M40Z300 M40Z300W 5 V or 3 V NVRAM supervisor for up to 8 LPSRAMs Not recommended for new design Features Converts low power SRAM into NVRAMs Precision power monitoring and power switching circuitry Automatic WRITE-protection when VCC is outof-tolerance Two-input decoder allows control for up to 8 SRAMs (with 2 devices active in parallel) Choice of supply voltages and power-fail deselect voltages: - M40Z300: VCC = 4.5 V to 5.5 V THS = VSS: 4.5 V VPFD 4.75 V THS = VOUT: 4.2 V VPFD 4.5 V - M40Z300W: VCC = 3.0 V to 3.6 V THS = VSS: 2.8 V VPFD 3.0 V VCC = 2.7 V to 3.3 V THS = VOUT: 2.5 V VPFD 2.7 V ) (s u d o 1 r P e SO16 (MQ) t e l o s b O SNAPHAT (SH) crystal/battery t c u Reset output (RST) for power on reset Battery low pin (BL) Less than 12 ns chip enable access propagation delay (for 5.0 V device) Packaging includes a 28-lead SOIC and SNAPHAT(R) top (to be ordered separately), or A 16-lead SOIC d o r P e t e l o s b O SOIC package provides direct connection for a SNAPHAT top which contains the battery RoHS compliant - Lead-free second level interconnect October 2010 ) s ( ct 16 Doc ID 5679 Rev 5 This is information on a product still in production but not recommended for new designs. 28 1 SOH28 (MH) 1/25 www.st.com 1 Contents M40Z300, M40Z300W Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2 Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.1 Two to four decode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.2 Data retention lifetime calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2.3 Power-on reset output . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.4 Battery low pin . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2.5 VCC noise and negative going transients . . . . . . . . . . . . . . . . . . . . . . . . . 12 ) s ( ct u d o 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 4 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 6 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 2/25 Doc ID 5679 Rev 5 M40Z300, M40Z300W List of tables List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Truth table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 DC and AC measurement conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Capacitance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Power down/up mode AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 SOH28 - 28-lead plastic small outline, battery SNAPHAT, package mechanical data . . . 19 SH - 4-pin SNAPHAT housing for 48 mAh battery, package mechanical data . . . . . . . . . 20 SH - 4-pin SNAPHAT housing for 120 mAh battery, package mechanical data . . . . . . . . 21 SO16 - 16-lead plastic small outline, 150 mils body width, package mechanical data . . . 22 Ordering information example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 SNAPHAT(R) battery table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O Doc ID 5679 Rev 5 3/25 List of figures M40Z300, M40Z300W List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 28-pin SOIC connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 M40Z300 16-pin SOIC connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 M40Z300W 16-pin SOIC connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Hardware hookup . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Address-decode time . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Supply voltage protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 AC testing load circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Power-down timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Power-up timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 SOH28 - 28-lead plastic small outline, 4-socket battery SNAPHAT, package outline . . . . 19 SH - 4-pin SNAPHAT housing for 48 mAh battery, package outline . . . . . . . . . . . . . . . . . 20 SH - 4-pin SNAPHAT housing for 120mAh battery, package outline. . . . . . . . . . . . . . . . . 