MBT3904DW1T1-D - ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

October, 2001 – Rev. 2 1Publication Order Number:

MBT3904DW1T1/D

MBT3904DW1T1

Dual General Purpose

Transistor

The MBT3904DW1T1 device is a spin–off of our popular

SOT–23/SOT–323 three–leaded device. It is designed for general

purpose amplifier applications and is housed in the SOT–363

six–leaded surface mount package. By putting two discrete devices in

one package, this device is ideal for low–power surface mount

applications where board space is at a premium.

•hFE, 100–300

•Low VCE(sat), ≤ 0.4 V

•Simplifies Circuit Design

•Reduces Board Space

•Reduces Component Count

•Available in 8 mm, 7–inch/3,000 Unit Tape and Reel

•Device Marking: MBT3904DW1T1 = MA

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage VCEO 40 Vdc

Collector–Base Voltage VCBO 60 Vdc

Emitter–Base V oltage VEBO 6.0 Vdc

Collector Current – Continuous IC200 mAdc

Electrostatic Discharge ESD HBM>16000,

MM>2000 V

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Package Dissipation(1)

TA = 25°CPD150 mW

Thermal Resistance Junction to

Ambient RJA 833 °C/W

Junction and Storage

Temperature Range TJ, Tstg –55 to +150 °C

1. Device mounted on FR4 glass epoxy printed circuit board using the minimum

1. recommended footprint.

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Device Package Shipping

ORDERING INFORMATION

MBT3904DW1T1 SOT–363

SOT–363/SC–88

CASE 419B

STYLE 1

3000 Units/Reel

(1)(2)

(3)

(4) (5) (6)

123

654

MBT3904DW1T1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage(2)

(IC = 1.0 mAdc, IB = 0) V(BR)CEO 40 – Vdc

Collector–Base Breakdown Voltage

(IC = 10 Adc, IE = 0) V(BR)CBO 60 – Vdc

Emitter–Base Breakdown Voltage

(IE = 10 Adc, IC = 0) V(BR)EBO 6.0 – Vdc

Base Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc) IBL – 50 nAdc

Collector Cutoff Current

(VCE = 30 Vdc, VEB = 3.0 Vdc) ICEX – 50 nAdc

ON CHARACTERISTICS (2)

DC Current Gain

(IC = 0.1 mAdc, VCE = 1.0 Vdc)

(IC = 1.0 mAdc, VCE = 1.0 Vdc)

(IC = 10 mAdc, VCE = 1.0 Vdc)

(IC = 50 mAdc, VCE = 1.0 Vdc)

(IC = 100 mAdc, VCE = 1.0 Vdc)

hFE 40

100

–

300

–

Collector–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VCE(sat) –

–0.2

0.3

Vdc

Base–Emitter Saturation Voltage

(IC = 10 mAdc, IB = 1.0 mAdc)

(IC = 50 mAdc, IB = 5.0 mAdc)

VBE(sat) 0.65

–0.85

0.95

Vdc

SMALL–SIGNAL CHARACTERISTICS

Current–Gain – Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) fT300 – MHz

Output Capacitance

(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Cobo – 4.0 pF

Input Capacitance

(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) Cibo – 8.0 pF

2. Pulse Test: Pulse Width ≤ 300 µs; Duty Cycle ≤2.0%.

MBT3904DW1T1

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)

Characteristic Symbol Min Max Unit

Input Impedance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hie 1.0

2.0 10

k Ω

Voltage Feedback Ratio

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hre 0.5

0.1 8.0

X 10–4

Small–Signal Current Gain

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hfe 100

100 400

400

–

Output Admittance

(VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) hoe 1.0

3.0 40

mhos

Noise Figure

(VCE = 5.0 Vdc, IC = 100 Adc, RS = 1.0 k Ω, f = 1.0 kHz) NF –

–5.0

4.0

SWITCHING CHARACTERISTICS

Delay Time (VCC = 3.0 Vdc, VBE = –0.5 Vdc) td– 35

Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) tr– 35 ns

Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) ts– 200

Fall Time (IB1 = IB2 = 1.0 mAdc) tf– 50 ns

Figure 1. Delay and Rise Time

Equivalent Test Circuit Figure 2. Storage and Fall Time

Equivalent Test Circuit

+3 V

275

10 k

1N916 Cs < 4 pF*

+3 V

275

10 k

Cs < 4 pF*

< 1 ns

-0.5 V

+10.9 V

300 ns

DUTY CYCLE = 2%

< 1 ns

-9.1 V′

+10.9 V

DUTY CYCLE = 2%

10 < t1 < 500 s

* Total shunt capacitance of test jig and connectors

MBT3904DW1T1

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TYPICAL TRANSIENT CHARACTERISTICS

