MMBT3904LP
Document number: DS31835 Rev. 4 - 2 1 of 5
www.diodes.com October 2011
© Diodes Incorporated
MMBT3904LP
40V NPN SURFACE MOUNT TRANSISTOR
Features
• Complementary PNP Type Available (MMBT3906LP)
• Ultra-Small Leadless Surface Mount Package
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.0008 grams (approximate)
Ordering Information (Note 3)
Product Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBT3904LP-7 1N 7 8mm 3,000
MMBT3904LP-7B 1N 7 8mm 10,000
Notes: 1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
1N = Product Type Marking Code
Top View
Device Schematic
Bottom View
X1-DFN1006-3
Device Symbol
C
E
B
C
E
B
MMBT3904LP-7 MMBT3904LP-7B
Top View
Bar Denotes Base
and Emitter Side
Top View
Dot Denotes
Collector Side
1N1N
MMBT3904LP
Document number: DS31835 Rev. 4 - 2 2 of 5
www.diodes.com October 2011
© Diodes Incorporated
MMBT3904LP
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Collector Current - Continuous (Note 4) IC 200 mA
Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 4) PD 250 mW
Thermal Resistance, Junction to Ambient (Note 4) R
θ
JA 500 °C/W
Operating and Storage and Temperature Range TJ, TSTG -55 to +150 °C
Notes: 4. Device mounted on FR-4 PCB pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our website at
http://www.diodes.com
1E-06 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 10,000
Fig . 1 Tran sient Thermal Res ponse
t , PULSE DURATION TIME (s)
1
0.001
0.01
0.1
1
r(t),
T
R
ANSIEN
T
T
H
E
R
MAL
R
ESIS
T
AN
C
E
T - T = P * R (t)
Duty Cycle, D = t /t
JA JA
12
θ
R (t) = r(t) *
θ
JA
R
R = 500°C/W
θ
θ
JA
JA
P(pk) t
1
t
2
D = 0.7
D = 0.5
D = 0.3
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0.9
D = 0.1
D = Single Pulse
1E-06 0.0001 0.01 1 100 10,000
Fig. 2 Single Pulse Maximum Power Dissipation
t , PULSE DURATION TIME (s)
1
1
10
100
1,000
P
(pk),
P
EAK
T
R
ANSIEN
T
P
O
WE
R
(W)
0.1
Single Pulse
T - T = P * R (t)
JA JA
θ
R (t) = r(t) *
θ
JA
R
R = 500°C/W
θ
θ
JA
JA
0
0.1
0.2
0.3
0.4
0 20 40 60 80 100 120 140 160
T , AMBIENT TEMPERA TURE ( C)
A
°
Fig . 3 Pow er D issipation vs. Ambien t Tem perature
P
,
P
O
WE
R
DI SS I
P
A
T
I
O
N
(W)
D
Note 4
MMBT3904LP
Document number: DS31835 Rev. 4 - 2 3 of 5
www.diodes.com October 2011
© Diodes Incorporated
MMBT3904LP
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic Symbol Min Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 60 ⎯ V IC = 10μA, IE = 0
Collector-Emitter Breakdown Voltage (Note 5) BVCEO 40 ⎯ V IC = 1.0mA, IB = 0
Emitter-Base Breakdown Voltage BVEBO 6.0 ⎯ V IE = 10μA, IC = 0
Collector Cutoff Current ICEX ⎯ 50 nA
VCE = 30V, VEB
(
OFF
)
= 3.0V
Base Cutoff Current IBL ⎯ 50 nA
VCE = 30V, VEB
(
OFF
)
= 3.0V
ON CHARACTERISTICS (Note 5)
DC Current Gain hFE
40
70
100
60
30
⎯
⎯
300
⎯
⎯
⎯
IC = 100µA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
Collector-Emitter Saturation Voltage VCE(sat) ⎯ 0.20
0.30 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
Base-Emitter Saturation Voltage VBE(sat) 0.65
⎯ 0.85
0.95 V IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
SMALL SIGNAL CHARACTERISTICS
Output Capacitance Cobo ⎯ 4.0 pF
VCB = 5.0V, f = 1.0MHz, IE = 0
