2N3866
2N3866A
NPN SILICON
HIGH FREQUENCY TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N3866 and
2N3866A are Silicon NPN RF Transistors, mounted
in a hermetically sealed package, designed for high
frequency amplifier and oscillator applications.
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL UNITS
Collector-Base Voltage VCBO 55 V
Collector-Emitter Voltage VCEO 30 V
Emitter-Base Voltage VEBO 3.5 V
Continuous Collector Current IC 0.4 A
Continuous Base Current IB 2.0 A
Power Dissipation (TC=25°C) PD 5.0 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +200 °C
Thermal Resistance ΘJC 35 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICEO V
CE=28V 20 μA
ICEV V
CE=55V, VBE(OFF)=1.5V 0.1 mA
ICEV V
CE=30V, VBE(OFF)=1.5V, TC=200°C 5.0 mA
IEBO V
EB=3.5V 0.1 mA
BVCER I
C=5.0mA, RBE=10Ω 55 V
BVCBO I
C=500μA 55 V
BVCEO I
C=5.0mA 30 V
BVEBO I
E=100μA 3.5 V
VCE(SAT) I
C=100mA, IB=20mA 1.0 V
hFE V
CE=5.0V, IC=50mA (2N3866) 10 200
hFE V
CE=5.0V, IC=50mA (2N3866A) 25 200
hFE V
CE=5.0V, IC=360mA 5.0
fT V
CE=15V, IC=50mA, f=200MHz (2N3866) 500 MHz
fT V
CE=15V, IC=50mA, f=200MHz (2N3866A) 800 MHz
Cob V
CB=28V, IE=0, f=1.0MHz 3.0 pF
GPE V
CC=28V, Pout=1.0W, f=400MHz (Figure 1) 10 dB
η V
CC=28V, Pout=1.0W, f=400MHz (Figure 1) 45 %
TO-39 CASE
R2 (15-September 2010)
www.centralsemi.com
2N3866
2N3866A
NPN SILICON
HIGH FREQUENCY TRANSISTOR
TO-39 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING: FULL PART NUMBER
Figure 1. 400MHz Test Circuit
www.centralsemi.com
R2 (15-September 2010)