21 SO16 - 16-lead plastic small outline, 150 mils body width, package outline . . . . . . . . . . . 22 ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 4/25 Doc ID 5679 Rev 5 M40Z300, M40Z300W 1 Description Description The M40Z300/W NVRAM supervisor is a self-contained device which converts a standard low-power SRAM into a non-volatile memory. A precision voltage reference and comparator monitors the VCC input for an out-of-tolerance condition. When an invalid VCC condition occurs, the conditioned chip enable outputs (E1CON to E4CON) are forced inactive to write-protect the stored data in the SRAM. During a power failure, the SRAM is switched from the VCC pin to the lithium cell within the SNAPHAT(R) to provide the energy required for data retention. On a subsequent power-up, the SRAM remains write protected until a valid power condition returns. ) s ( ct The 28-pin, 330 mil SOIC provides sockets with gold plated contacts for direct connection to a separate SNAPHAT housing containing the battery. The SNAPHAT housing has gold plated pins which mate with the sockets, ensuring reliable connection. The housing is keyed to prevent improper insertion. This unique design allows the SNAPHAT battery package to be mounted on top of the SOIC package after the completion of the surface mount process which greatly reduces the board manufacturing process complexity of either directly soldering or inserting a battery into a soldered holder. Providing non-volatility becomes a "SNAP." The 16-pin SOIC provides battery pins for an external user-supplied battery. u d o r P e t e l o Insertion of the SNAPHAT housing after reflow prevents potential battery damage due to the high temperatures required for device surface-mounting. The SNAPHAT housing is also keyed to prevent reverse insertion. s b O The 28-pin SOIC and battery packages are shipped separately in plastic anti-static tubes or in tape & reel form. For the 28-lead SOIC, the battery/crystal package (e.g., SNAPHAT) part number is "M4ZXX-BR00SH". Caution: ) (s Do not place the SNAPHAT battery top in conductive foam, as this will drain the lithium button-cell battery. t c u d o r P e t e l o s b O Doc ID 5679 Rev 5 5/25 Description M40Z300, M40Z300W Figure 1. Logic diagram VCC B +(1) THS VOUT BL E B E1CON M40Z300 M40Z300W A E2CON ) s ( ct E3CON E4CON RST VSS 1. For 16-pin SOIC package only. Table 1. Signal names )- THS E1CON - E4CON s ( t c u d o A, B BL e t e ol s b O r P e t e l o B -(1) s b O Threshold select input E RST u d o Pr Chip enable input Conditioned chip enable output Decoder inputs Reset output (open drain) Battery low output (open drain) VOUT Supply voltage output VCC Supply voltage VSS Ground B+ Positive battery pin B- Negative battery pin(1) NC Not connected internally 1. For M40Z300W, B- must be connected to the negative battery terminal only (not to pin 8, VSS). 6/25 Doc ID 5679 Rev 5 AI02242 M40Z300, M40Z300W Figure 2. Description 28-pin SOIC connections VOUT NC NC RST NC A NC B NC BL NC NC THS VSS Figure 3. M40Z300 16-pin SOIC connections VOUT NC RST A B BL THS VSS ) (s t c u Figure 4. b O so 1 2 3 4 5 6 7 8 VCC E NC NC NC E1CON E2CON NC E3CON NC NC NC E4CON NC ) s ( ct u d o r P e AI02243 t e l o 16 15 14 13 M40Z300 12 11 10 9 s b O VCC B+ E E1CON E2CON E3CON E4CON B- AI03624 d o r P e let 1 28 27 2 26 3 25 4 24 5 23 6 7 M40Z300 22 8 M40Z300W 21 20 9 19 10 18 11 17 12 16 13 15 14 M40Z300W 16-pin SOIC connections VOUT NC RST A B BL THS VSS 1 16 15 2 14 3 4 13 M40Z300W 12 5 6 11 7 10 8 9 VCC B - (1) E E1CON E2CON E3CON E4CON B+ AI06350 1. For M40Z300W, B- must be connected to the negative battery terminal only (not to pin 8, VSS). Doc ID 5679 Rev 5 7/25 Description Figure 5. M40Z300, M40Z300W Hardware hookup 3.0V, 3.3V or 5V VCC VOUT 0.1F M40Z300 M40Z300W VCC VCC VCC VCC (1) E2 E2(1) E2(1) E2(1) CMOS SRAM CMOS SRAM 0.1F 0.1F E A B E Threshold 0.1F E 0.1F ) s ( ct E E E1CON E2CON u d o E3CON r P e E4CON