5-1
Semiconductor
Features
• 2.8A and 3.3A, 350V and 400V
•r
DS(ON) = 1.8Ω and 2.5Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17404.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER PACKAGE BRAND
IRF320 TO-204AA IRF320
IRF321 TO-204AA IRF321
IRF322 TO-204AA IRF322
IRF323 TO-204AA IRF323
NOTE: When ordering, use the entire part number.
D
S
G
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
July 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998 File Number 1569.3
IRF320, IRF321,
IRF322, IRF323
2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm,
N-Channel Power MOSFETs
5-2
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF320 IRF321 IRF322 IRF323 UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS 400 350 400 350 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR 400 350 400 350 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID3.3
2.1 3.3
2.1 2.8
1.8 2.8
1.8 A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM 13 13 11 11 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .PD50 50 50 50 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 0.4 0.4 0.4 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . .EAS 190 190 190 190 mJ
Operating and Storage Temperature . . . . . . . . . . . .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See TB334. . . . . . . . . . . . . . . Tpkg 300
260 300
260 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10)
IRF320, IRF322 400 - - V
IRF321, IRF323 350 - - V
Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V
TJ = 125oC- - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
(Figure 7)
IRF320, IRF321 3.3 - - A
IRF322, IRF323 2.8 - - A
Gate to Source Leakage Current IGSS VGS = ±20V ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 1.8A, VGS = 10V, (Figures 8, 9)
IRF320, IRF321 - 1.5 1.8 Ω
IRF322, IRF323 - 1.8 2.5 Ω
Forward Transconductance (Note 2) gfs VDS ≥ 10V, ID = 2.0A, (Figure 12) 1.7 2.7 - S
Turn-On Delay Time td(ON) VDD = 200V, ID≈ 3.3A, RG = 18Ω, RL = 60Ω,
VGS = 10V, (Figures 17, 18)
MOSFET Switching Times are Essentially
Independent of Operating Temperature
-1015ns
Rise Time tr-1420ns
Turn-Off Delay Time td(OFF) -3045ns
Fall Time tf-1320ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-1220nC
Gate to Source Charge Qgs -4-nC
Gate to Drain “Miller” Charge Qgd -8-nC
IRF320, IRF321, IRF322, IRF323
5-3
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz
(Figure 11) - 450 - pF
Output Capacitance COSS - 100 - pF
Reverse Transfer Capacitance CRSS -20- pF
Internal Drain Inductance LDMeasured Between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances
- 5.0 - nH
Internal Source Inductance LSMeasured from the
Source Lead, 6mm
(0.25in) From the
Flange and the Source
Bonding Pad
- 12.5 - nH
Thermal Resistance Junction to Case RθJC - - 2.5 oC/W
Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 30 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
- - 3.3 A
Pulse Source to Drain Current
(Note 3) ISDM - - 13 A
Source to Drain Diode Voltage (Note 2) VSD TC = 25oC, ISD = 3.3A, VGS = 0V, (Figure 13) - - 1.8 V
Reverse Recovery Time trr TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs 120 270 600 ns
Reverse Recovery Charge QRR TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs 0.64 1.4 3.0 µC
NOTES:
2. Pulse test: pulse width ≤300µs, duty cycle ≤2%.
3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 31mH, RG = 25Ω, peak IAS = 3.3A. See Figures 15, 16.
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
LD
LS
D
S
G
D
S
G
IRF320, IRF321, IRF322, IRF323
5-4
Typical Performance Curves
Unless Otherwise Specified
FIGURE 1. NORMALIZED PO WER DISSIPA TION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
TC, CASE TEMPERATURE (oC)
50 75 100 15025
5
4
3
0
2
ID, DRAIN CURRENT (A)
IRF320, IRF321
1
IRF322, IRF323
125
SINGLE PULSE
ZθJC, TRANSIENT
PDM
t1t2
10
1
0.1
0.01 10-2
10-5 10-4 10-3 0.1 1 10
t1, RECTANGULAR PULSE DURATION (s)
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ= PDM x ZθJC + TC
THERMAL IMPEDANCE (oC/W)
0.01
0.02
0.05
0.1
0.2
0.5
100
10
1
10001 10 100
OPERATION IN THIS
AREA IS LIMITED
BY rDS(ON)
0.1
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
TC = 25oC
IRF321, 3
IFR320, 1
IRF322, 3
IFR320, 1
IRF322, 3
IRF320, 2
TJ= MAX RATED
SINGLE PULSE
10µs
100µs
1ms
10ms
DC
VDS, DRAIN TO SOURCE VOLTAGE (V)
40 80 1200 200
5
4
3
0
2
ID, DRAIN CURRENT (A)
10V 6.0V
VGS = 5.0V
5.5V
4.5V
80µs PULSE TEST
1
4.0V
160
IRF320, IRF321, IRF322, IRF323
5-5
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
FIGURE 8. DRAIN T O SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
FIGURE 10. NORMALIZED DRAIN T O SOURCE BREAKDO WN
VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
5
4
3
0
2
36912015
V
GS = 5.0V
4.5V
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
5.5V
6.0V
10V
1
80µs PULSE TEST
4.0V
10
0.01 24 68010
I
D(ON), ON-STATE DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.1
1
VDS ≥50V
80µs PULSE TEST
DUTY CYCLE ≤ 2%
150oC25oC
ID, DRAIN CURRENT (A)
36912015
10.0
8.0
6.0
0
4.0
rDS(ON), DRAIN TO SOURCE
VGS = 20V
2.0
VGS = 10V
ON RESISTANCE (Ω)
3.0
1.8
0.6
0 60 160-60 TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
ID = 3.3A
2.4
1.2
0-40 -20 20 40 80 100 140120
VGS = 10V
ON RESISTANCE
1.25
1.05
0.85
0 60 160-60 TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
ID = 250µA
1.15
0.95
0.75 -40 -20 20 40 80 100 140120
BREAKDOWN VOLTAGE
VDS, DRAIN TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
1000
800
600
400
200
0
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
CISS
COSS
CRSS
110 100
IRF320, IRF321, IRF322, IRF323
5-6
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
Unless Otherwise Specified (Continued)
ID, DRAIN CURRENT (A)
123405
5
4
3
0
2
g
fs, TRANSCONDUCTANCE (S)
PULSE DURATION = 80µs
1
150oC
25oC
TJ = 150oC
TJ = 25oC
ISD, SOURCE TO DRAIN CURRENT (A)
VSD, SOURCE TO DRAIN VOLTAGE (V)
100
10
1
0.1 0 0.4 0.8 1.2 1.6 2.0
PULSE DURATION = 80µs
Qg(TOT), TOTAL GATE CHARGE (nC)
4 8 12 16020
20
16
12
0
8
VGS, GATE TO SOURCE VOLTAGE (V)
VDS = 320V
4
VDS = 200V
VDS = 80V
ID = 3.3A
IRF320, IRF321, IRF322, IRF323
5-7
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUITS FIGURE 20. GATE CHARGE WAVEFORMS
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
IG(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
IRF320, IRF321, IRF322, IRF323
