MBT3904DW1T1 Dual General Purpose Transistor The MBT3904DW1T1 device is a spin-off of our popular SOT-23/SOT-323 three-leaded device. It is designed for general purpose amplifier applications and is housed in the SOT-363 six-leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low-power surface mount applications where board space is at a premium. * hFE, 100-300 * Low VCE(sat), 0.4 V * Simplifies Circuit Design * Reduces Board Space * Reduces Component Count * Available in 8 mm, 7-inch/3,000 Unit Tape and Reel * Device Marking: MBT3904DW1T1 = MA MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc IC 200 mAdc ESD HBM>16000, MM>2000 V Symbol Max Unit PD 150 mW RJA 833 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous Electrostatic Discharge http://onsemi.com 6 5 1 2 4 3 SOT-363/SC-88 CASE 419B STYLE 1 (3) (2) (1) Q1 Q2 (4) (5) (6) MBT3904DW1T1 ORDERING INFORMATION Device Package Shipping MBT3904DW1T1 SOT-363 3000 Units/Reel THERMAL CHARACTERISTICS Characteristic Total Package Dissipation(1) TA = 25C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum 1. recommended footprint. Semiconductor Components Industries, LLC, 2001 October, 2001 - Rev. 2 1 Publication Order Number: MBT3904DW1T1/D MBT3904DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max 40 - 60 - 6.0 - - 50 - 50 40 70 100 60 30 - - 300 - - - - 0.2 0.3 0.65 - 0.85 0.95 300 - - 4.0 - 8.0 Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) V(BR)CEO Collector-Base Breakdown Voltage (IC = 10 Adc, IE = 0) V(BR)CBO Emitter-Base Breakdown Voltage (IE = 10 Adc, IC = 0) V(BR)EBO Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) IBL Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX Vdc Vdc Vdc nAdc nAdc ON CHARACTERISTICS (2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) hFE Collector-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VCE(sat) Base-Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo 2. Pulse Test: Pulse Width 300 s; Duty Cycle 2.0%. http://onsemi.com 2 MHz pF pF MBT3904DW1T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre Small-Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe Noise Figure (VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k , f = 1.0 kHz) NF Min Max 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 - - 5.0 4.0 Unit k X 10-4 - mhos dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = -0.5 Vdc) td - 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr - 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts - 200 Fall Time (IB1 = IB2 = 1.0 mAdc) tf - 50 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 DUTY CYCLE = 2% 10 k -0.5 V t1 10 < t1 < 500 s +3 V 275 10 k Cs < 4 pF* 1N916 -9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit http://onsemi.com 3 ns +10.9 V 0 < 1 ns ns Cs < 4 pF* MBT3904DW1T1 TYPICAL TRANSIENT CHARACTERISTICS TJ = 25C TJ = 125C 10 5000 Q, CHARGE (pC) Cibo 3.0 Cobo 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 5.0 7.0 10 20 30 50 70 100 50 40 V 15 V 10 2.0 3.0 5.0 7.0 10 20 30 50 70 100 50 30 20 7 5 200 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise Time IC/IB = 10 IC/IB = 20 50 IC/IB = 10 30 20 7 5 50 70 100 200 IC/IB = 10 30 20 10 30 IC/IB = 20 100 70 50 7 5 20 VCC = 40 V IB1 = IB2 300 200 10 5.0 7.0 10 200 500 ts = ts - 1/8 tf IB1 = IB2 100 70 2.0 3.0 1.0 IC, COLLECTOR CURRENT (mA) 500 IC/IB = 20 100 70 10 2.0 V td @ VOB = 0 V VCC = 40 V IC/IB = 10 300 200 tr @ VCC = 3.0 V 30 20 200 500 t r, RISE TIME (ns) TIME (ns) 2.0 3.0 Figure 4. Charge Data IC/IB = 10 1.0 1.0 Figure 3. Capacitance 100 70 300 200 QA IC, COLLECTOR CURRENT (mA) 300 200 t s , STORAGE TIME (ns) 20 30 40 QT 300 200 REVERSE BIAS VOLTAGE (VOLTS) 500 1.0 1000 700 500 100 70 50 t f , FALL TIME (ns) CAPACITANCE (pF) 2000 5.0 7 5 VCC = 40 V IC/IB = 10 3000 7.0 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time http://onsemi.com 4 200 MBT3904DW1T1 TYPICAL AUDIO SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25C, Bandwidth = 1.0 Hz) 12 SOURCE RESISTANCE = 200 IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 A 4 2 0 0.1 SOURCE RESISTANCE = 500 IC = 100 A 0.2 0.4 1.0 2.0 f = 1.0 kHz 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 IC = 1.0 mA IC = 1.0 mA IC = 0.5 mA 10 IC = 50 A 8 IC = 100 A 6 4 2 4.0 10 20 40 0 100 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure 40 100 5.0 10 5.0 10 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25C) 100 hoe, OUTPUT ADMITTANCE ( mhos) h fe , CURRENT GAIN 300 200 100 70 50 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 50 20 10 5 2 1 10 0.1 0.2 Figure 11. Current Gain h ie , INPUT IMPEDANCE (k OHMS) 10 5.0 2.0 1.0 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 hre , VOLTAGE FEEDBACK RATIO (x 10 -4) Figure 12. Output Admittance 20 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 Figure 13. Input Impedance 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio http://onsemi.com 5 MBT3904DW1T1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125C VCE = 1.0 V +25C 1.0 0.7 -55C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 70 50 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25C 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 TJ = 25C VBE(sat) @ IC/IB =10 V, VOLTAGE (VOLTS) 1.0 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 VC FOR VCE(sat) 0 -55C TO +25C -0.5 -55C TO +25C -1.0 +25C TO +125C VB FOR VBE(sat) -1.5 0.2 0 +25C TO +125C 0.5 COEFFICIENT (mV/ C) 1.2 1.0 2.0 5.0 10 20 50 100 -2.0 200 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. "ON" Voltages Figure 18. Temperature Coefficients http://onsemi.com 6 180 200 MBT3904DW1T1 INFORMATION FOR USING THE SOT-363 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE EEE 0.65 mm 0.65 mm 0.4 mm (min) 0.5 mm (min) 1.9 mm SOT-363 SOT-363 POWER DISSIPATION SOLDERING PRECAUTIONS The power dissipation of the SOT-363 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA. Using the values provided on the data sheet for the SOT-363 package, PD can be calculated as follows: PD = The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150C - 25C 833C/W = 150 milliwatts The 833C/W for the SOT-363 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT-363 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. http://onsemi.com 7 MBT3904DW1T1 PACKAGE DIMENSIONS SOT-363/SC-88 CASE 419B-01 ISSUE G A G V 6 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 DIM A B C D G H J K N S V -B- S 1 2 3 D 6 PL 0.2 (0.008) M B M N J C INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 0.012 0.016 STYLE 1: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 0.30 0.40 EMITTER 2 BASE 2 COLLECTOR 1 EMITTER 1 BASE 1 COLLECTOR 2 K H Thermal Clad is a trademark of the Bergquist Company. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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