THS RST VSS BL t e l o To Microprocessor To Battery Monitor Circuit )- s b O s ( t c 1. If the second chip enable pin (E2) is unused, it should be tied to VOUT. u d o r P e t e l o s b O 8/25 CMOS SRAM CMOS SRAM Doc ID 5679 Rev 5 AI02395 M40Z300, M40Z300W 2 Operation Operation The M40Z300/W, as shown in Figure 5 on page 8, can control up to four (eight, if placed in parallel) standard low-power SRAMs. These SRAMs must be configured to have the chip enable input disable all other input signals. Most slow, low-power SRAMs are configured like this, however many fast SRAMs are not. During normal operating conditions, the conditioned chip enable (E1CON to E4CON) output pins follow the chip enable (E) input pin with timing shown in Figure 6 on page 10 and Table 7 on page 17. An internal switch connects VCC to VOUT. This switch has a voltage drop of less than 0.3V (IOUT1). When VCC degrades during a power failure, E1CON to E4CON are forced inactive independent of E. In this situation, the SRAM is unconditionally write protected as VCC falls below an out-of-tolerance threshold (VPFD). For the M40Z300 the power fail detection value associated with VPFD is selected by the Threshold Select (THS) pin and is shown in Table 6 on page 15. For the M40Z300W, the THS pin selects both the supply voltage and VPFD (also shown in Table 6 on page 15). ) s ( ct Note: In either case, THS pin must be connected to either VSS or VOUT. u d o r P e If chip enable access is in progress during a power fail detection, that memory cycle continues to completion before the memory is write protected. If the memory cycle is not terminated within time tWPT, E1CON to E4CON are unconditionally driven high, write protecting the SRAM. A power failure during a WRITE cycle may corrupt data at the currently addressed location, but does not jeopardize the rest of the SRAM's contents. At voltages below VPFD (min), the user can be assured the memory will be write protected within the Write Protect Time (tWPT) provided the VCC fall time exceeds tF (see Figure 6 on page 10). t e l o ) (s s b O As VCC continues to degrade, the internal switch disconnects VCC and connects the internal battery to VOUT. This occurs at the switchover voltage (VSO). Below the VSO, the battery provides a voltage VOHB to the SRAM and can supply current IOUT2 (see Table 6 on page 15). t c u d o r When VCC rises above VSO, VOUT is switched back to the supply voltage. Outputs E1CON to E4CON are held inactive for tCER (120ms maximum) after the power supply has reached VPFD, independent of the E input, to allow for processor stabilization (see Figure 10 on page 16). P e t e l o s b O Doc ID 5679 Rev 5 9/25 Operation 2.1 M40Z300, M40Z300W Two to four decode The M40Z300/W includes a 2 input (A, B) decoder which allows the control of up to 4 independent SRAMs. The truth table for these inputs is shown in Table 2. Table 2. Truth table Inputs Outputs E B A E1CON E2CON E3CON E4CON H X X H H H H L L L L H H H L L H H L H H L H L H H L L H H H H c u d Figure 6. Address-decode time A, B e t e ol tAS E s b O tEDL ) (s E1CON - E4CON Note: ct u d o H ) s ( t H L o r P tEDH AI02551 During system design, compliance with the SRAM timing parameters must comprehend the propagation delay between E1CON - E4CON. 2.2 r P Data retention lifetime calculation e t e l o s b O Most low power SRAMs on the market today can be used with the M40Z300/W NVRAM SUPERVISOR. There are, however some criteria which should be used in making the final choice of which SRAM to use. The SRAM must be designed in a way where the chip enable input disables all other inputs to the SRAM. This allows inputs to the M40Z300/W and SRAMs to be "Don't Care" once VCC falls below VPFD(min). The SRAM should also guarantee data retention down to VCC = 2.0 V. The chip enable access time must be sufficient to meet the system needs with the chip enable propagation delays included. If the SRAM includes