Figure 3. Capacitance

REVERSE BIAS VOLTAGE (VOLTS)

2.0

3.0

5.0

7.0

1.0

0.1

Figure 4. Charge Data

IC, COLLECTOR CURRENT (mA)

5000

1.0

VCC = 40 V

IC/IB = 10

Q, CHARGE (pC)

3000

2000

1000

500

300

200

700

100

2.0 3.0 5.0 7.0 10 20 30 50 70 100 200

CAPACITANCE (pF)

1.0 2.0 3.0 5.0 7.0 10 20 30 40

0.2 0.3 0.5 0.7

Cibo

Cobo

TJ = 25°C

TJ = 125°C

Figure 5. Turn–On Time

IC, COLLECTOR CURRENT (mA)

100

200

300

500

Figure 6. Rise Time

IC, COLLECTOR CURRENT (mA)

TIME (ns)

1.0 2.0 3.0 10 20 70

5100

t , RISE TIME (ns)

Figure 7. Storage Time

IC, COLLECTOR CURRENT (mA)

Figure 8. Fall Time

IC, COLLECTOR CURRENT (mA)

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

100

200

300

500

1.0 2.0 3.0 10 20 70

5100

5.0 7.0 30 50 200

t , FALL TIME (ns)

t , STORAGE TIME (ns)

′

VCC = 40 V

IC/IB = 10

VCC = 40 V

IB1 = IB2

IC/IB = 20

IC/IB = 10

tr @ VCC = 3.0 V

td @ VOB = 0 V

40 V

15 V

2.0 V

IC/IB = 10

IC/IB = 20

IC/IB = 10

IC/IB = 20

t′s = ts - 1/8 tf

IB1 = IB2

MBT3904DW1T1

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TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS

NOISE FIGURE VARIATIONS

(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)

Figure 9. Noise Figure

f, FREQUENCY (kHz)

0.1

Figure 10. Noise Figure

RS, SOURCE RESISTANCE (k OHMS)

NF, NOISE FIGURE (dB)

1.0 2.0 4.0 10 20 40

0.2 0.4

0100

0.1 1.0 2.0 4.0 10 20 40

0.2 0.4 100

NF, NOISE FIGURE (dB)

f = 1.0 kHz IC = 1.0 mA

IC = 0.5 mA

IC = 50 A

IC = 100 A

SOURCE RESISTANCE = 200 

IC = 1.0 mA

SOURCE RESISTANCE = 200 

IC = 0.5 mA

SOURCE RESISTANCE = 500 

IC = 100 A

SOURCE RESISTANCE = 1.0 k

IC = 50 A

h PARAMETERS

(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)

Figure 11. Current Gain

IC, COLLECTOR CURRENT (mA)

100

200

300

Figure 12. Output Admittance

IC, COLLECTOR CURRENT (mA)

h , CURRENT GAIN

h , OUTPUT ADMITTANCE ( mhos)

Figure 13. Input Impedance

IC, COLLECTOR CURRENT (mA)

Figure 14. Voltage Feedback Ratio

IC, COLLECTOR CURRENT (mA)

100

2.0

3.0

5.0

7.0

1.0

0.1 0.2 1.0 2.0 5.0

0.5 10

0.3 0.5 3.0

0.7

2.0

5.0

1.0

0.2

0.5

h , VOLTAGE FEEDBACK RATIO (x 10 )

h , INPUT IMPEDANCE (k OHMS)

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0

0.1 0.2 1.0 2.0 5.0 10

0.3 0.5 3.0



-4

MBT3904DW1T1

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TYPICAL STATIC CHARACTERISTICS

Figure 15. DC Current Gain

IC, COLLECTOR CURRENT (mA)

0.3

0.5

0.7

1.0

2.0

0.2

0.1

h , DC CURRENT GAIN (NORMALIZED)

0.5 2.0 3.0 10 50 70

0.2 0.3

0.1 100

1.00.7 200

30205.0 7.0

VCE = 1.0 V

TJ = +125°C

+25°C

-55°C

Figure 16. Collector Saturation Region

IB, BASE CURRENT (mA)

0.4

0.6

0.8

1.0

0.2

0.1

V , COLLECTOR EMITTER VOLTAGE (VOLTS)

0.5 2.0 3.0 100.2 0.3

01.00.7 5.0 7.0

IC = 1.0 mA

TJ = 25°C

0.070.050.030.020.01

10 mA 30 mA 100 mA

Figure 17. “ON” Voltages

IC, COLLECTOR CURRENT (mA)

