LM6132AIMXNOPB - NATIONAL SEMICONDUCTOR

LM611

LM611 Operational Amplifier and Adjustable Reference

Literature Number: SNOSC08B

LM611

Operational Amplifier and Adjustable Reference

General Description

The LM611 consists of a single-supply op-amp and a pro-

grammable voltage reference in one space saving 8-pin

package. The op-amp out-performs most single-supply op-

amps by providing higher speed and bandwidth along with

low supply current. This device was specifically designed to

lower cost and board space requirements in transducer, test,

measurement and data acquisition systems.

Combining a stable voltage reference with a wide output

swing op-amp makes the LM611 ideal for single supply

transducers, signal conditioning and bridge driving where

large common-mode signals are common. The voltage ref-

erence consists of a reliable band-gap design that maintains

low dynamic output impedance (1Ωtypical), excellent initial

tolerance (0.6%), and the ability to be programmed from

1.2V to 6.3V via two external resistors. The voltage refer-

ence is very stable even when driving large capacitive loads,

as are commonly encountered in CMOS data acquisition

systems.

As a member of National’s Super-Block™family, the LM611

is a space-saving monolithic alternative to a multi-chip solu-

tion, offering a high level of integration without sacrificing

performance.

Features

OP AMP

nLow operating current: 300 µA (op amp)

nWide supply voltage range: 4V to 36V

nWide common-mode range: V

−

to (V

−1.8V)

nWide differential input voltage: ±36V

nAvailable in low cost 8-pin DIP

nAvailable in plastic package rated for Military

Temperature Range Operation

REFERENCE

nAdjustable output voltage: 1.2V to 6.3V

nTight initial tolerance available: ±0.6%

nWide operating current range: 17 µA to 20 mA

nReference floats above ground

nTolerant of load capacitance

Applications

nTransducer bridge driver

nProcess and Mass Flow Control systems

nPower supply voltage monitor

nBuffered voltage references for A/D’s

Connection Diagrams

00922101

00922102

Super-Block™is a trademark of National Semiconductor Corporation.

August 2000

LM611 Operational Amplifier and Adjustable Reference

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,

please contact the National Semiconductor Sales Office/

Distributors for availability and specifications.

Voltage on Any Pins Except V

(referred to V

−

pin) 36V (Max)

(Note 2) −0.3V (Min)

Current through Any Input Pin

and

Pin ±20 mA

Differential Input Voltage

Military and Industrial ±36V

Commercial ±32V

Storage Temperature Range −65˚C≤T

≤+150˚C

Maximum Junction Temperature 150˚C

Thermal Resistance, Junction-to-Ambient (Note 3)

N Package 100˚C/W

M Package 150˚C/W

Soldering Information Soldering (10 seconds)