a second chip enable pin (E2), this pin should be tied to VOUT. If data retention lifetime is a critical parameter for the system, it is important to review the data retention current specifications for the particular SRAMs being evaluated. Most SRAMs specify a data retention current at 3.0 V. Manufacturers generally specify a typical condition for room temperature along with a worst case condition (generally at elevated temperatures). The system level requirements will determine the choice of which value to use. 10/25 Doc ID 5679 Rev 5 M40Z300, M40Z300W Operation The data retention current value of the SRAMs can then be added to the IBAT value of the M40Z300/W to determine the total current requirements for data retention. The available battery capacity for the SNAPHAT(R) of your choice can then be divided by this current to determine the amount of data retention available (see Table 13 on page 23). Caution: Take care to avoid inadvertent discharge through VOUT and E1CON - E4CON after battery has been attached. For a further more detailed review of lifetime calculations, please see application note AN1012. 2.3 Power-on reset output ) s ( ct All microprocessors have a reset input which forces them to a known state when starting. The M40Z300/W has a reset output (RST) pin which is guaranteed to be low within tWPT of VPFD (see Table 7). This signal is an open drain configuration. An appropriate pull-up resistor should be chosen to control the rise time. This signal will be valid for all voltage conditions, even when VCC equals VSS. u d o r P e Once VCC exceeds the power failure detect voltage VPFD, an internal timer keeps RST low for tREC to allow the power supply to stabilize. 2.4 t e l o Battery low pin s b O The M40Z300/W automatically performs battery voltage monitoring upon power-up, and at factory-programmed time intervals of at least 24 hours. The battery low (BL) pin will be asserted if the battery voltage is found to be less than approximately 2.5 V. The BL pin will remain asserted until completion of battery replacement and subsequent battery low monitoring tests, either during the next power-up sequence or the next scheduled 24-hour interval. ) (s t c u d o r If a battery low is generated during a power-up sequence, this indicates that the battery is below 2.5 V and may not be able to maintain data integrity in the SRAM. Data should be considered suspect, and verified as correct. A fresh battery should be installed. P e s b O t e l o If a battery low indication is generated during the 24-hour interval check, this indicates that the battery is near end of life. However, data is not compromised due to the fact that a nominal VCC is supplied. In order to insure data integrity during subsequent periods of battery backup mode, the battery should be replaced. The SNAPHAT(R) top should be replaced with valid VCC applied to the device. The M40Z300/W only monitors the battery when a nominal VCC is applied to the device. Thus appli-cations which require extensive durations in the battery backup mode should be powered-up periodically (at least once every few months) in order for this technique to be beneficial. Additionally, if a battery low is indicated, data integrity should be verified upon power-up via a checksum or other technique. The BL pin is an open drain output and an appropriate pull-up resistor to VCC should be chosen to control the rise time. Doc ID 5679 Rev 5 11/25 Operation 2.5 M40Z300, M40Z300W VCC noise and negative going transients ICC transients, including those produced by output switching, can produce voltage fluctuations, resulting in spikes on the VCC bus. These transients can be reduced if capacitors are used to store energy which stabilizes the VCC bus. The energy stored in the bypass capacitors will be released as low going spikes are generated or energy will be absorbed when overshoots occur. A ceramic bypass capacitor value of 0.1 F (as