0.4

0.6

0.8

1.0

1.2

0.2

Figure 18. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

V, VOLTAGE (VOLTS)

1.0 2.0 5.0 10 20 50

0100

-0.5

0.5

1.0

0 60 80 120 140 160 180

20 40 100

COEFFICIENT (mV/ C)

200

-1.0

-1.5

-2.0

200

TJ = 25°C

VBE(sat) @ IC/IB =10

VCE(sat) @ IC/IB =10

VBE @ VCE =1.0 V

+25°C TO +125°C

-55°C TO +25°C

+25°C TO +125°C

-55°C TO +25°C

VC FOR VCE(sat)

VB FOR VBE(sat)

MBT3904DW1T1

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ÉÉÉ

0.5 mm (min)

0.4 mm (min)

0.65 mm 0.65 mm

1.9 mm

The values for the equation are found in the maximum

ratings table on the data sheet. Substituting these values

into the equation for an ambient temperature TA of 25°C,

one can calculate the power dissipation of the device which

in this case is 150 milliwatts.

INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE

MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS

Surface mount board layout is a critical portion of the

total design. The footprint for the semiconductor packages

must be the correct size to insure proper solder connection

interface between the board and the package. With the

correct pad geometry, the packages will self align when

subjected to a solder reflow process.

SOT–363 POWER DISSIPATION

PD = TJ(max) – TA

RθJA

PD = 150°C – 25°C

833°C/W = 150 milliwatts

The power dissipation of the SOT–363 is a function of

the pad size. This can vary from the minimum pad size for

soldering to a pad size given for maximum power dissipa-

tion. Power dissipation for a surface mount device is deter-

mined b y T J(max), the maximum rated junction temperature

of the die, RθJA, the thermal resistance from the device

junction to ambient, and the operating temperature, TA.

Using the values provided on the data sheet for the

SOT–363 package, PD can be calculated as follows:

The 833°C/W for the SOT–363 package assumes the use

of the recommended footprint on a glass epoxy printed

circuit board to achieve a power dissipation of 150 milli-

watts. There are other alternatives to achieving higher

power dissipation from the SOT–363 package. Another

alternative would be to use a ceramic substrate or an

aluminum core board such as Thermal Clad. Using a

board material such as Thermal Clad, an aluminum core

board, the power dissipation can be doubled using the same

footprint.

SOLDERING PRECAUTIONS

The melting temperature of solder is higher than the

rated temperature of the device. When the entire device is

heated to a high temperature, failure to complete soldering

within a short time could result in device failure. There-

fore, the following items should always be observed in

order to minimize the thermal stress to which the devices

are subjected.

•Always preheat the device.

•The delta temperature between the preheat and

soldering should be 100°C or less.*

•When preheating and soldering, the temperature of the

leads and the case must not exceed the maximum

temperature ratings as shown on the data sheet. When

using infrared heating with the reflow soldering

method, the difference shall be a maximum of 10°C.

•The soldering temperature and time shall not exceed

260°C for more than 10 seconds.

•When shifting from preheating to soldering, the

maximum temperature gradient shall be 5°C or less.

•After soldering has been completed, the device should

be allowed to cool naturally for at least three minutes.

Gradual cooling should be used as the use of forced

cooling will increase the temperature gradient and

result in latent failure due to mechanical stress.

•Mechanical stress or shock should not be applied

during cooling.

* Soldering a device without preheating can cause exces-

sive thermal shock and stress which can result in damage

to the device.

SOT–363

MBT3904DW1T1

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PACKAGE DIMENSIONS

SOT–363/SC–88

CASE 419B–01

ISSUE G

STYLE 1:

PIN 1. EMITTER 2

2. BASE 2

3. COLLECTOR 1

4. EMITTER 1

5. BASE 1

6. COLLECTOR 2

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

DIM

MIN MAX MIN MAX

MILLIMETERS

1.80 2.200.071 0.087

INCHES

B1.15 1.350.045 0.053

C0.80 1.100.031 0.043

D0.10 0.300.004 0.012

G0.65 BSC0.026 BSC

H--- 0.10---0.004

J0.10 0.250.004 0.010

K0.10 0.300.004 0.012

N0.20 REF0.008 REF

S2.00 2.200.079 0.087

V0.30 0.400.012 0.016

B0.2 (0.008) MM

123

654

–B–

D6 PL

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without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular

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including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or

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PUBLICATION ORDERING INFORMATION

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4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031

Phone: 81–3–5740–2700

Email: r14525@onsemi.com

ON Semiconductor Website: http://onsemi.com

For additional information, please contact your local

Sales Representative.

MBT3904DW1T1/D

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