N Package 260˚C

M Package 220˚C

ESD Tolerance (Note 4) ±1kV

Operating Temperature Range

LM611AI, LM611I, LM611BI −40˚C≤T

≤+85˚C

LM611AM, LM611M −55˚C≤T

≤+125˚C

LM611C 0˚C≤T

≤70˚C

Electrical Characteristics

These specifications apply for V

−

= GND = 0V, V

= 5V, V

OUT

= 2.5V, I

= 100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

= 25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM611M

LM611AM LM611BI

Symbol Parameter Conditions Typical LM611AI LM611I Units

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

Total Supply Current R

LOAD

=∞, 210 300 350 µA max

4V ≤V

≤36V (32V for LM611C) 221 320 370 µA max

Supply Voltage Range 2.2 2.8 2.8 V min

2.9 3 3 V min

46 36 32 V max

43 36 32 V max

OPERATIONAL AMPLIFIER

OS1

Over Supply 4V ≤V

≤36V 1.5 3.5 5.0 mV max

(4V ≤V

≤32V for LM611C) 2.0 6.0 7.0 mV max

OS2

Over V

= 0V through V

= 1.0 3.5 5.0 mV max

− 1.8V), V

= 30V, V

−

=0V 1.5 6.0 7.0 mV max

Average V

Drift (Note 6) 15 µV/˚C

max

Input Bias Current 10 25 35 nA max

11 30 40 nA max

Input Offset Current 0.2 4 4 nA max

0.3 5 5 nA max

Average Offset Drift

Current 4pA/˚C

Input Resistance Differential 1800 MΩ

Common-Mode 3800 MΩ

Input Capacitance Common-Mode 5.7 pF

Voltage Noise f = 100 Hz,

Input Referred

Current Noise f = 100 Hz,

Input Referred

LM611

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Electrical Characteristics (Continued)

These specifications apply for V

−

= GND = 0V, V

= 5V, V

OUT

= 2.5V, I

= 100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

= 25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM611M

LM611AM LM611BI

Symbol Parameter Conditions Typical LM611AI LM611I Units

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

OPERATIONAL AMPLIFIER

CMRR Common-Mode V

= 30V, 0V ≤V

≤(V

− 1.8V) 95 80 75 dB min

Rejection-Ratio CMRR = 20 log (∆V

/∆V

)90 75 70 dB min

PSRR Power Supply 4V ≤V

≤30V, V

/2, 110 80 75 dB min

Rejection-Ratio PSRR = 20 log (∆V

/∆V

)100 75 70 dB min

Open Loop R

=10kΩto GND, V

= 30V, 500 100 94 V/mV

Voltage Gain 5V ≤V

OUT

≤25V 50 40 40 min

SR Slew Rate V

= 30V (Note 7) 0.70 0.55 0.50 V/µs

0.65 0.45 0.45

GBW Gain Bandwidth C

= 50 pF 0.80 MHz

0.50

Output Voltage R

=10kΩto GND V

− 1.4 V

− 1.7 V

− 1.8 V min

Swing High V

= 36V (32V for LM611C) V

− 1.6 V

− 1.9 V

− 1.9 V min

Output Voltage R

=10kΩto V

−

+ 0.8 V

−

+ 0.9 V

−

+ 0.95 V max

Swing Low V

= 36V (32V for LM611C) V

−

+ 0.9 V

−

+ 1.0 V

−

+ 1.0 V max

OUT

Output Source V

OUT

= 2.5V, V

+IN

= 0V, 25 20 16 mA min

Current V

−IN

= −0.3V 15 13 13 mA min

SINK

Output Sink V

OUT

= 1.6V, V

+IN

= 0V, 17 14 13 mA min

Current V

−IN

= 0.3V 98 8mA min

SHORT

Short Circuit Current V

OUT

= 0V, V

+IN

= 3V, 30 50 50 mA max

−IN

= 2V, Source 40 60 60 mA max

OUT

= 5V, V

+IN

= 2V, 30 60 70 mA max

−IN

= 3V, Sink 32 80 90 mA max

VOLTAGE REFERENCE

Reference Voltage (Note 8) 1.244 1.2365 1.2191 V min

1.2515 1.2689 V max

(±0.6%) (±2.0%)

Average Temperature

Drift

(Note 9)

10 80 150

PPM/˚C

max

Hysteresis Hyst = (Vro' − Vro)/∆T

(Note 10)

3.2 µV/˚C

Change V

R(100 µA)

−V

R(17 µA)

0.05 1 1 mV max

with Current 0.1 1.1 1.1 mV max

R(10 mA)

−V

R(100 µA)

1.5 5 5 mV max

(Note 11) 2.0 5.5 5.5 mV max

R Resistance ∆V

R(10→0.1 mA)

/9.9 mA 0.2 0.56 0.56 Ωmax

∆V

R(100→17 µA)

/83 µA 0.6 13 13 Ωmax

Change with V

R(Vro = Vr)

−V

R(Vro = 6.3V)

2.5 7 7 mV max

High V

(5.06V between Anode and

FEEDBACK)

2.8 10 10 mV max

LM611

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Electrical Characteristics (Continued)

These specifications apply for V

−

= GND = 0V, V

= 5V, V

OUT

= 2.5V, I

= 100 µA, FEEDBACK pin shorted to GND,

unless otherwise specified. Limits in standard typeface are for T

= 25˚C; limits in boldface type apply over the Operating

Temperature Range.

