Cu. 2. Surface-mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Symbol Test Condition Min Drain-to-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain-to-Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate-to-Source Leakage Current IDSS V 24.5 VGS = 0 V, VDS = 24 V mV/C TJ = 25 C 1 TJ = 125C 10 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA mA 100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain-to-Source On Resistance RDS(on) Forward Transconductance 1.5 5.4 VGS = 10 V to 11.5 V ID = 30 A 10.9 ID = 15 A 10.7 VGS = 4.5 V ID = 30 A 20.9 ID = 15 A 18.5 gFS VDS = 15 V, ID = 10 A mV/C 13 25.9 6.7 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 115 Total Gate Charge QG(TOT) 7.1 Threshold Gate Charge QG(TH) Gate-to-Source Charge QGS Gate-to-Drain Charge QGD Total Gate Charge QG(TOT) 940 VGS = 0 V, f = 1.0 MHz, VDS = 12 V VGS = 4.5 V, VDS = 15 V; ID = 30 A 201 1.6 3.4 pF 10 nC 3.0 VGS = 11.5 V, VDS = 15 V; ID = 30 A 18.2 nC SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 10 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 19.5 10.3 2.9 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTD4813NH, NVD4813NH ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) 5.1 VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 16.1 ns 17.2 1.8 DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25C 0.95 TJ = 125C 0.9 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.2 V 15 VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A 9.9 ns 5.1 QRR 7.0 nC Source Inductance LS 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK LD Gate Inductance LG 3.46 Gate Resistance RG 0.55 PACKAGE PARASITIC VALUES TA = 25C 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 1.88 W NTD4813NH, NVD4813NH TYPICAL PERFORMANCE CURVES 5V 6V 60 60 TJ = 25C 4.5 V 50 4.2 V 40 4V 3.8 V 3.6 V 30 20 3.4 V 3.2 V 3V 10 0 2 8 6 4 10 40 30 20 TJ = 125C TJ = 25C 10 TJ = -55C 2 0 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics ID = 30 A TJ = 25C 0.03 0.02 0.01 2 4 6 12 10 8 0.05 TJ = 25C 0.04 0.03 VGS = 4.5 V 0.02 0.01 VGS = 11.5 V 0 10 15 20 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 10,000 1.2 1.0 35 40 45 50 55 60 VGS = 0 V ID = 20 A VGS = 10 V 1.4 30 Figure 4. On-Resistance vs. Drain Current and Gate Voltage IDSS, LEAKAGE (nA) RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 25 ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.8 6 4 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 0.04 0 VDS 10 V 50 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) ID, DRAIN CURRENT (AMPS) 70 0 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 10 V 8V ID, DRAIN CURRENT (AMPS) 80 TJ = 150C 1000 TJ = 100C 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 100 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Drain Voltage http://onsemi.com 4 30 NTD4813NH, NVD4813NH TYPICAL PERFORMANCE CURVES Ciss C, CAPACITANCE (pF) 1000 12 800 600 400 Coss 200 0 Crss 0 10 5 15 20 30 25 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 9 15 10 Q2 3 5 ID = 30 A TJ = 25C 0 0 2 4 6 8 10 12 14 16 QG, TOTAL GATE CHARGE (nC) 18 0 20 IS, SOURCE CURRENT (AMPS) 35 td(off) 10 tr VDD = 15 V ID = 30 A VGS = 11.5 V tf 1 10 RG, GATE RESISTANCE (OHMS) VGS = 0 V 30 20 15 10 5 0 0.2 100 100 ms 1 ms 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 10 1 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 100 EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 10 ms 1 0.6 0.8 1.2 1.0 Figure 10. Diode Forward Voltage vs. Current 100 VGS = 20 V SINGLE PULSE TC = 25C 0.4 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) 1000 10 TJ = 25C 25 Figure 9. Resistive Switching Time Variation vs. Gate Resistance I D, DRAIN CURRENT (AMPS) VGS Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge td(on) t, TIME (ns) VDS Q1 100 0.1 20 QT 6 Figure 7. Capacitance Variation 1 25 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS = 0 V TJ = 25C VGS , GATE-TO-SOURCE VOLTAGE (VOLTS) 15 1200 50 45 ID = 17.2 A 40 35 30 25 20 15 10 5 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 150 100 125 TJ, JUNCTION TEMPERATURE (C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 175 NTD4813NH, NVD4813NH TYPICAL PERFORMANCE CURVES I D, DRAIN CURRENT (AMPS) 100 125C 10 25C 100C 1 0.1 10 100 PULSE WIDTH (ms) 1 1000 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 13. Avalanche Characteristics 1.0 D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 SINGLE PULSE 0.01 1.0E-05 1.0E-04 t1 t2 DUTY CYCLE, D = t1/t2 1.0E-03 1.0E-02 t, TIME (ms) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1.0E-01 1.0E+00 1.0E+01 Figure 14. Thermal Response ORDERING INFORMATION Package Shipping NTD4813NHT4G DPAK (Pb-Free) 2500 / Tape & Reel NVD4813NHT4G DPAK (Pb-Free) 2500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD4813NH, NVD4813NH PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA-01 ISSUE B A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- 6.17 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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