NTE249 (NPN) & NTE250 (PNP)
Silicon Complementary Transistors
Darlington Power Amplifier
Description:
The NTE249 (NPN) and NTE250 (PNP) are silicon complementary Darlington transistors in a TO3
type c ase d esigned f or u se a s o utput d evices i n complementary g eneral p urpose a mplifier a pplications.
Features:
DHigh DC Current Gain: hFE = 3500 Typ @ IC = 10A
DMonolithic Construction with Built–In Base–Emitter Shunt Resistors
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, VCB 100V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC16A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, IB500mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (TC = +25°C), PD150W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 0.857W/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–55° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +200°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RthJC 1.17°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage V(BR)CEO IC = 100mA, IB = 0, Note 1 100 – – V
Collector–Emitter Leakage Current ICEO VCE = 50V, IE = 0 – – 3.0 mA
ICER VCB = 100V, RBE = 1kΩ– – 1.0 mA
VCB = 100V, RBE = 1kΩ, TA = +150°C – – 5.0 mA
Emitter Cutoff Current IEBO VBE = 5V, IC = 0 – – 5.0 mA
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics (Note 1)
DC Current Gain hFE VCE = 3V, IC = 10A 1000 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 10A, IB = 40mA – – 2.5 V
IC = 16A, IB = 80mA – – 4.0 V
Base–Emitter Voltage VBE VCE = 3V, IC = 10A – – 3.0 V
Note 1. Pulse Test: Pulse Width = 300µs, Duty Cycle = 2%
NTE249
NTE250
B
C
E
B
C
E
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02).312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/CaseBase
.215 (5.45)
.525 (13.35) R Max
.188 (4.8) R Max