LM611M

LM611AM LM611BI

Symbol Parameter Conditions Typical LM611AI LM611I Units

(Note 5) Limits LM611C

(Note 6) Limits

(Note 6)

VOLTAGE REFERENCE

Change with V

R(V+ = 5V)

−V

R(V+ = 36V)

0.1 1.2 1.2 mV max

Change (V

= 32V for LM611C) 0.1 1.3 1.3 mV max

R(V+ = 5V)

−V

R(V+ = 3V)

0.01 1 1 mV max

0.01 1.5 1.5 mV max

Change with V

max, ∆V

ANODE

Change (@V

ANODE

−

=GND)−V

0.7 1.5 1.6 mV max

(@V

ANODE

− 1.0V) 3.3 3.0 3.0 mV max

FEEDBACK Bias I

ANODE

≤V

≤5.06V 22 35 50 nA max

Current 29 40 55 nA max

Noise 10 Hz to 10,000 Hz, V

30 µV

RMS

Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the

device beyond its rated operating conditions.

Note 2: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below

V−, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined

and unpredictable when any parasitic diode or transistor is conducting.

Note 3: Junction temperature may be calculated using TJ=T

A+P

DθJA. The given thermal resistance is worst-case for packages in sockets in still air. For packages

soldered to copper-clad board with dissipation from one op amp or reference output transistor, nominal θJA is 90˚C/W for the N package and 135˚C/W for the M

package.

Note 4: Human body model, 100 pF discharged through a 1.5 kΩresistor.

Note 5: Typical values in standard typeface are for TJ= 25˚C; values in boldface type apply for the full operating temperature range. These values represent the

most likely parametric norm.

Note 6: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold face type).

Note 7: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage

transition is sampled at 10V and 20V. For falling slew rate, the input voltage is driven from 25V to 5V, and output voltage transition is sampled at 20V and 10V.

Note 8: VRis the cathode-feedback voltage, nominally 1.244V.

Note 9: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is

106•∆VR/(VR[25˚C]•∆TJ), where ∆VRis the lowest value subtracted from the highest, VR[25˚C] is the value at 25˚C, and ∆TJis the temperature range. This parameter

is guaranteed by design and sample testing.

Note 10: Hysteresis is the change in VRcaused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the

hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.

Note 11: Low contact resistance is required for accurate measurement.

Note 12: Military RETS 611AMX electrical test specification is available on request. The LM611AMJ/883 can also be procured as a Standard Military Drawing.

LM611

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Typical Performance Characteristics (Reference)

= 25˚C, FEEDBACK pin shorted to V

−

= 0V, unless

otherwise noted

Reference Voltage vs Temp

on 5 Representative Units Reference Voltage Drift

00922133 00922134

Accelerated Reference

Voltage Drift vs Time

Reference Voltage vs

Current and Temperature

00922135 00922136

Reference Voltage vs

Current and Temperature

Reference Voltage vs

Reference Current

00922137 00922138

LM611

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Typical Performance Characteristics (Reference) T

= 25˚C, FEEDBACK pin shorted to V

−

0V, unless otherwise noted (Continued)

Reference Voltage vs

Reference Current

Reference AC

Stability Range

00922139 00922140

Feedback Current vs

Feedback-to-Anode Voltage

Feedback Current vs

Feedback-to-Anode Voltage

00922141 00922142

Reference Noise Voltage

vs Frequency

Reference Small-Signal

Resistance vs Frequency

00922143 00922144

LM611

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Typical Performance Characteristics (Reference) T

