T2500DFP - ON Semiconductor

Motorola Thyristor Device Data

Triacs

Silicon Bidirectional Triode Thyristors

. . . designed primarily for full-wave ac control applications, such as solid-state relays,

motor controls, heating controls and power supplies; or wherever full-wave silicon

gate controlled solid-state devices are needed. Triac type thyristors switch from a

blocking to a conducting state for either polarity of applied anode voltage with positive

or negative gate triggering.

•Blocking Voltage to 400 Volts

•All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and

Stability

•Small, Rugged, Isolated Construction for Low Thermal Resistance, High Heat

Dissipation and Durability

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.)

Rating Symbol Value Unit

Repetitive Peak Off-State Voltage(1)

(TJ = –40 to +100°C, Gate Open) VDRM 400 Volts

On-State RMS Current (TC = +80°C )(2)

(Full Cycle Sine W ave 50 to 60 Hz) IT(RMS) 6Amps

Peak Non–repetitive Surge Current

(One Full Cycle, 60 Hz, TC = +80°C) ITSM 60 Amps

Circuit Fusing Considerations

(t = 8.3 ms) I2t 40 A2s

Peak Gate Power

(TC = +80°C, Pulse Width = 1 µs) PGM 1Watt

Average Gate Power

(TC = +80°C, t = 8.3 ms) PG(AV) 0.2 Watt

Peak Gate Trigger Current (Pulse Width = 10 µs) IGTM 4 Amps

RMS Isolation Voltage (TA = 25°C, Relative Humidity

20%) V ISO 1500 Volts

Operating Junction Temperature Range TJ–40 to +100 °C

Storage Temperature Range Tstg –40 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case(2)

Case to Sink

Junction to Ambient

RθJC

RθCS

RθJA

2.7

2.2(typ)

°C/W

1. VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

2. The case temperature reference point for all TC measurements is a point on the center lead of the package as close as possible to the plastic

body.

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

 Motorola, Inc. 1999

MT1

MT2

T2500DFP

CASE 221C-02

STYLE 3

ISOLATED TRIACs

THYRISTORS

6 AMPERES RMS

400 VOLTS

T2500DFP

2 Motorola Thyristor Device Data

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic Symbol Min Typ Max Unit

Peak Off–State Current (Either Direction)

(VD = Rated VDRM, TJ = 100°C, Gate Open) IDRM — — 2 mA

Maximum On-State Voltage (Either Direction)*

(IT = 30 A Peak) VTM — — 2 Volts

Gate Trigger Current (Continuous dc)

(VD = 12 Vdc, RL = 12 Ohms) MT2(+), G(+)

MT2(+), G(–)

MT2(–), G(–)

MT2(–), G(+)

IGT

—

Gate Trigger Voltage (Continuous dc) (All Quadrants)

(VD = 12 Vdc, RL = 12 Ohms)

(VD = VDROM, RL = 125 Ohms, TC = 100°C, All Trigger Models)

VGT —

0.2 1.25

—2.5

—

Volts

Holding Current (Either Direction)

(Main Terminal Voltage = 12 Vdc, Gate Open,

Initiating Current = 150 mA, TC = 25°C)

IH— 15 30 mA

Gate Controlled Turn-On Time

(VD = Rated VDRM, IT = 10 A,

IGT = 160 mA, Rise Time

0.1 µs)

tgt —1.6 — µs

Critical Rate–of–Rise of Commutation Voltage

(VD = Rated VDRM, IT(RMS) = 6 A,

Commutating di/dt = 3.2 A/ms,

Gate Unenergized, TC = 80°C)

dv/dt(c) — 10 — V/µs

Critical Rate–of–Rise of Off–State Voltage

(VD = Rated VDRM, Exponential Voltage Rise,

Gate Open, TC = 100°C)

dv/dt — 100 — V/µs

*Pulse Test: Pulse Width

300 µs, Duty Cycle

2%.

Quadrant II Quadrant I

Quadrant III Quadrant IV

MT2(+), G(–) MT2(+), G(+)

MT2(–), G(–) MT2(–), G(+)

Quadrant Definitions

MT2(+)

MT2(–)

G(–) G(+)

T2500DFP

Motorola Thyristor Device Data

PACKAGE DIMENSIONS

CASE 221C-02

123

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. LEAD DIMENSIONS UNCONTROLLED WITHIN

DIMENSION Z.

STYLE 3:

PIN 1. MT 1

2. MT 2

3. GATE

–Y–

–B– –T–

D3 PL

0.25 (0.010) Y

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.680 0.700 17.28 17.78

B0.388 0.408 9.86 10.36

C0.175 0.195 4.45 4.95

D0.025 0.040 0.64 1.01

E0.340 0.355 8.64 9.01

F0.140 0.150 3.56 3.81

G0.100 BSC 2.54 BSC

H0.110 0.155 2.80 3.93

J0.018 0.028 0.46 0.71

K0.500 0.550 12.70 13.97

L0.045 0.070 1.15 1.77

N0.049 ––– 1.25 –––

P0.270 0.290 6.86 7.36

Q0.480 0.500 12.20 12.70

R0.090 0.120 2.29 3.04

S0.105 0.115 2.67 2.92

Z0.070 0.090 1.78 2.28

T2500DFP

4 Motorola Thyristor Device Data

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specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola

data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”

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