shown in Figure 7) is recommended in order to provide the needed filtering. In addition to transients that are caused by normal SRAM operation, power cycling can generate negative voltage spikes on VCC that drive it to values below VSS by as much as one volt. These negative spikes can cause data corruption in the SRAM while in battery backup mode. To protect from these voltage spikes, STMicroelectronics recommends connecting a Schottky diode from VCC to VSS (cathode connected to VCC, anode to VSS). Schottky diode 1N5817 is recommended for through hole and MBRS120T3 is recommended for surface mount. Figure 7. ) s ( ct u d o Supply voltage protection r P e VCC t e l o VCC bs 0.1F O ) s ( t c u d o r P e t e l o s b O 12/25 Doc ID 5679 Rev 5 DEVICE VSS AI00622 M40Z300, M40Z300W 3 Maximum ratings Maximum ratings Stressing the device above the rating listed in the absolute maximum ratings table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 3. Absolute maximum ratings Symbol Parameter Grade 1 Ambient operating temperature TA TSTG TSLD(1) Storage temperature Input or output voltage VCC Supply voltage IO Output current PD Power dissipation Unit 0 to 70 C ) s ( ct Grade 6 -40 to 85 C SNAPHAT(R) -40 to 85 C SOIC -55 to 125 C du ro Lead solder temperature for 10 seconds VIO Value 260 C -0.3 to VCC + 0.3 V M40Z300 -0.3 to 7.0 V M40Z300W -0.3 to 4.6 V 20 mA 1 W P e t e l o s b O 1. For SO package, Lead-free (Pb-free) lead finish: Reflow at peak temperature of 260C (total thermal budget not to exceed 245C for greater than 30 seconds). ) (s Caution: Negative undershoots below -0.3 V are not allowed on any pin while in the battery backup mode. Caution: Do NOT wave solder SOIC to avoid damaging SNAPHAT sockets. t c u d o r P e t e l o s b O Doc ID 5679 Rev 5 13/25 DC and AC parameters 4 M40Z300, M40Z300W DC and AC parameters This section summarizes the operating and measurement conditions, as well as the DC and AC characteristics of the device. The parameters in the following DC and AC characteristic tables are derived from tests performed under the measurement conditions listed in Table 4: DC and AC measurement conditions. Designers should check that the operating conditions in their projects match the measurement conditions when using the quoted parameters. Table 4. DC and AC measurement conditions Parameter VCC supply voltage Ambient operating temperature M40Z300W 4.5 to 5.5 V 2.7 to 3.6 V Grade 1 0 to 70 C Grade 6 -40 to 85 C 100 pF Input rise and fall times 5 ns ro P e Input and output timing ref. voltages t e l o ) s ( ct du Load capacitance (CL) Input pulse voltages Note: M40Z300 0 to 70 C -40 to 85 C 50 pF 5 ns 0 to 3 V 0 to 3 V 1.5 V 1.5 V Output High Z is defined as the point where data is no longer driven. Figure 8. AC testing load circuit )- DEVICE UNDER TEST s b O 333 s ( t c u d o CL = 100pF or 50pF r P e t e l o s b O Note: CL includes JIG capacitance AI02393 50 pF for M40Z300W. Table 5. Capacitance Parameter(1)(2) Symbol CIN COUT (3) Min Max Unit Input capacitance - 8 pF Input/output capacitance - 10 pF 1. Sampled only, not 100% tested. 2. At 25 C, f = 1 MHz. 3. Outputs deselected. 14/25 1.73V Doc ID 5679 Rev 5 M40Z300, M40Z300W Table 6. Sym DC and AC parameters DC characteristics M40Z300 Test condition(1) Parameter M40Z300W Unit Min Typ Max ILI(2) Input leakage current ICC Supply current VIL Input low voltage -0.3 0.8 VIH Input high voltage 2.2 VCC + 0.3 0 V VIN VCC Min Typ Max 1 Outputs open 3 1 A 4 mA -0.3 0.8 V 2.0 VCC + 0.3 V 6 2 Output low voltage IOL = 4.0 mA 0.4 0.4 V VOL Output low voltage (open drain)(3) IOL = 10 mA 0.4 0.4 V VOH Output high voltage VOHB VOH battery backup(4) IOUT1 VOUT current (active) IOUT2 VOUT current (battery backup) ICCDR Data retention mode current(5) THS Threshold select voltage IOH = -2.0 mA 2.4 IOUT2 = -1.0 A 2.0 VPFD 250 VOUT > VCC -0.2 150 VOUT > VBAT -0.3 V 2.9 ) s ( ct du o r P 3.6 c u d o r P 150 mA 100 mA 100 e t e ol VOUT VSS V A 100 nA VOUT V 4.5 bs 4.6 4.75 2.8 2.9 3.0 V 4.2 4.35 4.5 2.5 2.6 2.7 V VSS Battery backup switchover voltage VBAT Battery voltage 100 2.0 100 Power-fail deselect voltage (THS = VOUT) VSO 3.6 VOUT > VCC -0.3 Power-fail deselect voltage (THS = VSS) ) s ( t 2.4 2.9 -O 3.0 2.0 2.9 2.5 3.6 2.0 2.9 V 3.6 V 1. Valid for ambient operating temperature: TA = 0 to 70 C or -40 to 85 C; VCC = 2.7 to 3.6 V or 4.5 to 5.5 V (except where noted). e t e ol 2. Outputs deselected. 