BL Galaxy Electrical Production specification
NPN General Purpose Amplifier MMBT2222A
Document number: BL/SSSTC071 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0 75 V
Collector-emitter breakdown
voltage
V(BR)CEO IC=10mA IB=0 B40 V
Emitter-base breakdown voltage V(BR)EBO IE=10μA IC=0 6 V
Collector cut-off current ICBO VCB=70V IE=0 0.1
μA
Collector cut-off current ICEO VCE=60V IBE(off)=0 0.1
μA
Emitter cut-off current IEBO VEB=3V IC=0 0.1
μA
VCE=10V IC=150mA 100 300
VCE=10V IC=0.1mA 40
DC current gain hFE
VCE=10V IC=500mA 42
Collector-emitter saturation
voltage
VCE(sat) IC=500mA IB=50mA B
IC=150mA IB=15mA B
0.6
0.3
V
Base-emitter saturation voltage VBE(sat) IC=500mA IB=50mA B 1.2 V
Transition frequency fTVCE=20V IC=20mA
f=100MHz
300 MHz
Delay time td 10 ns
Rise time tr
Vcc=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA 25 ns
Storage time ts 225 ns
Fall time tf
VCC=30V, IC=150mA
IB1=-IB2=15mA 60 ns