= 25˚C, FEEDBACK pin shorted to V

−

0V, unless otherwise noted (Continued)

Reference Power-Up Time

Reference Voltage with

Feedback Voltage Step

00922145 00922146

Reference Voltage with

100∼12 µA Current Step

Reference Step Response

for 100 µA ∼10 mA

Current Step

00922147 00922148

Reference Voltage Change

with Supply Voltage Step

00922149

LM611

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Typical Performance Characteristics (Op Amps)

= 5V, V

−

= GND = 0V, V

/2, V

OUT

/2, T

25˚C, unless otherwise noted

Input Common-Mode Voltage

Range vs Temperature

vs Junction

Temperature

00922150 00922151

Input Bias Current vs

Common-Mode Voltage

Reference Change vs

Common-Mode Voltage

00922152

00922153

Large-Signal

Step Response

Output Voltage Swing

vs Temp. and Current

00922154 00922155

LM611

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Typical Performance Characteristics (Op Amps) V

= 5V, V

−

= GND = 0V, V

/2, V

OUT

/2, T

= 25˚C, unless otherwise noted (Continued)

Output Source Current vs

Output Voltage and Temp.

Output Sink Current vs

Output Voltage

00922156 00922157

Output Swing,

Large Signal

Output Impedance vs

Frequency and Gain

00922158 00922159

Small Signal Pulse

Response vs Temp.

Small-Signal Pulse

Response vs Load

00922160 00922161

LM611

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Typical Performance Characteristics (Op Amps) V

= 5V, V

−

= GND = 0V, V

/2, V

OUT

/2, T

= 25˚C, unless otherwise noted (Continued)

Op Amp Voltage Noise

vs Frequency

Op Amp Current Noise

vs Frequency

00922162 00922163

Small-Signal Voltage Gain vs

Frequency and Temperature

Small-Signal Voltage Gain

vs Frequency and Load

00922164 00922165

Follower Small-Signal

Frequency Response

Common-Mode Input

Voltage Rejection Ratio

00922166 00922167

LM611

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Typical Performance Characteristics (Op Amps) V

= 5V, V

−

= GND = 0V, V

/2, V

OUT

/2, T

= 25˚C, unless otherwise noted (Continued)

Power Supply Current vs

Power Supply Voltage

Positive Power Supply

Voltage Rejection Ratio

00922168 00922169

Negative Power Supply

Voltage Rejection Ratio Slew Rate vs Temperature

00922170 00922171

Input Offset Current vs

Junction Temperature

Input Bias Current vs

Junction Temperature

00922172 00922173

LM611

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Typical Performance Distributions

Average V

Drift

Military Temperature Range

Average V

Drift

Industrial Temperature Range

00922174 00922175

Average V

Drift

Commercial Temperature

Range

Average I

Drift

Military Temperature Range

00922176 00922177

Average I

Drift

Industrial Temperature Range

Average I

Drift

Commercial Temperature Range

00922178 00922179

LM611

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Typical Performance Distributions (Continued)

Voltage Reference Broad-Band

Noise Distribution

Op Amp Voltage

Noise Distribution

00922180 00922181

Op Amp Current

Noise Distribution

00922182

Application Information

VOLTAGE REFERENCE

Reference Biasing

The voltage reference is of a shunt regulator topology that

models as a simple zener diode. With current I

flowing in the

‘forward’ direction there is the familiar diode transfer func-

tion. I

flowing in the reverse direction forces the reference

voltage to be developed from cathode to anode. The applied

voltage to the cathode may range from a diode drop below

−

to the reference voltage or to the avalanche voltage of the

parallel protection diode, nominally 7V. A 6.3V reference with

V+ = 3V is allowed.

The reference equivalent circuit reveals how V

is held at the

constant 1.2V by feedback, and how the FEEDBACK pin

passes little current.

