2N7002 Transistors
N-Channel Enhancement MOSFET
Military/High-RelN
V(BR)DSS (V)60
V(BR)GSS (V)40
I(D) Max. (A)115m
I(DM) Max. (A) Pulsed I(D)
@Temp (øC)
IDM Max (@25øC Amb)800m
@Pulse Width (s) (Condition)
Absolute Max. Power Diss. (W)200m
Minimum Operating Temp (øC)-55
Maximum Operating Temp (øC)150
Thermal Resistance Junc-Case200
Thermal Resistance Junc-Amb.350
V(GS)th Max. (V)2.5
V(GS)th (V) (Min)1.0
@(VDS) (V) (Test Condition)20
@I(D) (A) (Test Condition)250u
I(DSS) Max. (A)1.0u
@V(DS) (V) (Test Condition)60
@Temp (øC) (Test Condition)25
I(GSS) Max. (A)100n
@V(GS) (V) (Test Condition)20
r(DS)on Max. (Ohms)7.5
@V(GS) (V) (Test Condition)5.0
@I(D) (A) (Test Condition)50m
g(fs) Min. (S) Trans. conduct.80m
g(fs) Max; (S) Trans. conduct;
@V(DS) (V) (Test Condition)25
@I(D) (A) (Test Condition)500m
C(iss) Max. (F)50p
@V(DS) (V) (Test Condition)25
@V(GS) (V) (Test Condition)0.0
@Freq. (Hz) (Test Condition)1.0M
td(on) Max (s) On time delay
t(r) Max. (s) Rise time
t(d)off Max. (s) Off time
t(f) Max. (s) Fall time.
Package StyleTO-236AB
Mounting StyleS
Pinout Equivalence Code3-8
Ckt. (Pinout) NumberTR00300008
Description