3. For RST & BL pins (open drain). s b O 4. Chip enable outputs (E1CON - E4CON) can only sustain CMOS leakage currents in the battery backup mode. Higher leakage currents will reduce battery life. 5. Measured with VOUT and E1CON - E4CON open. Doc ID 5679 Rev 5 15/25 DC and AC parameters Figure 9. M40Z300, M40Z300W Power-down timing VCC VPFD (max) VPFD VPFD (min) VSO tF ) s ( ct tFB E u d o tWPT VOHB r P e E1CON-E4CON t e l o RST Figure 10. Power-up timing ) (s VCC VPFD d o r VPFD (min) P e t e l o s b O s b O t c u VPFD (max) VSO AI02398B tRB tR tCER E tEDH E1CON-E4CON tEDL VOHB tREC RST 16/25 AI02399B Doc ID 5679 Rev 5 M40Z300, M40Z300W DC and AC parameters Table 7. Power down/up mode AC characteristics Parameter(1) Symbol tF(2) VPFD (max) to VPFD (min) VCC fall time tFB(3) VPFD (min) to VSS VCC fall time tR Chip enable propagation delay low tEDH Chip enable propagation delay high tCER tREC(4) tWPT tRB M40Z300 10 s M40Z300W 150 s 10 s M40Z300 12 ns M40Z300W 20 ns M40Z300 10 ns M40Z300W 20 ns 0 Chip enable recovery 40 VPFD (max) to RST high 40 M40Z300 M40Z300W e t e ol VSS to VPFD (min) VCC rise time Unit s A, B set up to E Write protect time Max 300 VPFD(min) to VPFD (max) VCC rise time tEDL tAS Min 40 150 s 250 s ns 120 c u d o r P 40 120 ) s ( t 1 ms ms s 1. Valid for ambient operating temperature: TA = 0 to 70 C or -40 to 8 5C; VCC = 2.7 to 3.6 V or 4.5 to 5.5 V(except where noted). s b O 2. VPFD (max) to VPFD (min) fall time of less than tF may result in deselection/write protection not occurring until 200 s after VCC passes VPFD (min). 3. VPFD (min) to VSS fall time of less than tFB may cause corruption of RAM data. ) (s 4. tREC (min) = 20ms for industrial temperature Grade 6 device. t c u d o r P e t e l o s b O Doc ID 5679 Rev 5 17/25 Package mechanical data 5 M40Z300, M40Z300W Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 18/25 Doc ID 5679 Rev 5 M40Z300, M40Z300W Package mechanical data Figure 11. SOH28 - 28-lead plastic small outline, 4-socket battery SNAPHAT, package outline A2 A C B eB e CP D N E ) s ( ct H A1 L 1 Note: du Drawing is not to scale. Table 8. o r P SOH28 - 28-lead plastic small outline, battery SNAPHAT, package mechanical data e t e ol mm Symbol Typ bs Min A ) s ( ct A1 0.05 Max -O Typ inches Min 3.05 Max 0.120 0.36 0.002 0.014 2.34 2.69 0.092 0.106 0.36 0.51 0.014 0.020 0.15 0.32 0.006 0.012 17.71 18.49 0.697 0.728 8.23 8.89 0.324 0.350 - - - - eB 3.20 3.61 0.126 0.142 H 11.51 12.70 0.453 0.500 L 0.41 1.27 0.016 0.050 a 0 8 0 8 N 28 A2 B u d o C D E e t e ol Pr e s b O SOH-A CP 1.27 0.050 28 0.10 Doc ID 5679 Rev 5 0.004 19/25 Package mechanical data M40Z300, M40Z300W Figure 12. SH - 4-pin SNAPHAT housing for 48 mAh battery, package outline A1 A2 A eA A3 B L eB D ) s ( ct E Note: u d o r P e Drawing is not to scale. Table 9. Symbol Typ A Min ) (s A1 6.73 A2 t c u A3 od B Max Typ Min Max 7.24 0.265 0.285 6.99 0.255 0.275 9.78 0.385 0.38 0.015 0.56 0.018 0.022 21.21 21.84 0.835 0.860 14.22 14.99 0.560 0.590 15.55 15.95 0.612 0.628 eB 3.20 3.61 0.126 0.142 L 2.03 2.29 0.080 0.090 E e t e l eA 20/25 6.48 s b O inches 0.46 D b O t e l o SH - 4-pin SNAPHAT housing for 48 mAh battery, package mechanical data mm so SHZP-A Pr Doc ID 5679 Rev 5 M40Z300, M40Z300W Package mechanical data Figure 13. SH - 4-pin SNAPHAT housing for 120mAh battery, package outline A1 A2 A eA A3 B L eB D ) s ( ct E Note: u d o r P e Drawing is not to scale. Table 10. Symbol Typ Min A )- A1 8.00 s ( t c A2 7.24 A3 u d o B E e t e l eA b O so t e l o SH - 4-pin SNAPHAT housing for 120 mAh battery, package mechanical data mm D SHZP-A Pr s b O Max Typ inches Min 10.54 Max 0.415 8.51 0.315 .0335 8.00 0.285 0.315 0.38 0.015 0.46 0.56 0.018 0.022 21.21 21.84 0.835 0.860 17.27 18.03 0.680 0.710 15.55 15.95 0.612 0.628 eB 3.20 3.61 0.126 0.142 L 2.03 2.29 0.080 0.090 Doc ID 5679 Rev 5 21/25 Package mechanical data M40Z300, M40Z300W Figure 14. SO16 - 16-lead plastic small outline, 150 mils body width, package outline A2 A C B CP e D N E ) s ( ct H 1 A1 Note: r P e t e l o mm Typ. Typ. Min. Max. 1.60 0.35 0.46 0.014 0.018 0.19 0.25 0.007 0.010 9.80 10.00 0.386 0.394 3.80 4.00 0.150 0.158 - - - - H 5.80 6.20 0.228 0.244 L 0.40 1.27 0.016 0.050 a 0 8 0 8 N 16 0.10 s ( t c A2 B u d o C Pr D E e CP 22/25 Max. inches O ) A1 O bs Min. A o s b SO-b SO16 - 16-lead plastic small outline, 150 mils body width, package mechanical data Symbol e t e l L u d o Drawing is not to scale. Table 11. 1.27 1.75 0.069 0.25 0.004 0.010 0.063 0.050 16 0.10 Doc ID 5679 Rev 5 0.004 M40Z300, M40Z300W 6 Part numbering Part numbering Table 12. Ordering information example Example: M40Z 300W MH 1 E Device type M40Z Supply and write protect voltage 300(1) = VCC = 4.5 to 5.5 V ) s ( ct THS = VSS = 4.5 V VPFD 4.75 V THS = VOUT = 4.2 V VPFD 4.5 V u d o 300W(1) = VCC = 3.0 to 3.6 V THS = VSS = 2.8 V VPFD 3.0 V r P e VCC = 2.7 V to 3.3 V THS = VOUT = 2.5 V VPFD 2.7 V t e l o Package MH (2) = SOH28 MQ = SO16 Temperature range ) (s s b O t c u 1 = 0 to 70 C d o r 6 = -40 to 85 C P e Shipping method for SOIC t e l o E = Lead-free package (ECOPACK(R)), tubes F = Lead-free package (ECOPACK(R)), tape & reel bs O Caution: 1. Not recommended for new design. Contact ST sales office for availability. 2. The SOIC package (SOH28) requires the battery package (SNAPHAT(R)) which is ordered separately under the part number "M4Zxx-BR00SH" in plastic tubes or "M4Zxx-BR00SHTR" in tape & reel form. Do not place the SNAPHAT battery package "M4Zxx-BR00SH" in conductive foam as it will drain the lithium button-cell battery. For other options, or for more information on any aspect of this device, please contact the ST sales office nearest you Table 13. SNAPHAT(R) battery table Part number Description Package M4Z28-BR00SH1 Lithium battery (48 mAh) SNAPHAT SH M4Z32-BR00SH1 Lithium battery (120 mAh) SNAPHAT SH Doc ID 5679 Rev 5 23/25 Revision history 7 M40Z300, M40Z300W Revision history Table 14. Document revision history Date Revision Mar-1999 1.0 First issue 08-Mar-2000 1.1 Document layout changed; SO16 package added; battery capacity changed (Table 13) 22-Sep-2000 1.2 SO16 package measures change 23-Feb-2001 1.3 Added information for industrial temperature (Table 3, 7, 12) 30-May-2001 1.4 Change "Controller" references to "SUPERVISOR" 10-Jul-2001 2.0 Reformatted; added temp/voltage info. to tables (Table 6, 7); Figures changed (Figure 1, 3, 5, 8, 6) 01-Aug-2001 2.1 E2 connections added to hookup (Figure 5) 15-Jan-2002 2.2 16-pin SOIC connections split, graphic added (Figure 4); addition to hardware hookup (Figure 5) 13-May-2002 2.3 Modify reflow time and temperature footnote (Table 3) 31-Oct-2003 2.4 Update DC characteristics (Table 6) 04-Nov-2003 2.5 Correct DC characteristics (Table 6) 23-Feb-2005 3.0 Reformatted; IR reflow, SO package updates (Table 3) 4.0 Reformatted; added lead-free second level interconnect to cover page and Section 5: Package mechanical data; updated Figure 10 and Table 3, 12, 13. 05-Nov-2007 Changes 5 t e l o ) (s s b O Devices not recommended for new design, updated document status; updated Table 12, ECOPACK(R) text in Section 5: Package mechanical data; reformatted document. d o r P e t e l o s b O 24/25 u d o r P e t c u 19-Oct-2010 ) s ( ct Doc ID 5679 Rev 5 M40Z300, M40Z300W ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. 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