To generate the required reverse current, typically a resistor

is connected from a supply voltage higher than the reference

voltage. Varying that voltage, and so varying I

, has small

effect with the equivalent series resistance of less than an

ohm at the higher currents. Alternatively, an active current

source, such as the LM134 series, may generate I

00922114

FIGURE 1. Voltages Associated with Reference

(Current Source I

is External)

00922115

FIGURE 2. Reference Equivalent Circuit

LM611

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Application Information (Continued)

Capacitors in parallel with the reference are allowed. See the

Reference AC Stability Range curve for capacitance

values — from 20 µA to 3 mA any capacitor value is stable.

With the reference’s wide stability range with resistive and

capacitive loads, a wide range of RC filter values will perform

noise filtering.

Adjustable Reference

The FEEDBACK pin allows the reference output voltage,

, to vary from 1.24V to 6.3V. The reference attempts to

hold V

at 1.24V. If V

is above 1.24V, the reference will

conduct current from Cathode to Anode; FEEDBACK current

always remains low. If FEEDBACK is connected to Anode,

then V

= 1.24V. For higher voltages FEEDBACK is

held at a constant voltage above Anode — say 3.76V for V

= 5V. Connecting a resistor across the constant V

generates

a current I=R1/V

flowing from Cathode into FEEDBACK

node. A Thevenin equivalent 3.76V is generated from FEED-

BACK to Anode with R2=3.76/I. Keep I greater than one

thousand times larger than FEEDBACK bias current for

<0.1% error — I≥32 µA for the military grade over the military

temperature range (I≥5.5 µA for a 1% untrimmed error for a

commercial part.)

00922118

R1 = Vr/I = 1.24/32µ = 39k

R2 = R1 {(Vro/Vr) − 1} = 39k {(5/1.24) − 1)} = 118k

Understanding that V

is fixed and that voltage sources,

resistors, and capacitors may be tied to the FEEDBACK pin,

a range of V

temperature coefficients may be synthesized.

Connecting a resistor across Cathode-to-FEEDBACK cre-

ates a 0 TC current source, but a range of TCs may be

synthesized.

00922116

FIGURE 3. 1.2V Reference

00922117

FIGURE 4. Thevenin Equivalent of

Reference with 5V Output

FIGURE 5. Resistors R1 and R2 Program

Reference Output Voltage to be 5V

00922119

FIGURE 6. Output Voltage has Negative Temperature

Coefficient (TC) if R2 has Negative TC

00922120

FIGURE 7. Output Voltage has Positive TC

if R1 has Negative TC

00922121

FIGURE 8. Diode in Series with R1 Causes

Voltage Across R1 and R2 to be Proportional

to Absolute Temperature (PTAT)

LM611

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Application Information (Continued)

00922122

I = Vr/R1 = 1.24/R1

Hysteresis

The reference voltage depends, slightly, on the thermal his-

tory of the die. Competitive micro-power products

vary — always check the data sheet for any given device. Do

not assume that no specification means no hysteresis.

OPERATIONAL AMPLIFIER

The amp or the reference may be biased in any way with no

effect on the other, except when a substrate diode conducts

(see Guaranteed Electrical Characteristics Note 1). The amp

may have inputs outside the common-mode range, may be

operated as a comparator, or have all terminals floating with

no effect on the reference (tying inverting input to output and

non-inverting input to V

−

on unused amp is preferred).

Choosing operating points that cause oscillation, such as

driving too large a capacitive load, is best avoided.

Op Amp Output Stage

The op amp, like the LM124 series, has a flexible and

relatively wide-swing output stage. There are simple rules to

optimize output swing, reduce cross-over distortion, and op-

timize capacitive drive capability:

1. Output Swing: Unloaded, the 42 µA pull-down will bring

the output within 300 mV of V

−

over the military tempera-

ture range. If more than 42 µA is required, a resistor from

output to V

−

will help. Swing across any load may be

improved slightly if the load can be tied to V

, at the cost

of poorer sinking open-loop voltage gain.