Input Capacitance Cibo ⎯ 8.5 pF
VEB = 0.5V, f = 1.0MHz, IC = 0
Input Impedance hie 1.0 10 kΩ VCE = 10V, IC = 1.0mA,
f = 1.0kHz
Voltage Feedback Ratio hre 0.5 8.0 x 10-4
Small Signal Current Gain hfe 100 400 ⎯
Output Admittance hoe 1.0 40 μS
Current Gain-Bandwidth Product fT 300 ⎯ MHz VCE = 20V, IC = 10mA,
f = 100MHz
SWITCHING CHARACTERISTICS
Delay Time td ⎯ 35 ns
VCC = 3.0V, IC = 10mA,
VBE(off) = - 0.5V, IB1 = 1.0mA Rise Time t
r
⎯ 35 ns
Storage Time ts ⎯ 200 ns
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA Fall Time tf ⎯ 50 ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
0
0.02
0.04
0.06
0.08
0.10
0.12
0.14
012 345
V , COLLECTOR-EMITTER VOL TAGE (V)
CE
Fig. 4 Typical Collector Current
vs. Collector-Emitter Vo lt age
I,
C
O
LLE
C
T
O
R
C
U
R
R
E
N
T
(A)
C
I = 0.2mA
B
I = 0.4mA
B
I = 0.6mA
B
I = 0.8mA
B
I = 1.6mA
B
I = 1.2mA
B
I = 2mA
B
110100
I , COLLECTOR CURRENT (mA)
C
Fig. 5 T y pical DC Current Gain vs. Collector Current
0
100
200
300
400
h, D
C
C
U
R
R
EN
T
G
AIN
FE
T = -55°C
A
T = 25° C
A
T = 150° C
A
T = 125° C
A
T = 85° C
A
V = 1V
CE
50
150
250
350
MMBT3904LP
Document number: DS31835 Rev. 4 - 2 4 of 5
www.diodes.com October 2011
© Diodes Incorporated
MMBT3904LP
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 6 Typical Collector-Emitter Saturation V oltage
vs. Collector Current
0.01
0.1
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURA T ION
CE(SAT)
VOLT AGE (V)
T = -55°C
A
I/I = 10
CB
T = 25°C
A
T = 125°C
A
T = 150°C
A
T = 85°C
A
0.01
0.1
1
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SATURATION
CE(SAT)
VOLTAG E (V)
0.1 1 10 100
I , COLLECTOR CURRENT (mA)
C
Fig. 7 Ty pical Collector-Emitter Saturation V o ltage
vs. Collector Current
I/I = 20
CB
T = -55°C
A
T = 25°C
A
T = 150°C
A
T = 85°C
A
T = 125°C
A
110100
I , COLLECTOR CURRENT (mA)
C
Fig. 8 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
V , BASE -EM I
T
T
E
R
T
U
R
N
-
O
N
V
O
L
T
A
G
E (V)
BE(ON)
V = 5V
CE
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
T = 150°C
A
110100
I , COLLECTOR CURRENT (mA)
C
Fig. 9 T y pical Base-Emitter Saturation Vo lt age
vs. Collector Current
0.4
0.6
0.8
1.0
V , BASE-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N V
O
L
T
A
G
E (V)
BE(SAT)
T = 85°C
A
T = 25°C
A
T = -55°C
A
T = 125°C
A
T = 150°C
A
Gain = 10
0.5
0.7
0.9
1.1
0.3
Package Outline Dimensions
X1-DFN1006-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1 0 0.05 0.03
b1 0.10 0.20 0.15
b2 0.45 0.55 0.50
D 0.95 1.075 1.00
E 0.55 0.675 0.60
e ⎯ ⎯ 0.35
L1 0.20 0.30 0.25
L2 0.20 0.30 0.25
L3 ⎯ ⎯ 0.40
All Dimensions in mm
L2
A1
Eb2
L1L3
D
e
b1
A
MMBT3904LP
Document number: DS31835 Rev. 4 - 2 5 of 5
www.diodes.com October 2011
© Diodes Incorporated
MMBT3904LP
Suggested Pad Layout
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated p roducts for any unintended or una uthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign p atents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their pro ducts and an y
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
Dimensions Value (in mm)
Z 1.1
G1 0.3
G2 0.2
X 0.7
X1 0.25
Y 0.4
C 0.7
Y
C
G1
G2
X
X
1
Z
