Advanced Power P-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Simple Drive Requirement BVDSS -200V
▼ Fast Switching Characteristic RDS(ON) 680mΩ
▼ RoHS Compliant & Halogen-Free ID-8A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TC=25℃A
ID@TC=100℃A
IDM A
PD@TC=25℃W
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Units
Rthj-c Maximum Thermal Resistance, Junction-case 1.3 ℃/W
Rthj-a 62.5 ℃/W
Data and specifications subject to change without notice
96
-55 to 150
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, VGS @ 10V
Total Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range -55 to 150
Total Power Dissipation3
Continuous Drain Current, VGS @ 10V -5
Pulsed Drain Current1-30
+20
-8
2
Halogen-Free Product
AP9120AGH-HF
Rating
-200
Maximum Thermal Resistance, Junction-ambient (PCB mount)3
201107121
1
Thermal Data Parameter
G
D
S
GDSTO-252(H)
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such
as DC/DC converters.
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
AP9120AGH-H
F
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -200 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=-10V, ID=-4A - - 680 mΩ
VGS=-4.5V, ID=-2A - - 1000 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA -1 - -3 V
gfs Forward Transconductance VDS=-10V, ID=-5A - 7.8 - S
IDSS Drain-Source Leakage Current VDS=-160V, VGS=0V - - -25 uA
IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA
QgTotal Gate Charge ID=-5A - 39 62 nC
Qgs Gate-Source Charge VDS=-160V - 3.3 - nC
Qgd Gate-Drain ("Miller") Charge VGS=-10V - 14.5 - nC
td(on) Turn-on Delay Time VDS=-100V - 9 - ns
trRise Time ID=-5A - 14 - ns
td(off) Turn-off Delay Time RG=10Ω-70-ns
tfFall Time VGS=-10V - 40 - ns
Ciss Input Capacitance VGS=0V - 1100 1760 pF
Coss Output Capacitance VDS=-25V - 185 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 55 - pF
RgGate Resistance f=1.0MHz - 3.5 7 Ω
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=-5A, VGS=0V - - -1.5 V
trr Reverse Recovery Time IS=-5A, VGS=0V, - 170 - ns
Qrr Reverse Recovery Charge dI/dt=-100A/µs - 1.45 - uC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3.Surface mounted on 1 in2 copper pad of FR4 board
2
AP9120AGH-H
F
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
0
4
8
12
16
20
24
28
0 10203040
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=25 oC
-10V
-7.0V
-6.0V
-5.0V
VG= -4.0V
0
4
8
12
16
20
0 10203040
-VDS , Drain-to-Source Voltage (V)
-ID , Drain Current (A)
TC=150oC-10V
-8.0V
-7.0V
-6.0V
VG= -5.0V
460
480
500
520
540
560
580
246810
-VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
I
D=-2A
TC=25
℃
0.4
0.9
1.4
1.9
2.4
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
I
D=-4 A
VG=-10V
0.3
0.7
1.1
1.5
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized -VGS(th) (V)
0
1
10
0 0.2 0.4 0.6 0.8 1 1.2
-VSD , Source-to-Drain Voltage (V)
-IS(A)
Tj=25 oCTj=150 oC
I
D=-250uA
AP9120AGH-H
F
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics Fig 12. Maximum Continuous Drain Current
v.s. Case Temperature
4
0.1
1
10
100
1 10 100 1000
-VDS , Drain-to-Source Voltage (V)
-ID (A)
100us
1ms
10ms
100ms
DC
TC=25oC
Single Pulse
0
2
4
6
8
10
12
0 1020304050
QG , Total Gate Charge (nC)
-VGS , Gate to Source Voltage (V)
I
D= -5A
VDS = -160V
0
400
800
1200
1600
2000
1 5 9 1317212529
-VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthjc)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthjc + TC
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
Operation in this area
limited by RDS(ON)
0
2
4
6
8
10
02468
-VGS , Gate-to-Source Voltage (V)
-ID , Drain Current (A)
Tj=150oC
Tj=25oC
VDS = -5V
0
2
4
6
8
10
25 50 75 100 125 150
TC , Case Temperature ( oC )
-ID , Drain Current (A)