2. Cross-over Distortion: The LM611 has lower cross-over

distortion (a 1 V

deadband versus 3 V

for the

LM124), and increased slew rate as shown in the char-

acteristic curves. A resistor pull-up or pull-down will force

class-A operation with only the PNP or NPN output

transistor conducting, eliminating cross-over distortion.

3. Capacitive Drive: Limited by the output pole caused by

the output resistance driving capacitive loads, a pull-

down resistor conducting 1 mA or more reduces the

output stage NPN r

until the output resistance is that of

the current limit 25Ω. 200 pF may then be driven without

oscillation.

Op Amp Input Stage

The lateral PNP input transistors, unlike those of most op

amps, have BV

EBO

equal to the absolute maximum supply

voltage. Also, they have no diode clamps to the positive

supply nor across the inputs. These features make the in-

puts look like high impedances to input sources producing

large differential and common-mode voltages.

FIGURE 9. Current Source is Programmed by R1

00922123

FIGURE 10. Proportional-to-Absolute-

Temperature Current Source

00922124

FIGURE 11. Negative −TC Current Source

LM611

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Typical Applications

00922128

*10k must be low

t.c. trim pot.

FIGURE 12. Ultra Low Noise 10.00V Reference.

Total Output Noise is Typically 14 µV

RMS

Adjust the 10k pot for 10.000V.

00922130

FIGURE 13. Simple Low Quiescent Drain Voltage Regulator. Total Supply Current is approximately 320 µA when V

5V, and output has no load.

00922129

VOUT = (R1/R2 + 1) VREF.

R1, R2 should be 1% metal film.

R3 should be low t.c. trim pot.

FIGURE 14. Slow Rise-Time Upon Power-Up,

Adjustable Transducer Bridge Driver.

Rise-time is approximately 0.5 ms.

LM611

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Typical Applications (Continued)

00922131

FIGURE 15. Low Drop-Out Voltage Regulator Circuit. Drop out voltage is typically 0.2V.

00922132

FIGURE 16. Nulling Bridge Detection System. Adjust sensitivity via 400 kΩpot.

Null offset with R1, and bridge drive with the 10k pot.

LM611

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Simplified Schematic Diagrams

Op Amp

00922103

Reference Bias

00922191 00922192

Ordering Information

Reference

Tolerance & V

Temperature Range Package NSC

Drawing

Military Industrial Commercial

−55˚C≤T

≤+125˚C −40˚C≤T

≤+85˚C 0˚C≤T

≤+70˚C

±0.6% @

80 ppm/˚C max

= 3.5 mV max

LM611AMJ/883 (Note 12) — — 8-pin

ceramic DIP

J08A

±2.0% @

150 ppm/˚C max

=5mVmax

— LM611IM

LM611IMX

LM611CM

LM611CMX

14-pin Narrow

Surface Mount

M14A

LM611

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Physical Dimensions inches (millimeters)

unless otherwise noted

Hermetic Dual-In-Line Package (J)

Order Number LM611AMJ/883

NS Package Number J08A

Plastic Surface Mount Narrow Package (0.15) (M)

Order Number LM611CM, LM611CMX, LM611IM or LM611IMX

NS Package Number M14A

LM611

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Notes

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DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL

COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant

into the body, or (b) support or sustain life, and

whose failure to perform when properly used in

accordance with instructions for use provided in the

labeling, can be reasonably expected to result in a

significant injury to the user.

2. A critical component is any component of a life

support device or system whose failure to perform

can be reasonably expected to cause the failure of

the life support device or system, or to affect its

safety or effectiveness.

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National Semiconductor certifies that the products and packing materials meet the provisions of the Customer Products

Stewardship Specification (CSP-9-111C2) and the Banned Substances and Materials of Interest Specification

(CSP-9-111S2) and contain no ‘‘Banned Substances’’ as defined in CSP-9-111S2.

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LM611 Operational Amplifier and Adjustable Reference

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.

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