1165939
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Features:
•70W at 25°C case temperature.
•8A continuous collector current.
•Minimum hFE of 1000 at 4V, 4A.
TO-220 Package (Top View)
Pin 2 is in electrical contact with the mounting base.
Absolute maximum ratings at 25°C case temperature (unless otherwise noted)
Rating Symbol Value Unit
Collector-base voltage (IE= 0) TIP137 VCBO
-100
V
Collector-emitter voltage (IB= 0) TIP137 VCEO
Emitter-base voltage VEBO -5
Continuous collector current IC-8
APeak collector current (note 1) ICM -12
Continuous base current IB-0.3
Continuous device dissipation at (or below) 25°C case temperature (note 2) Ptot
70
W
Continuous device dissipation at (or below) 25°C free air temperature (note 3) 2
Unclamped inductive load energy (note 4) 1/2LIC275 mJ
Operating junction temperature range Tj
-65 to +150
°CStorage temperature range Tstg
Lead temperature 3.2mm from case for 10 seconds TL260
NOTES: 1. This value applies for tp≤0.3ms, duty cycle ≤10%.
2. Derate linearly to 150°C case temperature at the rate of 0.56W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20mH, IB (on) = -5mA,
RBE = 100Ω, VBE (off) = 0, RS= 0.1Ω, VCC = -20V.
1165939
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Electrical characteristics at 25°C case temperature
Parameter Test Conditions Minimum Symbol Maximum Unit
Collector-emitter breakdown voltage IC= -30mA IB= 0 (Note 5) TIP137 -100 V (BR)CEO - V
Collector-emitter cut-off current VCE = -50V IB= 0 TIP137 -ICEO -0.5
mA
Collector cut-off current VCB = -100V IE= 0 TIP137
VCB = -100V IE= 0 TC= 100°C TIP137 -ICBO
-0.2
-1
Emitter cut-off current VEB = -5V IC= 0 -IEBO -5
Forward current transfer ratio VCE = -4V IC= -1A
VCE = -4V IC= -4A (Notes 5 and 6)
500
1000 hFE 15000 -
Collector-emitter saturation voltage IB= -16mA IC= -4A
IB= -30mA IC= -6A (Notes 5 and 6) -VCE (sat)
-2
-3 V
Base-emitter voltage VCE = -4V IC= -4A (Notes 5 and 6) -VBE -2.5
Output capacitance VCB = -10V IE= 0 -Cobo 200 pF
Parallel diode forward voltage IE= -8A IB= 0 (Notes 5 and 6) -VEC -3.5 V
NOTES: 5. These parameters must be measured using pulse techniques, tp= 300µs, duty cycle ≤2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
Thermal Characteristics
Parameter Symbol Minimum Typical Maximum Unit
Junction to case thermal resistance RθJC - - 1.78
°C/W
Junction to free air thermal resistance RθJA - - 62.5
Typical DC Current Gain vs Collector Current
hFE - Typical DC Current Gain
IC- Collector Current - A
Collector-Emitter Saturation Voltage vs Collector
Current
VCE(sat) - Collector-Emitter Saturation
Voltage - V
IC- Collector Current -A
Typical Characteristics
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Base-Emitter Saturation Voltage vs Collector
Current
VBE(sat) - Base -Emitter Saturation Voltage - V
IC- Collector Current - A
Maximum Power Dissipation vs Case
Temperature
Ptot - Maximum Power Dissipation - W
TC- Case Temperature - °C
Maximum Forward-Bias Safe Operating Area
IC- Collector Current - A
VCE - Collector-Emitter Voltage - V
Part Number Table
Description Part Number
Darlington Transistor, TO-220 TIP137
Maximum Safe Operating Regions
Thermal Information
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